Untitled
Abstract: No abstract text available
Text: 1253-8F Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage8.0k t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)2.0m @I(R) (A) (Test Condition)2.0m V(FM) Max.(V) Forward Voltage12
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1253-8F
Current100m
Time300n
Voltage12
Current50u
StyleDO-35
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Schottky Barrier Diodes
Abstract: torex torex, XBS013R1DR-G
Text: 8F Sakura Nihonbashi Bldg., 1-13-12, Nihonbashikayaba-cho, Chuo-ku, Tokyo 103-0025 Japan PRESS RELEASE TRX059 March 30, 2010 World’s Smallest Class 0603 Size Ultra-Small Schottky Barrier Diodes TOREX SEMICONDUCTOR LTD. Tokyo Japan: President, Tomoyuki Fujisaka has developed the world’s smallest
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TRX059
XBS013R1DR-G
USP-2B01
XBS013V1DR-G
USP-2B01
Schottky Barrier Diodes
torex
torex,
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Untitled
Abstract: No abstract text available
Text: NSS3541-8F Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current6.0 @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.75 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)1.0 @Temp. (øC) (Test Condition)25#
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NSS3541-8F
Voltage800
Current50u
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MIRA SDRAM
Abstract: No abstract text available
Text: 128Mb Synchronous DRAM Specification P2V28S30CTP P2V28S40CTP Deutron Electronics Corp. 8F, 68, Sec. 3, NanKing E. RD., Taipei 104, Taiwan, R.O.C. TEL: 886 -2-2517-7768 FAX: (886)-2-2517-4575 1 P2V28S30CTP/ P2V28S40CTP 128M Single Data Rate Synchronous DRAM
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128Mb
P2V28S30CTP
P2V28S40CTP
P2V28S30CTP/
P2V28S30CTP
304-word
P2V28S40CTP
152-word
16-bit.
MIRA SDRAM
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moc 3048
Abstract: GI 9528 bd 9528 ILI9328
Text: APPROVAL SHEET Product Name: ILI9328 Customer Product Name Customer : Date : 2009.04.21 Signature by : RD 2009.06.22 朱學群 ILI TECHNOLOGY CORP. 8F., No.38, Taiyuan St., Jhubei City, Hsinchu County Taiwan 302, R.O.C. Tel.886-3-5600099; Fax.886-3-5600055
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ILI9328
240RGBx320
ILI9328DS
moc 3048
GI 9528
bd 9528
ILI9328
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PDF
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1/diode gi 9528
Abstract: GI 9528
Text: ILI9328 a-Si TFT LCD Single Chip Driver 240RGBx320 Resolution and 262K color Datasheet Version: V0.15 Document No.: ILI9328DS_V0.15.pdf ILI TECHNOLOGY CORP. 8F, No.38, Taiyuan St., Jhubei City, Hsinchu County, Taiwan 302, R.O.C. Tel.886-3-5600099; Fax.886-3-5630525
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ILI9328
240RGBx320
ILI9328DS
1/diode gi 9528
GI 9528
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p2v64s40etp
Abstract: No abstract text available
Text: 64Mb Synchronous DRAM Specification P2V64S40ETP Deutron Electronics Corp. 8F, 68, SEC. 3, NANKING E. RD., TAIPEI 104, TAIWAN, R. O. C. TEL : 886-2-2517-7768 FAX : 886-2-2517-4575 http: // www.deutron.com.tw 64Mb Synchronous DRAM P2V64S40ETP 4-bank x 1,048,576-word x 16-bit
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P2V64S40ETP
576-word
16-bit)
P2V64S40ETP
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XBS013S15
Abstract: XBS013S16 XBS024S15 XBS053V13 XBS053V15 XBS104S13 XBS104S14 323a
Text: 8F Sakura Nihonbashi Bldg., 1-13-12, Nihonbashikayaba-cho, Chuo-ku, Tokyo 103-0025 Japan Tel: +81-3-5652-8700 Fax: +81-3-5652-8701 http://www.torex.co.jp/english/ PRESS RELEASE ＴＲＸ024 May 22, 2007 XBS Series Schottky Barrier Diodes Torex Semiconductor Ltd. Chuo-Ku, Tokyo : President, Tomoyuki Fujisaka announces the release of
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ap104S14
OD-123A
XBS013S15
XBS013S16
XBS024S15
XBS053V13
XBS053V15
XBS104S13
