S708
Abstract: TOSHIBA TPS708 TPS708 TLN108 TLN210 Toshiba S708
Text: TPS708 F TOSHIBA Photo Diode Silicon PN TPS708(F) Lead Free Product Optical Switch • TO−18 metal package • High sensitivity : ISC = 1.5µA(typ.) Unit in mm • Small dark current : ID = 10pA(typ.) • TLN108(F)(λP = 940nm) and TLN210(F)(λP = 880nm) are available
|
Original
|
TPS708
TLN108
940nm)
TLN210
880nm)
S708
TOSHIBA TPS708
Toshiba S708
|
PDF
|
Untitled
Abstract: No abstract text available
Text: High Power LED lamp BL-HP20AIRAC n Features: Ø Ø Ø Ø high power IR LED Forward current:350mA 940nm, 880nm,850nm wavelength Radiant intensity at 350mA : 135mw/sr n Application Ø Ø Ø Ø Ø Optical coupler Smoke dector Alarm and safety equipment Anolog and digital Hi-Fi audio and video signal transmission
|
Original
|
BL-HP20AIRAC
350mA
940nm,
880nm
850nm
350mA)
135mw/sr
|
PDF
|
e26a
Abstract: E148-5V E149-12V E149-5V E150-5V E151-12V E151-5V E25A E304-12V E304-5V
Text: A B 2 7 MI N 1.5 5.9 8.6 1 CATHODE 2.54 5 .5 1 MAX T-1 and T-1¾, Infrared LEDs: 880nm, 940nm Size Lens Radiant Power at 20mA Minimum Typical INFRARED 1 E21 T-1 Clear 2.0mW/sr INFRARED 2 E22 T-1 Trans.Blue INFRARED 3 E23 T-1¾ Clear INFRARED 4 E24 T-1¾ Trans.Blue
|
Original
|
880nm,
940nm
880nm
100nA
e26a
E148-5V
E149-12V
E149-5V
E150-5V
E151-12V
E151-5V
E25A
E304-12V
E304-5V
|
PDF
|
E150-5V
Abstract: infrared 660nm* 20mw E151 E148-5V E149-12V E149-5V E151-12V E151-5V E304-12V E304-5V
Text: A B 2 7 MI N 1.5 5.9 8.6 1 CATHODE 2.54 5 .5 1 MAX T-1 and T-1¾, Infrared LEDs: 880nm, 940nm Size Lens Radiant Power at 20mA Minimum Typical INFRARED 1 E21 T-1 Clear 2.0mW/sr INFRARED 2 E22 T-1 Trans.Blue INFRARED 3 E23 T-1¾ Clear INFRARED 4 E24 T-1¾ Trans.Blue
|
Original
|
880nm,
940nm
880nm
300mcd
660nm
15mcd
590nm
E150-5V
infrared 660nm* 20mw
E151
E148-5V
E149-12V
E149-5V
E151-12V
E151-5V
E304-12V
E304-5V
|
PDF
|
LTE-C9301
Abstract: LTE-C1901 LTR-S320C LTR-C9303B LTR-733DBM1 LTR-5986D LTR-C1903B c1906 LTE-C1506 LTE-5238A
Text: 168 P TIR Through Hole & SMD Lite-On offers a broad range of discrete infrared components for application such as remote control, IR wire- less data transmission, security alarm & etc. Customers need infrared solutions featuring high power, high speed, wide viewing angels, high signal noise ratio and UL safety approval. The product line includes GaAs
|
Original
|
940nm
880nm
875nm/850nm
T-13/4
S3203B
940nm
LTR-C930DB
850nm
LTR-S320C
LTE-C9301
LTE-C1901
LTR-S320C
LTR-C9303B
LTR-733DBM1
LTR-5986D
LTR-C1903B
c1906
LTE-C1506
LTE-5238A
|
PDF
|
650NM photodiode
Abstract: 650nm 940NM PD-0066 photodiode 940nm
Text: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-0066 1. Scope : This specification applies to PIN silicon photodiode chips, Device No. PD-0066 2. Structure : 2-1. Planar type : PIN diode. 2-2. Electrodes : Top side Anode : Aluminum alloy . Back side ( Cathode ) : Gold alloy.
