86TSOP2 Search Results

k4s283232

Abstract: K4S283232E TSOP SDRAM
Contextual Info: K4S283232E-T CMOS SDRAM 4Mx32 SDRAM E-die TSOP Revision 1.0 May. 2003 Rev. 1.0 May. 2003 K4S283232E-T CMOS SDRAM Revision History Revision 1.0 May 14. 2003 • First spec release. Rev. 1.0 May. 2003 K4S283232E-T CMOS SDRAM 1M x 32Bit x 4 Banks SDRAM in 86TSOP2

Z04B

Abstract: MR27V6441L MARK Z04D MR27V6441L-xxxMP Z04D 48TSOP2 ST03
Contextual Info: OKI Semiconductor MR27V6441L PEDR27V6441L-02-03 Issue Date: April 4, 2005 Preliminary 64M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27V6441L is a 64 Mbit Production Programmed Read-Only Memory, which is configured as 67,108,864 word × 1-bit. The MR27V6441L supports a simple read operation using a single 3.3V power supply

300b tube

Abstract: 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64
Contextual Info: Samsung Proprietary [ Shipping Quantity Information ] As of 2004-03-02 Divide DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM

Z04B

Abstract: MARK Z04D
Contextual Info: FEDR27T1641L-02-H1 ＯＫＩ Semiconductor MR27T1641L This version : Feb.28, 2005 Previous version: -.- 8M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27T1641L is a 16 Mbit Production Programmed Read-Only Memory, which is configured as

54TSOP2

Contextual Info: PACKAGE DIMENSIONS CMOS DRAM PLASTIC THIN S M A LL OUT-LINE P A C K A G E TYPE II 44TSOP2-400F Unit : Millimeters #44 fl RFi fl ñR T lf HöHHb #1 0.005'to.oai & -M A X 1.20 18.41«o.io 0.725 «00S4 .y 0.047 1.00»o.io 0.039* 0 .00« TTnOTTOTPTÜTOOTÜ ,0 .605'

em 288

Contextual Info: KM432S2030C CMOS SDRAM 2M X 32 SDRAM 512K X 32bit X 4 Banks Synchronous DRAM LVTTL Revision 1.3 June 1999 Samsung Electronics reserves the right to change products or specification without notice. REV. 1.3 Jun. '99 H £ c w .a m c s KM432S2030C CMOS SDRAM

Contextual Info: Advance Information Synch. MROM KM23SV64205T 2Mx32 Synchronous MASKROM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Address: Row address: RA0 ~ RA12 Column address: CA0 ~ CA7 x32 : CA0 ~ CA8 (x16)

Contextual Info: Advance Information Synch. MROM K3S7V2000M-TC 2Mx32 Synchronous MASKROM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Address: Row address: RA0 ~ RA12 Column address: CA0 ~ CA7 x32 : CA0 ~ CA8 (x16)

Z04B

Abstract: MARK Z04D
Contextual Info: OKI Semiconductor MR27V1641L FEDR27V1641L-02-H1 Issue Date: April 21, 2006 16M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27V1641L is a 16 Mbit Production Programmed Read-Only Memory, which is configured as 16,777,216 word × 1-bit. The MR27V1641L supports a simple read operation using a single 3.0V or 3.6V power

Z04B

Abstract: MARK Z04D Z04D so-8 mark a18 MR27V3241L 40DIP 48TSOP2 CODE z04a
Contextual Info: OKI Semiconductor MR27V3241L FEDR27V3241L-02-H2 Issue Date: April 4, 2005 32M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27V3241L is a 32 Mbit Production Programmed Read-Only Memory, which is configured as 33,554,432 word × 1-bit. The MR27V3241L supports a simple read operation using a single 3.3V power supply

KM432S2030C

Contextual Info: KM432S2030C CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 March 1999 Samsung Electronics reserves the right to change products or specification without notice. -1- REV. 1.1 Mar. '99 KM432S2030C CMOS SDRAM Revision History

K3S7V2000M-TC

Abstract: K3S7V2000M-TC10 K3S7V2000M-TC12 K3S7V2000M-TC15 K3S7V2000M-TC20 K3S7V2000M-TC30 RA12
Contextual Info: K3S7V2000M-TC Synch. MROM 64M-Bit 4Mx16 /2Mx32 Synchronous MASKROM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Address: Row address: RA0 ~ RA12 Column address: CA0 ~ CA7 (x32): CA0 ~ CA8 (x16)

KM432S2030C

Contextual Info: KM432S2030C CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.3 June 1999 Samsung Electronics reserves the right to change products or specification without notice. -1- REV. 1.3 Jun. '99 KM432S2030C CMOS SDRAM Revision History

K4S643232C

Abstract: K4S643232
Contextual Info: K4S643232C CMOS SDRAM 512K x 32Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the

Contextual Info: K4S643232E-TI/P CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Industrial Temperature Revision 1.0 January 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 Jan. 2001 K4S643232E-TI/P

Contextual Info: K4S643234E-TE/N CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Extended Low Power 2.5V Revision 1.0 January 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 (Jan. 2001) K4S643234E-TE/N

Contextual Info: K4S643232E CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.0 October 2000 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 Oct. 2000 K4S643232E CMOS SDRAM Revision History

K4S643232C

Contextual Info: K4S643232C CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 November 1999 Samsung Electronics reserves the right to change products or specification without notice. -1- REV. 1.1 Nov. '99 K4S643232C CMOS SDRAM Revision History

44-SOP-600

Abstract: 86-TSOP2-400 44-TSOP2-400
Contextual Info: PACKAGE DIMENSIONS 32-DIP-600 #32 #17 n n n n n n n n n n n n n n n n 13.60± o.2q 0.535±o.eoe y o O o i_ I L J ' U U L 1 U U D L 3 U U U U U #1 UT_J #16 0 -1 5 ° 243 n kí »i ELECTRONICS Un* : mm/inch 244 ELECTRONICS 80INWU3313 ELECTRONICS s Pic» « Il

AR19

Abstract: KM23SV32205T-15 KM23SV32205T-20 KM23SV32205T-30 RA12
Contextual Info: KM23SV32205T Synch. MROM 1M x32 Synchronous MASKROM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Switchable organization 2,097,152 x 16 word mode / 1,048,576 x 32(double word mode) • All inputs are sampled at the rising edge of the system clock

KM23SV32205T-15

Abstract: KM23SV32205T-20 KM23SV32205T-30 RA12
Contextual Info: Preliminary Synch. MROM KM23SV32205T 1M x32 Synchronous MASKROM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Switchable organization 2,097,152 x 16 word mode / 1,048,576 x 32(double word mode)

KM23SV64205T-10

Abstract: KM23SV64205T-12 KM23SV64205T-20 RA12
Contextual Info: Advance Information Synch. MROM KM23SV64205T 2Mx32 Synchronous MASKROM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Address: Row address: RA0 ~ RA12 Column address: CA0 ~ CA7 x32 : CA0 ~ CA8 (x16)

Contextual Info: Preliminary Synch. MROM KM23SV32205T 1M x32 Synchronous MASKROM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL com patible with m ultiplexed address • Sw itchable organization 2,097,152 x 16 word mode / The KM 23SV32205T is a synchronous high bandwidth mask

Contextual Info: KM432S2030C CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.0 March 1999 Samsung Electronics reserves the right to change products or specification without notice. -1- REV. 1.0 Mar. '99 KM432S2030C CMOS SDRAM Revision History