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    8W RF POWER TRANSISTOR NPN Search Results

    8W RF POWER TRANSISTOR NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    8W RF POWER TRANSISTOR NPN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PH2226-50M Radar Pulsed Power Transistor 50W, 2.2-2.6GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 20 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation


    Original     		PH2226-50M PDF

    PH2226-50M

    Abstract: 8w RF POWER TRANSISTOR NPN
    Text: PH2226-50M Radar Pulsed Power Transistor 50W, 2.2-2.6GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 20 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation


    Original     		PH2226-50M PH2226-50M 8w RF POWER TRANSISTOR NPN PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF247/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF247 . . . designed for 12.5 Volt VHF large–signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.


    Original     		MRF247/D MRF247 MRF247/D* PDF

    8-32NC-3A

    Abstract: NTE337 8-32-NC-3A 8w RF POWER TRANSISTOR NPN
    Text: NTE337 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE337 is a silicon NPN transistor in a T72H type package designed primarily for use in large– signal amplifier driver and pre–driver stages. This device is intended for use in industrial communications equipment operating at frequencies to 80MHz.


    Original     		NTE337 NTE337 80MHz. 50MHz 36erwise 50MHz 800mW, 8-32NC-3A 8-32-NC-3A 8w RF POWER TRANSISTOR NPN PDF

    transistor MRF317

    Abstract: atc 1117 case 316-01 RF POWER TRANSISTOR NPN mrf317 8w RF POWER TRANSISTOR NPN vk200 J102 MRF317 1117 atc
    Text: Order this document by MRF317/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF317 . . . designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc


    Original     		MRF317/D MRF317 Carrier/120 transistor MRF317 atc 1117 case 316-01 RF POWER TRANSISTOR NPN mrf317 8w RF POWER TRANSISTOR NPN vk200 J102 MRF317 1117 atc PDF

    MRF-393

    Abstract: 8w RF POWER TRANSISTOR NPN
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF393 . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 500 MHz Characteristics —


    Original     		MRF393 MRF393 MRF-393 8w RF POWER TRANSISTOR NPN PDF

    amplifier mrf247

    Abstract: MRF247 Capacitance j107 j113 equivalent mica capacitor Diode Motorola 316 mica trimmers capacitors
    Text: MOTOROLA Order this document by MRF247/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF247 The MRF247 is designed for 12.5 Volt VHF large–signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.


    Original     		MRF247/D MRF247 MRF247 amplifier mrf247 Capacitance j107 j113 equivalent mica capacitor Diode Motorola 316 mica trimmers capacitors PDF

    MRF247

    Abstract: MOTOROLA 381 equivalent vk 200 amplifier mrf247
    Text: MOTOROLA Order this document by MRF247/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF247 The MRF247 is designed for 12.5 Volt VHF large–signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.


    Original     		MRF247/D MRF247 MRF247 MRF247/D MOTOROLA 381 equivalent vk 200 amplifier mrf247 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF317/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF317 . . . designed primarily for wideband large–signal output amplifier stages in 30 – 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc


    Original     		MRF317/D MRF317 Carrier/120 MRF317/D* PDF

    100 watt fm transmitter

    Abstract: 1 transistor fm transmitter 5 watt
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF898 . . . designed for 24 Volt UHF large–signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of 850 – 960 MHz.


    Original     		MRF898 100 watt fm transmitter 1 transistor fm transmitter 5 watt PDF

    transistor MRF317

    Abstract: MRF317 mrf317 datasheet RF POWER TRANSISTOR NPN mrf317 J102 VK200 mrf317" "100 6W" motorola rf Power Transistor mrf317
    Text: MOTOROLA Order this document by MRF317/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF317 . . . designed primarily for wideband large–signal output amplifier stages in 30 – 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc


    Original     		MRF317/D MRF317 Carrier/120 MRF317/D* transistor MRF317 MRF317 mrf317 datasheet RF POWER TRANSISTOR NPN mrf317 J102 VK200 mrf317" "100 6W" motorola rf Power Transistor mrf317 PDF

    TRANSISTOR Z4

    Abstract: "100 6W" RF push pull power amplifier MRF393 Transistor z1 744A-01
    Text: Order this document by MRF393/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF393 . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 500 MHz Characteristics —


    Original     		MRF393/D MRF393 TRANSISTOR Z4 "100 6W" RF push pull power amplifier MRF393 Transistor z1 744A-01 PDF

    8w RF POWER TRANSISTOR NPN

    Abstract: MRF393
    Text: MOTOROLA Order this document by MRF393/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Push-Pull RF Power Transistor MRF393 . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 500 MHz Characteristics —


    Original     		MRF393/D MRF393 MRF393/D* 8w RF POWER TRANSISTOR NPN MRF393 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF393/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF393 . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range.


