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    9-CHANNEL POWER DRIVER Search Results

    9-CHANNEL POWER DRIVER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67B001BFTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square Wave Visit Toshiba Electronic Devices & Storage Corporation
    TC78B011FTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=30/Square, Sine Wave Visit Toshiba Electronic Devices & Storage Corporation
    TB67B001AFTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square Wave Visit Toshiba Electronic Devices & Storage Corporation
    TB67H451AFNG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=3.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67H450AFNG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=3.5 Visit Toshiba Electronic Devices & Storage Corporation

    9-CHANNEL POWER DRIVER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    dot matrix printer circuit diagram datasheet

    Abstract: HA13408 dot matrix printer Hitachi DSA00231 HA-13408 hitachi feeder
    Text: HA13408 9-Channel Power Driver ADE-207-206 Z 1st Edition July 1996 Description The HA13408 9-channel power driver IC is designed to drive dot matrix printer head. This IC can drive 9 pins without using any external components. HA13408 can be used for 2 system four-phase step drive, as


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    PDF HA13408 ADE-207-206 HA13408 dot matrix printer circuit diagram datasheet dot matrix printer Hitachi DSA00231 HA-13408 hitachi feeder

    ET840

    Abstract: No abstract text available
    Text: ET840 9 Amps, ,500Volts N-Channel MOSFET • Description The ET840 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.


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    PDF ET840 Amps500Volts ET840 O-220 O-220F O220F

    88W51

    Abstract: ET630
    Text: ET630 9 Amps, 200Volts N-CHANNEL MOSFET • DESCRIPTION The ET630 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.


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    PDF ET630 200Volts ET630 00A/s Width300s 88W51

    dmx512

    Abstract: Milford Instruments DMX RGB flashing led pwm rgb led driver dmx signal DMX led driver 1-574RCD LS25 rgb led common anode 9-channel power driver
    Text: MILFORD INSTRUMENTS Limited Rev 1.0 03/10/2008 DMX- 9 Channel LED Driver Board, Part # 1-574 The DMX- 9 Channel LED driver board allows up to 9 LED Arrays or 3 RGB Strips to be driven and controlled directly from a DMX512 network. The standard 1-574 board uses power mosfets in open collector mode for the PWM outputs.


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    PDF DMX512 1-574RCD W132mm D126mm H32MM. Milford Instruments DMX RGB flashing led pwm rgb led driver dmx signal DMX led driver LS25 rgb led common anode 9-channel power driver

    UTC UF630L

    Abstract: UF630L-TN3-R uf630 power mosfet TO-252 MOSFET p channel UF630 UF630L-TA3-T UF630-TA3-T UF630-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 9 Amps, 200 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


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    PDF UF630 UF630L UF630-TA3-T UF630L-TA3-T QW-R502-049 UTC UF630L UF630L-TN3-R uf630 power mosfet TO-252 MOSFET p channel UF630 UF630L-TA3-T UF630-TA3-T UF630-TF3-T

    UF630L-TN3-R

    Abstract: UF630 UF630L-TA3-T UF630-TA3-T UF630-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 9 Amps, 200 Volts N-CHANNEL POWER MOSFET 1 TO - 252 „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


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    PDF UF630 O-220 O-220F UF630-TA3-T UF630L-TA3-T QW-R502-049 UF630L-TN3-R UF630 UF630-TA3-T UF630-TF3-T

    UF630L-TN3-R

    Abstract: uf630 power mosfet UF630 UF630L-TA3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 9 Amps, 200 Volts N-CHANNEL POWER MOSFET 1 TO - 252 „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


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    PDF UF630 O-220 O-220F UF630L-TA3-T UF630G-TA3-Tt QW-R502-049 UF630L-TN3-R uf630 power mosfet UF630 UF630L-TA3-T

    Untitled

    Abstract: No abstract text available
    Text: MAX5112 9-Channel, 14-Bit, Current DAC with I2C Interface General Description Features The MAX5112 is a 14-bit, 9-channel, current-output digital-to-analog converter DAC . The device operates from a low +3.0V power supply and provides 14-bit performance without any adjustment.


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    PDF MAX5112 14-Bit, MAX5112 14-bit

    Untitled

    Abstract: No abstract text available
    Text: SO T8 9 BSS87 200 V, N-channel vertical D-MOS transistor 9 December 2014 Product data sheet 1. General description N-channel enhancement mode vertical Double-Diffused Field-Effect Transistor DMOSFET in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device


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    PDF BSS87 SC-62)

    TB62781

    Abstract: tb6278
    Text: TB62781FNG TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB62781FNG 9-Channel Constant-Current LED Driver of the 3.3V and 5V Power Supply Voltage Operation 1. Features • Power supply voltages: VCC = 3.3 V/5 V • Output drive capability and output count: 80 mA max x 9 channels


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    PDF TB62781FNG TB62781 tb6278

    TB62781

    Abstract: No abstract text available
    Text: TB62781FNG TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB62781FNG 9-Channel Constant-Current LED Driver of the 3.3V and 5V Power Supply Voltage Operation 1. Features • Power supply voltages: VCC = 3.3 V/5 V • Output drive capability and output count: 80 mA max x 9 channels


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    PDF TB62781FNG TB62781

    TQFP-64-EP

    Abstract: No abstract text available
    Text: iW7032 32-Channel LED Driver for LCD Panel Backlighting 2.0 Description 1.0 Features ● Fully integrated power FET with minimum external components ● Proprietary digital power management and patented adaptive switch mode LED driver ● 32-channel output each at 56 V with 9 V to 28 V input


