Untitled
Abstract: No abstract text available
Text: Insulated Gate Bipolar Transistors Page 1 of 1 Home Package Device Type BVCES Volts IC CONT Amp VCE(sat) Volts tf* ns (typical) CIES q JC pF (typical) ° C/W (typical) TO-254 NSG20640 600@90° C 31 2.0 800 1500 1.25 TO-254 NSG20648A 600@90° C 24 2.9 100
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O-254
O-257
O-258
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ADP1108
Abstract: ADP1073 ADP1109 ADP1109A ADP1110 ADP1111 ADP1173 ADP3000 LTC1073 voltage 9V to 3,3V
Text: POWER MANAGEMENT: DC to DC Converters, Switching Regulators, Internal Switch Part Number Vin Volts Vout Volts Vsat Vsat Current @Vin/Iswitch mA @Vin/Iswitch mA Limit V V Input Iq max uA Oscillator Duty Cycle KHz % yes yes yes yes yes yes 165 90 300 110 110
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ADP3000
ADP1073
ADP1108
ADP1110
ADP1111
ADP1173
PAGE-113
ADP1108
ADP1073
ADP1109
ADP1109A
ADP1110
ADP1111
ADP1173
ADP3000
LTC1073
voltage 9V to 3,3V
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LTC1073
Abstract: DC to DC step down converters 5V to 3.3V DC to DC step down converters 12V to 3.3V ADP1108 ADP1073 ADP1109 ADP1109A ADP1110 ADP1111 ADP1173
Text: POWER MANAGEMENT: DC to DC Converters, Switching Regulators, Internal Switch Part Number Vin Volts Vout Volts Vsat Vsat @Vin/Iswitch mA @Vin/Iswitch mA V V Current Limit Input Iq max uA Oscillator Duty Cycle KHz % yes yes yes yes yes yes 165 90 300 110 110
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ADP3000
ADP1073
ADP1108
ADP1110
ADP1111
ADP1173
PAGE-113
LTC1073
DC to DC step down converters 5V to 3.3V
DC to DC step down converters 12V to 3.3V
ADP1108
ADP1073
ADP1109
ADP1109A
ADP1110
ADP1111
ADP1173
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2av54
Abstract: 1010-1018 s-av71
Text: 6,20 MAXIMUM CONDITION 17,16 BY T. 10 mA22 OUTPUT VOLTAGE OPERATED (ON) 0.2 0. VOLTS V OUTPUT LEAKAGE CURRENT 2 (RELEASED) (OFF) 0.2 10 A #0,15 . 25 $ C +0,40 -0,20 DRAWING NUMBER 8 ISSUE CHECK 4 S 1 S 2 S 1 S 10% TO 90% 90% TO 10%# VOLTAGE EXTERNALLY APPLIED TO OUTPUT
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5M-1982
2AV54
2av54
1010-1018
s-av71
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12 volts 3 amps regulator
Abstract: terminal 380v 100 a PT78ST100 PT78ST105 PT78ST112 PT78ST133
Text: For assistance or to order, call Application Notes Mechanical Outline Product Selector Guide 800 531-5782 PT78ST100 S e r i e s 1.5 AMP POSITIVE STEP-DOWN INTEGRATED SWITCHING REGULATOR • • • • • • • Standard Application Vin 1 PT78ST100 C1
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PT78ST100
PT78ST105,
PT78ST133,
12 volts 3 amps regulator
terminal 380v 100 a
PT78ST105
PT78ST112
PT78ST133
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equivalent irf840
Abstract: 2SK173 2N6658 BUZ44 vn0106n1 VN64GA BUZ 840 VN0104N4 VN0106N5 IRF232
Text: Silico n ix 1-1? f l MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60
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O-220
VN1000D
IRF522
VN1000A
IRF540
IRF632
IRF640
equivalent irf840
2SK173
2N6658
BUZ44
vn0106n1
VN64GA
BUZ 840
VN0104N4
VN0106N5
IRF232
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VN64GA
Abstract: IRF140 IRF142 IRF141 75 LS 541 IRF143 IRF540 Part number 543 20 018 00 2N6658 IRF130
Text: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35
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IRF150
IRF152
IRF140
IRF142
VN1000A
IRF130
VN1001A
IRF132
IRF120
IRF122
VN64GA
IRF140
IRF142
IRF141
75 LS 541
IRF143
IRF540
Part number 543 20 018 00
2N6658
IRF130
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1RF720
Abstract: VN64GA 1rf820 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142
Text: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35
