8550S* TRANSISTOR Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8550S PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 2 1 SOT-23  DESCRIPTION The UTC 8550S is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier

8550SL

Abstract: transistor marking B9 MARKING B9 sot-23 8550S UTC 8550SL
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8550S PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 1 2 SOT-23 FEATURES *Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complimentary to 8550S 1 TO-92 *Pb-free plating product number: 8550SL

8550SG

Abstract: 8550SL transistor 8550S UTC 8550SL 8050S 8550S UTC8550S PNP transistor 8050S pnp low saturation transistor sot23
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8550S PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 2 1 SOT-23 „ DESCRIPTION The UTC 8550S is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier

B9D TRANSISTOR

Abstract: PNP Transistor b9d SOT-23 marking B9D 8550SL marking b9d UTC 8550SL PNP transistor 8050S 8550SG sot 23 b9_d UTC8550S
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8550S PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 2 1 SOT-23 „ DESCRIPTION The UTC 8550S is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier

8550S

Abstract: 8550s* Transistor
Contextual Info: 8550S 8550S TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM: 0.625 1.EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current ICM: -0.5 A Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range 3.BASE 1 2 3 TJ, Tstg: -55℃ to +150℃

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8550S PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 2 1 SOT-23  DESCRIPTION The UTC 8550S is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier

E8550S

Abstract: transistor 8550S
Contextual Info: 8550S PNP SILICON TRANSISTOR LOW V OLT AGE H I GH CU RREN T SM ALL SI GN AL PN P T RAN SI ST OR 3 1 2 SOT-23 ̈ DESCRI PT I ON The UTC 8550S is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier and general purpose applications.

8050S

Abstract: D 8050s 8050S Transistor NPN transistor 8050s 8050s equivalent Transistor 8050s ic 8050s 8550S he 8050s
Contextual Info: 8050S Semiconductor NPN Silicon Transistor Description • Medium power amplifier • Large collector current : ICMax.=700mA • Low collector saturation voltage enabling low-voltage operation Features • Center collector pin type • Complementary pair with 8550S

8550S

Abstract: transistor 8550S 8050S
Contextual Info: 8550S Semiconductor PNP Silicon Transistor Description • Medium power amplifier • Large collector current : ICMax.=-700mA • Low collector saturation voltage enabling low-voltage operation Features • Center collector pin type • Complementary pair with 8050S

transistor 8550S

Abstract: 8550S 500ma 40v pnp
Contextual Info: PNP TRANSISTOR 8550S -0.5A Power Dissipation: 0.625W Collector Current: -0.5A Collector-Base Voltage: -45V TO-92 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS SYMBOL MIN TYP MAX UNIT CONDITION Collector-Emitter Breakdown Voltage BVceo

8050S Transistor

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 8050S TRANSISTOR NPN FEATURES 1.EMITTER z Complimentary to 8550S z Collector Current: IC=0.5A 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM: 0.625 1.EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current -0.5 A ICM: Collector-base voltage -40 V V(BR)CBO:

Contextual Info: 8050S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LID . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * Complement to 8550S * Collector C urrent: Ic=500mA * Collector D issipation: Pc=225mW Tc=25°C ABSOLUTE MAXIMUM RATINGS a t Tan*-25°C

NPN transistor 8050s

Abstract: 8050S 8550S
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050S TO-92 TRANSISTOR NPN FEATURES z Complimentary to 8550S z Collector current: IC=0.5A 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol

8550S

Contextual Info: 8550S PNP TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearity MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25

DUAL TRANSISTOR

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD IMZ88 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR  FEATURES *Both a 8550S chip and 8050S chip in a SMT package EQUIVALENT CIRCUITS  (6) (5) TR1 TR2 (1)  (4) (2) (3) ORDERING INFORMATION Ordering Number Note: 

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 8550S TRANSISTOR PNP FEATURE Excellent hFE linearity 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit

Contextual Info: TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM: 0.625 1.EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current -0.5 A ICM: Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD IMZ88 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR „ FEATURES *Both a 8550S chip and 8050S chip in a SMT package „ EQUIVALENT CIRCUITS (6) (5) (4) TR2 TR1 (1) „ (2) (3) ORDERING INFORMATION Ordering Number Lead Free Halogen Free

Contextual Info: 8550S PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 4.5±0.2 Power dissipation 0.625 W Tamb=25 C 14.3 ±0.2 PCM: Collector current ICM: 3.5 ±0.2 4.55±0.2 FEATURES

8050S

Abstract: 8550S IMZ88
Contextual Info: UTC IMZ88 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES *Both a 8550S chip and 8050S chip in a SMT package APPLICATIONS *Class B push-pull audio amplifier *General purpose applications MARKING 4 5 EQUIVALENT CIRCUITS 6 4 (5) (6) SOT-26 Tr2 Z 8

he 8050s

Abstract: transistor marking B9 MARKING B9 sot-23 8550SL UTC 8550SL
Contextual Info: UNISONIC TECHNOLOGIES CO., 8550S PNP EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR FEATURES 2 1 *Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complimentary to 8050S 3 MARKING SOT-23 B9 *Pb-free plating product number: 8550SL

Contextual Info: 8550S SEM ICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER Package: SOT-23 * Complement to 8050S * Collector Current: Ic=-500mA * Collector D issipation: Pc=225mW Ta=25°C ABSOLUTE M AXIMUM R ATINGS a t Tan*-2$ C

8050S

Contextual Info: 8050S NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 1.25MAX 3. BASE 2.92 MIN 12.7 6.35 MIN MIN 0.41 0.41 0.53 0.48 Seating Plane Features Complimentary to 8550S Collector current: IC=0.5A 3.43 MIN 2.41 2.67 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)