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    PDF iW7032 32-Channel TQFP-64-EP

    Untitled

    Abstract: No abstract text available
    Text: iW7022 16-Channel LED Driver for LCD Panel Backlighting 1.0 Features 2.0 Description ● Fully integrated power FET with minimum external components ● Proprietary digital power management and patented adaptive switch mode LED driver ● 16-channel output each at 60 V with 9 V to 28 V input


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    PDF iW7022 16-Channel iW7022

    CHM1503YJGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel Q1: VOLTAGE 30 Volts N-channel Q2: VOLTAGE 30 Volts CHM1503YJGP CURRENT 8 Ampere CURRENT 9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers.


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    PDF CHM1503YJGP CHM1503YJGP

    block diagram of dot matrix printer

    Abstract: ha13408 SP-23TA VI-08 HA-13408
    Text: HA13408 9-Channel Power Driver Description HA 13408 The H A 13408 9-channel pow er driver IC is designed lo drive dot matrix printer head. This IC can drive 9 pins w ithout using any external components. HA 13408 can be used for 2 system four-phase step drive, as every channel is used


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    PDF HA13408 SP-23TA) SP-23TA block diagram of dot matrix printer SP-23TA VI-08 HA-13408

    block diagram of dot matrix printer

    Abstract: DOT MATRIX PRINTER HA-13408 dot matrix printer circuit diagram HA13408 printer head Hitachi Scans-001 dot matrix printer head VI-08
    Text: HA13408 9-Channel Power Driver Description HA13408 The H A 13408 9-channel pow er driver IC is designed to drive dot matrix printer head. This IC can drive 9 pins w ithout using any external components. HA 13408 can be used for 2 system four-phase step drive, as every channel is used


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    PDF HA13408 HA13408 HAD408 SP-23TA) block diagram of dot matrix printer DOT MATRIX PRINTER HA-13408 dot matrix printer circuit diagram printer head Hitachi Scans-001 dot matrix printer head VI-08

    FD3055

    Abstract: Fp3055
    Text: interrii RFD3055, RFD3055SM, RFP3055 D a ta S h e e t 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power J u ly 1 9 9 9 F ile N u m b e r 3648.2 Features •


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    PDF RFD3055, RFD3055SM, RFP3055 TA49082. AN7260. FD3055 Fp3055

    Untitled

    Abstract: No abstract text available
    Text: in te rrii RFG60P03, RFP60P03, RF1S60P03SM D a la S h e e t J u ly 1 9 9 9 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs F ile N u m b e r 3 9 5 1 .3 Features • 60A, 30V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


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    PDF RFG60P03, RFP60P03, RF1S60P03SM TA49045. RF1S60P03SM AN7254 AN7260.

    8A60V

    Abstract: rfp8p06e
    Text: RFD8P06E, RFD8P06ESM, RFP8P06E integri I D a ta S h e e t J u ly 1 9 9 9 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs F ile N u m b e r 3 9 3 7 .5 Features • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


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    PDF RFD8P06E, RFD8P06ESM, RFP8P06E RFD8P06ESM RFP8P06E AN7254 8A60V

    2SK1059

    Abstract: 2SK1059-Z 2SK1059Z 2SK105 ScansUX881
    Text: '* f * .i f N-CHANNEL MOS FIELD EFFECT POWER TRANSISTORS 2 S K 1 0 5 9 , 2 S K 1 0 5 9 -Z DESCRIPTION The 2SK1059, 2SK1059-Z are N-Channel MOS Field Effect Power Transistor designed for solenoid, motor and lamp driver. FEATURES • 4 V Gate Drive — Logic level —


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    PDF 2SK1059, 2SK1059-Z 2SK1059-Z 1989M 2SK1059 2SK1059Z 2SK105 ScansUX881

    TA09532

    Abstract: No abstract text available
    Text: interrii " RFP2N20L I D atei S h e e t J u ly 1 9 9 9 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET F ile N u m b e r Features • 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use


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    PDF RFP2N20L TA09532. AN7254 AN7260 TA09532

    Untitled

    Abstract: No abstract text available
    Text: mtefsil RFG30P05, RFP30P05, RF1S30P05SM D a ta S h e e t J u ly 1 9 9 9 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs 243 $.4 Features • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives


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    PDF RFG30P05, RFP30P05, RF1S30P05SM TA09834. RFG30P0S, RF1S30P05SM AN7260.

    RFPS0N06

    Abstract: TA49018 RFP50N06
    Text: RFG50N06, RFP50N06, RF1S50N06SM in te ik il D a ta S h e e t J u ly 1 9 9 9 50A, BOV, 0.022 Ohm, N-Channel Power MOSFETs F ile N u m b e r 3 5 7 5 .4 Features • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


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    PDF RFG50N06, RFP50N06, RF1S50N06SM TA49018. AN7254 AN7260. RFPS0N06 TA49018 RFP50N06

    Untitled

    Abstract: No abstract text available
    Text: 4AM15 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance N Channel: RDSu,n < 0 .5 £1, V os = 10 V, ID = 2 A P Channel: RDS on) < 0 .9 Vas = - 1 0 V, ID = - 2 A • Low drive current


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    PDF 4AM15