802.3 CRC32
Abstract: QUANTA power sequence gmii phy CRC-32 MPC8260 MPC860 P802 PT280 QLPG3116-PT280C Gigabit Ethernet PHY
Text: QLPG3116 POS-PHY Level 3 Gigabit Ethernet Controller Data Sheet QLPG3116 Controller Data Sheet Rev. B Corporate Information Telephone:408 990 4000 US 416 497 8884 (Canada) 44 1932 57 9011 (Europe) 49 89 930 86 170 (Germany) 852 8106 9091 (Asia) 81 45 470 5525 (Japan)
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QLPG3116
104MHz
QLPG3116-PT280C
802.3 CRC32
QUANTA power sequence
gmii phy
CRC-32
MPC8260
MPC860
P802
PT280
QLPG3116-PT280C
Gigabit Ethernet PHY
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MIPS r3000
Abstract: PowerPC 601 tx486 68EC020 AM386 68EC000 74F803 MPC950 R3000 R4000
Text: FEATURES 9 0 3 / 4 930 x 931 946 947 949 950 951 952 x 970 x 972 973 974 MOTOROLA M P C FAMILY MEMBERS 948 x x 980 x 990 991 992 x x x x On-Board Crystal Oszillator x x x x x x x x 8 x x x 14 x x x x 14 x x x 10 100 250 Differential PECL Reference Clock Input
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88LV926
MPC950
MPC947,
MPC948
74F803
74F1803
R3000,
R4000
MIPS r3000
PowerPC 601
tx486
68EC020
AM386
68EC000
74F803
R3000
R4000
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350 pf variable capacitor
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices
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MRF9045MR1)
MRF9045MR1
MRF9045MBR1
MRF9045MBR1)
350 pf variable capacitor
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44F3360
Abstract: 93F2975
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices
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MRF9030MBR1)
MRF9030MR1
MRF9030MBR1
44F3360
93F2975
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9601 TO 220
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices
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MRF9045MR1)
MRF9045MR1
MRF9045MBR1
MRF9045MBR1)
9601 TO 220
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices
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MRF9045MR1/D
MRF9045MR1
MRF9045MBR1
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VIPer 32
Abstract: TO272
Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9030MR1 MRF9030MBR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices
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MRF9030M/D
MRF9030MR1
MRF9030MBR1
VIPer 32
TO272
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9045MR1 MRF9045MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices
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MRF9045MR1/D
MRF9045MR1
MRF9045MBR1
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MRF9030MBR1
Abstract: MRF9030MR1 100B7R5JP
Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices
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MRF9030M/D
MRF9030MR1
MRF9030MBR1
MRF9030MR1
MRF9030MBR1
100B7R5JP
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MRF9030MBR1
Abstract: MRF9030MR1
Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices
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MRF9030M/D
MRF9030MR1
MRF9030MBR1
MRF9030MR1
DEVICEMRF9030M/D
MRF9030MBR1
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945 mosfet n
Abstract: 93F2975 c17 dual mos 9450 transistor 52169
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it
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MRF9060MBR1
945 mosfet n
93F2975
c17 dual mos
9450 transistor
52169
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A113
Abstract: MRF9045MBR1 MRF9045MR1
Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9045MR1 MRF9045MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Freescale Semiconductor, Inc.
