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    Diodes Incorporated DDZ18ASF-7

    DIODE ZENER 16.64V 500MW SOD323F
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    DigiKey DDZ18ASF-7 Digi-Reel 4,920 1
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    DDZ18ASF-7 Cut Tape 4,920 1
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    DDZ18ASF-7 Reel 3,000 3,000
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    TME DDZ18ASF-7 1
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    Avnet Silica DDZ18ASF-7 3,000 10 Weeks 3,000
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    Micron Technology Inc MTA18ASF4G72PDZ-3G2F1

    MODULE DDR4 SDRAM 32GB 288RDIMM
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    DigiKey MTA18ASF4G72PDZ-3G2F1 Tray 101 1
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    Micron Technology Inc MTA18ASF4G72PZ-3G2F1

    MODULE DDR4 SDRAM 32GB 288RDIMM
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    DigiKey MTA18ASF4G72PZ-3G2F1 Tray 74 1
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    Micron Technology Inc MTA18ASF2G72PZ-3G2R1

    MODULE DDR4 SDRAM 16GB 288RDIMM
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    DigiKey MTA18ASF2G72PZ-3G2R1 Tray 63 1
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    Mouser Electronics MTA18ASF2G72PZ-3G2R1 56
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    Micron Technology Inc MTA18ASF2G72HZ-3G2R1

    DDR4 16GB SOEDIMM
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    DigiKey MTA18ASF2G72HZ-3G2R1 Box 52 1
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    Mouser Electronics MTA18ASF2G72HZ-3G2R1 138
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    8A SF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: M32C/8A Group M32C/8A SINGLE-CHIP 16/32-BIT CMOS MICROCOMPUTER 1. REJ03B0213-0100 Rev.1.00 Apr 01, 2007 Overview 1.1 Features The M32C/8A Group (M32C/8A) is a single-chip control MCU, fabricated using high-performance silicon gate CMOS technology, embedding the M32C/80 Series CPU core. The M32C/8A Group (M32C/8A) is housed in 100pin plastic molded LQFP package.


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    M32C/8A M32C/8A) 16/32-BIT REJ03B0213-0100 M32C/80 100pin PDF

    Untitled

    Abstract: No abstract text available
    Text: M32C/8A Group RENESAS MCU 1. REJ03B0213-0111 Rev.1.11 Mar 31, 2009 Overview 1.1 Features The M32C/8A Group is a single-chip control MCU, fabricated using high-performance silicon gate CMOS technology, embedding the M32C/80 Series CPU core. The M32C/8A Group is housed in 144-pin and 100-pin


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    M32C/8A REJ03B0213-0111 M32C/80 144-pin 100-pin 16-Mbyte PDF

    M308A0SGP

    Abstract: TDZ TR 18 you ad electronics PLQP0100KB-A PLQP0144KA-A FP-100U
    Text: M32C/8A Group REJ03B0213-0110 Rev.1.10 Jul 15, 2007 RENESAS MCU 1. Overview 1.1 Features The M32C/8A Group is a single-chip control MCU, fabricated using high-performance silicon gate CMOS technology, embedding the M32C/80 Series CPU core. The M32C/8A Group is housed in 144-pin and 100-pin


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    M32C/8A REJ03B0213-0110 M32C/80 144-pin 100-pin 16-Mbyte M308A0SGP TDZ TR 18 you ad electronics PLQP0100KB-A PLQP0144KA-A FP-100U PDF

    G120

    Abstract: SUR805 SUR810 SUR815 SUR820 H139 1/ZNR vfm 820
    Text: SEMTECH CORP SflE ]> • filarial Q0034MS 553 « S E T SUR805 SUR810 SUR820 ULTRAFAST RECOVERY_ ULTRA-FAST 8A RECTIFIER QUICK REFERENCE DATA * Vr = 50 - 200V If = 8A trr = 35ns • Very low reverse recovery time Low forward voltage drop Soft recovery characteristics


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    Q0034MS SUR805 SUR810 O-220AC DS-048 QD03MMb SUR810 SUR815 SUR820 G120 SUR820 H139 1/ZNR vfm 820 PDF

    Untitled

    Abstract: No abstract text available
    Text: 128M Synchronous DRAM SDRAM Rev. 0.60E Oct. '98 Prelim inary MITSUBISHI LSIs 1 M2V28S20TP-7,-8A,-8,-10 M2V28S30TP-7,-8A,-8,-10 M2V28S40TP-7,-8A,-8,-10 (4-BANK X 8,388,608-W O RDX 4-BIT) (4-BANK X 4,194,304-W O RDX (4 -b a n k x 2 ,097,1 5 2 - w o r d x 8-BIT)


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    M2V28S20TP-7 M2V28S30TP-7 M2V28S40TP-7 M2V28S20TP 608-word M2V28S30TP 304-word M2V28S40TP 152-word 16-bit. PDF

    M308A0SGP

    Abstract: M308A M308A3SGP M308A5SGP PLQP0100KB-A PLQP0144KA-A
    Text: APPLICATION NOTE M32C/8A Group Program Download Function 1. Abstract This document describes methods of downloading a user program into the internal RAM area in M32C/8A using the program download function and executing the downloaded user program in internal RAM.