|
Original
|
PD-0066
038mm)
940nm
880nm
650nm
650NM photodiode
650nm
940NM
PD-0066
photodiode 940nm
|
PDF
|
650NM photodiode
Abstract: 650nm photodiode 940nm 940NM 650nm 5mw
Text: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-0120A 1. Scope : This specification applies to PIN silicon photodiode chips, Device No. PD-0120A 2. Structure : 2-1. Planar type : PIN diode. 2-2. Electrodes : Top side Anode : Aluminum alloy . Back side ( Cathode ) : Gold alloy.
|
Original
|
PD-0120A
038mm)
940nm
880nm
650nm
650NM photodiode
650nm
photodiode 940nm
940NM
650nm 5mw
|
PDF
|
3120A
Abstract: PD-3120A 650NM photodiode photodiode 940nm
Text: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-3120A 1. Scope : This specification applies to PIN silicon photodiode chips, Device No. PD-3120A 2. Structure : 2-1. Planar type : PIN diode. 2-2. Electrodes : Top side Anode : Aluminum alloy . Back side ( Cathode ) : Gold alloy.
|
Original
|
PD-3120A
038mm)
940nm
880nm
650nm
3120A
PD-3120A
650NM photodiode
photodiode 940nm
|
PDF
|
650NM photodiode
Abstract: 3066 650nm 880nm 940nm 880nm photodiode 940nm
Text: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-3066 1. Scope : This specification applies to PIN silicon photodiode chips, Device No. PD-3066 2. Structure : 2-1. Planar type : PIN diode. 2-2. Electrodes : Top side Anode : Aluminum alloy . Back side ( Cathode ) : Gold alloy.
|
Original
|
PD-3066
038mm)
49X49
940nm
880nm
650nm
650NM photodiode
3066
650nm
880nm
940nm 880nm
photodiode 940nm
|
PDF
|
PHOTO TRANSISTOR 940nm to-18
Abstract: cnd0214a PNA1801LS-ND LN58-ND hall effect position sensor 503 PNZ109L-ND PNZ14700R LN175PA-ND PNZ331CL LNA2W01L-ND
Text: Hall Effect Sensor ICs Panasonic’s Hall IC is a combination of a Hall element, amplifier, Schmidt circuit, and stabilized power supply/temperature compensator integrated on an identical chip by using the IC technology. It amplifies Hall element output at the amplifier,
|
Original
|
CND0204ACT-ND
CND0215ACT-ND
CND0208ACT-ND
CND0214ACT-ND
CND0209ACT-ND
CND0216ACT-ND
CND0204ATR-ND
CND0215ATR-ND
CND0208ATR-ND
CND0214ATR-ND
PHOTO TRANSISTOR 940nm to-18
cnd0214a
PNA1801LS-ND
LN58-ND
hall effect position sensor 503
PNZ109L-ND
PNZ14700R
LN175PA-ND
PNZ331CL
LNA2W01L-ND
|
PDF
|
BL-L512PD
Abstract: GaN photo diode PHOTO GAP DETECTOR BL-L512
Text: SILICON PHOTO DIODES BL-L512PD Features: 5.1*3.0*7.4mm SILICON PHOTO DIODES Choice of various viewing angles. Diffused and Water clear lens are available. Fast response time. High photo sensitivity. Small junction capacitance. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR
|
Original
|
BL-L512PD
880nm
940nm
430nm/Blue
470nm/Blue
505nm/Ultra
525nm/Ultra
BL-L512PD
GaN photo diode
PHOTO GAP DETECTOR
BL-L512
|
PDF
|
PHOTO GAP DETECTOR
Abstract: BL-L4802PD infrared 5mm 940nm GaAs blue light PHOTO detector
Text: SILICON PHOTO DIODES BL-L4802PD Features: 5*3.8*6.5mm SILICON PHOTO DIODES Choice of various viewing angles. Diffused and Water clear lens are available. Fast response time. High photo sensitivity. Small junction capacitance. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitter.
