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    86A MARKING Search Results

    86A MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    86A MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Product Group: Vishay Semiconductors / Diodes / May 2015 /FF-DD-003-2015 From: Henry Chi, Product Marketing Sr. Manager Tel: +886 2 2911 3861 ext. 6533 office E-mail: henry.chi@vishay.com Subject: Information Notice – Product Marking DESCRIPTION OF CHANGE: Addition of cathode band on SMPCxxA series Transzorb TVS devices


    Original     		PDF /FF-DD-003-2015 SMPC10A-M3/86A A-M3/86A SMPC20A-M3/86A A-M3/87A SMPC11A-M3/86A SMPC20A-t NY11788 D-74072

    to-277A

    Abstract: JESD22-B102 J-STD-002 SS5P6
    Text: New Product SS5P5 & SS5P6 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement • Low forward voltage drop, low power


    Original     		PDF J-STD-020, O-277A 2002/95/EC 2002/96/EC to-277A JESD22-B102 J-STD-002 SS5P6

    JESD22-B102

    Abstract: J-STD-002
    Text: New Product SS3P5L & SS3P6L Vishay General Semiconductor Low VF High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement • Low forward voltage drop, low power


    Original     		PDF J-STD-020, O-277A 2002/95/EC 2002/96/EC JESD22-B102 J-STD-002

    TO-277A

    Abstract: SS3P4L JESD22-B102 J-STD-002 Marking Code s33 MARKING CODE 87A marking code s34 eas code 86A marking TO277A
    Text: New Product SS3P3L & SS3P4L Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power


    Original     		PDF J-STD-020, 2002/95/EC 2002/96/EC O-277A TO-277A SS3P4L JESD22-B102 J-STD-002 Marking Code s33 MARKING CODE 87A marking code s34 eas code 86A marking TO277A

    TO-277A

    Abstract: MARKING CODE 87A JESD22-B102 SS10P6 TO-277A weight J-STD-002 S105 marking 86A ss10p6hm3 86A marking
    Text: New Product SS10P5 & SS10P6 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Guardring for overvoltage protection


    Original     		PDF SS10P5 SS10P6 J-STD-020, 2002/95/EC 2002/96/EC O-277A TO-277A MARKING CODE 87A JESD22-B102 SS10P6 TO-277A weight J-STD-002 S105 marking 86A ss10p6hm3 86A marking

    Untitled

    Abstract: No abstract text available
    Text: New Product SS8P2L & SS8P3L Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Low forward voltage drop, low power


    Original     		PDF J-STD-020, 2002/95/EC 2002/96/EC O-277A 08-Apr-05

    SS10PH45

    Abstract: No abstract text available
    Text: New Product SS10PH45 Vishay General Semiconductor High Current Density Surface Mount Schottky Rectifier eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Guardring for overvoltage protection • High barrier technology, TJ = 175 °C


    Original     		PDF SS10PH45 O-277A J-STD-020, 2002/95/EC 2002/96/EC 08-Apr-05 SS10PH45

    diode marking s86c

    Abstract: TO-277A to277a S86C ss8p6c-m3 "Schottky Diode" SMPC SS8P5C marking 86A JESD22-B102 J-STD-002
    Text: New Product SS8P5C & SS8P6C Vishay General Semiconductor High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power


    Original     		PDF J-STD-020, 2002/95/EC 2002/96/EC O-277A diode marking s86c TO-277A to277a S86C ss8p6c-m3 "Schottky Diode" SMPC SS8P5C marking 86A JESD22-B102 J-STD-002

    ss10p4hm3

    Abstract: SS10P3 SS10P4 ss10p4-m3 JESD22-B102 J-STD-002 S103 TO-277A ss10p4-e3 ss10p4he3
    Text: New Product SS10P3 & SS10P4 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Guardring for overvoltage protection • Low forward voltage drop, low power


    Original     		PDF SS10P3 SS10P4 J-STD-020, 2002/95/EC 2002/96/EC O-277A ss10p4hm3 SS10P3 SS10P4 ss10p4-m3 JESD22-B102 J-STD-002 S103 TO-277A ss10p4-e3 ss10p4he3

    V8P10

    Abstract: No abstract text available
    Text: New Product V8P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.466 V at IF = 4 A TMBS eSMP TM Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement


