8127H Search Results

8127H

Contextual Info: 8127H Series HM62W9127H Series 131072-word The Preliminary x 8/9-bit High Speed CMOS Static RAM H M 6 2 W 8 12 7 H / H M 6 2 W 9 12 7 H is an Ordering Information a syn cro n o u s 3.3 V o p e ra tio n h ig h speed sta tic Type No. Access time HM 62W 8127HJP-25

Contextual Info: 8127H Series HM62W9127H Series Preliminary 131072-word x 8/9-bit High Speed CMOS Static RAM T he H M 62W 8127H /H M 62W 9127H is an asyncronous 3.3 V operation high speed static RAM organized as 128 kword x 8/9 bit. It realize high speed access tim e 25/30/35/45 ns with

zia9a

Abstract: 922z
Contextual Info: 8127H / HM62W9127H Series 131,072-word x 8/9-bit High Speed CMOS Static RAM HITACHI T he H M 62W 8127H /H M 62W 9127H is an asynchronous 3.3 V operation high speed static RAM organized as 131,072-word x 8/9-bit. It realize high speed access time 30/35/45 ns with

Contextual Info: 8127H Series HM62W9127H Series 131072-word x 8/9-bit High Speed CMOS Static RAM HITACHI Rev. 0.0 Dec. 1, 1995 Description The 8127H/HM62W9127H is an asynchronous 3.3 V operation high speed static RAM organized as 131,072-word 8/9-bit. It realize high speed access time 30/35/45 ns with employing 0.8 (Am CMOS

Contextual Info: 8127HB Series 131072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-414 A (Z) Preliminary Rev. 0.1 Jul. 18, 1996 Description The 8127HB is an asyncronous high speed static RAM organized as 128-k word X 8-bit. It realize high speed access time (25/30 ns) with employing 0.8 (Am shrink CMOS process and high speed

27C256AG

Abstract: 671400H 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A
Contextual Info: Line Up o f Hitachi IC M emories Classification Total bit 4M - SRAM- 3 .3 V r — 1M- Voltage Organization word X bit Type 512kx8- 5V - 512k x 8 - n H M 62W 8512A Series 121 H M 628512A Series - 133 H M 628512 S e r ie s . 145 — 1M x4- H M 674100H Series

SLAS721B

Abstract: pj 68 SMD diode
Contextual Info: MSP430F533x www.ti.com SLAS721B – AUGUST 2010 – REVISED AUGUST 2012 MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • 2 • • • • Low Supply Voltage Range: 1.8 V to 3.6 V Ultralow Power Consumption – Active Mode AM : All System Clocks Active: 270 µA/MHz at 8 MHz, 3.0 V, Flash Program

Contextual Info: 8127H Series HM62W9127H Series 131072-word x 8/9-bit High Speed CMOS Static RAM HITACHI Rev. 0.0 Dec. 1, 1995 Description The 8127H/HM62W9127H is an asynchronous 3.3 V operation high speed static RAM organized as 131,072-word X 8/9-bit. It realize high speed access time 30/35/45 ns with employing 0.8 (Am CMOS

Contextual Info: 8127HB Series 1 M High Speed SRAM 128-kword x 8-bit HITACHI ADE-203-414B (Z) Rev. 2.0 Nov. 1997 Description The 8127HB is an asyncronous high speed static RAM organized as 128-k word x 8-bit. It realize high speed access time (25/30 ns) with employing 0.8 (Am shrink CMOS process and high speed circuit

Contextual Info: MSP430F533x SLAS721A – AUGUST 2010 – REVISED SEPTEMBER 2011 www.ti.com MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • 2 • • • • • Low Supply Voltage Range: 1.8 V to 3.6 V Ultralow Power Consumption – Active Mode AM : All System Clocks Active:

Contextual Info: MSP430F533x www.ti.com SLAS721B – AUGUST 2010 – REVISED AUGUST 2012 MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • 2 • • • • Low Supply Voltage Range: 1.8 V to 3.6 V Ultralow Power Consumption – Active Mode AM : All System Clocks Active: 270 µA/MHz at 8 MHz, 3.0 V, Flash Program

Contextual Info: MSP430F5338, MSP430F5336 MSP430F5335, MSP430F5333 www.ti.com SLAS721C – AUGUST 2010 – REVISED AUGUST 2013 Mixed Signal Microcontroller Check for Samples: MSP430F5338, MSP430F5336, MSP430F5335, MSP430F5333 FEATURES 1 • • 23 • • • • Low Supply Voltage Range: 1.8 V to 3.6 V

Contextual Info: MSP430F533x SLAS721A – AUGUST 2010 – REVISED SEPTEMBER 2011 www.ti.com MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • 2 • • • • • Low Supply Voltage Range: 1.8 V to 3.6 V Ultralow Power Consumption – Active Mode AM : All System Clocks Active:

HM62V8512LFP

Abstract: HM53861J M51419 16M dram dram zip 256kx16 m514280 hn27c1024hg 4M DRAM EDO M5241605 HM534253BT
Contextual Info: Memories Dynamic RAMs DRAM Access time ns 60 80 {HM5116100AS/ATS J F.P. 4k refresh -4Mx4 - {HM5116400AS/ATS ] F.P. 4k refresh 1HM51W16400AS/ATS ] F.P. 4k refresh 1HM5117400AS/ATS ] F.P. 2k refresh -3.3V operation- 16M- 70 -16Mx1 -3.3V operation— 2Mx8 -3.3V operation-

F5333

Abstract: SLAS721C
Contextual Info: MSP430F5338, MSP430F5336 MSP430F5335, MSP430F5333 www.ti.com SLAS721C – AUGUST 2010 – REVISED AUGUST 2013 Mixed Signal Microcontroller Check for Samples: MSP430F5338, MSP430F5336, MSP430F5335, MSP430F5333 FEATURES 1 • • 23 • • • • Low Supply Voltage Range: 1.8 V to 3.6 V

Contextual Info: 8127HB Series 131072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-414 Z Preliminary Rev. 0.2 Nov. 19, 1996 Description The 8127HB is an asyncronous high speed static RAM organized as 128-k word x 8-bit. It realize high speed access time (25/30 ns) with employing 0.8 ^.m shrink CMOS process and high speed circuit

F31Z

Abstract: 922z
Contextual Info: 8127H Series HM62W9127H Series 131072-word x 8/9-bit High Speed CMOS Static RAM HITACHI Description The 8127H/HM62W9127H is an asynchronous 3.3 V operation high speed static RAM organized as 131,072-word x 8/9-bit. It realize high speed access time 30/35/45 ns with employing 0.8 fim CMOS

ZZA12

Abstract: hitachi single chip package A13D
Contextual Info: 8127H Series HM62W9127H Series P relim in ary 131072-word x 8/9-bit High Speed CMOS Static RAM T h e H M 6 2 W 8 1 2 7 H /H M 6 2 W 9 1 2 7 H is an asyncronous 3.3 V o p eration high speed static RAM organized as 128 kword x 8/9 bit. It realize high speed access tim e 2 5 /3 0 /3 5 /4 5 ns w ith