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    M32C/8A M308A0SGP M308A3SGP M308A5SGP PLQP0100KB-A 100P6Q-A) PLQP0144KA-A M308A0SGP M308A M308A3SGP M308A5SGP PLQP0100KB-A PLQP0144KA-A PDF

    Untitled

    Abstract: No abstract text available
    Text: ALPHA SEMICONDUCTOR 1Accllcncc in Analog Power Products AS2880 8A Low DropOut Voltage Regulator Adjustable &Fixed 3.3V FEATURES • • • • • • • Adjustable Output Down to 1.2V or Fixed 3.3V Output Current of 8A Low Dropout Voltage Extremely Tight Load and Line Regulation


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    AS2880 O-220 LT1083/LT1584 Inte1468 PDF

    gate drive circuit for power MOSFET IRF740

    Abstract: irf740 irf741 irf740 mosfet IRF740D IRF743 irf740 STAND FOR IRF740 ir
    Text: IRF740, IRF741, IRF742, IRF743 h a r r is SEMIC0NDUCT0R 8A and 10A, 350V and 400V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 8A and 10A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    IRF740, IRF741, IRF742, IRF743 TA17424. gate drive circuit for power MOSFET IRF740 irf740 irf741 irf740 mosfet IRF740D IRF743 irf740 STAND FOR IRF740 ir PDF

    irf840

    Abstract: IRF841
    Text: iH A R R is SEMIC0NDUCT0R IRF840, IRF841, IRF842, IRF843 7 A and 8A, 450V and 500V, 0.85 and 1.1 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 7A and 8A, 450V and 500V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    IRF840, IRF841, IRF842, IRF843 irf840 IRF841 PDF

    IRF521

    Abstract: IRF520 irf523 F521 irf522
    Text: HAJims S IRF520, IRF521, IRF522, IRF523 S e m ico n d ucto r y y 8A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 8A and 9.2A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    IRF520, IRF521, IRF522, IRF523 TA09594 RF521, IRF521 IRF520 irf523 F521 irf522 PDF

    irf440

    Abstract: No abstract text available
    Text: h a IRF440, IRF441, //ÎF 4 4 2 IRF443 r r i s semi conduct or 7 A and 8A, 450V and 500V, 0.85 and 1.1 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 7A and 8A, 450V and 500V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    IRF440, IRF441, IRF443 irf440 PDF

    Untitled

    Abstract: No abstract text available
    Text: 128M Synchronous D RA M SDRAM Rev. 0.60E Oct. '98 M2V28S20TP-7,-8Al-8,-10 M2V28S30TP-7,-8A,-8,-10 M2V28S40TP-7,-8A,-8,-10 Preliminary M ITSUBISHI LS Is PRELIM INARY (4-BANK X 8,388,608-WORD x 4-BIT) (4-BANK X 4,194,304-WORD x 8-BIT) (4-BANKx 2,097,152-WORD x 16-BIT)


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    M2V28S20TP-7 M2V28S30TP-7 M2V28S40TP-7 608-WORD 304-WORD 152-WORD 16-BIT) 2V28S20TP M2V28S30TP PDF

    B47PP

    Abstract: 6F20 8A SF
    Text: Diodes Internationa! IQ R Rectifier VfM @ JtX Part Number VRR* V >FAV@t C (A) (C) IfSM 'F(AV) 50 Hi (V) (A) 60Hz RQK(DC) (A) (°C/W) Notes Fax on Demand Number Cose Outline Key Standard Recovery B-47PP 8A F05N PP 8A F1N PP 50 50 150 1.45 600 628 0.6 100


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    B-47PP 200X6 200K6 200X0 DO-203AA 6F120 202Uf* 2O20f2u2Uf' 200S-1 200X4 B47PP 6F20 8A SF PDF

    f8gz47

    Abstract: F8JZ47 SF8JZ47 SF8GZ47
    Text: SF8GZ47, SF8JZ47 TOSHIBA THYRISITOR SILICON PLANAR TYPE SF8GZ47, SF8JZ47 MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak off−State Voltage Repetitive Peak Reverse Voltage : VDRM = 400V, 600V : VRRM = 400V, 600V Average On−State Current : IT AV = 8A


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    SF8GZ47, SF8JZ47 SF8GZ47 f8gz47 F8JZ47 SF8JZ47 SF8GZ47 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFD8P06LESM, RFP8P06LE 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET ju iy 1 9 9 7 Features Description • 8A, 60V T hese pro du cts are P -C hannel po w e r M O S FE T s m an ufacture d using the M eg aF E T process. T his process, w h ich uses feature sizes appro aching tho se o f LSI circuits,