    Original     		PDF V8P10 J-STD-020, 2002/95/EC 2002/96/EC O-277A 18-Jul-08 V8P10

    Untitled

    Abstract: No abstract text available
    Text: New Product S4PB thru S4PM Vishay General Semiconductor High Current Density Surface Mount Glass Passivated Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Glass passivated chip junction


    Original     		PDF J-STD-020, 2002/95/EC 2002/96/EC O-277A 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product V12P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A TMBS eSMP TM Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement


    Original     		PDF V12P10 J-STD-020, 2002/95/EC 2002/96/EC O-277A 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product SS8P5C & SS8P6C Vishay General Semiconductor High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier FEATURES • Very low profile - typical height of 1.1 mm eSMP TM Series • Ideal for automated placement • Low forward voltage drop, low power


    Original     		PDF J-STD-020, 2002/95/EC 2002/96/EC O-277A 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product S4PB thru S4PM Vishay General Semiconductor High Current Density Surface Mount Glass Passivated Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Glass passivated chip junction


    Original     		PDF J-STD-020, 2002/95/EC 2002/96/EC O-277A 08-Apr-05

    JESD22-B102

    Abstract: J-STD-002 S105 SS10P6
    Text: New Product SS10P5 & SS10P6 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Guardring for overvoltage protection


    Original     		PDF SS10P5 SS10P6 J-STD-020, 2002/95/EC 2002/96/EC O-277A 18-Jul-08 JESD22-B102 J-STD-002 S105 SS10P6

    TP 0720

    Abstract: No abstract text available
    Text: New Product SS8PH9 & SS8PH10 Vishay General Semiconductor High Current Density Surface Mount High-Voltage Schottky Rectifier eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Guardring for overvoltage protection


    Original     		PDF SS8PH10 J-STD-020, 2002/95/EC 2002/96/EC O-277A 08-Apr-05 TP 0720

    V10P10

    Abstract: No abstract text available
    Text: New Product V10P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES TMBS eSMP TM Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement


    Original     		PDF V10P10 J-STD-020, 2002/95/EC 2002/96/EC O-277A O-277As 08-Apr-05 V10P10

    S3330

    Abstract: No abstract text available
    Text: New Product SS3P3L & SS3P4L Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Low forward voltage drop, low power


    Original     		PDF J-STD-020, 2002/95/EC 2002/96/EC O-277A 08-Apr-05 S3330

    Untitled

    Abstract: No abstract text available
    Text: New Product SS10P3 & SS10P4 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.1 mm eSMP TM Series • Ideal for automated placement K • Guardring for overvoltage protection


    Original     		PDF SS10P3 SS10P4 J-STD-020, 2002/95/EC 2002/96/EC O-277A 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: New Product SS3P5L & SS3P6L Vishay General Semiconductor Low VF High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Low forward voltage drop, low power


    Original     		PDF J-STD-020, 2002/95/EC 2002/96/EC O-277A 08-Apr-05

    V8P10

    Abstract: No abstract text available
    Text: New Product V8P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.466 V at IF = 4 A TMBS eSMP TM Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement


    Original     		PDF V8P10 J-STD-020, 2002/95/EC 2002/96/EC O-277A 08-Apr-05 V8P10

    V10P10

    Abstract: No abstract text available
    Text: New Product V10P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES TMBS eSMP TM Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement


    Original     		PDF V10P10 J-STD-020, 2002/95/EC 2002/96/EC O-277A O-277Aany 18-Jul-08 V10P10

    Untitled

    Abstract: No abstract text available
    Text: New Product SS3P5L & SS3P6L Vishay General Semiconductor Low VF High Current Density Surface Mount Schottky Barrier Rectifiers eSMP TM FEATURES • Very low profile - typical height of 1.1 mm Series • Ideal for automated placement K • Low forward voltage drop, low power


    Original     		PDF J-STD-020, 2002/95/EC 2002/96/EC O-277A 18-Jul-08

    2N705

    Abstract: I960 ARMv Germanium mesa
    Text: MIL-S-19500/86A 20 March 19o4_ SUPERSEDING MII/-S-19500/86 NAVY 6 June I960 ' MILITARY SPECIFICATION TRANSISTOR, PNP, GERMANIUM TYPE 2N705 This specification has been approved bv the Department of Defense agd is mandatory for use by the Department^ of the Armv. the Navv.


    OCR Scan     		PDF MH/-S-19500/86A I/-S-19500/86 2N705 MIL-S-19500 T0-18) MIL-S-19500. ruL-S-19500 2N705 I960 ARMv Germanium mesa