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OCR Scan
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IRF150
IRF152
IRF140
IRF142
VN1000A
IRF130
VN1001A
IRF132
IRF120
IRF122
1RF720
VN64GA
1rf820
2N6658
IRF120
IRF122
IRF130
IRF132
IRF140
IRF142
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VN64GA
Abstract: 1rf820 IRF740 VN1001A 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140
Text: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35
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IRF150
IRF152
IRF140
IRF142
VN1000A
IRF130
VN1001A
IRF132
IRF120
IRF122
VN64GA
1rf820
IRF740
VN1001A
2N6658
IRF120
IRF122
IRF130
IRF132
IRF140
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VN64GA
Abstract: 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150 IRF152
Text: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35
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IRF150
IRF152
IRF140
IRF142
VN1000A
IRF130
VN1001A
IRF132
IRF120
IRF122
VN64GA
2N6658
IRF120
IRF122
IRF130
IRF132
IRF140
IRF142
IRF150
IRF152
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irf120
Abstract: VN64GA oni 350 2N6658 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150
Text: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35
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IRF150
IRF152
IRF140
IRF142
VN1000A
IRF130
VN1001A
IRF132
IRF120
IRF122
irf120
VN64GA
oni 350
2N6658
IRF122
IRF130
IRF132
IRF140
IRF142
IRF150
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1RF820
Abstract: VN64GA 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150
Text: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35
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IRF150
IRF152
IRF140
IRF142
VN1000A
IRF130
VN1001A
IRF132
IRF120
IRF122
1RF820
VN64GA
2N6658
IRF120
IRF122
IRF130
IRF132
IRF140
IRF142
IRF150
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pn junction DIODE 1N4001
Abstract: ibf830 VN64GA 176j 4502A 2N6658 IRF120 IRF122 IRF130 IRF132
Text: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100 100 100 100 100 100 90 90
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IRF150
IRF152
IRF140
IRF142
VN1000A
IRF130
VN1001A
IRF132
IRF120
IRF122
pn junction DIODE 1N4001
ibf830
VN64GA
176j
4502A
2N6658
IRF120
IRF122
IRF130
IRF132
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VN64GA
Abstract: IRF733 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150
Text: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100 100 100 100 100 100 90 90
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IRF150
IRF152
IRF140
IRF142
VN1000A
IRF130
VN1001A
IRF132
IRF120
IRF122
VN64GA
IRF733
2N6658
IRF120
IRF122
IRF130
IRF132
IRF140
IRF142
IRF150
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Untitled
Abstract: No abstract text available
Text: Maximum Breakdown Voltage Diag. No. Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) •c BVCBO BV ceo BVeb0 hFE Pd fT TO63 15 20 150 90 7 20 Min 200 20 High Current Amp, Fast Switch TO61 Isol 16 10 120 100 6 30 Min 115 30 NPN-Si
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NTE92)
93MCP
NTE92
NTE93
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irf150
Abstract: VN64GA IRF152 IRF1501 IRF151 IRF153 I304 IRF-150 1RF720 IRF150 To3 package
Text: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100 100 100 100 100 100 90 90
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irf150
irf152
irf140
irf142
vn1000a
irf130
vn1001a
irf132
irf120
irf122
irf150
VN64GA
IRF152
IRF1501
IRF151
IRF153
I304
IRF-150
1RF720
IRF150 To3 package
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i3016
Abstract: N109
