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    9012 TO92 Search Results

    9012 TO92 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SER1590-122MLD Coilcraft Inc General Purpose Inductor, 1.2uH, 20%, 1 Element, Ferrite-Core, SMD, 6226, CHIP, 6226, ROHS COMPLIANT Visit Coilcraft Inc
    SER1590-122ML Coilcraft Inc Power inductor, high current, 20% tol, SMT, RoHS Visit Coilcraft Inc
    SER1590-122 Coilcraft Inc Power inductor, high current, 20% tol, SMT, RoHS Visit Coilcraft Inc
    SER1590-122MLB Coilcraft Inc General Purpose Inductor, 1.2uH, 20%, 1 Element, Ferrite-Core, SMD, 6226, CHIP, 6226, ROHS COMPLIANT Visit Coilcraft Inc
    ISL9012IRMNZ-T Renesas Electronics Corporation Dual LDO with Low Noise, Low IQ, and High PSRR Visit Renesas Electronics Corporation

    9012 TO92 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    9012 Unisonic

    Abstract: 9012L-
    Text: UNISONIC TECHNOLOGIES CO., LTD 9012 PNP SILICON EPITAXIAL TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION  1 FEATURES TO-92 *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity


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    PDF 625mW) -500mA) 9012L-x-T92-B 9012G-x-T92-B 9012L-x-T92-K 9012G-x-T92-K QW-R201-0at QW-R201-029 9012 Unisonic 9012L-

    transistor c 9012

    Abstract: PNP 9012 9012 transistor 9012 9013 NPN 9012 9012 pnp 9012 transistor br 9012 9012 pnp transistor 9013 transistor pnp
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    PDF 20MHz transistor c 9012 PNP 9012 9012 transistor 9012 9013 NPN 9012 9012 pnp 9012 transistor br 9012 9012 pnp transistor 9013 transistor pnp

    Transistor-9013 h

    Abstract: Transistor 9013 transistor BR 9013 9012 pnp data sheet transistor 9012 transistor c 9012 PNP 9012 data sheet NPN 9013 Transistor 9012 G 9013 transistor
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    9013 transistor

    Abstract: Transistor-9013 h UTC 9013 9013 NPN Transistor
    Text: UTC 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC 9012 1 TO-92 1: EMITTER


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    PDF 625mW) 500mA) 500mA 500mA, QW-R201-030 9013 transistor Transistor-9013 h UTC 9013 9013 NPN Transistor

    9013 npn

    Abstract: NPN 9013 transistor c 9013 9013 npn transistor 9013G C 9013 transistor transistor 9013 9013 NPN Output Transistor IC 9013 transistor 9013 H NPN
    Text: UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION „ FEATURES 1 * High total power dissipation. 625mW * High collector current. (500mA) * Excellent hFE linearity. * Complementary to UTC 9012


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    PDF 625mW) 500mA) 9013-x-T92-B 9013L-x-T92-B 9013G-x-T92-B 9013-x-T92-K 9013L-x-T92-K 9013G-x-T92-K 9013-x-T92-R 9013L-x-T92-R 9013 npn NPN 9013 transistor c 9013 9013 npn transistor 9013G C 9013 transistor transistor 9013 9013 NPN Output Transistor IC 9013 transistor 9013 H NPN

    9012 Unisonic

    Abstract: No abstract text available
    Text: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER


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    PDF 625mW) -500mA) -50mA -500mA -500mA -10mA QW-R201-029 9012 Unisonic

    transistor c 9012

    Abstract: PNP 9012 9012 br 9012 transistor 9012 9013 NPN 9012 transistor npn c 9013 9012 pnp 9012 transistor transistor 9013 H NPN
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    PDF 20MHz transistor c 9012 PNP 9012 9012 br 9012 transistor 9012 9013 NPN 9012 transistor npn c 9013 9012 pnp 9012 transistor transistor 9013 H NPN

    transistor c 9012

    Abstract: PNP 9012 BR 9012 9012 transistor 9012 pnp transistor transistor 9012 9013 NPN 9012 9012 Transistor 9012 G transistor s 9012
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    PDF 20MHz transistor c 9012 PNP 9012 BR 9012 9012 transistor 9012 pnp transistor transistor 9012 9013 NPN 9012 9012 Transistor 9012 G transistor s 9012

