881-I DIODE Search Results

UFNF230

Abstract: F-431
Contextual Info: U N I T R O D E CO RP 9347963 ^2 D E | ci347clb3 OGlDflfll 92D U N I T R O D E CORP POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel 10 881 D UFNF430 UFNF431 UFNF432 UFNF433 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.

LB208

Abstract: LB207 LB108 LB101 LB205 LB204 International Power Sources lb101 LB307 Lb206 LB105
Contextual Info: I NT L P O W E R S O U R C E S INC b3 E D • 4 0 5 3 3 7 5 0 0 0 0 2 3 0 T5S ■ INP DC/DC Converters ■ International Power Sources, Inc. '" S '. / 200 Butterfield Drive Ashland, Massachusetts 01721 Tel. 508 881-7434 Fax (508) 879-8669 LB Series: 25/30 Watt

s40H

Contextual Info: Schottky Barrier Diodes High frequency rectifying E-pack Lead type E-pack (SMD) Twin Diodes Absolute Maximum Ratings 1.0 *1 1.0 93*2 *1 1.0 1400 65 150 0.58 2 2 120 3.3 -40 -150 150 0.55 2.5 2.5 116 3.3 -5 5 -150 150 0.45 190 -40 -150 150 2.5 3.5 3.5 150

25SC6M

Abstract: D10SC4M 15SCA4M 1/jrc 40150
Contextual Info: Schottky Barrier Diodes High f r e q u e n c y r e c t i f y in g E-pack T w in D io d e s 1Z Absolute Maximum Ratings Electrical Characteristics Vf 0jc max [pF] [”C/W] 1 65 25*2 *4 2 120 3.3 * 1 2.5 116 3.3 3.5 190 3.2 150 2.5 130 — lo Conditions Tc

Contextual Info: Schottky Barrier Diodes High fre q u e n c y re c tify in g Absolute Maximum Ratings V rm to Conttns tv ] [A ] C-c] „ S1ZA S4 40 I .2 49* D 4 SC 6 M 60 4 40 5 Type No. . Electrical Characteristics Ifs m Tstg Tj Vf max [A ] C'C] C'C] [V ] 40 — 40 — 150

D2980

Abstract: emitter phototransistor til 31 NA TRANSISTOR TIL187 TIL187-1 TIL187-4 TIL188 TIL188-1 TIL188-4
Contextual Info: TILI 87-1 THRU TIL187-4 TILI 88-1 THRU TILI 88-4 AC-INPUT OPTOCOUPLERS/OPTOISOLATORS D2980, JANUARY 1987-REVISED JULY 1989 AC Signal Input Gallium Arsenide Dual-Diode Infrared Source Optically Coupled to a Silicon N-P-N Darlington Phototransistor High Current Transfer Ratio, 500% Minimum

ETS-300-086

Abstract: CMX881E1 EIA-603 MPT1327 P181 27e 39
Contextual Info: CML Microcircuits COMMUNICATION SEMICONDUCTORS CMX881 Baseband Processor for PMR and Trunked Radios D/881/6 February 2004 Provisional Issue Full-Feature Audio-Processing, Signalling and Data for Half Duplex Dual-Mode Analogue PMR and Trunked Radios Features

Contextual Info: CMX881 Baseband Processor for PMR and Trunked Radios D/881/16 June 2008 Full-Feature Audio-Processing, Signalling and Data for Half Duplex Dual-Mode Analogue PMR and Trunked Radios Features • Automatic signal type scanning and IRQ on detection of valid Rx signals, level or RSSI

84E DIODE

Abstract: 1200b pcb CMX881E1 TBA audio power amplifiers CMX881 CMX881D6 MPT1327 TONE ctcss ETS-300-086 7C2 diode
Contextual Info: CML Microcircuits COMMUNICATION SEMICONDUCTORS CMX881 Baseband Processor for PMR and Trunked Radios D/881/2 May 2002 Advance Information Full-Feature Audio-Processing, Signalling and Data for Half Duplex Dual-Mode Analogue PMR and Trunked Radios Features • Automatic signal scanning and IRQ on

using octave DTMF DECODER

Contextual Info: CMX881 Baseband Processor for PMR and Trunked Radios D/881/17 April 2009 Full-Feature Audio-Processing, Signalling and Data for Half Duplex Dual-Mode Analogue PMR and Trunked Radios Features • Automatic signal type scanning and IRQ on detection of valid Rx signals, level or RSSI

CMX881

Abstract: tone encoder msk P1217 39-tone CMX881E1 CMX881D6 MPT1327 d881 P1141 39tone
Contextual Info: CMX881 Baseband Processor for PMR and Trunked Radios D/881/17 April 2009 Full-Feature Audio-Processing, Signalling and Data for Half Duplex Dual-Mode Analogue PMR and Trunked Radios Features • Automatic signal type scanning and IRQ on detection of valid Rx signals, level or RSSI