Text: TV FIXED VOLTAGE REGULATORS POSITIVE Regulated Voltage Out Volts VquI NTE Type Number Voltage In (Volts) Diagram Number. Case Style Output Current (Amps) Power Dissipation •o Pd‘ (Walts) V|„ Min Max 4 1 8V ± 0.5V 1840 5-L e a d SIP 453 90 145 2 27
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OCR Scan
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T0220
i3016
N109
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D60T2575
Abstract: D60T2590 1S697 D60T307510 D62T D62T307510 FC75A
Text: POlüEREX INC Tfl DE j T S ' m a i QOQSbb? 0 ^ M |j r |l J F y IM . » D60T/D62T D60T/D62T Powerex, Inc., Hillls S treet, Youngwoad, Pennsylvania 1S697 412 925-7272 ~ j - 33^15" _ 75 _ 90 NPN Power Switching Transistors 75-90 Amperes 250-500 Volts
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OCR Scan
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T-33-15
D60T/D62T_
Amperes/250-500
D60T/D
00DSb74
D60T2575
D60T2590
1S697
D60T307510
D62T
D62T307510
FC75A
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MMFT6661T1
Abstract: sot-223 body marking D K Q F
Text: MOTOROLA Order this document by MMFT6661T1/D SEMICONDUCTOR TECHNICAL DATA MMFT6661T1 Medium Power Field Effect Hransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 500 mA 90 VOLTS
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OCR Scan
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MMFT6661T1/D
OT-223
MMFT6661T1
MMFT6661T1
sot-223 body marking D K Q F
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GE13080T
Abstract: GE13081T GIE13080T GIE13081T SS510
Text: U ic u CDFPn NPN POWER TRANSISTORS GE13080T GE13081T 400-450 VOLTS 8 AMP, 90 WATTS The GE13080T and GE13081T transistors are designed for high-voltage, high-speed power switching in inductive cir cuits where fall time is critical. They are particularly suited for
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GE13080T
GE13081T
GE13081T
GE13080T
GIE13080T
GIE13081T
SS510
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HEP transistors
Abstract: 2n6576 2N6578
Text: File Number 2N6576, 2N6577, 2N6578 1152 15-Ampere N-P-N Darlington Power Transistors 60, 90, 120 Volts, 120 Watts Gain of 2000 at 4 A TERM INAL DESIGNATIONS Features: c • Operates from 1C without predriver ■ Low leakage at high temperature Applications:
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2N6576,
2N6577,
2N6578
15-Ampere
2751ft
2N6578
HEP transistors
2n6576
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8P2M
Abstract: 1038A 8p4m
Text: T H I\ KllSTU'KiS •U C « « * V i* 8P2M,8P4M 8 A(12 Ar m s. THYRISTOR The 8P2M and 8P4M are P gate all diffused mold type Thyristor granted PACKAGE DIMENSIONS 8 Am p On-state Average Current (Tc = 90 °C), with voltages up to 400 in millimeters volts.
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OCR Scan
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T0-220
SC-1038A
1988M
8P2M
1038A
8p4m
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2N6576
Abstract: 2N6576 equivalent
Text: File Number 1152 HARR IS S E M I C O N D S E CT OR 2N6576, 2N6577, 2N6578 5bE ]> • 43 D2 27 1 OD HG S^ l bS3 H H A S 15-Ampere N-P-N Darlington Power Transistors ~ F 3 3 'Z 9 60, 90, 120 Volts, 120 Watts Gain of 2000 at 4 A TERMINAL DESIGNATIONS Features:
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OCR Scan
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2N6576,
2N6577,
2N6578
15-Ampere
O-204AA
2N6578
2N6576
2N6576 equivalent
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125RGK
Abstract: No abstract text available
Text: NEC / ELECTRON DEVICE DATA SHEET “ / THYRISTORS . _ /_ 8P4J,8P4J-Z 8 A MOLD THYRISTOR DESCRIPTION The 8P4J and 8P4J-Z are P-gate ail diffu sed m old ty p e T H Y R IS T O R granted average on-state cu rre n t 8 Am ps Tc - 90 cC , w ith rated voltages up to 4 0 0 Volts.
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