90d marking
Abstract: No abstract text available
Text: SUM90N08-4m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (Ω) ID (A) 0.0048 at VGS = 10 V 90d d 0.006 at VGS = 8 V 90 0.0085 at VGS = 6 V 90d • TrenchFET Power MOSFETS • 175 °C Junction Temperature
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Original
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SUM90N08-4m8P
O-263
SUM90N08-4m8P-E3
08-Apr-05
90d marking
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PDF
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74281
Abstract: No abstract text available
Text: SUP90N08-4m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (Ω) ID (A) 0.0048 at VGS = 10 V 90d d 0.006 at VGS = 8 V 90 0.0085 at VGS = 6 V 90d • TrenchFET Power MOSFETS • 175 °C Junction Temperature
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Original
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SUP90N08-4m8P
O-220AB
SUP90N08-4m8P-E3
08-Apr-05
74281
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PDF
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Untitled
Abstract: No abstract text available
Text: SUM90N08-4m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (Ω) ID (A) 0.0048 at VGS = 10 V 90d d 0.006 at VGS = 8 V 90 0.0085 at VGS = 6 V 90d • TrenchFET Power MOSFETS • 175 °C Junction Temperature
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Original
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SUM90N08-4m8P
O-263
SUM90N08-4m8P-E3
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: SUM90N06-4m4P Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Power MOSFET VDS (V) RDS(on) () ID (A) Qg (Typ) 60 0.0044 at VGS = 10 V 90d 105 • 175 °C Junction Temperatur RoHS • 100 % Rg and UIS Tested COMPLIANT
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Original
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SUM90N06-4m4P
O-263
SUM90N06-4m4P-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SUP90N08-8m2P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0082 at VGS = 10 V 90d 58 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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Original
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SUP90N08-8m2P
O-220AB
SUP90N08-8m2P-E3
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: SUM90N10-8m2P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 100 0.0082 at VGS = 10 V 90d 97 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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Original
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SUM90N10-8m2P
O-263
SUM90N10-8m2P-E3
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: SUM90N08-6m2P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0062 at VGS = 10 V 90d 75 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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Original
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SUM90N08-6m2P
O-263
SUM90N08-6m2P-E3
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: SUP90N08-8m2P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0082 at VGS = 10 V 90d 58 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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Original
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SUP90N08-8m2P
O-220AB
SUP90N08-8m2P-E3
18-Jul-08
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PDF
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74641
Abstract: SUP90N06-5M0P
Text: SUP90N06-5m0P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.005 at VGS = 10 V 90d 105 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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Original
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SUP90N06-5m0P
O-220AB
SUP90N06-5m0P-E3
18-Jul-08
74641
SUP90N06-5M0P
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PDF
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Untitled
Abstract: No abstract text available
Text: SUM90N06-5m5P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0055 at VGS = 10 V 90d 78.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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Original
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SUM90N06-5m5P
O-263
SUM90N06-5m5P-E3
18-Jul-08
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PDF
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ON148
Abstract: 72508
Text: SUP90N06-6m0P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.006 at VGS = 10 V 90d 78.5 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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Original
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SUP90N06-6m0P
O-220AB
SUP90N06-6m0P-E3
18-Jul-08
ON148
72508
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PDF
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Untitled
Abstract: No abstract text available
Text: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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Original
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SUM90N08-7m6P
O-263
SUM90N08-7m6P-E3
11-Mar-11
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PDF
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SUM90N08-6m2P-E3
Abstract: mosfet SOA testing
Text: SUM90N08-6m2P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0062 at VGS = 10 V 90d 75 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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Original
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SUM90N08-6m2P
O-263
SUM90N08-6m2P-E3
11-Mar-11
SUM90N08-6m2P-E3
mosfet SOA testing
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PDF
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Untitled
Abstract: No abstract text available
Text: SUP90N10-8m8P Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 100 0.0088 at VGS = 10 V 90d 97 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS • 100 % Rg and UIS Tested COMPLIANT
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Original
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SUP90N10-8m8P
2002/95/EC
O-220AB
SUP90N10-8m8P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification
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Original
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SUP90N08-7m7P
O-220AB
SUP90N08-7m7P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
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Untitled
Abstract: No abstract text available
Text: SUP90N10-8m8P Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 100 0.0088 at VGS = 10 V 90d 97 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS • 100 % Rg and UIS Tested COMPLIANT
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Original
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SUP90N10-8m8P
2002/95/EC
O-220AB
SUP90N10-8m8P-E3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification
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Original
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SUP90N08-7m7P
O-220AB
SUP90N08-7m7P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
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Untitled
Abstract: No abstract text available
Text: SUP90N10-8m8P Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 100 0.0088 at VGS = 10 V 90d 97 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS • 100 % Rg and UIS Tested COMPLIANT
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Original
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SUP90N10-8m8P
2002/95/EC
O-220AB
SUP90N10-8m8P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification
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Original
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SUP90N08-7m7P
O-220AB
SUP90N08-7m7P-E3
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification
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Original
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SUP90N08-7m7P
O-220AB
SUP90N08-7m7P-E3
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification
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Original
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SUP90N08-7m7P
O-220AB
SUP90N08-7m7P-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SUP90N10-8m8P Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 100 0.0088 at VGS = 10 V 90d 97 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS • 100 % Rg and UIS Tested COMPLIANT
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Original
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SUP90N10-8m8P
2002/95/EC
O-220AB
SUP90N10-8m8P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
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Untitled
Abstract: No abstract text available
Text: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification
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Original
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SUP90N08-7m7P
O-220AB
SUP90N08-7m7P-E3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: SUP90N10-8m8P Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 100 0.0088 at VGS = 10 V 90d 97 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS • 100 % Rg and UIS Tested COMPLIANT
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Original
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SUP90N10-8m8P
2002/95/EC
O-220AB
SUP90N10-8m8P-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
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