8MX32BIT Search Results

Contextual Info: 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O Specification of 256M 8Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

Contextual Info: 256Mbit MOBILE DDR SDRAM based on 2M x 4Bank x32 I/O Specification of 256Mb 8Mx32bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

Contextual Info: DRAM MODULE KM M332V804AS/AZ-L KMM332V804AS/AZ-L Fast Page Mode 8M x 32 DRAM SODIMM Using 4MX16, 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332V804A is a 8Mx32bits Dynamic RAM Part Identification high density memory module. The Samsung KMM332V804A

Contextual Info: KMM5328000CK/CKG KMM53281OOCK/CKG DRAM MODULE KMM5328000CK/CKG & KMM53281 OOCK/CKG with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 00CK is a 8Mx32bits RAM high density Dynamic , Part Identification

KMM5328000BSW

Contextual Info: DRAM MODULE KMM5328000BSW/BSWG KMM5328000BSW/BSWG Fast Page Mode 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5328000B is a 8Mx32bits Dynamic RAM high density memory module. The Samsung KMM5328000B consists of four CMOS 4Mx16bits DRAMs in TSOP packages

Contextual Info: 256Mb Synchronous DRAM based on 2M x 4Bank x32 I/O 256M 8Mx32bit Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 2,097,152 x 32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

Contextual Info: 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O Specification of 256M 8Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

Contextual Info: DRAM MODULE KMM332F804AS/AZ-L KMM332F804AS/AZ-L EDO Mode 8M x 32 DRAM SODIMM Using 4MX16, 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F804A is a 8Mx32bits Dynamic RAM Part Identification high density memory module. The Samsung KMM332F804A

hy5s5b2clfp

Abstract: hy5s5b2clfp-6e
Contextual Info: 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O Specification of 256M 8Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

KMM5328000CK

Abstract: KMM5328000CKG KMM5328100CK KMM5328100CKG
Contextual Info: KMM5328000CK/CKG KMM5328100CK/CKG DRAM MODULE KMM5328000CK/CKG & KMM5328100CK/CKG with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 00CK is a 8Mx32bits Dynamic RAM high density memory module. The Samsung

Contextual Info: M53210800CW0/CB0 M53210810CW0/CB0 DRAM MODULE M53210800CW0/CB0 & M53210810CW0/CB0 with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5321080 1 0C is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5321080(1)0C

Contextual Info: M53210800DW0/DB0 M53210810DW0/DB0 DRAM MODULE M53210800DW0/DB0 & M53210810DW0/DB0 with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5321080 1 0D is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5321080(1)0D

DIODE SMD K7

Abstract: Socket AM2 Socket 754 "Socket 754" ah2 c49 106 39p ati sb400 VSS63 AC588 2200P-0402 SB450
Contextual Info: 5 MSI 4 3 2 1 MS-1036 Ver:0A D D DDR 333/400 AMD K8 Socket 754 GDDR3 8MX32bit*8PCS Clock Generator 3~6 17 15~16 7 8 HT DDR SODIMM * 2 LCD LVDS 34 C DVI DVI_A/D 34 TV OUT RGB NEW CARD PCI-E/USB PCI-E PCIE VGA ATI M26-X 26 North Bridge PCIE 12~14 ATI RX480

MDB35

Abstract: smd e2b L43 SMD a89 diode smd Socket AM2 Socket 754 "Socket 754" ah2 c49 106 39p ati sb400 ap c21 100u 39p
Contextual Info: 5 MSI 4 3 2 1 MS-1036 Ver:0A D D DDR 333/400 AMD K8 Socket 754 GDDR3 8MX32bit*8PCS Clock Generator 3~6 17 15~16 7 8 HT DDR SODIMM * 2 LCD LVDS 32 C DVI DVI_A/D 32 TV OUT RGB NEW CARD PCI-E/USB PCI-E PCIE VGA ATI M26-X 26 North Bridge PCIE 12~14 ATI RX480

Contextual Info: Preliminary M53230800DW0/DB0 M53230810DW0/DB0 DRAM MODULE M53230800DW0/DB0 & M53230810DW0/DB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323080 1 0D is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0D

thermik sensor

Abstract: a17s JC814 MS-1036 C94S TFK U108 aks ti 79 JC878 TFK 148 RB551
Contextual Info: A » 1 0 3 6 V e r : 0 A ÙÙ B 3 3 3 /4 0 0 AMÒ K8 Socket 754 Clock Generator 6ÙÙR3 8MX32bit*8PCS 1 5 -1 6 H T D Ù R S O Ù IM M *2 \7 P C IE NEW CARO PCI-E/USB PCI-E 26 North Bridge A JIR X 480 LAN ET13Î0 p c ie 30 9~11 OZ7ÎÎMP CARÙBUS CARÙREAÙER

hy5s5b2clfp

Contextual Info: 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O Specification of 256M 8Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

Contextual Info: 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O Specification of 256M 8Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

H55S2622JFR

Abstract: mobile MOTHERBOARD CIRCUIT diagram 3g mobile MOTHERBOARD CIRCUIT diagram H55S2532JFR
Contextual Info: 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O Specification of 256M 8Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

Contextual Info: DRAM MODULE KM M332V404AS/AZ-L KMM332V404AS/AZ-L Fast Page Mode 4M x 32 DRAM SODIMM Using 4MX16, 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332V404A is a 8Mx32bits Dynamic RAM Part Identification high density memory module. The Samsung KMM332V404A

Contextual Info: 256Mb Synchronous DRAM based on 2M x 4Bank x32 I/O 256M 8Mx32bit Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 2,097,152 x 32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

HY5V52AFP

Abstract: HY5V52AFP-h HY5V52ALFP HY5V52A
Contextual Info: 256Mb Synchronous DRAM based on 2M x 4Bank x32 I/O 256M 8Mx32bit Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 2,097,152 x 32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

Contextual Info: M53230800DW0/DB0 M53230810DW0/DB0 DRAM MODULE M53230800DW0/DB0 & M53230810DW0/DB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323080 1 0D is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0D

capacitor taa

Abstract: KMM5328004BSW KMM5328004BSWG
Contextual Info: DRAM MODULE KMM5328004BSW/BSWG KMM5328004BSW/BSWG EDO Mode 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5328004B is a 8Mx32bits Dynamic RAM high density memory module. The Samsung KMM5328004B consists of four CMOS 4Mx16bits DRAMs in TSOP packages