S4 6AA
Abstract: GE C6A transistor BC 575 GE 86A HDLC
Text: :8.1-88 =;>;3CDA7 ;>C7A=76;3C7 @?F7A A7<3G 8LIVWTLU Y fes HL>I8=>C< 86E67>A>IN x>A: *Dcowfhijfl Y j@2 9>:A:8IG>8 HIG:C<I= _7:IL:C 8D>A 6C9 8DCI68IH` Y fcjBB 8DCI68I <6E 6K6>A67A: x>A: *Dco.jefinfhf Y /D8@:IH 6K6>A67A: Y ,A6HI>8 H:6A:9 6C9 ;AJM EGDD;:9 INE:H 6K6>A67A:
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86E67
8DCI68IH`
8DCI68I
uDCI68I
sAADL67A:
S4 6AA
GE C6A
transistor BC 575
GE 86A
HDLC
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lg 86A
Abstract: S69B hcj 6a Q703 HCJ 6k a67ay HCJB
Text: 97-07,9 ^z,3bffjvbx_ <:=:2BC@6 9:89 ?>E6@ @6;2F 7KHVWTKU Y x><= H:CH>I>K:o ecgj2 Y |DL =:><=Io fjcl BB Y j@1 9>:A:8IG>8 HIG:C<I= ^7:IL:C 8D>A 6C9 8DCI68IH_ Y sG:E6<: 9>HI6C8:o feBB Y 1tueihjdekhfdelee Y +GD9J8I >C 688DG96C8: ID yus kehhjbf 6K6>A67A: Y .D8@:IH 6K6>A67A:
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8DCI68IH_
688DG96C8:
sDCI68I
96I6H=
8DCI68I
8IGD68DJHI
lg 86A
S69B
hcj 6a
Q703
HCJ 6k
a67ay
HCJB
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S69B
Abstract: 91AB A13A a67ay dh-bh
Text: 86./6 \z,3`ikv] ;9<91AB?5 8978 >=D5? ?5:1E 6JGTURJS Y |DL =:><=I deaf BB v>A: ~Damudfghdj Y kq HL>I8=>C< 86E67>A>IN Y h@1 9>:A:8IG>8 HIG:C<I= \7:IL:C 8D>A 6C9 8DCI68IH] Y sG:E6<: 9>HI6C8: pkBB v>A: ~Damdelfjd Y 26H= I><=I 6C9 ;AJM EGDD;:9 INE:H 6K6>A67A:
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86E67
8DCI68IH]
sDCI68I
s6E68
96I6H=
8DCI68I
S69B
91AB
A13A
a67ay
dh-bh
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GE C6A
Abstract: S4 6AA
Text: :8.1-88 =;>;3CDA7 ;>C7A=76;3C7 @?F7A A7<3G 8LIVWTLU Y fes HL>I8=>C< 86E67>A>IN x>A: *Dcowfhijfl Y j@2 9>:A:8IG>8 HIG:C<I= _7:IL:C 8D>A 6C9 8DCI68IH` Y fcjBB 8DCI68I <6E 6K6>A67A: x>A: *Dco.jefinfhf Y /D8@:IH 6K6>A67A: Y 36H= I><=I 6C9 ;AJM EGDD;:9 INE:H 6K6>A67A:
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86E67
8DCI68IH`
8DCI68I
uDCI68I
/I6C96G9o
GE C6A
S4 6AA
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GE C6A
Abstract: 438 j idc-8g 6EEA ad69a
Text: 97.07-.^{-4bffkwbf_ <:=:2BC@6 9:89 ?>E6@ @6;2F 7JGUVSJT X he r HL>I8=>C< 86E67>A>IN w>A: *Dcovfhijfl X i@2 9>:A:8IG>8 HIG:C<I= ^7:IL:C 8D>A 6C9 8DCI68IH_ X y:6KN AD69 JE ID ljee2r X tA6HH w >CHJA6I>DC 6K6>A67A: w>A: *Dco.jeehfemk X hBB 8DCI68I <6E 6K6>A67A:
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86E67
8DCI68IH_
8DCI68I
tDCI68I
rAADL67A:
GE C6A
438 j
idc-8g
6EEA
ad69a
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GE C6A
Abstract: 5A98 6B5 diode A67A
Text: :8.18-0 _{-4bffkwbh` =;>;3CDA7 :;9: @?F7A A7<3G 8KHVWTKU X he r HL>I8=>C< 86E67>A>IN X i@2 9>:A:8IG>8 HIG:C<I= _7:IL:C 8D>A 6C9 8DCI68IH` X y:6KN AD69 JE ID ljee2r X tA6HH w >CHJA6I>DC 6K6>A67A: X hBB 8DCI68I <6E 6K6>A67A: X vCK>GDCB:CI6A ;G>:C9AN EGD9J8I _.Dy/ 8DBEA>6CI`
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86E67
8DCI68IH`
8DCI68I
tDCI68I
rAADL67A:
96I6H=
GE C6A
5A98
6B5 diode
A67A
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4506 gh
Abstract: CB 7805 CW 7805 H6b 25 dk qb 7805 ck 8DAA wv-cq BD-9C KJ 9D
Text: 1UJF CJRVSU @NHONRL VJRVSU {1| 3SXRWJU _6JFWXUJV \+A6HI>8 >C?:8I>DC 86H: {2| DNQJU \.A>B 7D9Nc2mjRzknjR/kjhoBBd \2>9: G6C<: D; H:CH>C< 9>HI6C8:cjhkPmBf jhjoPkBd \}JIJ6A >CI:G;:G:C8: EG:K:CI>DCcx-w, sitd {3| DJQT~ HSRWUSPPJU \|><=I *~iv6G@ *~ HL>I8=>C< BD9:
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86IDG
HI6C96G9d
4506 gh
CB 7805
CW 7805
H6b 25
dk qb
7805 ck
8DAA
wv-cq
BD-9C
KJ 9D
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GFM 86A
