4cx20000d-9015
Abstract: 9015 transistor specification sheet 4cx20000D 88-108 rf amplifier 9015 4cx20,000d an power 88-108 mhz 9015 transistor 9015 transistor specification transistor 9015
Text: The EIMAC 4CX20,000D/9015 is a ceramic/metal VHF power tetrode intended for use as a RF amplifier up to 110 MHz. It is particularly recommended for use in the 88-108 MHz FM band. It features an electromechanical structure which provides high RF operating efficiency and low RF losses. The
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4CX20
000D/9015
SK-360
SK-336
000D/
000D/9015
4cx20000d-9015
9015 transistor specification sheet
4cx20000D
88-108 rf amplifier
9015
4cx20,000d
an power 88-108 mhz
9015 transistor
9015 transistor specification
transistor 9015
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blf578
Abstract: BN-61-202 NARDA 3020A BLF578 fm band cw 7808 ATC100B391 blf574 amidon BN-61-202 BN61202 ATC100B391JT500X
Text: AN10800 Using the BLF578 in the 88 MHz to 108 MHz FM band Rev. 01 — 13 October 2009 Application note Document information Info Content Keywords BLF578, performance, high-efficiency tuning set-up, high voltage LDMOS, amplifier implementation, Class-C CW, FM band, pulsed power
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AN10800
BLF578
BLF578,
AN10800
BN-61-202
NARDA 3020A
BLF578 fm band
cw 7808
ATC100B391
blf574
amidon BN-61-202
BN61202
ATC100B391JT500X
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blf574
Abstract: Anzac CH132 amidon BN-61-202 ATC100B6R8CT500X NARDA 3020A bn-61-202 FM low power LDMOS NXP transistor semirigid cw 7808 hp778d
Text: AN10714 Using the BLF574 in the 88 MHz to 108 MHz FM band Rev. 01 — 26 January 2010 Application note Document information Info Content Keywords BLF574, 600 MHz performance, high voltage LDMOS, amplifier implementation, Class-B CW, FM band, pulsed power Abstract
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AN10714
BLF574
BLF574,
AN10714
Anzac CH132
amidon BN-61-202
ATC100B6R8CT500X
NARDA 3020A
bn-61-202
FM low power LDMOS NXP transistor
semirigid
cw 7808
hp778d
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TUI-lf-9
Abstract: ATC700B392JT50X
Text: Document Number: MMRF1016H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1016HR5 This 600 W RF power LDMOS transistor is designed primarily for wideband RF power amplifiers with frequencies up to 500 MHz. This device is unmatched
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MMRF1016H
MMRF1016HR5
7/2014Semiconductor,
TUI-lf-9
ATC700B392JT50X
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940 629 MOTOROLA 220
Abstract: MOTOROLA POWER 726 MOS FET TRANSISTOR MRF158 VK200 20WATTS
Text: MOTOROLA Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance
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MRF158/D
MRF158
940 629 MOTOROLA 220
MOTOROLA POWER 726 MOS FET TRANSISTOR
MRF158
VK200
20WATTS
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gw 6203
Abstract: AU-1291 MITEQ
Text: MITEQ AU-1291 AMPLIFIER FREQUENCY MHz 0.01–500 MODEL NUMBER GAIN (dB) (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AU-1291 60 0.75 2.0:1 50/50 1.4 10 66 14 65 13 95 4 12 63 P1dB 62 61 11 10 60 9
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AU-1291
300staff,
gw 6203
MITEQ
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MRF6VP2600H
Abstract: T1Z20 transformer calculator j185 an power 88-108 mhz MOSFET IRL A114 A115 5093NW20R00J ATC100B470JT500XT
Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 1, 7/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.
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MRF6VP2600H
MRF6VP2600HR6
MRF6VP2600H
T1Z20
transformer calculator
j185
an power 88-108 mhz
MOSFET IRL
A114
A115
5093NW20R00J
ATC100B470JT500XT
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ATC100B151J
Abstract: ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT
Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 0, 3/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.
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MRF6VP2600H
MRF6VP2600HR6
MRF6VP2600H
ATC100B151J
ATC100B101JT500XT
G2225X7R225KT3AB
ATC100B151JT500XT
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mrf6vp2600h
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 2.1, 11/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.
