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    cep4060al

    Abstract: No abstract text available
    Text: March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 15 A , R ds ON =80iti Q D @ V gs =10V. R ds(on)=85itiQ @ V gs =5.0V. • Super high dense cell design for extremely low Rds(on). • High power and current handling capability.


    OCR Scan     		PDF 85itiQ O-220 O-263 to-263 to-220 CEP4060ALR/CEB4060ALR cep4060al