Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP4563AGH-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement N-CH BV DSS 40V Fast Switching Performance RDS ON 20mΩ RoHS-compliant, halogen-free ID BVDSS RDS(ON) ID 9.6A -40V 36mΩ
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AP4563AGH-HF-3
O-252-4L
AP4563AGH-HF-3
O-252
AP4563A
4563AGH
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PDF
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EIA-541
Abstract: IRF7101 MS-012AA
Text: PD - 95308 IRF7460PbF SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits
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Original
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IRF7460PbF
EIA-481
EIA-541.
EIA-541
IRF7101
MS-012AA
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PDF
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1610b
Abstract: U5505 IRFR5505 IRFU5505
Text: PD - 9.1610B IRFR/U5505 HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5505 Straight Lead (IRFU5505) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -55V RDS(on) = 0.11Ω G ID = -18A S Description
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Original
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1610B
IRFR/U5505
IRFR5505)
IRFU5505)
1610b
U5505
IRFR5505
IRFU5505
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PDF
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JANSR2N7490T3
Abstract: IRHY57234CMSE T0-257AA
Text: PD - 93823B IRHY57234CMSE JANSR2N7490T3 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/705 5 TECHNOLOGY Product Summary Part Number IRHY57234CMSE Radiation Level 100K Rads (Si) RDS(on) 0.41Ω I D QPL Part Number
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Original
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93823B
IRHY57234CMSE
JANSR2N7490T3
O-257AA)
MIL-PRF-19500/705
5M-1994.
O-257AA.
JANSR2N7490T3
IRHY57234CMSE
T0-257AA
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PDF
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IRF7459
Abstract: B13AB 4.5V TO 100V INPUT REGULATOR
Text: PD- 93885A IRF7459 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l VDSS RDS on max 20V 9.0mΩ l l 12A High Frequency Buck Converters for Computer Processor Power
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Original
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3885A
IRF7459
IRF7459
B13AB
4.5V TO 100V INPUT REGULATOR
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 93886C IRF7460 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l l l Ultra-Low Gate Impedance
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Original
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93886C
IRF7460
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PDF
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IRF7459
Abstract: IRF74 4.5V TO 100V INPUT REGULATOR
Text: PD- 93885B IRF7459 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l VDSS RDS on max 20V 9.0mΩ l l 12A High Frequency Buck Converters for Computer Processor Power
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Original
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93885B
IRF7459
IA-48
IRF7459
IRF74
4.5V TO 100V INPUT REGULATOR
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PDF
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4.5V TO 100V INPUT REGULATOR
Abstract: No abstract text available
Text: PD - 95459A IRF7459PbF SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l l VDSS RDS on max 20V 9.0mΩ l l 12A High Frequency Buck Converters for Computer Processor Power
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Original
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5459A
IRF7459PbF
EIA-481
EIA-541.
4.5V TO 100V INPUT REGULATOR
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PDF
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IRF7460
Abstract: No abstract text available
Text: PD - 93886D IRF7460 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l l l Ultra-Low Gate Impedance
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Original
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93886D
IRF7460
IA-48
IRF7460
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PDF
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IRF7460
Abstract: No abstract text available
Text: PD - 93886B IRF7460 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectifica tion for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits l Ultra-Low Gate Impedance
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Original
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93886B
IRF7460
Drai252-7105
IRF7460
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-93823C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY57234CMSE 250V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number IRHY57234CMSE Radiation Level 100K Rads (Si) RDS(on) 0.41Ω ID 9.6A International Rectifier’s R5 TM technology provides
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Original
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PD-93823C
O-257AA)
IRHY57234CMSE
5M-1994.
O-257AA.
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PDF
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96078
Abstract: EIA-541 4.5V TO 100V INPUT REGULATOR
Text: PD - 96078A SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l l IRF7459UPbF VDSS RDS on max 20V 9.0mΩ l l 12A High Frequency Buck Converters for Computer Processor Power
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Original
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6078A
IRF7459UPbF
EIA-481
EIA-541.
96078
EIA-541
4.5V TO 100V INPUT REGULATOR
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PDF
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1610b
Abstract: IRFR5505 U5505 IRFU5505 fu120
Text: PD - 9.1610B IRFR/U5505 HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5505 Straight Lead (IRFU5505) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -55V RDS(on) = 0.11Ω G ID = -18A S Description
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Original
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1610B
IRFR/U5505
IRFR5505)
IRFU5505)
1610b
IRFR5505
U5505
IRFU5505
fu120
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PDF
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FDMC8878
Abstract: No abstract text available
Text: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14mΩ Features tm General Description Max rDS on = 14mΩ at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management
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FDMC8878
FDMC8878
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PDF
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FDMC8878
Abstract: No abstract text available
Text: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14mΩ Features tm General Description Max rDS on = 14mΩ at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management
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Original
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FDMC8878
FDMC8878
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PDF
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Untitled
Abstract: No abstract text available
Text: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14m: Features General Description Max rDS on = 14m: at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management
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Original
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FDMC8878
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PDF
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FDMC8878/MAX498CWI-T-datasheet
Abstract: No abstract text available
Text: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14m: Features General Description Max rDS on = 14m: at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of advanced Power Trench Fairchild Semiconductor‘s process. It has been optimized for power management
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Original
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FDMC8878
FDMC8878/MAX498CWI-T-datasheet
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PDF
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Untitled
Abstract: No abstract text available
Text: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14m: Features tm General Description Max rDS on = 14m: at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced Power Trench process. It has been optimized for power management
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Original
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FDMC8878
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 97093 IRF6621PbF IRF6621TRPbF DirectFET Power MOSFET Typical values unless otherwise specified RoHS Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses
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IRF6621PbF
IRF6621TRPbF
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 97005A IRF6621 DirectFET Power MOSFET Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching
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7005A
IRF6621
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94365A IRF6604 HEXFET Power MOSFET l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile <0.7 mm l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
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4365A
IRF6604
IRF6604
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PDF
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irf6621
Abstract: IRF6621TR1PBF IRF6621TRPBF
Text: PD - 97093 IRF6621PbF IRF6621TRPbF DirectFET Power MOSFET Typical values unless otherwise specified RoHS Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses
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Original
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IRF6621PbF
IRF6621TRPbF
irf6621
IRF6621TR1PBF
IRF6621TRPBF
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PDF
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Untitled
Abstract: No abstract text available
Text: 4302271 0053332 4 3Ö • HAS BUZ45 33 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1 9 9 1 Package Features TO-204AA BOTTOM VIEW • 9.6A, 50 0V • rDS on = °-6 n _ SOURCE • S O A is P o w e r- D is s ip a tio n Lim ited
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OCR Scan
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BUZ45
O-204AA
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PDF
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IRFU
Abstract: IRFU 310
Text: P D - 9 1610A International IO R Rectifier IRFR/U5505 PRELIM INARY HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Surface Mount IRFR 5505 Straight Lead (IRFU 5505) Advanced Process Technology Fast Switching Fully Avalanche Rated V d s s = -5 5 V
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OCR Scan
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IRFR/U5505
EIA-481
IRFU
IRFU 310
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PDF
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