836 DIODE CURRENT Search Results

650nm 5mw laser module

Abstract: 650NM laser diode 5mw QL65D6SA QSI 650 QL65
Contextual Info: QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65D6SA Signature of Approval Approvaed by Checked by Issued by Approval by Customer 315-9, Chunheung-ri, Sungger-eup, Chunan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65D6SA InGaAlP Laser Diode

850nm 5mw laser diode

Abstract: 1550 laser diode B 1359 Dual Wave laser diode 1550 communication laser diode 1550nm communication laser diode 1550nm laser diode Laser Diode 850nm 1300nm laser diode 1550 nm SMJ-3S3A-1300
Contextual Info: 219 Westbrook Rd, Carp, ON, Canada, K0A 1L0 Toll Free: 1-800-361-5415 Tel: 613 831-0981 Fax:(613) 836-5089 E-mail: sales@ozoptics.com VISOR TM BASED DUAL LASER DIODE SOURCE Features: • Dual wavelength laser diode sources, with interchangeable modules: four

HSC276A

Contextual Info: HSC276A Silicon Schottky Barrier Diode for Mixer REJ03G0600-0100 Previous: ADE-208-836 Rev.1.00 Apr 13, 2005 Features • High forward current, Low capacitance. • Ultra small Flat Lead Package (UFP) is suitable for surface mount design. Ordering Information

Contextual Info: HSC276A Silicon Schottky Barrier Diode for Mixer REJ03G0600-0100 Previous: ADE-208-836 Rev.1.00 Apr 13, 2005 Features • High forward current, Low capacitance. • Ultra small Flat Lead Package (UFP) is suitable for surface mount design. Ordering Information

OZ Optics Fiber pigtail AR coating

Abstract: Laser Diode 1550nm 1300nm 1550nm laser diode Radial sma OPTICAL FIBER LDC-21A laser coupler LASER DISTANCE METER SMA 905 fiber dimensions laser diodes for optical source lens laser diode
Contextual Info: OZ OPTICS LTD. 219 WESTBROOK RD, CARP, ON, CANADA, K0A 1L0 TEL: 613 831-0981 FAX: (613) 836-5089 E-MAIL: sales@ozoptics.com WEBSITE: www.ozoptics.com LASER DIODE TO FIBER COUPLERS A: 0.708" B: 0.552" D: 0.275" L: 0.650" L Ø: 0.086" Lens A B Laser Diode

HSC276A

Abstract: DSA003644
Contextual Info: HSC276A Silicon Schottky Barrier Diode for Mixer ADE-208-836 Z Rev. 0 Feb. 2000 Features • High forward current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code

HSC276A

Abstract: Hitachi DSA0047
Contextual Info: HSC276A Silicon Schottky Barrier Diode for Mixer ADE-208-836 Z Rev 0 Feb. 2000 Features • High forward current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code

peltier driver

Abstract: SMA905 1550nm led diode Peltier 1550 laser diode sLED 1550nm 2 Wavelength Laser Diode LED 1550nm peltier cooler SMA-905
Contextual Info: OZ OPTICS LTD. 219 WESTBROOK RD, CARP, ON, CANADA, K0A 1L0 TEL: 613 831-0981 FAX:(613) 836-5089 E-MAIL: sales@ozoptics.com WEB SITE: www.ozoptics.com FIBER PIGTAILED TEMPERATURE CONTROLLED LASER DIODE HOUSING FEATURES: • • • • • • • • •

Contextual Info: i n FEATURES MODEL I • 2 0 - 6 0 0 MHz U s ■ High Isolation mm ■ +36 dBm 3rd Order Intercepts XFER PIN Diode Transfar Striteli ■ TTL Driver ■ SMA Connectors 2 .00 ± .03 .08 1 .836 — 1.42 j b - ~ Ti l J2 ji J2 Ü PART IDENTIFICATION / 1.50 1.336

600 um laser fiber medical

Abstract: L929 Peltier element L9399 836 DIODE LLD1012E01 836 DIODE current "Peltier element" AL7 1BW CW Laser
Contextual Info: FIBER-OUTPUT CW LASER DIODES L9399 Figure 1: Radiant Output Power vs. Forward Current Typ. 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.4 0.6 0.8 1.0 1.2 ( Top(c) = 20 °C ) 100 Relative Radiant Output Power (%) Radiant Output Power Φe (W) Figure 2: Emission Spectrum (Typ.)

