8276 INTEL Search Results
8276 INTEL Result Highlights (1)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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EN80C188XL-20 |
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80C188XL - MPU Intel 186 CISC 16-Bit |
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8276 INTEL Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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intel 8276
Abstract: 8250 intel "intel 8260" intel d 8276 8276 intel 8258 intel 8252 intel ic 8255 8276 intel 8254 programmable counter
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MCS-51Â MCS-85Â 40-Pin AFN-00224B AFN-00224B intel 8276 8250 intel "intel 8260" intel d 8276 8276 intel 8258 intel 8252 intel ic 8255 8276 intel 8254 programmable counter | |
Contextual Info: i n t e T 8276H SMALL SYSTEM CRT CONTROLLER Programmable Screen and Character Format Dual Row Buffers Single + 5V Supply 6 Independent Visual Field Attributes 40-Pin Package Cursor Control 4 Types 3 MHz Clock with 8276-2 MCS-51 , MCS-85®, iAPX 86, and iAPX |
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8276H 40-Pin MCS-51Â MCS-85Â 8276H | |
E67349
Abstract: TLP597G VDE0884
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TLP597G TLP597G EN60065 EN60950 UL1577, E67349 E67349 VDE0884 | |
11-5B2
Abstract: TLP227G TLP227G-2
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TLP227G TLP227G-2 TLP227G, TLP227G 120mA EN60065 11-5B2 TLP227G-2 | |
Contextual Info: TOSHIBA TLP597G TOSHIBA PHOTOCOUPLER PHOTO RELAY TLP597G Unit in mm CORDLESS TELEPHONE PBX MODEM Ti6 The TOSHIBA TLP597G consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a six lead plastic DIP package DIP6 . The TLP597G is a bi-directional switch which can replace mechanical |
OCR Scan |
TLP597G TLP597G UL1577, E67349 EN60065 EN60950 | |
E67349
Abstract: TLP597G
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TLP597G TLP597G EN60065 EN60950 UL1577, E67349 E67349 | |
BPW85C
Abstract: 416 npn phototransistor 8277 bpw 104 BPW85 BPW85A BPW85B Silicon NPN Phototransistor
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BPW85A, BPW85B, BPW85C 2002/95/EC 2002/96/EC BPW85 18-Jul-08 BPW85C 416 npn phototransistor 8277 bpw 104 BPW85A BPW85B Silicon NPN Phototransistor | |
Contextual Info: TOSHIBA TLP227G,TLP227G-2 T O SH IB A PHO TOCO UPLER PHOTO RELAY TLP227G, TLP227G-2 CORDLESS TELEPHONE PBX MODEM The TOSHIBA TLP227G series consist of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a plastic DIP package. |
OCR Scan |
TLP227G TLP227G-2 TLP227G, TLP227G EN60065 | |
11-5B2
Abstract: TLP227G TLP227G-2
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TLP227G TLP227G-2 TLP227G, TLP227G 120mA EN60065 11-5B2 TLP227G-2 | |
11-5B2
Abstract: E67349 EN60747-5-2 TLP227G TLP227G-2
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TLP227G TLP227G-2 TLP227G TLP227G, TLP227G-2 11-5B2 E67349 EN60747-5-2 | |
Contextual Info: BPW85 Vishay Semiconductors Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1 Ø 3 mm clear, plastic package. It is sensitive for visible and near infrared radiation. 20815 |
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BPW85 BPW85 2002/95/EC 2002/96/EC BPW85A BPW85B BPW85C | |
E67349
Abstract: TLP597G VDE0884
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TLP597G TLP597G 120mA 2500Vrms UL1577, E67349 EN60065: EN609osing E67349 VDE0884 | |
Contextual Info: T O SH IB A TLP597G TOSHIBA PHOTOCOUPLER PHOTO RELAY TLP597G Unit in mm CORDLESS TELEPHONE PBX MODEM The TOSHIBA TLP597G consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a six lead plastic DIP package DIP6 . The TLP597G is a bi-directional switch which can replace mechanical |
OCR Scan |
TLP597G TLP597G UL1577, E67349 EN60065 EN60950 | |
10C4
Abstract: TLP227G TLP227G-2 VDE0884 Photocoupler TUV
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TLP227G TLP227G-2 TLP227G: TLP227G-2: 120mA 2500Vrms 10C4 TLP227G-2 VDE0884 Photocoupler TUV | |
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Contextual Info: BPW85 Vishay Semiconductors Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1 Ø 3 mm clear, plastic package. It is sensitive for visible and near infrared radiation. 20815 |
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BPW85 BPW85 2002/95/EC 2002/96/EC BPW85A BPW85B BPW85C | |
BPW85
Abstract: BPW85A BPW85B BPW85C
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BPW85 BPW85 2002/95/EC 2002/96/ECed 08-Apr-05 BPW85A BPW85B BPW85C | |
BPW85
Abstract: BPW85A BPW85B BPW85C Phototransistor bpw 80
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BPW85A, BPW85B, BPW85C 2002/95/EC 2002/96/EC BPW85 11-Mar-11 BPW85A BPW85B BPW85C Phototransistor bpw 80 | |
bpw 104
Abstract: bpw 50 BPW85 BPW85A BPW85B BPW85C
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BPW85 BPW85 2002/95/EC 2002/96/EC 08-Apr-05 bpw 104 bpw 50 BPW85A BPW85B BPW85C | |
Contextual Info: BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
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BPW85A, BPW85B, BPW85C 2002/95/EC 2002/96/EC BPW85 11-Mar-11 | |
Contextual Info: BPW85, BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
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BPW85, BPW85A, BPW85B, BPW85C BPW85 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
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BPW85A, BPW85B, BPW85C 2002/95/EC 2002/96/EC BPW85 2002/95/EC. 2011/65/EU. JS709A | |
bpw85cContextual Info: BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
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BPW85A, BPW85B, BPW85C 2002/95/EC 2002/96/EC BPW85 2011/65/EU 2002/95/EC. 2011/65/EU. bpw85c | |
Contextual Info: TLP227G,TLP227G−2 TOSHIBA Photocoupler Photo Relay TLP227G,TLP227G−2 Cordless Telephone PBX Modem Unit in mm The TOSHIBA TLP227G series consist of a gallium arsenide infrared emitting diode optically coupled to a photo−MOS FET in a plastic DIP package. |
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TLP227G TLP227Gâ TLP227G: 120mA 2500Vrms | |
Contextual Info: BPW85, BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
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BPW85, BPW85A, BPW85B, BPW85C BPW85 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A |