marking code R56 SMD Transistor
Abstract: smd transistor p5s marking code R52 SMD Transistor
Text: User's Guide SLUU335A – December 2008 – Revised January 2010 bq78PL114 8S EVM The PowerLAN 8S Evaluation Module EVM is a complete evaluation system for the bq78PL114 Battery Management Controller and bq76PL102 Dual-Cell Li-Ion Battery Monitor integrated circuits
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SLUU335A
bq78PL114
bq76PL102
marking code R56 SMD Transistor
smd transistor p5s
marking code R52 SMD Transistor
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CuZn37F37
Abstract: No abstract text available
Text: Smart Power Relay E-1048-8S. Description The Smart Power Relay E-1048-8S is a remotely controllable electronic load disconnecting relay with two functions in a single unit: ● electronic relay ● electronic overcurrent protection A choice of current ratings is available from 1 A through 30 A. An
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E-1048-8S.
E-1048-8S
10-way)
CuZn37F37
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CuZn37F37
Abstract: 17-P10-Si cuzn CuZn37 din 46247 50035-G32 E-1048-8S Weidmuller
Text: Smart Power Relay E-1048-8S. Description The Smart Power Relay E-1048-8S. is a remotely controllable electronic load disconnecting relay with two functions in a single unit: ● electronic relay ● electronic overcurrent protection A choice of current ratings is available from 1 A through 30 A. An
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E-1048-8S.
SLIMLIN01/
CuZn37F37
17-P10-Si
cuzn
CuZn37
din 46247
50035-G32
E-1048-8S
Weidmuller
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HT18
Abstract: HT19 telephone hook off 1 line 2 phone switch
Text: Electronic Line Switch HT18/19 Application Note AN-H39 HT18 and HT19 for Electronic Line Switch by Scott Lynch, Senior Applications Engineer Introduction The Supertex HT18 and HT19 are electronic line switches packaged in SO-8s and are designed as replacements for the
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HT18/19
AN-H39
HT18/19.
HT18/19
140mA.
09/16/02rev
HT18
HT19
telephone hook off
1 line 2 phone switch
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SOLID STATE SWITCH
Abstract: AN-H39 1 line 2 phone switch
Text: HT18/19 Application Note AN-H39 HT18 and HT19 for Electronic Line Switch by Scott Lynch, Senior Applications Engineer Introduction The Supertex HT18 and HT19 are electronic line switches packaged in SO-8s and are designed as replacements for the typical mechanical hook switch in telephone instruments.
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HT18/19
AN-H39
HT18/19.
HT18/19
140mA.
HT18/HT19
140mA
353mW.
SOLID STATE SWITCH
AN-H39
1 line 2 phone switch
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20F001N
Abstract: SF1012 valor VALOR SF1012 YCL-20F001N 20f001n ycl diode T35 -4-D6 SF1012 valor ST7032 16PT-004S ycl 20f001n
Text: 5- &KLS%ULGJH • *OXHOHVVFRQQHFWLRQWRPRVW/$1 FKLSV • 8SWR0ESV6\QF:$1OLQN • 8SWRNESV$V\QF:$1OLQN ZLWKLQWHUQDOEDXGUDWHJHQHUDWRU • DGGUHVV/$1WDEOH • • • • • $785(6 • +LJKSHUIRUPDQFHVLQJOHFKLSIXOO
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RU873
XWRPDWLF73SRODULW\UHYHUVDO
SLQ34
PE-65723
16PT-004S
ST-7032
330pF
TXP-/C0100
ULGJH34
20F001N
SF1012 valor
VALOR SF1012
YCL-20F001N
20f001n ycl
diode T35 -4-D6
SF1012
valor ST7032
16PT-004S
ycl 20f001n
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Untitled
Abstract: No abstract text available
Text: New Product Si7655DN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0036 at VGS = - 10 V - 40e 0.0048 at VGS = - 4.5 V - 40e 0.0085 at VGS = - 2.5 V - 40e Qg (Typ.) 72 nC PowerPAK 1212-8S APPLICATIONS
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Si7655DN
