dot matrix printer circuit diagram datasheet
Abstract: HA13408 dot matrix printer Hitachi DSA00231 HA-13408 hitachi feeder
Text: HA13408 9-Channel Power Driver ADE-207-206 Z 1st Edition July 1996 Description The HA13408 9-channel power driver IC is designed to drive dot matrix printer head. This IC can drive 9 pins without using any external components. HA13408 can be used for 2 system four-phase step drive, as
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HA13408
ADE-207-206
HA13408
dot matrix printer circuit diagram datasheet
dot matrix printer
Hitachi DSA00231
HA-13408
hitachi feeder
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ET840
Abstract: No abstract text available
Text: ET840 9 Amps, ,500Volts N-Channel MOSFET • Description The ET840 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
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ET840
Amps500Volts
ET840
O-220
O-220F
O220F
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88W51
Abstract: ET630
Text: ET630 9 Amps, 200Volts N-CHANNEL MOSFET • DESCRIPTION The ET630 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
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ET630
200Volts
ET630
00A/s
Width300s
88W51
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dmx512
Abstract: Milford Instruments DMX RGB flashing led pwm rgb led driver dmx signal DMX led driver 1-574RCD LS25 rgb led common anode 9-channel power driver
Text: MILFORD INSTRUMENTS Limited Rev 1.0 03/10/2008 DMX- 9 Channel LED Driver Board, Part # 1-574 The DMX- 9 Channel LED driver board allows up to 9 LED Arrays or 3 RGB Strips to be driven and controlled directly from a DMX512 network. The standard 1-574 board uses power mosfets in open collector mode for the PWM outputs.
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DMX512
1-574RCD
W132mm
D126mm
H32MM.
Milford Instruments DMX
RGB flashing led
pwm rgb led driver
dmx signal
DMX led driver
LS25
rgb led common anode
9-channel power driver
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UTC UF630L
Abstract: UF630L-TN3-R uf630 power mosfet TO-252 MOSFET p channel UF630 UF630L-TA3-T UF630-TA3-T UF630-TF3-T
Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 9 Amps, 200 Volts N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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UF630
UF630L
UF630-TA3-T
UF630L-TA3-T
QW-R502-049
UTC UF630L
UF630L-TN3-R
uf630 power mosfet
TO-252 MOSFET p channel
UF630
UF630L-TA3-T
UF630-TA3-T
UF630-TF3-T
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UF630L-TN3-R
Abstract: UF630 UF630L-TA3-T UF630-TA3-T UF630-TF3-T
Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 9 Amps, 200 Volts N-CHANNEL POWER MOSFET 1 TO - 252 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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UF630
O-220
O-220F
UF630-TA3-T
UF630L-TA3-T
QW-R502-049
UF630L-TN3-R
UF630
UF630-TA3-T
UF630-TF3-T
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UF630L-TN3-R
Abstract: uf630 power mosfet UF630 UF630L-TA3-T
Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 9 Amps, 200 Volts N-CHANNEL POWER MOSFET 1 TO - 252 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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UF630
O-220
O-220F
UF630L-TA3-T
UF630G-TA3-Tt
QW-R502-049
UF630L-TN3-R
uf630 power mosfet
UF630
UF630L-TA3-T
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Untitled
Abstract: No abstract text available
Text: MAX5112 9-Channel, 14-Bit, Current DAC with I2C Interface General Description Features The MAX5112 is a 14-bit, 9-channel, current-output digital-to-analog converter DAC . The device operates from a low +3.0V power supply and provides 14-bit performance without any adjustment.
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MAX5112
14-Bit,
MAX5112
14-bit
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Untitled
Abstract: No abstract text available
Text: SO T8 9 BSS87 200 V, N-channel vertical D-MOS transistor 9 December 2014 Product data sheet 1. General description N-channel enhancement mode vertical Double-Diffused Field-Effect Transistor DMOSFET in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device
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BSS87
SC-62)
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TB62781
Abstract: tb6278
Text: TB62781FNG TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB62781FNG 9-Channel Constant-Current LED Driver of the 3.3V and 5V Power Supply Voltage Operation 1. Features • Power supply voltages: VCC = 3.3 V/5 V • Output drive capability and output count: 80 mA max x 9 channels
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TB62781FNG
TB62781
tb6278
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TB62781
Abstract: No abstract text available
Text: TB62781FNG TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB62781FNG 9-Channel Constant-Current LED Driver of the 3.3V and 5V Power Supply Voltage Operation 1. Features • Power supply voltages: VCC = 3.3 V/5 V • Output drive capability and output count: 80 mA max x 9 channels
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TB62781FNG
TB62781
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TQFP-64-EP
Abstract: No abstract text available
Text: iW7032 32-Channel LED Driver for LCD Panel Backlighting 2.0 Description 1.0 Features ● Fully integrated power FET with minimum external components ● Proprietary digital power management and patented adaptive switch mode LED driver ● 32-channel output each at 56 V with 9 V to 28 V input
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iW7032
32-Channel
TQFP-64-EP
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Untitled
Abstract: No abstract text available
Text: iW7022 16-Channel LED Driver for LCD Panel Backlighting 1.0 Features 2.0 Description ● Fully integrated power FET with minimum external components ● Proprietary digital power management and patented adaptive switch mode LED driver ● 16-channel output each at 60 V with 9 V to 28 V input
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iW7022
16-Channel
iW7022
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CHM1503YJGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel Q1: VOLTAGE 30 Volts N-channel Q2: VOLTAGE 30 Volts CHM1503YJGP CURRENT 8 Ampere CURRENT 9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers.
