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    Text: PD - 94382B IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    PDF 94382B IRGB10B60KD IRGS10B60KD IRGSL10B60KD O-220AB O-262 O-220AB