8EF MARKING Search Results

8EF MARKING Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MG8097/B		Rochester Electronics LLC	8097 - Math Coprocessor - Dual marked (8506301ZA)
5490/BCA		Rochester Electronics LLC	5490 - Decade Counter - Dual marked (M38510/01307BCA)
5405/BCA		Rochester Electronics LLC	5405 - Gate - Dual marked (M38510/00108BCA)
54AC20/SDA-R		Rochester Electronics LLC	54AC20/SDA-R - Dual marked (M38510R75003SDA)
UHD503R/883		Rochester Electronics LLC	UHD503R/883 - Dual marked (5962-8855101CA)

8EF MARKING Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
JLF-1382-uu9.8 Abstract: L1117DG-1.8 AS1084R-1.8 cbf 493 SC156515M-1.8 at2408n-10si-1.8 A414B AS2715T-1.8 AS2731T5-1.8 SMD1117-1.8 Text: "#$8 2929829 998B23A52CE8E8 12345627839A8B292CD478 D34D98 !32 278 1249ABCD8EFCF8888D8C C"E.8 12F8CABC 8F8F8FCE8 12!AC"8FD8#FF8CBF8$8AFD FDFE8 FCA%8&DE8EFD8F8FCF8ED	Original	PDF	98B23A52CE8 12345627839A8B292CD478 1249ABCD8EF 809DC P853458, 15841HI830278 48506813H870338 84H2028 8408F JLF-1382-uu9.8 L1117DG-1.8 AS1084R-1.8 cbf 493 SC156515M-1.8 at2408n-10si-1.8 A414B AS2715T-1.8 AS2731T5-1.8 SMD1117-1.8
Untitled Abstract: No abstract text available Text: PJP24N10 / PJF24N10 TO-220AB / ITO-220AB 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=24mΩ TO-220AB ITO-220AB • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current	Original	PDF	PJP24N10 PJF24N10 O-220AB ITO-220AB O-220AB 2002/95/EC ITO-220AB MIL-STD-750
Untitled Abstract: No abstract text available Text: PJB24N10 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=24mΩ • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Designed for AC Adapter, High-Frequency Switch	Original	PDF	PJB24N10 2002/95/EC O-263 MIL-STD-750 B24N10 O-263 800PCS/REEL 983A5F 2010-REV
Untitled Abstract: No abstract text available Text: PJN1N60D TO-92 600V N-Channel Enhancement Mode MOSFET FEATURES • 0.5A, 600V, RDS ON =15Ω@VGS=10V, ID=0.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS	Original	PDF	PJN1N60D 2002/95/EC MIL-STD-750 1N60D 700ppm, 1000ppm 100ppm.
Untitled Abstract: No abstract text available Text: PJ04N03D 25V N-Channel Enhancement Mode Field Effect Transistor TO-252 FEATURES • RDS ON ,VGS@10V,I DS@30A=4mΩ • RDS(ON),VGS@5.0V,I DS@24A=6mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers	Original	PDF	PJ04N03D O-252 2002/95/EC O-252 MIL-STD-750 04N03D 983A5F 2009-REV
Untitled Abstract: No abstract text available Text: DA6502.009 19 December 2012 MAS6502 Piezoresistive Sensor Signal Interface IC • Optimized for Piezoresistive Pressure Sensors • Very Low Power Consumption • Ratiometric 16 Bit ∆Σ ADC • Linearity 14 Bits • Internal Clock Oscillator • Serial Data Interface I2C1 Bus	Original	PDF	DA6502 MAS6502 MAS6502
TE 555-1 Abstract: mini project using ic 555 MPY008H marking b9d marking a007 mt4m OA95 p6-33 IC LM 555 pin detail TSX 27 Text: MIL-M-38510/500B 4 AUGUST 1986 SUPERSEDING- MIL-M-38510/500A 12 D e c e m b e r 1 9 8 4 [QUALIFICATION I ¡REQUIREMENTS I IREMOVED I MILITARY MICROCIRCUITS, DIGITAL, SPECIFICATION T T L , M U L T I PL I E R - A C C U M U L A T O R S / M U L T I PL I E R S	OCR Scan	PDF	MIL-M-38510/500B MIL-M-38510/500A MIL-M-38510. MIL-M-38510 TDC1008C1V TDC1009C1V TDC1010C1V MPY008HC2V MPY012HC1V TE 555-1 mini project using ic 555 MPY008H marking b9d marking a007 mt4m OA95 p6-33 IC LM 555 pin detail TSX 27