XBS104S14
323a
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PDF
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IRL640A
Abstract: No abstract text available
Text: IRL640A A dvanced Power MOSFET FEATURES BVdss = 200 V ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ^DS on = ♦ Rugged Gate Oxide Technology lD = 0.1 8f 2 18 A ♦ Lower Input Capacitance ♦ Improved Gate Charge TO-220 ♦ Extended Safe Operating Area
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IRL640A
IRL640A
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PDF
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IRL640
Abstract: No abstract text available
Text: IRL640 A dvanced Power MOSFET FEATURES BVdss = 200 V ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ^DS on = ♦ Rugged Gate Oxide Technology lD = 0.1 8f 2 18 A ♦ Lower Input Capacitance ♦ Improved Gate Charge TO-220 ♦ Extended Safe Operating Area
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IRL640
IRL640
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PDF
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Untitled
Abstract: No abstract text available
Text: Attenuator 100 to 2000 MHz Technical Data UTF-030 Features Description Pin Configuration • 40 dB Attenuation Range UTF-030, TO-8F • AGC Circuits The UTF-030 is a thin-film voltagecontrolled RF attenuator that offers a continuously-variable attenuation of up to 30 to 45 dB
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UTF-030
UTF-030,
UTF-030
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sp 2022
Abstract: XC6222
Text: 8F Sakura Nihonbashi Bldg., 1-13-12, Nihonbashikayaba-cho, Chuo-ku, Tokyo 103-0025 Japan PRESS RELEASE TRX052 August 18th, 2009 XC6222 Series 700mA High-Speed Transient Response LDO Regulator with Reverse Current Protection TOREX SEMICONDUCTOR LTD. Chuo-Ku, Tokyo: President, Tomoyuki Fujisaka announces a new 700mA High-Speed
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TRX052
XC6222
700mA
120mV
300mA)
700mA
sp 2022
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PDF
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TPD1018F
Abstract: No abstract text available
Text: TOSHIBA TPD1018F TOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS INTEGRATED CIRCUIT T P D 1 0 1 8F HIGH-SIDE POWER SWITCH for MOTORS, SOLENOIDS, and LAMP DRIVERS TPD1018F is a monolithic power IC for high-side switches. The IC has a vertical MOS FET output which can be
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TPD1018F
TPD1018F
SSOP10-P-225-1
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PDF
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UTF-015
Abstract: Avantek, Inc Avantek S
Text: AVANTEK I N C B 44E » QOOfllTfl ^ H A V A UTF-015 Attenuator 5 to 1000 MHz ^ M * IT E K FEATURES • <1.6:1 VSWR • 20 dB of Attenuation • Negative Control Voltage - APPLICATIONS • Open and Closed Loop Gain Compensation TO-8F, p. 16-47 DESCRIPTION
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UTF-015
50-ohm
Avantek, Inc
Avantek S
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PDF
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Catalog Sensors for Process Applications
Abstract: NCB1.5-8GM25-N0 5M
Text: FACTORY AUTOMATION CATALOG SENSORS FOR PROCESS APPLICATIONS 1FQQFSM 'VDIT°6OCFBUBCMFGPSRVBMJUZBOEDIPJDF 8F BSF B MFBEJOH NBOVGBDUVSFS PG JOEVTUSJBM TFOTPST BOE TFOTPS TZTUFNT
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199003130E
Catalog Sensors for Process Applications
NCB1.5-8GM25-N0 5M
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M604
Abstract: servo drive
Text: F U JI MUMËïïraiÊ 6-Pack IGBT 1200 V 8A 6MBI 8F-120 IGBT MODULE ( F series Outline Drawings • Features • Low Saturation Voltage • Voltage Drive • Variety of Power Capacity Series ■ Applications • Inverter for M otor Drive • AC and DC Servo Drive Am plifier
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8F-120
