852 D TRANSISTOR Search Results

NPN transistor mhz s-parameter

Abstract: transistor c 2316
Contextual Info: S 852 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, low current, low voltage, high gain, 50 Ohm transistor for 945 MHz cordless telephone, pager, and low current UHF remote control applications. Features D Low supply voltage

BLF177

Abstract: philips ET-E 60 4312 020 36642 2222 030 capacitor philips MARKING H3B WCA244
Contextual Info: bbS3^31 GOSTfi?1! Philips Semiconductors H3B [A P X Product specification BLF177 HF/VHF power MOS transistor N AMER P H I L I P S / D I S C R E T E b'iE D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control

Philips 2222 capacitor

Abstract: philips capacitor philips capacitor 2222
Contextual Info: Philips Semiconductors bbS 3^31 Q Q S T f i ? 1! T35 M A P X ^ P r o d u c ts p e c ific a tio n HF/VHF power MOS transistor ^ — BLF177 N AMER PHILIPS/DISCRETE b^E D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control

ujt as a relaxation oscillator

Abstract: UJT 2N4851 Unit junction transistor UJT 2N4853 applications of ujt MU851 diode w300 2SC 1387 2N4851 EB20
Contextual Info: MU851 SILICON thru MU853 SILICON ANNULAR UNIJUNCTION TRANSISTORS . . . designed fo r com puter and industrial applications requiring highdensity m ounting. These devices are used in pulse, tim ing, triggering, sensing and oscillator circuits. The annular process provides low leak­

BCW89R

Abstract: BCW89 DSA003674
Contextual Info: SOT23 PNP PLANAR SMALL SIGNAL TRANSISTORS BCW89 ISSUE 2 – FEBRUARY 1995 PARTMARKING DETAILS – DIM E C B Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059

BCW70R

Abstract: BCW69R BCW69 BCW70 720 sot23 DSA003673
Contextual Info: SOT23 PNP PLANAR SMALL SIGNAL TRANSISTORS BCW69 BCW70 BCW69 BCW70 ISSUE 2 – FEBRUARY 1995 PARTMARKING DETAILS – DIM E C B Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085

ZTX618

Abstract: ZTX718 DSA003771
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX618 THERMAL CHARACTERISTICS PARAMETER SYMBOL Thermal Resistance: Junction to Ambient1 Junction to Ambient2 Rth j-amb 1 Rth(j-amb)2 † MAX. UNIT 175 116 °C/W °C/W 180 160 D=1(D.C.) t1 120 100 tP D=t1

MJE 280 power transistor

Abstract: ZTX1048A transistor bf 494 ZTX 450 F 1048A NPN Transistor 10A 100V DSA003762 136E-12
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1048A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu D=0.1 0.50 ra pe 80 60 m te D=0.5 0.75 t en bi tp 120 Am Max Power Dissipation - Watts D=1(D.C) 160 100 ISSUE 3 – FEBRUARY 1995

ZTX1053A

Abstract: BF 245 A spice ztx1053a datasheet NC176 BF600 bf 245 spice 1053A ZTX1053 zetex transistor to92 21E12
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1053A t1 140 D=t1 tp D=0.2 D=0.1 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu 60 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 m te D=0.5 0.75 t en bi tp 120 Am

ztx1056A

Abstract: BF600 ztx1056 DSA003763
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1056A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance Derating curve

tf600

Abstract: IC4a ZTX1051A DSA003762
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1051A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu D=0.1 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 60 m te D=0.5 0.75 t en bi tp 120 Am

bf500

Abstract: ZTX1055A 161627 DSA003762
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance Derating curve

Contextual Info: OBSOLETE - PLEASE USE ZTX855 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1056A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance

TF-450

Abstract: BF 494 C ztx 450 ZTX1047A transistor bf 494 bf550 DSA003761
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1047A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible re tu D=0.1 0.50 ra pe 80 60 C B m te D=0.5 0.75 t en bi tp 120 Am

Contextual Info: Philips Semiconductors ^53= 131 0030 1 2 b TO? • APX ^roductspecjfjcat^ UHF power MOS transistor BLF544 N AUER PHILIPS/DISCRETE FEATURES b'iE D PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability / • Gold metallization ensures

2SB827

Abstract: 2SD1063 SC-65
Contextual Info: 2SD1063 NPN PLANAR SILICON TRANSISTOR SC-65 ! PSW / D / DDC ! COMPLEMENTARY TO 2SB827 ABSOLUTE MAXIMUM RATING TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation Junction Temperature

philips ferroxcube 4c6

Abstract: ferroxcube 4322 020 97171 68w transistor transistor 68W MCA264 choke marking nb 03 FERROXCUBE 4330 BLF175 ferroxcube 4322 M11 marking transistor
Contextual Info: Philips Semiconductors Product specification HF/VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES 7 ^ 3 1 -// SbE D I 7110Û2L BLF175 DGM3712 2Ô2 « P H I N PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control

ZBD849

Abstract: transistor bf 970
Contextual Info: NPN SILICON PLANAR POWER TRANSISTOR ZBD849 THERMAL CHARACTERISTICS PARAMETER Thermal Resistance Junction To Ambient Junction To Case SYMBOL MAX UNIT Rth j-amb Rth(j-case) 75 7 °C/W °C/W ZBD849 PROVISIONAL DATASHEET ISSUE A – MARCH 94 FEATURES * Fast switching

ztx1049a

Abstract: DSA003762
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1049A t1 140 D=t1 tp D=0.1 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu 60 0.50 ra pe D=0.2 m te D=0.5 80 0.75 t en bi tp 120 Am Max Power Dissipation - Watts D=1(D.C) 160 100 ISSUE 1 – JUNE 1995

BLF177

Abstract: SOT121 Package 727 Transistor power values 2222 122 capacitor philips transistor marking code HF MGP100 2222 632 series capacitor 2222 852 47103
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF177 HF/VHF power MOS transistor Product specification File under Discrete Semiconductors, SC08a September 1992 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF177 PIN CONFIGURATION

ferroxcube 4322 020 97171

Abstract: philips ferroxcube 4c6 D1 Marking SOT123 BLF175 RF transistor marking code Mt UBB0711 bje resistor MCA264 CA-272 ferroxcube 4322
Contextual Info: P h n ip ^ e m ic o n d u c to i^ ^ ^ ^ • b b5 3 T 31 □□2 T6 bM 4□4 WÊ A P X Product specification HF/VHF power MOS transistor BLF175 N AMER P H I L I P S / D I S C R E T E FEATURES • • • • • • PIN CONFIGURATION High power gain Low intermodulation distortion

2SB827

Abstract: 2SD1063 SC-65
Contextual Info: 2SB827 PNP PLANAR SILICON TRANSISTOR SC-65 ! PSW / D / DDC ! COMPLEMENTARY TO 2SD1063 ABSOLUTE MAXIMUM RATING TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation Junction Temperature

transistor dk qq

Contextual Info: DISCRETE SEMICONDUCTORS [Mm SMEET BLF177 HF/VHF power MOS transistor 1998 Jul 02 Product specification Supersedes data of September 1992 File under Discrete Semiconductors, SC08a Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification

Contextual Info: bbSa^El ODETBbM 404 « A P X Philips Semiconductors Product specification HF/VHF power MOS transistor — BLF175 N AMER PHILIPS/DISCRETE FEATURES b'JE D PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability