flash hamming ecc
Abstract: 29F0408RP radiation solid state recorder
Text: SPACE ELECTRONICS INC. FLASH MEMORY S PACE PRODUCTS 29F0408RP DESCRIPTION: • Single 5.0V supply • Organization: - Memory cell array: 4M + 128k bit x 8bit - Data register: (512 + 16)bit x 8bit • Automatic program and erase - Page program: (512 + 16)Byte
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29F0408RP
528-Byte
00Rev1
flash hamming ecc
29F0408RP
radiation solid state recorder
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two-plane program nand
Abstract: No abstract text available
Text: ESMT Preliminary Flash F59L4G81A 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes
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F59L4G81A
250us
4bit/512Byte
two-plane program nand
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Untitled
Abstract: No abstract text available
Text: EN27LN1G08 EN27LN1G08 1 Gigabit 128 Mx 8 , 3.3 V NAND Flash Memory Features • Voltage Supply: 2.7V ~ 3.6V • Reliable CMOS Floating-Gate Technology • Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Data Register : (2K + 64) x 8bit • Endurance:
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EN27LN1G08
it/528
Protect2/30
9x11x1
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Untitled
Abstract: No abstract text available
Text: EN27LN1G08 EN27LN1G08 1 Gigabit 128 Mx 8 , 3.3 V NAND Flash Memory Features • Voltage Supply: 2.7V ~ 3.6V • Reliable CMOS Floating-Gate Technology • Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Data Register : (2K + 64) x 8bit • Endurance:
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EN27LN1G08
it/528
Protect011/12/30
9x11x1
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Untitled
Abstract: No abstract text available
Text: ESM T F59L1G81A Operation Temperature Condition -40 C~85 C Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase
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F59L1G81A
200us
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TMP90P802AP
Abstract: TMP90P802AM TMP91C640 TMP90P802AP programmer with adaptor socket TLCS-90 BM1158
Text: TOSHIBA TLCS-90 Series TMP90P802A CMOS 8–Bit Microcontrollers TMP90P802AP/TMP90P802AM 1. Outline and Characteristics The TMP90P802A is a system evaluation LSI having a built in One-Time PROM for TMP90C802A. Parts No. ROM RAM TMP90P802AP OTP 8192 x 8bit 256 x 8bit
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TLCS-90
TMP90P802A
TMP90P802AP/TMP90P802AM
TMP90P802A
TMP90C802A.
TMP90P802AP
TMP90P802AM
TMP90C802A
TMP91C640
TMP90C840A.
TMP90P802AP
TMP90P802AM
TMP90P802AP programmer with adaptor socket
BM1158
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Untitled
Abstract: No abstract text available
Text: ESMT F59D4G81A Operation Temperature Condition -40°C~85°C Flash 4 Gbit 512M x 8 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase
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F59D4G81A
250us
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Untitled
Abstract: No abstract text available
Text: ESMT F59D2G81A Operation Temperature Condition -40°C~85°C Flash 2 Gbit 256M x 8 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase
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F59D2G81A
250us
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K4S640832D
Abstract: No abstract text available
Text: K4S640832D CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 May 1999 K4S640832D CMOS SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM
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K4S640832D
64Mbit
K4S640832D
A10/AP
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Untitled
Abstract: No abstract text available
Text: K4S640832E CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S640832E CMOS SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM
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K4S640832E
64Mbit
K4S640832E
A10/AP
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Untitled
Abstract: No abstract text available
Text: ESM T Preliminary F59D2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase
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F59D2G81A
250us
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Untitled
Abstract: No abstract text available
Text: K4S640832E CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Oct. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Oct. 2000 K4S640832E CMOS SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM
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K4S640832E
64Mbit
K4S640832E
A10/AP
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K4S280832D
Abstract: No abstract text available
Text: K4S280832D CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.0 Mar. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Mar. 2001 K4S280832D CMOS SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM
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K4S280832D
128Mbit
K4S280832D
A10/AP
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K4S280832M
Abstract: No abstract text available
Text: K4S280832M CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280832M CMOS SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM
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K4S280832M
128Mbit
K4S280832M
A10/AP
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K4S280832B
Abstract: No abstract text available
Text: K4S280832B CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280832B CMOS SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM
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K4S280832B
128Mbit
K4S280832B
A10/AP
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Untitled
Abstract: No abstract text available
Text: ESM T Preliminary F59L4G81A Operation Temperature Condition -40 C~85 C Flash 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase
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F59L4G81A
250us
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TS 4142
Abstract: ro1f
Text: Advance Information KM29V64001 TS/RS 8Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M+128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase
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KM29V64001
200us
71b4142
DD2447D
-TSOP2-400F
74tMAX
-TSQP2-400R
DD24471
TS 4142
ro1f
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VOICE RECORDER IC programming
Abstract: ri8c
Text: Advance Information KM29V64001T/R 8Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase
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KM29V64001
200us
VOICE RECORDER IC programming
ri8c
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ED68
Abstract: AEG T6N 100 FD3405 ED56 T6N21 toshiba c855 aeg T6N BB801 EE20D ED6A
Text: T6N21 TOSHIBA TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT T6N21 SILICON MONOLITHIC 8BIT CONTROLLERS FOR CONSUMER ELECTRONICS PRODUCTS 1. INTRODUCTION The T6N21 is a low-power, high-performance 8bit Controllers for Consumer Electronics Product manufactured with Toshiba's silicon gate technology. It is
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T6N21
T6N21
ED68
AEG T6N 100
FD3405
ED56
toshiba c855
aeg T6N
BB801
EE20D
ED6A
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Untitled
Abstract: No abstract text available
Text: KM29N16000ARS Flash ELECTRONICS 2Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte
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KM29N16000ARS
250us
-TSOP2-400F
-TSOP2-400R
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY FLASH MEMORY KM29N16000ATS/RS 2Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte
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KM29N16000ATS/RS
250us
KM29N16000A
Figure14
0Q24234
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY- - Feb. 1995 Edition 2.1 FUJITSU PRODUCT PROFILE SHEET MB81V17800A-60/-70 CMOS 2M X 8BIT FAST PAGE MODE DYNAMIC RAM CMOS 2,097,152 x 8BIT Fast Page Mode Dynamic RAM The Fujitsu M B81V17800A is a fully decoded CM OS Dynamic RAM DRAM that contains
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MB81V17800A-60/-70
B81V17800A
MB81V17800A
024-bits
DGllb37
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Untitled
Abstract: No abstract text available
Text: - PRELIMINARYApril 1996 Edition 2.2 _ PRODUCT PROFILE SHEET - C P - FUJITSU MB81V17800A-60/-70 CMOS 2M X 8BIT FAST PAGE MODE DYNAMIC RAM CMOS 2,097,152 x 8BIT Fast Page Mode Dynamic RAM The Fujitsu MB81V17800A is a fully decoded CMOS Dynamic RAM DRAM that contains
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MB81V17800A-60/-70
MB81V17800A
024-bits
37MT7Sb
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L4142
Abstract: No abstract text available
Text: PRELIMINARY KM29V16000AT/R 2Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte
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KM29V16000AT/R
250us
L4142
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