Abstract: D 1062 transistor p935 gfbb D 1062 gkdl 7
Text: ;90029.D/D; ><?<4DEB8 ;<:; A@G8B B8=4H 9MJWXUMV X X X X X X X X X X w>A: ~Ddp vgijkgm F 7 8 w>A: ~Ddpggloij w>A: ~Ddpt,tfnffhfhngif 6@<= 6@?D46D 74D4 tDCI68I 6GG6C<:B:CI grb gt tDCI68I G:H>HI6C8: ywggkwc/yp hkfB2q ywggkwc/p jffB2 .: DG9:G>C< >C;Dd ywggkwc/yp gfr hkf1rt
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8DCI68IH`
688DG96C8:
tDCI68I
96I6H=
8DCI68I
8IGD68DJHI
GFM 86A
D 1062 transistor
p935
gfbb
D 1062
gkdl 7
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8216
Abstract: h 8216 L146 jhdd ejdd
Text: 97-07 . RQNK ]z,3aeelv^ <:=:2BC@6 9:89 ?>E6@ @6;2F 7KHUVSKT Y Y Y Y Y Y Y Y Y Y v>A: ~Dbn uegghle v>A: ~Dbn hddedhld v>A: ~Dbns,sdhddedeehfi 4>=B24B 52B2 4>:; sDCI68I 6GG6C<:B:CI fq` fr` fs gjdB2 eddB ]6I eq j1ts^ sDCI68I G:H>HI6C8: sDCI68I G6I>C< ]-:Hb AD69^
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86E67
8DCI68IH^
688DG96C8:
sDCI68I
s6E68
96I6H=
8216
h 8216
L146
jhdd
ejdd
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ci 827
Abstract: L146 GEE 86A
Text: 97-07 . RQNK <:=:2BC@6 9:89 ?>E6@ @6;2F 7KHUVSKT Y Y Y Y Y Y Y Y Y Y Y w>A: ~Dco vfhijfl D 5 6 w>A: ~Dco ieefeime w>A: ~Dco t,teneegehjelf 4>=B24B 52B2 4>:; gra gsa gt tDCI68I 6GG6C<:B:CI hkeB2 feeB ]6I fr k1ut^ tDCI68I G:H>HI6C8: tDCI68I G6I>C< ]-:Hc AD69^
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tDCI68I
rAADL67A:
t6E68
96I6H=
8DCI68I
8IGD68DJHI
ci 827
L146
GEE 86A
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d56r
Abstract: 8216 L146 5C transistor
Text: 97-07 . RQNK <:=:2BC@6 9:89 ?>E6@ @6;2F 7KHUVSKT Y Y Y Y Y Y Y Y Y Y Y w>A: ~Dco vfhijfl D 5 6 w>A: ~Dco ieefeime w>A: ~Dco t,teneegehjelf 4>=B24B 52B2 4>:; gra gsa gt tDCI68I 6GG6C<:B:CI hkeB2 feeB ]6I fr k1ut^ tDCI68I G:H>HI6C8: tDCI68I G6I>C< ]-:Hc AD69^
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tDCI68I
rAADL67A:
t6E68
96I6H=
8DCI68I
8IGD68DJHI
d56r
8216
L146
5C transistor
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100 6n tantalum
Abstract: vishay cwr11
Text: capacitors Solid Tantalum Chip Capacitor, Military, Surface-Mount features • Broad capacitance range: 0.10 µF to 100 µF • Broad voltage range: 4 WVDC to 50 WVDC • Military established reliability; Weibull failure rates B, C, and D • Molded case available in four military case codes: A, B, C, D
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CWR11
CWR11
A3A35
FC8357%
VMN-PT9143-0906
100 6n tantalum
vishay cwr11
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aadl
Abstract: vm 87 ad cibh MFH-P BC975 om2t
Text: <:D4 =-A ?A8F>9 :MJYZWMX W ,=DID >HDA6I>DC W |g+ BD9JA:H ;DG >CI:G;68: 7:IL:C v,1 6C9 :MI:GC6A >CEJI 9:K>8:H DG AD69Hf W w>:A:8IG>8 HIG:C<I= jmhh2 |CEJI ~D9JA: W ,G>CI:9 8>G8J>I 7D6G9 BDJCI +JIEJI ~D9JA: W xCK>GDCB:CI6A ;G>:C9AN EGD9J8I a.D{/ 8DBEA>6CIb y>A: *Dfr v-vhkhhihhnmpj
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AD69Hf
89D7C
BC975FE
96I6H=
8DCI68I
8IGD68DJHI
aadl
vm 87 ad
cibh
MFH-P
BC975
om2t
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acgf
Abstract: JW333 86AG W333 D9 - DG e68 DC
Text: <:E1 +>;I.1:, @BE D9?5J :NKYZWNX W ,=DID >HDA6I>DC W imhh1 w>:A:8IG>8 HIG:C<I= W |CHJA6I>DC G:H>HI6C8:rihhh~ W ,G>CI:9 8>G8J>I 7D6G9 BDJCI W -D{. 8DBEA>6CI =ACGF a/t s jm 89E7D=CF=BA b vDCIGDA 8JGG:CI G6C<: mBt ID jhBt -:K:GH: EGDI:8I>DC KDAI6<: ~6Mf k1 ~JHI G:A:6H: 8JGG:CI
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89E7D
96I6H=
8DCI68I
8IGD68DJHI
acgf
JW333
86AG
W333
D9 - DG
e68 DC
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