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MRF6VP2600H
MRF6VP2600HR6
MRF6VP2600H
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MRF6VP2600H
Abstract: ATC100B101JT500XT DVB-T Schematic 88-108 an power 88-108 mhz MRF6VP2600HR6 ferrite transformer 0.14 ratio push pull transformer calculator ATC200B103KT50XT Tantalum chip Capacitor 226 20k
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4.1, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.
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MRF6VP2600H
MRF6VP2600HR6
100fficers,
MRF6VP2600H
ATC100B101JT500XT
DVB-T Schematic
88-108
an power 88-108 mhz
MRF6VP2600HR6
ferrite transformer 0.14 ratio push pull
transformer calculator
ATC200B103KT50XT
Tantalum chip Capacitor 226 20k
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NIPPON CAPACITORS
Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.
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MRF6VP2600H
MRF6VP2600HR6
NIPPON CAPACITORS
MRF6VP2600HR6 application notes
Tantalum chip Capacitor 226 20k
MRF6VP2600HR6
Nippon chemi
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940 629 MOTOROLA 113
Abstract: Nippon capacitors
Text: MOTOROLA Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance
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MRF158/D
MRF158
940 629 MOTOROLA 113
Nippon capacitors
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BX5103
Abstract: FP5103 TM5103 TN5103
Text: RF AMPLIFIER MODEL TM5103 Available as: TM5103, 4 Pin TO-8 T4 TN5103, 4 Pin Surface Mount (SM3) FP5103, 4 Pin Flatpack (FP4) BX5103, Connectorized Housing (H1) Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point. +51 dBm (Typ.)
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TM5103
TM5103,
TN5103,
FP5103,
BX5103,
BX5103
FP5103
TM5103
TN5103
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BGY133
Abstract: BGY132 PHILIPS 108 CAPACITOR Amplifier Modules VHF Amplifier Chip "Amplifier Modules" vHF amplifier module BGV132
Text: Philips Semiconductors Product specification VHF amplifier modules BGY132; BGY133 FEATURES DESCRIPTION • Broadband VHF amplifiers The BGY132 and BGY133 are two stage amplifier modules. Each module comprises two NPN silicon planar transistor chips together with lumped-element
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BGY132;
BGY133
BGY132
BGY133
-SOT132B
711D6Eb
00742L5
OT132B.
PHILIPS 108 CAPACITOR
Amplifier Modules
VHF Amplifier Chip
"Amplifier Modules"
vHF amplifier module
BGV132
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SMA66-1
Abstract: No abstract text available
Text: W J - A 6 6 - 1 / S M A 6 6 - 1 10 to 1000 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN - TWO STAGES: 27.5 dB TYP. LOW NOISE: < 3.0 dB (TYP.) HIGH POWER OUTPUT: 15.0 dBm (TYP.) WIDE POWER SUPPLY RANGE: 5 VOLTS TO 15 VOLTS
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A66-1
Compre27
DQ71D3
SMA66-1
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BGY133
Abstract: 65ZS 88-108 rf amplifier BGY132 vhf power module
Text: Philips Semiconductors Product specification VHF amplifier modules BGY132; BGY133 FEA TUR ES D ES C R IPTIO N • Broadband V H F amplifiers The BGY132 and BGY133 are two stage amplifier modules. Each module comprises two NPN silicon planar transistor chips together with lumped-element
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BGY132;
BGY133
BGY132
BGY133
-SOT132B
MSB029
7110fl2b
65ZS
88-108 rf amplifier
vhf power module
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BGY33
Abstract: "Amplifier Modules" Philips bgy32 Philips BGY36 VHF Power amplifier Module philips rf power amplifier module BGY32 BGY35 88-108 rf amplifier an power 88-108 mhz BGY36
Text: N AMER PHILIPS/DISCRETE • bRE » BGY32 BGY33 BGY35 BGY36 bb53T31 003Q211 4b7 H A P X VHF POWER AMPLIFIER MODULES A range o f broadband amplifier modules designed fo r mobile communications equipments, operating directly from 12 V vehicle electrical systems. The devices w ill produce 18 W output into a 50 £2 load.
