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    Untitled

    Abstract: No abstract text available
    Text: WTK9431 DRAIN SOURCE VOLTAGE 6 5 D 4 G -3.5 AMPERES D 7 3 S D S 2 Features: DRAIN CURRENT 8 S 1 P b Lead Pb -Free D Surface Mount P-Channel Enhancement Mode MOSFET -20 VOLTAGE * Super high dense * Cell design for low RDS(ON) * RDS(ON)<130mΩ@V GS = -4.5V * RDS(ON)<180mΩ@V GS = -2.5V


    Original     		PDF WTK9431 WTK9431 07-Nov-08

    Untitled

    Abstract: No abstract text available
    Text: WTK9431 Surface Mount P-Channel Enhancement Mode MOSFET 7 -3.5 AMPERES 6 D 3 DRAIN CURRENT D S 8 S 2 D S 1 P b Lead Pb -Free DRAIN SOURCE VOLTAGE 5 D 4 G Features: -20 VOLTAGE * Super high dense * Cell design for low RDS(ON) * RDS(ON)<130mΩ@V GS = -4.5V * RDS(ON)<180mΩ@V GS = -2.5V


    Original     		PDF WTK9431 WTK9431 17-May-07 WTK9435M 13-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: SSG9431 P-Ch Enhancement Mode Power MOSFET -3.5 A, -20 V, RDS ON 130 mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG9431 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF SSG9431 SSG9431 07936g 9431SC width300us, 01-June-2007