1212-8S
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product Si7655DN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0036 at VGS = - 10 V - 40e 0.0048 at VGS = - 4.5 V - 40e 0.0085 at VGS = - 2.5 V - 40e Qg (Typ.) 72 nC PowerPAK 1212-8S APPLICATIONS
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Si7655DN
1212-8S
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SiSS27DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.0056 at VGS = - 10 V - 50e 0.0070 at VGS = - 6 V - 50e 0.0090 at VGS = - 4.5 V - 50e Qg (Typ.) 45 nC PowerPAK 1212-8S APPLICATIONS 3.3 mm
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SiSS27DN
1212-8S
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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si7655
Abstract: SI7655DN
Text: New Product Si7655DN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0036 at VGS = - 10 V - 40e 0.0048 at VGS = - 4.5 V - 40e 0.0085 at VGS = - 2.5 V - 40e Qg (Typ.) 72 nC PowerPAK 1212-8S APPLICATIONS
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Si7655DN
1212-8S
Si7655Dtrademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si7655
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Untitled
Abstract: No abstract text available
Text: SiSS27DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.0056 at VGS = - 10 V - 50e 0.0070 at VGS = - 6 V - 50e 0.0090 at VGS = - 4.5 V - 50e Qg (Typ.) 45 nC PowerPAK 1212-8S APPLICATIONS 3.3 mm
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SiSS27DN
1212-8S
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si7655ADN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0036 at VGS = - 10 V - 40e 0.0048 at VGS = - 4.5 V - 40e 0.0090 at VGS = - 2.5 V - 40e Qg (Typ.) 72 nC PowerPAK 1212-8S APPLICATIONS 3.3 mm
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Si7655ADN
1212-8S
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si7655ADN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0036 at VGS = - 10 V - 40e 0.0048 at VGS = - 4.5 V - 40e 0.0090 at VGS = - 2.5 V - 40e Qg (Typ.) 72 nC PowerPAK 1212-8S APPLICATIONS 3.3 mm
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Si7655ADN
1212-8S
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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TIA-492
Abstract: driver for 7 watt laser diode SFF-8341 TIA-492-AAA-C
Text: AFBR-708SMZ 10Gb Ethernet, 850 nm, SFP+ USR, 100m on OM3 MMF Transceiver Data Sheet MZ 8S -70 BR AF Description Features The Avago AFBR-708SMZ transceiver is part of a family of SFP+ products. This transceiver utilizes Avago’s 850nm VCSEL and PIN Detector technology to provide a transceiver to support 100m reach on OM3 MMF versus the
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AFBR-708SMZ
AFBR-708SMZ
850nm
10GBASE-SR
AV02-3398EN
TIA-492
driver for 7 watt laser diode
SFF-8341
TIA-492-AAA-C
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in5341B
Abstract: C 5388 IN5333B in5359b IN5340B in5359 IN5333 IN5341 in-5359-b 5377B
Text: SGS-THOMSON I0 8S I N 5333 B -> 1 N 5388 B ZENER DIODES • VOLTAGE RANGE : 3,3V TO 200V ■ HERMETICALLY SEALED PLASTIC CASE ■ HIGH SURGE CAPABILITY {up to 180W @ 8.3ms DESCRIPTIO N 5W silicon Zener diodes. ABSOLUTE RATINGS (limiting values) Symbol Parameter
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Untitled
Abstract: No abstract text available
Text: HT18/19 Application Note AN-H39 Supertexinc. HT18 and HT19 for Electronic Line Switch by Scott Lynch, Senior Applications Engineer Introduction The Supertex HT18 and HT19 are electronic line switches packaged in SO-8s and are designed as replacements for the
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HT18/19
AN-H39
HT18/19.
140mA.