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QQ3DE11
BGY32
BGY33
BGY35
BGY36
BGY33
"Amplifier Modules"
Philips bgy32
Philips BGY36 VHF Power amplifier Module
philips rf power amplifier module
88-108 rf amplifier
an power 88-108 mhz
BGY36
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors M bbSBTSl ODBOSAb 3b 2 M APX Preliminary specification V H F am p lifie r m odu le B G Y 145A N AMER P H I L I P S / D I S C R E T E DESCRIPTION b ^ E 1> PINNING -S O T183A The BGY145A is a RF amplifier module, designed for use in transmitters of mobile
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T183A
BGY145A
BGY145A
MCB441
Y145A
OT183A.
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Untitled
Abstract: No abstract text available
Text: 5/91 F 7 ^ -0 9 -0 1 I^ O D U E F ÌH ' 'f r - Z f - ß - W 2225-K Martin Avenue, Santa Clara, CA 95050 FAX naM P O N B N TS s 408 492-1400 (408) 492-1500 10 to 2000 MHz TO-8 Cascadable Amplifier I r AP2009 (Typical Values) Medium Gain .
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2225-K
AP2009
EJ00B33M
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PDF
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surface mount transistor A40
Abstract: transistor BC 157
Text: W J - A 4 / S M A 4 500 TO 4000 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRA-WIDE BANDWIDTH: 500-4000 MHz HIGH GAIN -TWO STAGES: 14.5 dB TYP. HIGH OUTPUT LEVEL: +15.0 dBm (TYP.) Outline Drawings A40 Specifications’* 0.450 n
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50-ohm
WJ-CA40
WJ-A40
surface mount transistor A40
transistor BC 157
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5n53
Abstract: AN7213 7s752a fm frontend CDA 10.7MHZ ELQ-5N53 108MHz eif-7s752a 76-108MHz power amplifier 88- 108mhz
Text: A N 7213 AN7213 FM Front-end Circuit for Radio Unit : mm • Description The AN7213 is a monolithic integrated circuit designed for FM front-end of the portable radio. 6.0 6.0 1 1 . ■ Features • • • Built-in RF amplifier, frequency converter, local
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AN7213
AN7213
013flSL
EIF-7S752A
108MHz
ELQ-5N53
ELQ-5N111
5n53
7s752a
fm frontend
CDA 10.7MHZ
76-108MHz
power amplifier 88- 108mhz
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Untitled
Abstract: No abstract text available
Text: Available as: RF AMPLIFIER MODEL TM5103 TM5103, 4 Pin TO-8 T4 TN5103, 4 Pin Surface Mount (SM3) FP5103, 4 Pin Flatpack (FP4) BX5103, Connectorized Housing (H1) Features Typical Intermodulation Performance at 2 5 0 C * High Third Order Intercept: +36 dBm Typical
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TM5103
TM5103,
TN5103,
FP5103,
BX5103,
S11--------Deg
S21---------Deg
S12---------Deg
S22-----Deg
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BGY145A
Abstract: FX1115 GG30E philips rf power amplifier module vHF amplifier module 3b2 229
Text: Philip8_Semiconductore^_ bbSB^Bl QQ3Q2fiti 3 b 2 HIAPX Preliminary specification VHF amplifier module BGY145A N AMER PH I LIPS/DISCRETE DESCRIPTION b*iE 1> PINNING - SOT183A The BGY145A is a RF amplifier module, designed for use in transmitters of mobile communications equipment
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302flb
BGY145A
BGY145A
DD30ET2
OT183A.
FX1115
GG30E
philips rf power amplifier module
vHF amplifier module
3b2 229
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PDF
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MRF904
Abstract: No abstract text available
Text: HOTOROLA SC XSTRS/R F 4bE T> b3b?25M DOIMiaS 4 MOTOROLA • SEM ICONDUCTOR TECHNICAL DATA MRF904 The RF Line NPN SIUCON HIGH-FREQUENCY TRANSISTOR . . . designed for use as low-noise, high-gain, general purpose amplifiers. High Current-Gain — Bandwidth Product —
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MIL-S-19500
MRF904HX,
MRF904HXV
MRF904
llec33
MRF904
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