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    RFD8P06LESM, RFP8P06LE 0-300i2 1-800-4-HARRIS PDF

    marking code 8A

    Abstract: SF8A400H
    Text: SF8A400H Ultrafast Recovery Rectifier 400V, 8A ULTRAFAST RECOVERY RECTIFIERS Features  High voltage and high reliability  Ultrafast reverse recovery time  High speed switching  Low power loss and High efficiency Pin Configuration Pin 1: Cathode


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    SF8A400H O-220F-2L SF8A400H KSD-D6A011-001 marking code 8A PDF

    freewheeling diode application note

    Abstract: SF8A600H
    Text: SF8A600H Ultrafast Recovery Rectifier 600V, 8A ULTRAFAST RECOVERY RECTIFIERS Features  High voltage and high reliability  Ultrafast reverse recovery time  High speed switching  Low power loss and High efficiency Pin Configuration Pin 1: Cathode


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    SF8A600H O-220F-2L SF8A600H KSD-D0Q025-001 freewheeling diode application note PDF

    SF8j41

    Abstract: SF8G41 SF8G41A SF8J41A
    Text: SF8G41A,SF8J41A TOSHIBA THYRISITOR SILICON PLANAR TYPE SF8G41A,SF8J41A Unit: mm MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak Off−State Voltage : VDRM = 400, 600V Repetitive Peak Reverse Voltage : VRRM = 400, 600V Average On−State Current : IT AV = 8A


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    SF8G41A SF8J41A SF8G41A SF8j41 SF8G41 SF8J41A PDF

    SF8G41A

    Abstract: SF8J41A
    Text: SF8G41A, SF8J41A TOSHIBA THYRISITOR SILICON PLANAR TYPE SF8G41A, SF8J41A MEDIUM POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V, 600V Repetitive Peak Reverse Voltage: VRRM = 400V, 600V Average On−State Current: IT AV = 8A


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    SF8G41A, SF8J41A SF8G41A SF8G41A SF8J41A PDF

    F8JZ47

    Abstract: f8gz47 f8gz47 symbol SF8JZ47 SF8GZ47
    Text: SF8GZ47,SF8JZ47 TOSHIBA THYRISITOR SILICON PLANAR TYPE SF8GZ47,SF8JZ47 Unit: mm MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak off−State Voltage Repetitive Peak Reverse Voltage : VDRM = 400, 600V : VRRM = 400, 600V Average On−State Current : IT AV = 8A


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    SF8GZ47 SF8JZ47 SF8GZ47 400transportation F8JZ47 f8gz47 f8gz47 symbol SF8JZ47 PDF

    TOSHIBA Thyristor

    Abstract: SF8G48 SF8J48 USF8G48 USF8J48
    Text: SF8G48,SF8J48,USF8G48,USF8J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF8G48,SF8J48,USF8G48,USF8J48 MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak Off-State Voltage : VDRM=400,600V Repetitive Peak Reverse Voltage : VRRM=400,600V Average On-State Current : IT AV =8A


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    SF8G48 SF8J48 USF8G48 USF8J48 SF8G48 SF8J48 TOSHIBA Thyristor USF8J48 PDF

    SF8L60

    Abstract: No abstract text available
    Text: SHINDENGEN Super Fast Recovery Rectifiers Single OUTLINE DIMENSIONS SF8L60 Case : FTO-220 Unit : mm 600V 8A FEATURES High Voltage trr70ns Fully Isolated Molding Dielectric strength 2kV guaranteed APPLICATION PFC Switching power supply Free Wheel CTV+B output, lighting


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    SF8L60 FTO-220 trr70ns SF8L60 PDF

    TOSHIBA Thyristor

    Abstract: SF8G48 SF8J48 USF8G48 USF8J48
    Text: SF8G48,SF8J48,USF8G48,USF8J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF8G48, SF8J48, USF8G48, USF8J48 MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak Off-State Voltage: VDRM=400V,600V Repetitive Peak Reverse Voltage: VRRM=400V,600V Average On-State Current: IT AV =8A


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    SF8G48 SF8J48 USF8G48 USF8J48 SF8G48, SF8J48, USF8G48, SF8J48 TOSHIBA Thyristor USF8J48 PDF

    SF8L60

    Abstract: No abstract text available
    Text: SHINDENGEN Super Fast Recovery Rectifiers Single OUTLINE DIMENSIONS SF8L60 Case : FTO-220 Unit : mm 600V 8A FEATURES High Voltage trr70ns Fully Isolated Molding Dielectric strength 2kV guaranteed APPLICATION PFC Switching power supply Free Wheel CTV+B output, lighting


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    SF8L60 FTO-220 trr70ns TorqL60 SF8L60 PDF