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MRF9045MR1/D
MRF9045MR1
MRF9045MBR1
MRF9045MR1
A113
MRF9045MBR1
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MRF9060MB
Abstract: 93F2975 A04T-5 a113 bolt c17 dual mos 95F786
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices
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MRF9060MR1
MRF9060MBR1
MRF9060MB
93F2975
A04T-5
a113 bolt
c17 dual mos
95F786
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PDF
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MRF9045MBR1
Abstract: MRF9045MR1 6020G
Text: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices
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MRF9045MR1/D
MRF9045MR1
MRF9045MBR1
MRF9045MBR1
6020G
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RF-35-0300
Abstract: 9601 mosfet 9450 transistor motorola MOSFET 935
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices
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Cha41
MRF9030MR1
RF-35-0300
9601 mosfet
9450 transistor
motorola MOSFET 935
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices
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MRF9045R1
MRF9045LSR1
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MRF9045S
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices
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MRF9045
MRF9045S
MRF9045SR1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information Low Voltage PLL C lock Driver The M PC 930 is a 3.3V com patible, PLL based clock driver device targeted for desktop PC applications. W ith output frequencies of up to 125M Hz and output skew s of 500ps the M P C 930 is ideal for the most
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OCR Scan
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MPC930
500ps
BR1333
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930 series dtl
Abstract: E1914 930 dtl a935 A1907 DTL 957 DTL 950 motorola A953 DTL 937 dtl 946
Text: MAXIMUM RATINGS Rating Value Supply Operating Voltage Range - Vcc DTL MOTOROLA INTEGRATED CIRCUITS 930 Series 830 Series These DTL integrated circuits provide an excellent balance of speed, power dissipation, and noise immunity for general purpose digital
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-14-LEAD
-16-LEAD
-10-LEAD
10-Input
53bT6D3
930 series dtl
E1914
930 dtl
a935
A1907
DTL 957
DTL 950 motorola
A953
DTL 937
dtl 946
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930 dtl
Abstract: dtl 932
Text: MAXIMUM RATINGS Rating Value Supply Operating Voltage Range - Vcc DTL MOTOROLA INTEGRATED CIRCUITS 930 Series 830 Series These DTL integrated circuits provide an e xce lle nt balance of speed, power dissipation and noise immunity for general purpose digital
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OCR Scan
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-14-LEAD
-16-LEAD
I-10-LEAD
CHARACTERISTIC16-LEAD
16-LEAD
10-LEAD
24-LEAD
930 dtl
dtl 932
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930 series dtl
Abstract: 830 dtl DTL 957 dtl 948 expandable dual 4 input NAND DTL 950 motorola flip-flop 948 A9611 DTL 937
Text: LANSDALE SEMICONDUCTOR 32E D • 5 3 b S fl0 3 □□□□355 5 HLTE T -43-01 MAXIMUM RATINGS Rating Supply Operating Voltage Range - Vcc DTL MOTOROLA INTEGRATED CIRCUITS 930 Series 830 Series These MDTL integrated circuits provide an excellent balance of
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OCR Scan
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14-LEAD
16-LEAD
10-LEAD
24-LEAD
930 series dtl
830 dtl
DTL 957
dtl 948
expandable dual 4 input NAND
DTL 950 motorola
flip-flop 948
A9611
DTL 937
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5 input nand gate
Abstract: DUAL 5 input nand gate D1911 d948 D 1914 930 series dtl
Text: lansdale semiconductor 17E D • S 3 L T Ô D 3 OQQGE'ifi fi ■ T -V 3-/.3 T-H5-23-DS T -5 / - / 9 T-V 6 -07-0-7 T-H6 - 0 7 -0 9 MAXIMUM RATINGS Rating Supply Operating Voltage Range - Vco DTL MOTOROLA INTEGRATED CIRCUITS 930 Series 830 Series These MDTL integrated circuits
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T-H5-23--DS
14-LEAD
16-LEAD
10-LEAD
24-LEAD
5 input nand gate
DUAL 5 input nand gate
D1911
d948
D 1914
930 series dtl
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MC9306
Abstract: MC830 MC130 MC930F MC830F MC930G MC930 Motorola MC830 Motorola MC833 MC830G
Text: M D T L M C 930/830 series EXPANDABLE DUAL 4-INPOT "NANO" GATE MC930F MC96IF MC830F, P MC861F, P EXPANDABLE DUAL 3-2 INPUT "NAND" GATE MC930G MC961G MC830G MC861G This gate element, in the 14-pin flat and dual in-line packages, consists of two expandable 4-input
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MC930F
MC961F
MC830F,
MC861F,
MC930G
MC961G
MC830G
MC861G
MC930/830
14-pin
MC9306
MC830
MC130
MC830F
MC930
Motorola MC830
Motorola MC833
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Motorola MC833
Abstract: DSP56300 DSP56301 MC834 MC834F MC934 MC934F
Text: HEX IN V E R T E R > I MDTL M C 930/830 series MC934F • MC834F, P T his elem ent consists a t six inverter circuit:«. SW ITCHING TIM E T E S T C IR C U IT AN D W AVEFO RM S TEST tpd» Vd- R c 3 .9 k ohm * 3 0 pF 4 0 0 ohm« 6 0 pF m il- ' ' “ V * * *—
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MC930/830
MC934F
MC834F,
MCS34
DSP56300
DSP56301
DSP56300FM/AD
Motorola MC833
MC834
MC834F
MC934
MC934F
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