E82988
M604
servo drive
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PDF
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8f120
Abstract: dc servo M604 RG15 8F-120
Text: F U JI MUMËïïraiÊ 6-Pack IGBT 1200 V 8A 6MBI 8F-120 IGBT MODULE ( F series Outline Drawings • Features • Low Saturation Voltage • Voltage Drive • Variety of Power Capacity Series ■ Applications • Inverter for M otor Drive • AC and DC Servo Drive Am plifier
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8F-120
E82988
8f120
dc servo
M604
RG15
8F-120
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PDF
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Untitled
Abstract: No abstract text available
Text: Q U TF-015 A tte n u ato r 5 to 1000 M H z avantek FEATURES APPLICATIONS • < 1.6:1 VSWR • 20 dB of Attenuation • Negative Control Voltage • Open and Closed Loop Gain Compensation TO-8F, p. 16—47 DESCRIPTION voltage range. O n the average, the attenuation will change
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TF-015
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TPD1018F TOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS INTEGRATED CIRCUIT T P D 1 0 1 8F HIGH-SIDE POW ER SW ITCH for M O TO RS, SOLENOIDS, and LAM P DRIVERS TPD1018F is a m onolithic power IC for high-side switches. The IC has a vertical MOS FET output w hich can be
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OCR Scan
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TPD1018F
TPD1018F
SSOP10-P-225-1
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PDF
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utf-025
Abstract: No abstract text available
Text: Q UTF-025 Attenuator 5 to 2500 MHz avan tek FEATURES APPLICATIONS • 35 dB Attenuation Range • <1.5:1 VSWR • Open and Closed Loop Gain Compensation DESCRIPTION TO-8F, p. 16-47 The UTF-025 is a thin-film voltage controlled RF attenuator that offers a continuously-variable 17 to 33 dB from 5 to
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UTF-025
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UTF-025
Abstract: Avantek S 44et
Text: AVANTEK ^ A 4ME D I NC V A N T OQGfllflG 7 B A V A UTF-025 Attenuator 5 to 2500 MHz E K APPLICATIONS FEATURES • 35 dB Attenuation Range • <1,5:1 VSWR • Open and Closed Loop Gain Compensation DESCRIPTION TO-8F, p. 16-47 The UTF-025 Is a thin-fllm voltage controlled R F attenuator
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UTF-025
50-ohm
CA9S035
Avantek S
44et
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PDF
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Untitled
Abstract: No abstract text available
Text: BAS3010A. Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage typ. 0.41V @ 1 F = 1A • For high efficiency DC/DC conversion, fast switching, protection and clamping applications • Pb-free (RoHS compliant) package 1)
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BAS3010A.
010A-03W
BAS3010A-03W
OD323
50/60Hz,
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Untitled
Abstract: No abstract text available
Text: BAS3007A. Low VF Schottky Diode Array • Reverse voltage: 30 V • Forward current: 0.9 A • Small diode quad array for polarity independence, reverse polarity protection and low loss bridge rectification • Very low forward voltage: 0.5 V typ. @ 0.7 A per diode
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BAS3007A.
BAS3007A-RPP
OT143
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8F sot23
Abstract: No abstract text available
Text: BAT240. High Voltage Schottky Diode • Rectifier Schottky diode for telecommunication and industrial applications • High reverse voltage: 240 V • For power supply applications • For clamping and protection in high voltage applications • Pb-free RoHS compliant package 1)
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BAT240.
BAT240A
8F sot23
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