85LLX Search Results

32PIN

Abstract: CXK5V81000ATM TSOP032-P-0820-A
Contextual Info: CXK5V81000ATM -85LLX/10LLX 131072-word x 8-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description The CXK5V81000ATM is a high speed CMOS static RAM organized as 131072-words by 8-bits. A polysilicon TFT cell technology realized

P0820A

Abstract: 32PIN CXK5V8512TM
Contextual Info: CXK5V8512TM -85LLX/10LLX 65536-word x 8-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description The CXK5V8512TM is a high speed CMOS static RAM organized as 65536-words by 8-bits. A polysilicon TFT cell technology realized

CXK5825

Abstract: CXK58257 *k58257a S0P-28P-L05
Contextual Info: SONY. CXK58257AP/ASP/AM-70LLX/85LLX/1OLLX/12LLX ^lx/,olx/,2 l x 32768-word x 8-bit High Speed CMOS Static RAM Description CXK58257AP 28 pin DIP Plastic CXK58257AP/ASP/AM is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits and operates from a single 5V supply. This device is

icc3

Abstract: CXK5V16100TM
Contextual Info: CXK5V16100TM -85LLX/10LLX 65536-word x 16-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description CXK5V16100TM is a general purpose high speed CMOS static RAM organized as 65536-words by 16-bits. Operating on a single 3.3V supply, this

CXK58257AM-70LL

Abstract: SONY 171 CXK58257AP
Contextual Info: S ony. CXK58257AP/AM -70LLX/85LLX/1OLLX/12LLX] 32768-word x 8-bit High Speed CMOS Static RAM Description CXK58257AP 28 pin DIP Plastic CXK58257AP/AM is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits and operates from a single 5V supply. This device is suitable

Contextual Info: CXK58257ATM/AYM -70LLX/85LLX/1OLLX/12LLX SONY, 32768-word x 8-bit High Speed CMOS Static RAM D escription CXK58257ATM/AYM is a 256K bits, 32,768 words by 8 bits, CMOS static RAM. It is suitable for portable and battery back-up systems which require extremely small package and low stand-by

28P-1

Contextual Info: SONY C X K 5 8 2 5 7 A T M /A Y M o^ 5lx/ olx/ 2lx -70LLX/85LLX/1OLLX/12LLX 32768-word x 8-bit High Speed CMOS Static RAM D escription C X K 5 825 7A T M /A Y M is a 25 6K bits, 32 ,7 6 8 words by 8 bits, C M O S static RAM. It is suitable for portable and battery back-up systems

Contextual Info: Sony. CXK58257AP/AM -70LLX/85LLX/1OLLX/12LLX -70LXÍ35LX,10LJ<,2LX * 32768-word x 8-bit High Speed CMOS Static RAM Description CXK58257AP 28 pin DIP Plastic CXK58257AP/AM is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits and

Contextual Info: SONY» C X K 5 8 2 5 7 A T M /A Y M o^ 5lx/ olx/i 2lx -70LLX/85LLX/1OLLX/12LLX 32768-word x 8-bit High Speed CMOS Static RAM D escription CXK58257ATM/AYM is a 256K bits, 32,768 words by 8 bits, CMOS static RAM. It is suitable for portable and battery back-up systems

Contextual Info: SONY CXK5V8257BTM/BYM/BM •70LLX/85LLX*/1 OLLX* 32768-word x 8-bit High Speed CMOS Static RAM * Only TSOP available * * Only SOP available D escription The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits.

Contextual Info: SONY. CXK58257ATM/AYM -70LLX/85LLX/1OLLX/12LLX 32768-word x 8-bit High Speed CMOS Static RAM D e s c rip tio n CXK58257ATM/AYM is a 256K bits, 32,768 words by 8 bits, CMOS static RAM. It is suitable for portable and battery back-up systems which require extremely small package and low stand-by

TS0PD2B-P-0000-8

Abstract: cxk58257 TSOP 2313
Contextual Info: S4E SONY. J> m &3Ò23&3 OOD Mb b ? ÔT4 • S O N Y ?^ y é - i CXK58257ATM/AYM -70LLX/85LLX/1OLLX/12LLX 32768-word x 8-bit High Speed CMOS Static RAM Description SONY CORP/COMPONENT CXK58257ATM/AYM is a 256K bits, 32,768 words by 8 bits, CMOS static RAM.

sony cx 168

Contextual Info: 54E So n y. î 03Û23Ô3 DDDMbS? Ì5 S ISONY CXK58257AP/AM -70U</85LX/10LX/12LX -70LLX/85LLX/1OLLX/12LLX * 32768-word x 8-bit High Speed CMOS Static RAM SONY CORP/COMPONENT PRODS Description CXK58257AP/AM is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits and

Contextual Info: SONY CXK5V16100TM - 8 5 L L X /1 Q L L X 65536-word x 16-bit High Speed CMOS Static RAM Description C X K 5V 1 610 0T M is a general purpose high speed C M O S static R A M organized as 6 5 53 6-w o rd s by 16-bits. Operating on a single 3.3 V supply, this

Contextual Info: SONY CXK5V81OOOATM -8 5 L L X /1 0 L L X 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5V81000ATM is a high speed CMOS static RAM organized as 131072-words by 8-bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data

Contextual Info: SONY. CXK5 8 2 5 7 AP/ASP/AM:S¡SIS«l1l 2¿ Í2l l x 32768-word x 8-bit High Speed CMOS Static RAM Description CXK58257AP 28 pin DIP Plastic CXK58257AP/ASP/AM is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits and operates from a single 5V supply. This device is

cx20185

Abstract: UHF FM Transceiver motorola 5118 motorola 5118 uhf CXA1446S Sony Semiconductor ILX511 CXA1691 CXA1733M CXA1619S SONY ICX
Contextual Info: Sony Semiconductor 96.10 Sony Semiconductor Product List ’96 – 10 TABLE OF CONTENTS MEMORY CMOS/Bi-CMOS SRAM . 1 • LINEUP . 1

sony 58257

Abstract: K58257A QD02b tnc 58 CXK58257AP CXK58257AM
Contextual Info: SONY C O R P / C O M P O N E N T PR OP S MTE T> • fi3fi23fi3 0 0 D 2 bD 7 4 «SONY SONY CXK58257AP/ASP/AM70L L ^ 85L ^ ^ L X / * 2L L X ¿ ^ 7 ~ / 4 32768-word x 8 -b 8t High Speed CMOS Static RAM Description CXK58257AP 28 pin D IP (Plastic CXK58257AP/ASP/AM is 262,144 bits high speed

Contextual Info: SONY CXK5V8512TM 65536-word x - 8 5 L L X /1 0 L L X 8-bit High Speed CMOS Static RAM Description The CXK5V8512TM is a high speed CMOS static RAM organized as 65536-words by 8-b'rts. A polysilicon TFT cell technology realized extremely low stand-by current and higher data

Contextual Info: x CXK582000TM/YM/M -85LL/10LL 262144-word x 8-bit High Speed CMOS Static RAM Preliminary Description The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data