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PDF
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Untitled
Abstract: No abstract text available
Text: BiMOS n 32-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS FOR -40°C TO +8S°C OPERATION Designed primarily for use with vacuum-fluorescent displays, the UCQ5818AF and UCQ5818EPF smart power BiMOS II drivers com bine CMOS shift registers, data latches, and control circuitry, with
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32-BIT
UCQ5818AF
UCQ5818EPF
5818EPF
00CH4D3
1U025Ã
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C0501
Abstract: No abstract text available
Text: ITO Dual Channel 8 Pin Transistor Output Hermetically Sealed Ceramic Optocoupler Isocom Ltd supplies high reliability devices or applications requiring an operating tempera ture range of -5 5 ° C to +125°C (e.g. mili tary applications . 8S 9000, together with CECC, BS9000 is a
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BS9000
BS5750/IS0900Q/EN29000.
C0501
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TPC8203 TENTATIVE TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSII TPC8203 LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS Low Drain-Source ON Resistance : RßS (ON)= l^m H (Typ.) High Forward Transfer Admittance: |Yfs| = 8S (Typ.)
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TPC8203
10//A
j--25Í
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IN5355
Abstract: IN5340 In 5352 IN5343 IN5359 IN5352 in5356 1n5377 1N5349 1N5346
Text: SGS-THOMSON I0 8S I N 5 3 3 3 B -> 1 N 5 3 8 8 B ZENER DIODES • VOLTAGE RANGE : 3,3V TO 200V ■ HERMETICALLY SEALED PLASTIC C A SE ■ HIGH S U R G E CAPABILITY {up to 180W @ 8.3ms DESCRIPTION 5W silicon Zener diodes. ABSOLUTE RATINGS (limiting values)
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klystron
Abstract: klystron s band s band klystron x band klystron valve electronic company marconi company marconi dimensions of a klystron AT350V
Text: K 300/JTJLY 1954 Klystron TypeK300 - 2-475 u 2-485 1-375 MAX. 2-8s" MAX. ÜÑ\ INTERNATIONAL OCTAL BASE. 1-30MAX. PIN No. COUPLER ADMIRALTY PATTERN A.R 54989. 1. BLANK 2 HEATER 3. BLANK 4. BLANK 5. RESONATOR 6. BLANK 7. HEATER & CATHC 8. CAP W EIGHT CONNECTIONS
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300/JULY
TypeK300
2849m.
/-20M
klystron
klystron s band
s band klystron
x band klystron
valve electronic company
marconi company
marconi
dimensions of a klystron
AT350V
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1mb60
Abstract: No abstract text available
Text: m 1-Pack IGBT m m 1MBIS00NP-060 IGBT MODULE N series '8SÏ Outline Drawing • Features Square R B SO A • Low Saturation Voltage • Less Total Pow er Dissipation • Improved FW D Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times Rated Current)
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600NP-060
D-60528
702708-Dallas,
DDDM57G
1mb60
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PDF
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DIN41814
Abstract: AEG A 518 sinus 069-C DIN41814 page 256
Text: 0029426 A E G CORP fil D E ^ O D H 'm H t. D O O S 'itT 5 | A 518 S 600 Typenreihe/Type range A 51 8S E lektrische Eigenschaften Electrical properties H öchstzulässige W erte Periodische VorwärtsU drm Spitzensperrspannung Periodische RückwärtsU rbm Spitzensperrspannung
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A518S
DIN41814â
153D4
DIN41814
AEG A 518
sinus
069-C
DIN41814 page 256
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Untitled
Abstract: No abstract text available
Text: FASCO INDS/ SENISYS 4 DE J> 34=1=1733 000155 b 3 SH SEN I ijjQ S I I CLD40 ru t* Silicon Planar Photodiode i DIMENSIONS ARE IN INCHES [M ILLIM ET ER S Features Absolute Maximum Ratings^1* Ta = 25°C unless otherwise stated.) • • • • • Storage +8S°C
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CLD40
Temperature11.
10mW/cma
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