Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    91452E Search Results

    91452E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRG4BC30U

    Abstract: No abstract text available
    Text: PD - 91452E IRG4BC30U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		91452E IRG4BC30U O-220AB O-220AB IRG4BC30U PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91452E IRG4BC30U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		91452E IRG4BC30U O-220AB O-220AB PDF

    ic AM 12A

    Abstract: IRG4BC30U
    Text: PD - 91452E IRG4BC30U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		91452E IRG4BC30U O-220AB O-220AB ic AM 12A IRG4BC30U PDF