Untitled
Abstract: No abstract text available
Text: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit PRODUCTNAME BU7962GUW FUNCTION Serial Interface for Mobile Devices Application MSDL3 Mobile Shrink Data Link 3 Deserializer LSI FEATURES •Maximum transmission rate of highspeed differential interface MSDL3 is 900Mbps.
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BU7962GUW
900Mbps.
24bit
30MHz
R0039A
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PD10
Abstract: fxs interface integrated circuit BU7962
Text: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit PRODUCTNAME BU7962GUW FUNCTION Serial Interface for Mobile Devices Application MSDL3 Mobile Shrink Data Link 3 Deserializer LSI FEATURES •Maximum transmission rate of highspeed differential interface MSDL3 is 900Mbps.
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BU7962GUW
900Mbps.
24bit
30MHz
R0039A
PD10
fxs interface integrated circuit
BU7962
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PDF
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Untitled
Abstract: No abstract text available
Text: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit PRODUCTNAME BU7961GUW FUNCTION Serial Interface for Mobile Devices Application MSDL3 Mobile Shrink Data Link 3 Serializer LSI FEATURES •Maximum transmission rate of highspeed differential interface MSDL3 is 900Mbps.
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BU7961GUW
900Mbps.
24bit
30MHz.
R0039A
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PDF
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BU7961
Abstract: PD10
Text: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit PRODUCTNAME BU7961GUW FUNCTION Serial Interface for Mobile Devices Application MSDL3 Mobile Shrink Data Link 3 Serializer LSI FEATURES •Maximum transmission rate of highspeed differential interface MSDL3 is 900Mbps.
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BU7961GUW
900Mbps.
24bit
30MHz.
R0039A
BU7961
PD10
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PDF
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LVDS to MIPI CSI
Abstract: LVDS to mipi bridge MIPI csi-2 mipi csi-2 receiver mipi csi receiver MIPI D-PHY mipi csi-2 transmitter MIPI csi bridge 400x240 MIPI csi-2 receivers
Text: DS90UR910Q 10 - 75 MHz 24-bit Color FPD-Link II to CSI-2 Converter General Description Features The DS90UR910Q is an interface bridge chip that recovers data from the FPD-Link II serial bit stream and converts into a Camera Serial Interface CSI-2 format compatible with Mobile Industry Processor Interface (MIPI) specifications. It recovers the 24- or 18-bit RGB data and 3 video sync-signals
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DS90UR910Q
24-bit
DS90UR910Q
18-bit
SQA40A
LVDS to MIPI CSI
LVDS to mipi bridge
MIPI csi-2
mipi csi-2 receiver
mipi csi receiver
MIPI D-PHY
mipi csi-2 transmitter
MIPI csi bridge
400x240
MIPI csi-2 receivers
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PDF
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k4n26323ae
Abstract: K4N26 K4N26323AE-GC20 K4N26323AE-GC22 K4N26323AE-GC25
Text: 128M GDDR2 SDRAM K4N26323AE-GC 128Mbit GDDR2 SDRAM 1M x 32Bit x 4 Banks GDDR2 SDRAM with Differential Data Strobe and DLL Revision 1.7 January 2003 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 1.7 Jan. 2003
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K4N26323AE-GC
128Mbit
32Bit
k4n26323ae
K4N26
K4N26323AE-GC20
K4N26323AE-GC22
K4N26323AE-GC25
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PDF
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Untitled
Abstract: No abstract text available
Text: 256M gDDR2 SDRAM K4N56163QG 256Mbit gDDR2 SDRAM Revision 1.1 April 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4N56163QG
256Mbit
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16 QAM modulation matlab code
Abstract: lx5280 CZ80PIO PLD-10 uart 8250 CRC matlab lEXRA lx5280 qpsk simulink matlab OFDM DSP Builder Alcatel dsp
Text: インテレクチャル・プロパティ・ セレクタ・ガイド System-on-a-Programmable-Chipソリューションの ためのIPファンクション アルテラのIPファンクションについて 数百万ゲートのプログラマブル・ロジック・デバイス（PLD）の登
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AMPP15
16 QAM modulation matlab code
lx5280
CZ80PIO
PLD-10
uart 8250
CRC matlab
lEXRA lx5280
qpsk simulink matlab
OFDM DSP Builder
Alcatel dsp
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PDF
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gddr5
Abstract: K4N51163QC-ZC K4N51163QC-ZC25 K4N51163QC-ZC2A K4N51163QC-ZC33 K4N51163QC-ZC36
Text: 512M gDDR2 SDRAM K4N51163QC-ZC 512Mbit gDDR2 SDRAM Revision 1.5 October 2005 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4N51163QC-ZC
512Mbit
gddr5
K4N51163QC-ZC
K4N51163QC-ZC25
K4N51163QC-ZC2A
K4N51163QC-ZC33
K4N51163QC-ZC36
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PDF
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Untitled
Abstract: No abstract text available
Text: HY5DW573222F P 256M(8Mx32) GDDR SDRAM HY5DW573222F(P) This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5DW573222F
8Mx32)
500Mhz
450Mhz
144ball
55Max
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PDF
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K4N56163QI-ZC25
Abstract: No abstract text available
Text: 256M gDDR2 SDRAM K4N56163QI 256Mbit gDDR2 SDRAM Revision 1.1 May 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4N56163QI