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CHM1503YJGP
CHM1503YJGP
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block diagram of dot matrix printer
Abstract: ha13408 SP-23TA VI-08 HA-13408
Text: HA13408 9-Channel Power Driver Description HA 13408 The H A 13408 9-channel pow er driver IC is designed lo drive dot matrix printer head. This IC can drive 9 pins w ithout using any external components. HA 13408 can be used for 2 system four-phase step drive, as every channel is used
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HA13408
SP-23TA)
SP-23TA
block diagram of dot matrix printer
SP-23TA
VI-08
HA-13408
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block diagram of dot matrix printer
Abstract: DOT MATRIX PRINTER HA-13408 dot matrix printer circuit diagram HA13408 printer head Hitachi Scans-001 dot matrix printer head VI-08
Text: HA13408 9-Channel Power Driver Description HA13408 The H A 13408 9-channel pow er driver IC is designed to drive dot matrix printer head. This IC can drive 9 pins w ithout using any external components. HA 13408 can be used for 2 system four-phase step drive, as every channel is used
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HA13408
HA13408
HAD408
SP-23TA)
block diagram of dot matrix printer
DOT MATRIX PRINTER
HA-13408
dot matrix printer circuit diagram
printer head
Hitachi Scans-001
dot matrix printer head
VI-08
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FD3055
Abstract: Fp3055
Text: interrii RFD3055, RFD3055SM, RFP3055 D a ta S h e e t 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power J u ly 1 9 9 9 F ile N u m b e r 3648.2 Features •
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RFD3055,
RFD3055SM,
RFP3055
TA49082.
AN7260.
FD3055
Fp3055
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Untitled
Abstract: No abstract text available
Text: in te rrii RFG60P03, RFP60P03, RF1S60P03SM D a la S h e e t J u ly 1 9 9 9 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs F ile N u m b e r 3 9 5 1 .3 Features • 60A, 30V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
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RFG60P03,
RFP60P03,
RF1S60P03SM
TA49045.
RF1S60P03SM
AN7254
AN7260.
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8A60V
Abstract: rfp8p06e
Text: RFD8P06E, RFD8P06ESM, RFP8P06E integri I D a ta S h e e t J u ly 1 9 9 9 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs F ile N u m b e r 3 9 3 7 .5 Features • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature
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RFD8P06E,
RFD8P06ESM,
RFP8P06E
RFD8P06ESM
RFP8P06E
AN7254
8A60V
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2SK1059
Abstract: 2SK1059-Z 2SK1059Z 2SK105 ScansUX881
Text: '* f * .i f N-CHANNEL MOS FIELD EFFECT POWER TRANSISTORS 2 S K 1 0 5 9 , 2 S K 1 0 5 9 -Z DESCRIPTION The 2SK1059, 2SK1059-Z are N-Channel MOS Field Effect Power Transistor designed for solenoid, motor and lamp driver. FEATURES • 4 V Gate Drive — Logic level —
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2SK1059,
2SK1059-Z
2SK1059-Z
1989M
2SK1059
2SK1059Z
2SK105
ScansUX881
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TA09532
Abstract: No abstract text available
Text: interrii " RFP2N20L I D atei S h e e t J u ly 1 9 9 9 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET F ile N u m b e r Features • 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use
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RFP2N20L
TA09532.
AN7254
AN7260
TA09532
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Untitled
Abstract: No abstract text available
Text: mtefsil RFG30P05, RFP30P05, RF1S30P05SM D a ta S h e e t J u ly 1 9 9 9 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs 243 $.4 Features • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives
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RFG30P05,
RFP30P05,
RF1S30P05SM
TA09834.
RFG30P0S,
RF1S30P05SM
AN7260.
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RFPS0N06
Abstract: TA49018 RFP50N06
Text: RFG50N06, RFP50N06, RF1S50N06SM in te ik il D a ta S h e e t J u ly 1 9 9 9 50A, BOV, 0.022 Ohm, N-Channel Power MOSFETs F ile N u m b e r 3 5 7 5 .4 Features • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
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RFG50N06,
RFP50N06,
RF1S50N06SM
TA49018.
AN7254
AN7260.
RFPS0N06
TA49018
RFP50N06
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Untitled
Abstract: No abstract text available
Text: 4AM15 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance N Channel: RDSu,n < 0 .5 £1, V os = 10 V, ID = 2 A P Channel: RDS on) < 0 .9 Vas = - 1 0 V, ID = - 2 A • Low drive current
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4AM15
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