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    Untitled

    Abstract: No abstract text available
    Text: PD - 91392C RADIATION HARDENED POWER MOSFET THRU-HOLE T0-204AE IRH9250 200V, P-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level R DS(on) IRH9250 100K Rads (Si) 0.315Ω IRH93250 300K Rads (Si) 0.315Ω ID -14A -14A International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for


    Original     		PDF 91392C T0-204AE) IRH9250 IRH93250 The25Â -600A/Â -200V, MIL-STD-750, MlL-STD-750,

    IRH9250

    Abstract: IRH93250 T0204AE
    Text: PD - 91392C RADIATION HARDENED POWER MOSFET THRU-HOLE T0-204AE IRH9250 200V, P-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level R DS(on) IRH9250 100K Rads (Si) 0.315Ω IRH93250 300K Rads (Si) 0.315Ω ID -14A -14A International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for


    Original     		PDF 91392C T0-204AE) IRH9250 IRH93250 -600A/ -200V, MIL-STD-750, MlL-STD-750, O-204AE IRH9250 IRH93250 T0204AE