2400B

Abstract: MPT1327
Contextual Info: CML Microcircuits COMMUNICATION SEMICONDUCTORS CMX881 Baseband Processor for PMR and Trunked Radios D/881/9 February 2005 Provisional Issue Full-Feature Audio-Processing, Signalling and Data for Half Duplex Dual-Mode Analogue PMR and Trunked Radios Features

TIL188-4

Contextual Info: TILI 87-1 THRU TILI 87-4 TILI 88-1 THRU TILI 88-4 AC-INPUT OPTOCOUPLERS/OPTOISOLATORS D2980, JANUARY 1987-REVISED JULY 1989 AC Signal Input • High Current Transfer Ratio, 500% Minimum at Ip - 10 mA, Up to 1500% Minimum at If - 2 mA with Four Categories Gallium Arsenide Dual-Diode Infrared Source

Contextual Info: CMX881 Baseband Processor for PMR and Trunked Radios D/881/15 July 2007 Provisional Issue Full-Feature Audio-Processing, Signalling and Data for Half Duplex Dual-Mode Analogue PMR and Trunked Radios Features • Automatic signal type scanning and IRQ on detection of valid Rx signals, level or RSSI

Lautsprecher LP

Abstract: serviceanleitung kr 660 service-mitteilungen Lautsprecher L 2911 RFT KR 650 Statron Mitteilungen Lautsprecher RFT L 2911 KR 650 service mitteilung
Contextual Info: SERVICE-MITTEILUNGEN t R U M H IRADIO-television | AUSGABE: 1985 00 VEB INDUSTRIEVERTRIE B RU ND FU NK UND FER NS EH EN Sei ’j 1 - 4 Mitteilung aus dem VEB Fernsehgerätewerk Staßfurt Einsatz des Tuners FET - 1D der Fa. VIDEO-TON VR Ungarn im Colormat 4306/07_^

CMX881

Abstract: circuit diagram for simple RF transmitter mpt 134 CMX881D6 CMX881E1 MPT1327 selcall PMR 64 Capacitors 8A4 diode
Contextual Info: CML Microcircuits COMMUNICATION SEMICONDUCTORS CMX881 Baseband Processor for PMR and Trunked Radios D/881/7 March 2004 Provisional Issue Full-Feature Audio-Processing, Signalling and Data for Half Duplex Dual-Mode Analogue PMR and Trunked Radios Features • Automatic signal type scanning and IRQ on

Contextual Info: Central CMWSH-4 TM Semicondui SURFACE MOUNT SUPERmini DUAL ISOLATED SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMWSH-4, 40V, Low Vp, consists of two galvanically isolat­ ed SUPERmini™ Silicon Schottky diodes. The CMWSH-4 has been designed for use in high

marking D3 SOT26

Contextual Info: Central" CMXSH-3 Semiconductor Corp. SURFACE MOUNT SUPERmini TRIPLE ISOLATED SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXSH-3 type contains three 3 Isolated Schottky Silicon Switching Diodes, manufactured by the epitaxial planar

CMLSH-4

Contextual Info: Central“ CMLSH-4 SURFACE MOUNT PICOmini DUAL, ISOLATED SILICON SCHOTTKY DIODES Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLSH-4 are two individual electrically isolated 40 volt Schottky Diodes, in a space saving SOT-563 surface mount

1N846

Abstract: 1N889 APD400
Contextual Info: Datasheet 1N846 THRU 1N889 Central SILICON GENERAL PURPOSE DIODES Semiconductor Corp. AXIAL LEAD GLASS CASE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors The CENTRAL SEMICONDUCTOR 1N846 s e r i e s

Contextual Info: Central CMLSH-4DO SURFACE MOUNT PICOmini DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLSH-4DO are two individual electrically isolated 40 volt Schottky Diodes of opposing polarity, in a space

Contextual Info: Central CMPSH-3 CMPSH-3A CMPSH-3C CMPSH-3S Semiconductor Corp. SURFACE MOUNT SILICON SCHOTTKY DIODES DESCRIPTION: The Central Semiconductor CMPSH-3 series types are Silicon Schottky diodes designed for surface mount fast switching applications requiring a low forward voltage drop.

Contextual Info: Central' CMKSH-3T Semiconductor Corp. SURFACE MOUNT ULTRAmini TRIPLE ISOLATED SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKSH-3T type contains three 3 Isolated Silicon Schottky Diodes, epoxy molded in a SOT-363 surface mount package. This ULTRAmini™ device has

diode Marking Code 53

Contextual Info: Central" CMOSH-3 Semiconductor eorp. SURFACE MOUNT ULTRAmini SILICON SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH-3 type is a Silicon Schottky diode, epoxy molded in an ULTRAmini™ surface mount package, designed for fast switching applications requiring