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    9012 TRANSISTORS Search Results

    9012 TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    9012 TRANSISTORS Datasheets Context Search

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    transistor c 9012

    Abstract: PNP 9012 9012 transistor 9012 9013 NPN 9012 9012 pnp 9012 transistor br 9012 9012 pnp transistor 9013 transistor pnp
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    PDF 20MHz transistor c 9012 PNP 9012 9012 transistor 9012 9013 NPN 9012 9012 pnp 9012 transistor br 9012 9012 pnp transistor 9013 transistor pnp

    transistor c 9012

    Abstract: PNP 9012 9012 br 9012 transistor 9012 9013 NPN 9012 transistor npn c 9013 9012 pnp 9012 transistor transistor 9013 H NPN
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    PDF 20MHz transistor c 9012 PNP 9012 9012 br 9012 transistor 9012 9013 NPN 9012 transistor npn c 9013 9012 pnp 9012 transistor transistor 9013 H NPN

    transistor c 9012

    Abstract: PNP 9012 BR 9012 9012 transistor 9012 pnp transistor transistor 9012 9013 NPN 9012 9012 Transistor 9012 G transistor s 9012
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    PDF 20MHz transistor c 9012 PNP 9012 BR 9012 9012 transistor 9012 pnp transistor transistor 9012 9013 NPN 9012 9012 Transistor 9012 G transistor s 9012

    transistor c 9012

    Abstract: PNP 9012 9012 pnp transistor 9012 9013 9012 transistor BR 9013 Transistor 9012 G NPN 9012 BR 9012 9012 transistor
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    PDF 20MHz transistor c 9012 PNP 9012 9012 pnp transistor 9012 9013 9012 transistor BR 9013 Transistor 9012 G NPN 9012 BR 9012 9012 transistor

    transistor BR 9013

    Abstract: transistor c 9013 transistor 9013 NPN 9013 s 9013 h PNP 9013 9013 transistor BR 9012 c 9013 g 9013 npn transistor
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    PDF 50MHz transistor BR 9013 transistor c 9013 transistor 9013 NPN 9013 s 9013 h PNP 9013 9013 transistor BR 9012 c 9013 g 9013 npn transistor

    transistor BR 9013

    Abstract: transistor c 9013 transistor 9013 9013 transistor BR 9013 9013 pnp NPN 9013 9013 NPN Transistor Transistor-9013 h 9013 NPN Output Transistor
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    PDF 50MHz transistor BR 9013 transistor c 9013 transistor 9013 9013 transistor BR 9013 9013 pnp NPN 9013 9013 NPN Transistor Transistor-9013 h 9013 NPN Output Transistor

    transistor c 9013

    Abstract: transistor BR 9013 NPN 9013 9013 transistor transistor 9013 BR 9013 9013 npn transistor 9013 pnp pin configuration NPN transistor 9013 npn 9013
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    PDF 50MHz transistor c 9013 transistor BR 9013 NPN 9013 9013 transistor transistor 9013 BR 9013 9013 npn transistor 9013 pnp pin configuration NPN transistor 9013 npn 9013

    NPN 9013

    Abstract: transistor BR 9013 pin configuration NPN transistor 9013 npn 9013 npn transistor 9013 transistor pin configuration NPN transistor 9012 PNP 9013 NPN transistor c 9013 9013 pnp data sheet NPN 9013
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    PDF 50MHz NPN 9013 transistor BR 9013 pin configuration NPN transistor 9013 npn 9013 npn transistor 9013 transistor pin configuration NPN transistor 9012 PNP 9013 NPN transistor c 9013 9013 pnp data sheet NPN 9013

    dell lcd 17 power supply diagram

    Abstract: DELL power supply diagram lcd dell power supply dell lcd capacitor 9013 npn npn 8050 9013 npn transistor audio pre-amplifier data sheet transistor 9013 NPN audio output BD NPN transistors
    Text: IZ8057 MULTI MELODY GENERATOR WITH ACCOMPANEMENT DESCRIPTION The IZ8057 series is a CMOS LSI chip designed for use in advance clock products. It is designed to play the melodies according to previously programmed information. The IZ8057 is capable of generating songs


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    PDF IZ8057 IZ8057 dell lcd 17 power supply diagram DELL power supply diagram lcd dell power supply dell lcd capacitor 9013 npn npn 8050 9013 npn transistor audio pre-amplifier data sheet transistor 9013 NPN audio output BD NPN transistors

    PNP 9012

    Abstract: transistor BR 9013 9012 pnp 9012 pnp transistor 9012 transistor transistor BR 9012 NPN 9012 br 9012 9012 9012 npn
    Text: HN 9012 PNP Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, G and H, according to its DC current gain. As complementary type