U 806 DI

Abstract: 836 DIODE tp 806
Contextual Info: tSENSITRON SPM6G050-060D SEMICONDUCTOR TECHNICAL DATA DATA SHEET 836, REV. A Three Phase IGBT Bridge, With Gate Drivers & Optical Isolation Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE PARAMETER SYMBOL MI N TYP MAX UNIT IGBT SPECIFICATIONS

836 DIODE

Abstract: pin diode 836 DIODE current AN275 APP275 MAX2265 MAX2266 MAX2269 SMP1321-079 AN-275
Contextual Info: Maxim > App Notes > BASESTATIONS / WIRELESS INFRASTRUCTURE WIRELESS, RF, AND CABLE Keywords: CDMA, cellular band, power amplifier, PAE, power added effiency, power-added effiency, ACPR, cellular-band PA, cell band PA, cell-band PA, power amp Sep 01, 2000 APPLICATION NOTE 275

836 DIODE

Abstract: SPM6G050-060D
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G050-060D TECHNICAL DATA DATA SHEET 836, REV. B Three Phase IGBT Bridge, With Gate Drivers & Optical Isolation Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE PARAMETER SYMBOL MI N TYP MAX UNIT IGBT SPECIFICATIONS

Si4624DY

Abstract: SiP12203 si4624 POWERPAK SO8 mosfet IC MOSFET QG AN607 AN608 SI4622DY Si4642DY
Contextual Info: VISHAY SILICONIX Power ICs and Power MOSFETs Application Note 836 Selection of MOSFETs for DC/DC Synchronous Buck Controllers: SiP12201 Single 10 A Controller and SiP12203 Triple Step Down Controller IC for 2 Synchronous and 1 Linear Power Rail Simon Foley

7660 harris

Abstract: transistor 2n 3906 -338 2N3906 MAX850 SOIC-16 TQ9142 TQ9142B rf power amplifier 850 MHZ Dual PNP Transistor diode 824
Contextual Info: T R I Q U I N T S E M I C O N D U C T O R , I N C . WIRELESS COMMUNICATIONS TQ9142B VD2 TQ9142 VD3 ZO = 50Ω RF OUT RF IN VG1 VG2 VG3 High-Efficiency 3-Stage AMPS Power Amplifier IC GND The TQ9142B is a highly efficient 3-stage power amplifier developed for handsets and

Contextual Info: • f l2 3 5 b 0 5 00^ 13117 5 0 3 S I E M E N S _ ■ PROFET BTS711 L1 Smart Four Channel Highside Power Switch Features • • • • • Overload protection Current limitation Short-circuit protection Thermal shutdown Overvoltage protection

2sk2175

Contextual Info: 2SK2175 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • • L ow on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator. DC-DC converter

BUZ 835

Contextual Info: SIEMENS BUZ 307 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated BUZ 307 CO Type 800 V b 3A ^bs on 3 Í1 Package Ordering Code TO-218AA C67078-S3100-A2 Maximum Ratings Parameter Symbol Continuous drain current Values b 7C = 35 °C

PS 307 5A

Contextual Info: SIEMENS BUZ 307 SIPMOS Power Transistor • N channel • Enhancement mode V=I05-5$ • Avalanche-rated i Pin 1 Pin 2 G Type BUZ 307 Vds 800 V b 3A Pin 3 D S ^DS on Package Ordering Code 3 Si TO-218AA C67078-S3100-A2 Maximum Ratings Parameter Symbol Continuous drain current

ptx1

Abstract: GPS SAW filter
Contextual Info: TQP4M3007 Preliminary data sheet SP3T High Power 2.7V CDMA Antenna Switch Features: • SLP-12 Packaged PHEMT GaAs MMIC Die • Small Footprint 3.0 x 3.0 mm • • Excellent Crossmodulation Performance -100 dBm Typ @ Cellular (PTx1 = 22.5 dBm @ 836 MHz, PTx2 = 22.5 dBm

C67078-A1609-A3

Abstract: 0014fl3b kds 9a
Contextual Info: ÔÛD D • 88D fl23SbQS QQ14Ô34 1 m Z I E G 14 834 D BUZ 88 A SIEMENS AKTIEN6ESELLSCHAF _ Main ratings N-Channel = 800 V Draln-source voltage Vos » 5A Continuous drain current ¡0 Drain-source on-reslstance ^DS on = 1,5 £2 Description

MG200H2CK1

Abstract: tf3s cm7200
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG200H2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain : hj’E=200 Min. (Ic=200A)

Contextual Info: HAT2020R Silicon N Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-439 I 10th. Edition Features • L ow on-resistance • C apable o f 4 V gate drive • Low drive current • H igh density m ounting Outline S O P -8 5 6 7 8 D D D D % 1 ,2 , 3

Contextual Info: TQP4M3007 Preliminary data sheet SP3T High Power 2.7V CDMA Antenna Switch Features: MLP-12 lead 3 x 3 mm Package Outline: • MLP-12 Packaged PHEMT GaAs MMIC Die • Small Footprint 3.0 x 3.0 mm • Excellent Crossmodulation Performance -107 dBm Typ @ Cellular