    Untitled

    Abstract: No abstract text available
    Text: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER


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    PDF 625mW) -500mA) QW-R201-029

    transistor c 9012

    Abstract: PNP 9012 9012 pnp transistor 9012 9013 9012 transistor BR 9013 Transistor 9012 G NPN 9012 BR 9012 9012 transistor
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    PDF 20MHz transistor c 9012 PNP 9012 9012 pnp transistor 9012 9013 9012 transistor BR 9013 Transistor 9012 G NPN 9012 BR 9012 9012 transistor

    9012 pnp

    Abstract: UTC 9013 9012 transistor data sheet transistor 9012 Transistor 9012 G PNP 9012 transistor c 9012 9012 pnp transistor 9013 transistor Transistor 9013
    Text: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER


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    PDF 625mW) -500mA) QW-R201-029 9012 pnp UTC 9013 9012 transistor data sheet transistor 9012 Transistor 9012 G PNP 9012 transistor c 9012 9012 pnp transistor 9013 transistor Transistor 9013

    UTC 9013

    Abstract: 9013 NPN data sheet NPN 9013 transistor c 9013 9013 npn transistor NPN SILICON TRANSISTOR 9013 UTC9013 NPN 9013 PDF DATA SHEET 9013npn 9012 Unisonic
    Text: UTC 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC 9012 1 TO-92 1: EMITTER


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    PDF 625mW) 500mA) QW-R201-030 UTC 9013 9013 NPN data sheet NPN 9013 transistor c 9013 9013 npn transistor NPN SILICON TRANSISTOR 9013 UTC9013 NPN 9013 PDF DATA SHEET 9013npn 9012 Unisonic

    Transistor 9012

    Abstract: H9012 8550S SS9012
    Text: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 9012 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸:4 英寸(100mm) 芯片代码:A047BJ-00 芯片厚度:240±20µm 管芯尺寸:470x470µm 2 焊位尺寸:B 极 103×103µm2,E 极 98×98µm2


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    PDF 100mm A047BJ-00 SS9012H90128550S 625mW -700mA -25VIE -50mA -500mA Transistor 9012 H9012 8550S SS9012

    Transistor 9012

    Abstract: H9012 equivalent a043 8550S H9012 SS9012 A043BJ-00 VCEO-20V
    Text: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 9012 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸:4 英寸(100mm) 芯片代码:A043BJ-00 芯片厚度:240±20µm 管芯尺寸:430x430µm 2 焊位尺寸:B 极 107×107µm2,E 极 101×101µm2


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    PDF 100mm A043BJ-00 SS9012H90128550S 625mW -500mA -25VIE -50mA Transistor 9012 H9012 equivalent a043 8550S H9012 SS9012 A043BJ-00 VCEO-20V

    MLD571

    Abstract: discription 12v lamp driver
    Text: MLD571 ONE Lamp / LED Driver DISCRIPTION The MLD571 are low power CMOS LSI in TO-92 package, designed for the appliication of lamp and LED flash driver. It can be operated without any external components. Therefore it is very suitable for such applications as flash badge, gift card, flash ear-ring and other flash products.


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    PDF MLD571 MLD571 discription 12v lamp driver

    transistor BR 9013

    Abstract: transistor c 9013 transistor 9013 NPN 9013 s 9013 h PNP 9013 9013 transistor BR 9012 c 9013 g 9013 npn transistor
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    PDF 50MHz transistor BR 9013 transistor c 9013 transistor 9013 NPN 9013 s 9013 h PNP 9013 9013 transistor BR 9012 c 9013 g 9013 npn transistor

    PNP 9012

    Abstract: transistor BR 9013 9012 pnp 9012 pnp transistor 9012 transistor transistor BR 9012 NPN 9012 br 9012 9012 9012 npn
    Text: HN 9012 PNP Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, G and H, according to its DC current gain. As complementary type


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    PDF 103mA PNP 9012 transistor BR 9013 9012 pnp 9012 pnp transistor 9012 transistor transistor BR 9012 NPN 9012 br 9012 9012 9012 npn

    Untitled

    Abstract: No abstract text available
    Text: LED Driver TYPE NO. MLD571 OPERATING VOLTAGE MIN MAX V (V) 1.2 4.5 OPERATING OUTPUT SINK CURRENT CURRENT MAX MIN (mA) (mA) 500 1 Application Circuit R1 0 -100 ohm 9012 or 8550 3-30 0 - 100 ohm FLASH RATE CASE NO. Hz (Approx.) 1.2 TO-92