    Original     		MRF393/D MRF393 MRF393/D* PDF

    MRF844

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF844/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF844 . . . designed for 12.5 volt UHF large–signal, common–base amplifier applications in industrial and commercial FM equipment operating in the range of


    Original     		MRF844/D MRF844 MRF844/D* MRF844 PDF

    MRF898

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF898/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF898 Designed for 24 Volt UHF large–signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of


    Original     		MRF898/D MRF898 MRF898 PDF

    MRF898

    Abstract: epsilam 10 common base amplifier circuit designing 333a0
    Text: MOTOROLA Order this document by MRF898/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF898 . . . designed for 24 Volt UHF large–signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of


    Original     		MRF898/D MRF898 MRF898/D* MRF898 epsilam 10 common base amplifier circuit designing 333a0 PDF

    MRF898

    Abstract: 35 W 960 MHz RF POWER TRANSISTOR NPN transistor j37
    Text: MOTOROLA Order this document by MRF898/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF898 Designed for 24 Volt UHF large–signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of


    Original     		MRF898/D MRF898 MRF898 35 W 960 MHz RF POWER TRANSISTOR NPN transistor j37 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF898/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF898 Designed for 24 Volt UHF large–signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of


    Original     		MRF898/D MRF898 PDF

    Untitled

    Abstract: No abstract text available
    Text: PH1214-8M Radar Pulsed Power Transistor 8W, 1.2-1.4 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation


    Original     		PH1214-8M PDF

    8w RF POWER TRANSISTOR NPN

    Abstract: PH1214-8M
    Text: PH1214-8M Radar Pulsed Power Transistor 8W, 1.2-1.4 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation


    Original     		PH1214-8M 8w RF POWER TRANSISTOR NPN PH1214-8M PDF

    MRF340

    Abstract: AMO 0210 transistor s97
    Text: MOTOROLA SC XSTRS/R F MOTOROLA 4bE » b3b?aS4 • SEMICONDUCTOR ■■ OOTMS^ 3 ■ T -3 3 -0 5 TECHNICAL DATA MRF340 The RF Line 8W 100-150 MHz RF POWER TRANSISTO R NPN SILICON RF POWER TRANSISTOR N PN S IL IC O N . . .designed p rim arily for use in V H F am plifiers w ith amplitude


    OCR Scan     		MRF340 14bQ2 MRF340 AMO 0210 transistor s97 PDF

    MRF340

    Abstract: transistor D 2578 c 2579 power transistor MRF342 T5060 RF344 mrf34
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 8W 1 0 0 -1 5 0 MHz RF POWER TRANSISTOR NPN SILICO N RF POWER TRANSISTOR NPN S IL IC O N .d e s ig n e d p rim a rily fo r use in V H F m o d u la tio n and o th e r a m p lifie rs w ith a m p litu d e c o m m u n ic a tio n s e q u ip m e n t o p e ra tin g to


    OCR Scan     		RF344 MRF340 MRF340 transistor D 2578 c 2579 power transistor MRF342 T5060 mrf34 PDF

    linear amplifier 470-860

    Abstract: 8w RF POWER TRANSISTOR NPN npn UHF transistor TPV-595A linear amplifier 470-860 2 watt 3595 TPV-3595A
    Text: GAE GREAT AMERICAN ELECTROINCS TPV-595A Silicon NPN UHF transistor TPV-3595A is designed for Super Linear amplifier applications in different radio systems, commercial and industrial for TV re­ transmitters specifically . Output Power: Frequency Range: Voltage:


    OCR Scan     		TPV-595A TPV-3595A 25/lc linear amplifier 470-860 8w RF POWER TRANSISTOR NPN npn UHF transistor TPV-595A linear amplifier 470-860 2 watt 3595 PDF