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    PDF 103mA PNP 9012 transistor BR 9013 9012 pnp 9012 pnp transistor 9012 transistor transistor BR 9012 NPN 9012 br 9012 9012 9012 npn

    data sheet transistor 9012

    Abstract: ADC9012BW 9012H 9012 ADC-9012H cs 9012 transistor 9012 transistor pin diagram 11/9012 transistor pin diagram
    Text: ADC-9012 CMOS MICROPROCESSOR-COMPATIBLE 12-BIT A/D CONVERTER P r e c i s i o n M o n o l i t h i c * Inc. PRELIMINARY FEATURES GENERAL DESCRIPTION • Low Cost • 12-Bit Accurate ±1/2 LSB Nonlinearity Error Over Temperature No Missing Codes at All Temperatures


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    PDF ADC-9012 12-BIT 16-Bit 24-Pin 24-Lead ADC-9012 TMS32020 data sheet transistor 9012 ADC9012BW 9012H 9012 ADC-9012H cs 9012 transistor 9012 transistor pin diagram 11/9012 transistor pin diagram

    9012 TO-92

    Abstract: transistor s 9012
    Text: DAVA 9012 TO-92 Plastic-Encapsulate Transistors FNP silicon TO-92 • ■ Ì È * tiÌ iÀ M £ < Ì T a = 2 5 ‘C m n a ìu ^ ÌS j£< I * VcBO -<10 V Vcso -20 V Vebo -5 V le -500 mA Pc 600 mW Ti 150 iC Tsli; - 55-150 TC 3.COLLECTOR ■ (T a= 2 5 'C )


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    transistor s9012

    Abstract: s9012 B77X S9012 to-92 s9012 transistor
    Text: TO-92 Plastic-Encapsulate Transistors S 9012 TRANSISTO R PNP F E A T U RES □ qi □ fct-• :/ j K • ?vv-7 - : ’ Pow er d is s ip a tio n TO-92 0 .6 2 5 W (Tam b=25°C ) P cm ; BBS C o lle c to r c u rre n t 1 .E M IT T E R Icm : -0 .5 A 2 .BASE base vo lta g e


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    PDF S9012 300uA -100uA -50UA -250UA -200UA 150uA transistor s9012 B77X S9012 to-92 s9012 transistor

    ksd999

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bGE D 7 ^ 4 1 4 2 0011525 fib3 • SMGK TRANSISTORS FUNCTION GUIDE TO-92 Type Transistors Continued Condition Device and Polarity NPN KSP66Û2 2N4401 KSP2222A 2N4400 2N3903 2N3904 KSP20 KSC1330 KSD471A PNP 2N4403 KSP2907 2N4402 2N3905


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    PDF KSP66Ã 2N4401 KSP2222A 2N4400 2N3903 2N3904 KSP20 KSC1330 KSD471A KSD227 ksd999

    SDT9011

    Abstract: No abstract text available
    Text: t ' i r A P I i ELECTRONICS INC ^3 DE I ODMHSTS DOOOOai 0 " f « a 7^-33'~ù/L INTERCHANGEABILITY CHART SILICON POWER TRANSISTORS ' Competitive . Type No. “ * Í ! Competitive Type No. Pirgo Replacement Type No. H 1 Competitive Type No. Pirgo Replacement


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    PDF PG5097 SDT4451 PG5049 T7608 PG5002 PG5050 PG5098 SDT4453 PG5003 PG5051 SDT9011

    2n511

    Abstract: 2N511A Texas Germanium 2N511B Germanium Transistor 2n511 transistor 9012 transistor power germanium transistor pnp Germanium power
    Text: TYPES 2N511, 2N511A, AND 2N511B P-N-P ALLOY-JUNCTION GERMANIUM HI6H-P0WER TRANSISTORS 40, 60 or 80 V01TS 10-A M P COLLECTOR CURRENT 150 -W ATT DISSIPATION lO W Ijo LOW VBE LOW THERMAL RESISTANCE for HIGH-POWER CONVERSION • HIGH-CURRENT SWITCHING AUDIO AMPLIFIER OUTPUT STAGES


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    PDF 2N511, 2N511A, 2N511B V01TS 2N511A 2n511 Texas Germanium Germanium Transistor 2n511 transistor 9012 transistor power germanium transistor pnp Germanium power

    2N3043

    Abstract: IN455 2N3047 2N930 TEXAS INSTRUMENTS 2N3046
    Text: TYPES 2N3043 THRU 2N3048 DUAL N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 7 4 2 0 8 , A U G U S T 1 9 6 3 - H E V t S E D A P R IL 1 96 7 DESIGNED FOR DIFFERENTIAL AMPLIFIERS AND HIGH-GAIN LOW-NOISE AUDIO AMPLIFIERS • Electrically Similar to 2N2639-2N2644 Series