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    PDF MLD571

    CP1005

    Abstract: 9011 9012 9013 9014 9018 C 9014 transistor transistor 9014 C npn 9011 NPN transistor 9011 transistor 9015 PNP 9016 9013 NPN Output Transistor transistor npn c 9014
    Text: fi* £ ,. ¿YrA \ *j i w 'äf? m m H :;1 i Ä \jif- ^ s •'«•J-, m &3W^m¡jfir . Ï 'iS.fi. I FM SERIES AM. FM RADIO TRANSISTOR KIT - ^ttk SELECTION AIV! K M 9000 ¡8a¡$ W bJ . GUIDE FOR RADIO TRANSISTOR KIT Output KM 9012 AM RECEIVER? y Conv. IF KM901I


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    PDF KM90II KM90I5 KM901I/8 KM90II/8 KM90I4 KM9015 KM90I: KM90i to-92a CP1005 9011 9012 9013 9014 9018 C 9014 transistor transistor 9014 C npn 9011 NPN transistor 9011 transistor 9015 PNP 9016 9013 NPN Output Transistor transistor npn c 9014

    diode st 4148

    Abstract: ST 4148 LL4148 st 8050 sot-23 st 8050 9016 transistor 9014 SOT 23 4148 st TRANSISTOR 4148 1N4001-1N4007
    Text: TRANSISTOR & DIODE Transistor -S T 8050 - 1.5A TO-92 - ST 8050 (TO-92) - ST 8550 - 1.5A (TO-92) - ST 8550 (TO-92) - ST 9011 (TO-92) - ST 9012 (TO-92) - ST 9013 (TO-92) - ST 9014 (TO-92 -S T 9015 (TO-92) - ST 9016 (TO-92) -S T 9018 (TO-92) o - MMBT8050LT1 -1.5A (SOT-23)


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    PDF MMBT8050LT1 OT-23) -LL4001-LL4007 -LL4148 1N4001-1N4007 diode st 4148 ST 4148 LL4148 st 8050 sot-23 st 8050 9016 transistor 9014 SOT 23 4148 st TRANSISTOR 4148

    Untitled

    Abstract: No abstract text available
    Text: SEM ICONDUCTOR KTC9013 TECHNI CAL DATA EPI TAXI AL PLANAR NPN TRA NS IST OR G E N E R A L PUR PO SE A PPLICATION. SW ITC H IN G APPLICATIO N. FEA T U RE S • Excellent h FE Linearity. • Complementary to K TC 9012. DIM G -1 M A X IM U M RATING Ta=25°C


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    PDF KTC9013

    9012 TO-92

    Abstract: transistor s 9012
    Text: DAVA 9012 TO-92 Plastic-Encapsulate Transistors FNP silicon TO-92 • ■ Ì È * tiÌ iÀ M £ < Ì T a = 2 5 ‘C m n a ìu ^ ÌS j£< I * VcBO -<10 V Vcso -20 V Vebo -5 V le -500 mA Pc 600 mW Ti 150 iC Tsli; - 55-150 TC 3.COLLECTOR ■ (T a= 2 5 'C )


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    PDF

    transistor s9012

    Abstract: s9012 B77X S9012 to-92 s9012 transistor
    Text: TO-92 Plastic-Encapsulate Transistors S 9012 TRANSISTO R PNP F E A T U RES □ qi □ fct-• :/ j K • ?vv-7 - : ’ Pow er d is s ip a tio n TO-92 0 .6 2 5 W (Tam b=25°C ) P cm ; BBS C o lle c to r c u rre n t 1 .E M IT T E R Icm : -0 .5 A 2 .BASE base vo lta g e


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    PDF S9012 300uA -100uA -50UA -250UA -200UA 150uA transistor s9012 B77X S9012 to-92 s9012 transistor

    Untitled

    Abstract: No abstract text available
    Text: CRO MLD571 ONE Lamp / LED Driver DISCRIPTION The MLD571 are low power CMOS LSI in TO-92 package, designed for the application o f lamp and LED flash driver it can be operated without any external components. Therefore it is very suitable for such applications as flash badge, gift card, flash ear-ring and other flash products.


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    PDF MLD571 MLD571