|
Original
|
BL-L4802PD
880nm
940nm
430nm/Blue
470nm/Blue
505nm/Ultra
525nm/Ultra
PHOTO GAP DETECTOR
BL-L4802PD
infrared 5mm 940nm GaAs
blue light PHOTO detector
|
PDF
|
PHOTO DIODES
Abstract: BL-L4802PD
Text: SILICON PHOTO DIODES BL-L4802PD Features: Ø 5*3.8*6.5mm SILICON PHOTO DIODES Ø Choice of various viewing angles. Ø Diffused and Water clear lens are available. Ø Ø Ø Ø Ø Ø Ø Fast response time. High photo sensitivity. Small junction capacitance.
|
Original
|
BL-L4802PD
25g/pcs
PHOTO DIODES
BL-L4802PD
|
PDF
|
PHOTO DIODES
Abstract: BL-L512PD
Text: SILICON PHOTO DIODES BL-L512PD Features: Ø 5.1*3.0*7.4mm SILICON PHOTO DIODES Ø Choice of various viewing angles. Ø Diffused and Water clear lens are available. Ø Ø Ø Ø Ø Ø Fast response time. High photo sensitivity. Small junction capacitance.The epoxy package itself is an IR filter, spectrally matched
|
Original
|
BL-L512PD
PHOTO DIODES
BL-L512PD
|
PDF
|
|
|
BL-L512PD
Abstract: Gan photo diode
Text: SILICON PHOTO DIODES BL-L512PD Features: Ø 5.1*3.0*7.4mm SILICON PHOTO DIODES Ø Choice of various viewing angles. Ø Diffused and Water clear lens are available. Ø Ø Ø Ø Ø Ø Ø Fast response time. High photo sensitivity. Small junction capacitance.
|
Original
|
BL-L512PD
30KHz
300Hz
100KHz
10KHz
BL-L512PD
Gan photo diode
|
PDF
|
Three-Five Systems
Abstract: TEMT1288C Three-Five TEMT1288 TEMT1288A TEMT1288B TEMT1288D 880NM Three-Five Systems voltage
Text: HIGH OUTPUT INFRARED EMITTERS 880 n m - T I PLASTIC PACKAGE TEMT1288 SERIES TH R EE-FIV E SYSTEM S, INC. PACKAGE OUTLINE FEATURES GaAIAs heterostructure material. Emits at 880nm Super High Conversion Efficiency/Maximum power output 2x Total Radiant Power output of 940nm product
|
OCR Scan
|
TEMT1288
9400m
700nfn
880nm
TEMT1288A
TEMT1288B
TEMT1288C
TEMT1288D
Three-Five Systems
Three-Five
Three-Five Systems voltage
|
PDF
|
TDET500E
Abstract: Three-Five Systems TDET500A TDET500C 6K8k TDET500B TDET500 OPTO-4
Text: NPN SILICON PHOTOTRANSISTOR T1 PLASTIC PACKAGE TDET500 SERIES T H R E E - F I V E S Y S T E M S . IN C . FEATU R ES P A C X A E E O U T LIN E Excellent Spectral Match to Three-FWe Systems’ 940nm and 880nm Emitters Standard T1 3mm Plastic Package for Cost
|
OCR Scan
|
TDET500
940nm
880nm
100H2
TDET500E
Three-Five Systems
TDET500A
TDET500C
6K8k
TDET500B
OPTO-4
|
PDF
|
LTH-1550-01
Abstract: LTR-4206E LTH 1550-01 IR SENSOR SLOTTED OPTICAL SENSOR 30107 ltr4206e LTE4238C LTR-209C LTE5238A LTR-306 546AB
Text: SELECTION GUIDE • INFRARED EMITTING DIODES DEVICE OUTLINE PACKAGE T-1 Modified 0.05" Pitch 0.5“ Lead 3 <t> c c3 s < ] # o n iI TYPICAL VIEWING V f TYP. PAGE ANGLE 020m A NO. WAVE LENGTH kP LENS 940nm Water Clear 0.4mW /cm J l3.0mW/sr 16 • 1.2V 20'
|
OCR Scan
|
940nm
LTE-209
26mW/srl