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    PDF 2N3043 2N3048 2N2639-2N2644 2N929, 2N930 IN455 2N3047 2N930 TEXAS INSTRUMENTS 2N3046

    transistor BR 9013

    Abstract: NPN 9013 transistor c 9013 9013 npn transistor br 9013 transistor 9012 9013 9013 transistor Transistor 9013 9013 pnp transistor npn c 9013
    Text: HN 9013 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, G and H, according to its DC current gain. As complementary type


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    2N404

    Abstract: MPS404 2n404a a5t404
    Text: TYPES A5T404, A5T404A, A8T404, A8T404A P-N-P SILICON TRANSISTORS _B U L L E T I N N O . O L -S 7 3 1 1 9 7 9 , M A R C H 1973 SILECTt TRANSISTORS* FOR LOW-COST REPLACEMENT OF GERMANIUM 2N404, 2N404A A5T404, A5T404A Have Standard TO-18 100-mil Pin-Circle Configuration


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    PDF A5T404, A5T404A, A8T404, A8T404A 2N404, 2N404A A5T404A 100-mil 2N404 MPS404 2n404a a5t404

    2N3713

    Abstract: 2SC 9012 2N3714 2n3716 9012 transistor 2N371S k130k1
    Text: TYPES 2N3713, 2N3714, 2N3715, 2N3716 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND SWITCHING APPLICATIONS • 150 W at 25°C Case Temperature • 10 A Rated Collector Current • Min f hfe of 30 kHz <* Z2 2 * § m • Min f T of 4 MHz


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    PDF 2N3713, 2N3714, 2N3715, 2N3716 2N3713 2SC 9012 2N3714 9012 transistor 2N371S k130k1

    2n3997

    Abstract: 2N3996 9012 transistor Transistor 9012 ax 2n3999
    Text: TYPES 2N3996, 2N3997, 2N3998, 2N3999 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTORS FOR HIGH-SPEED POWER SWITCHING APPLICATIONS 3D CO H m C < < — rr* 2 rn £ to m m j • 30 W at 100°C Case Temperature ° ¡ z C/3 CO m 7 it -•Io yn 18 m tri n ? O N


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    PDF 2N3996, 2N3997, 2N3998, 2N3999 2N3997) T0-11I 2N3996 2N399lin 2n3997 9012 transistor Transistor 9012 ax

    2Sc4370a

    Abstract: 2SC3227 BC548 ,BC558 2sa1267 BC337/BC327 2sa1270 bc546 bc556 BC547 sot package sot-23 2SC3200 2SC3202
    Text: 1 Transistors Maximum Ratings Electrical Characteristics Ta—25°C Type No Ic Pc (V) (mA) (mW) 50 150 150 ^CE Ic (V) (mA) (V) 70^700 6 2 0.25 MAX fT I« (TYP) M IN NF (TYP) MAX VCE •c (dB) (V) (mA) f (KHz) Rg (KQ) 1 10 6 0.1 1 10 SO T-23 H 6 0.1 1 10


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    PDF 2SC387SS 2SA1S04S OT-23 2SC320I 2SA1269 O-92M 2SC3199 2SA1267 2SC3198A 2Sc4370a 2SC3227 BC548 ,BC558 BC337/BC327 2sa1270 bc546 bc556 BC547 sot package sot-23 2SC3200 2SC3202

    2sc3227

    Abstract: 2SA1267 2Sc4370a BC548 ,BC558 BC337/BC327 bc557 2sc3202 2sa1270 2SC3199 KTC9014
    Text: 1 Transistors Maximum Ratings Electrical Characteristics Ta—25°C Type No Ic Pc (V) (mA) (mW) 50 150 150 ^CE Ic (V) (mA) (V) 70^700 6 2 0.25 MAX fT I« (TYP) M IN NF (TYP) MAX VCE •c (dB) (V) (mA) f (KHz) Rg (KQ) 1 10 6 0.1 1 10 SO T-23 H 6 0.1 1 10


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    PDF 2SC387SS 2SA1S04S OT-23 2SC320I 2SA1269 O-92M 2SC3199 2SA1267 2SC3198A 2sc3227 2Sc4370a BC548 ,BC558 BC337/BC327 bc557 2sc3202 2sa1270 KTC9014

    3404

    Abstract: 75322 VSS19 Texas TMS 0100 LSI
    Text: MOS LSI TM S 3404 JC, TM S 3404 NC DUAL 512-BIT DYNAMIC SHIFT REGISTER features B 31 Two-phase dynamic logic 5-MHz shift rate C » a •i Low power - 0.1 mW/bit at 1 MHz Power supplies — +5 V, — 12 V Single-ended output T TL compatible — without external components


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    PDF 512-BIT 1024-bit 3404 75322 VSS19 Texas TMS 0100 LSI