256Mbit
K4N56163QI-ZC25
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HY5PS121621BFP
Abstract: HY5PS121621B HY5PS121621BFP-2
Text: HY5PS121621BFP 512Mb 32Mx16 gDDR2 SDRAM HY5PS121621BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5PS121621BFP
512Mb
32Mx16)
1HY5PS121621BFP
300Mhz
400Mhz
500MHz
84Ball
HY5PS121621BFP
HY5PS121621B
HY5PS121621BFP-2
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PDF
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Untitled
Abstract: No abstract text available
Text: HY5RS573225F 256M 8Mx32 GDDR3 SDRAM HY5RS573225F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.6 / Oct. 2004
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HY5RS573225F
8Mx32)
240ohm
240ohms
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PDF
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Untitled
Abstract: No abstract text available
Text: HY5PS121621BFP 512Mb 32Mx16 DDR2 SDRAM HY5PS121621BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5PS121621BFP
512Mb
32Mx16)
1HY5PS121621BFP
300Mhz
400Mhz
500MHz
450MHz/500MHz)
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HY5PS561621AFP-33
Abstract: No abstract text available
Text: HY5PS561621AF P 256Mb(16Mx16) gDDR2 SDRAM HY5PS561621AF(P) This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5PS561621AF
256Mb
16Mx16)
1HY5PS561621AF
300Mhz
84Ball
HY5PS561621AFP-33
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PDF
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Untitled
Abstract: No abstract text available
Text: HY5PS561621AFP 256Mb 16Mx16 gDDR2 SDRAM HY5PS561621AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5PS561621AFP
256Mb
16Mx16)
1HY5PS561621AFP
300Mhz
450MHz)
HY5PS56ance
84Ball
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PDF
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Untitled
Abstract: No abstract text available
Text: 512M gDDR2 SDRAM K4N51163QE 512Mbit gDDR2 SDRAM Revision 1.3 August 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4N51163QE
512Mbit
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PDF
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amcc volta
Abstract: No abstract text available
Text: S4814PBI21 Volta 48 FINAL Datasheet Revision 1.13 November 21, 2005 AMCC - PROPRIETARY AND CONFIDENTIAL RESTRICTED DISTRIBUTION NDA REQUIRED Disclaimer: AMCC is providing information within this data sheet relating to LCAS mode in which a customer may choose to operate the Volta. The data set forth
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S4814PBI21
amcc volta
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K4N56163QF-GC37
Abstract: K4N56163QF-ZC gddr5 JESD51-2 K4N56163QF-GC K4N56163QF-GC25 K4N56163QF-GC30
Text: 256M gDDR2 SDRAM K4N56163QF-GC 256Mbit gDDR2 SDRAM Revision 1.6 April 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4N56163QF-GC
256Mbit
K4N56163QF-GC37
K4N56163QF-ZC
gddr5
JESD51-2
K4N56163QF-GC
K4N56163QF-GC25
K4N56163QF-GC30
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PDF
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HY5DW573222F
Abstract: No abstract text available
Text: HY5DW573222F 256M 8Mx32 GDDR SDRAM HY5DW573222F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.2 / Feb. 2004
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HY5DW573222F
8Mx32)
HY5DW573222
456-bit
8Mx32
144ball
HY5DW573222F
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PDF
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HY5DU113222FM
Abstract: No abstract text available
Text: HY5DU113222FM P 512M(16Mx32) GDDR SDRAM HY5DU113222FM(P) This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5DU113222FM
16Mx32)
912-bit
256Mbit
144ball
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PDF
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HY5DU283222AF-33
Abstract: HY5DU283222AF HY5DU283222AF-2 HY5DU283222AF-22 HY5DU283222AF-25 HY5DU283222AF-28 HY5DU283222AF-36
Text: HY5DU283222AF P 128M(4Mx32) DDR SDRAM HY5DU283222AF(P) This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5DU283222AF
4Mx32)
HY5DU283222AF-33/36
222MHz
HY5DU283222AF-36
HY5DU283222AF-36
HY5DU283222AF-28/33
HY5DU283222AF-33
HY5DU283222AF-2
HY5DU283222AF-22
HY5DU283222AF-25
HY5DU283222AF-28
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PDF
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HY5DU283222AF
Abstract: HY5DU283222AF-2 HY5DU283222AF-28 HY5DU283222AF-36 termal resistor 250 HY5DU283222AFP-33
Text: HY5DU283222AF P 128M(4Mx32) GDDR SDRAM HY5DU283222AF(P) This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5DU283222AF
4Mx32)
500MHz
222MHz
HY5DU283222AF-36
HY5DU283222AF-36
HY5DU283222AF-28/33
HY5DU283222AF-2
HY5DU283222AF-28
termal resistor 250
HY5DU283222AFP-33
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PDF
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Untitled
Abstract: No abstract text available
Text: 256M GDDR SDRAM K4D553235F-GC 256Mbit GDDR SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.1 December 2004 Samsung Electronics reserves the right to change products or specification without notice.
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K4D553235F-GC
256Mbit
32Bit
144-Ball
K4D553235F-GC20
400MHz
-GJ25
-GC25
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