26mW/sr)
12mW/8r)
l60mW
45mW/sr)
LTE-209C
LTH-1550-01
LTR-4206E
LTH 1550-01 IR SENSOR
SLOTTED OPTICAL SENSOR 30107
ltr4206e
LTE4238C
LTR-209C
LTE5238A
LTR-306
546AB
|
PDF
|
infrared 5mm LED 940nm
Abstract: No abstract text available
Text: LEOTRONfCS PART NO. T o p r/ Tstg LED COLOR / see \ \ notes / ABSOLUTE MAX. RATINGS Ta=25*C up A Pd mW If mA F 1 G U R E ELECTRO-OPTICAL CHARACTERISTICS Ta=25*C Vf VIEW IrMAX \ P If mA Rod Pwr P0 mw typ /m a x ANGLE J*A nm typ Vr V F IG .1 T1 3mm 940nm INFRARED LEDS
|
OCR Scan
|
940nm
L120CWIR940B
1940nm
830nm
L200CWIRB30
l830nm
850nrn
L200CWIR850
l850nm
infrared 5mm LED 940nm
|
PDF
|
G793
Abstract: Three-Five Systems TEMT1288C TEMT1288 TEMT1288B
Text: HIGH O U T P U T IN F R A R E D E M IT T E R S 880 n m - T I P LA S T IC P A C K A G E TEMT1288 SERIES T H R E E -FIV E SYSTEMS, INC. P A C K A G E O U T LIN E FEA T U R ES 9.115 - 0.120 2.32 • 3.0S GaAIAs heterostructure material. Emits at 880nm Super High Conversion Efficiency/Maximum
|
OCR Scan
|
880nm-T1
TEMT1288
880nm
940nm
G793
Three-Five Systems
TEMT1288C
TEMT1288B
|
PDF
|
940nm 660nm
Abstract: 470nm 505nm OPB 800
Text: 15mm Intermediate Based LED Lamps Short Form Features • M ajor Power Savings T hree-Y ear Lamp W arranty High Intensity M aintenance Free Major Reduction in H eat Generation Choice of Illumination Angles Built-in Current Limiting Resistors • Direct Mount in Industry Standard Sockets
|
OCR Scan
|
660nm
B607-QUR-024S
595nm
120et
120VAC
EXL-R-031A
EXL-G-031
EXL-R-011A
EXL-G-011
940nm 660nm
470nm
505nm
OPB 800
|
PDF
|
E190
Abstract: E192 E193 E194 610NM
Text: b3E » GILIilAY TECHNICAL LAMP /• V IN L 1 + 00DD43Ü 151 IGTL £ t + - O.-' 1—. TT 3^77^40 C ATH O D E r m Cf ~ ü X Q —I O H 23 > HJ œ 1 E190 2 3 ’ Lens T-1 D iffused 12.5mcd 50m cd E191 T-1 Translucent 32.0m cd 200m cd E192 T-13/«i Diffused " 20.0m cd
|
OCR Scan
|
00DD43Ã
E190-E193
105m/W
125m/W
50m0nm
65mW/cm2
880nm
T-13/4
940nm
E190
E192
E193
E194
610NM
|
PDF
|
Photodiodes
Abstract: Phototransistors Infrared LED 940nm i r led 940nm
Text: INFRARED S E R I E S SELECTION GUIDE PART NO. SYSTEM • INFRARED EMITTIMG DIODES : • PHOTODIODES : LAMP CATEGORY • PHOTOTRANSISTORS : • PHOTOREFLECTORS : | pSIl LIGHT SOURCE | |- LENS APPEARANCE I 1 ^ 1 ^ [T"|
|
OCR Scan
|
940nm
880nm
840nm
Photodiodes
Phototransistors
Infrared LED 940nm
i r led 940nm
|
PDF
|
Phototransistors
Abstract: Infrared LED 940nm
Text: SELECTION GUtDE PART NO. SYSTEM PHOTOTRANSISTORS : PHOTOREFLECTORS : INFRARED EMITTIMG DIODES : PHOTODIODES : LIGHT SOURCE LAMP CATEGORY - BRIGHT LED PRODUCT - LENS A PPEA RAN CE BC D -D D D D D t XXX PACKAGE TYPE SPECIAL DEVICE SERIES IDENTIFICATION LEADS TYPE
|
OCR Scan
|
940nm
940nm
880nm
840nm
Phototransistors
Infrared LED 940nm
|
PDF
|