8115 TRANSISTOR Search Results

8115, transistor

Abstract: Diode 8115 XR-8101
Contextual Info: XR-8115 C 'E X A R .the analog plus company TM ^ H ia hCHIPSETS IQ " Battery Management . System AFE m Decem ber 1996-1 FEATURES APPLICATIONS • 10-Bit Analog-to-Digital Converter • Battery Management Systems • Reversible Coulomb Counter • Fuel Gauges

CC8115

Abstract: 8115, transistor npn transistor TO92 30v 800ma
Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR CC8115 9AC TO-92 Plastic Package E CB ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage SYMBOL

BA1A4P

Abstract: T108 02-WM RSL AH transistorBA1A4P
Contextual Info: r NEC i? f/ \ T A 5 ? — 57 • 5 /— b Compound Transistor BA1A4P ¡g N P N j : t ? ? * '> T JU S fe t # l 3 V V=7> i> X ? it '• mm) ★ Ri = 10 kQ, R2= 47 kQ) o BN1A4P T è t ~t0 lfe;ki*^#(Ta = 25 °C) II n u s ? 9 ?T 3 W ± . v i ; 7 y 3 u 3 ^ ^ ^

p2111-1

Abstract: 224C1
Contextual Info: RF9906
      
      • CDMA/FM Cellular Systems • General Purpose Down Converter • Supports Dual-Mode AMPS/CDMA • Commercial and Consumer Systems • Supports Dual-Mode TACS/CDMA • Portable Battery Powered Equipment

RF9906

Contextual Info: RF9906 8 CDMA/FM LOW NOISE AMPLIFIER/MIXER Typical Applications • CDMA/FM Cellular Systems • General Purpose Downconverter • Supports Dual-Mode AMPS/CDMA • Commercial and Consumer Systems • Supports Dual-Mode TACS/CDMA • Portable Battery Powered Equipment

e2v ccd60

Abstract: CCD60 CCD60 Back Illuminated
Contextual Info: CCD60 Back Illuminated Electron Multiplying CCD Sensor INTRODUCTION GENERAL DATA 2 The CCD60 is part of the new L3Vision range of products from e2v technologies. This device uses a novel output amplifier circuit that is capable of operating at an equivalent

Contextual Info: 3 CMM5114A Radiation Hardened, High Reliability, CMOS/SOS 1024 Word by 4 Bit LSI Static RAM December 1992 Pinout Features • I t PIN CERAMIC DIP CASE OUTLINE D6, CONFIGURATION 3 TOP VIEW Radiation Hardened to 100KRAD Si • Cosmic Ray Upsst Immunity 2 x 10* Errors/BK Day (TYP)

Contextual Info: FU JITSU CMOS UV ERASABLE 524288-B IT READ ONLY MEMORY M BM 27C512-20-W MBM27C512-25-W A ugust 1988 E d itio n 1.0 CMOS 524288 BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C512 is a high speed 524,288 bit static CMOS erasable

Contextual Info: IH5108 8-Channel Fault Protected CMOS Analog Multiplexer GENERAL DESCRIPTION FEATURES The IH5108 is a dielectrically isolated CMOS monolithic analog multiplexer, designed as a plug-in replacement for the HI548 and similar devices, but adds fault protection to

1H5108

Contextual Info: IH5108 IH5108 HARRIS S E M I C O N D U C T O R 8-Channel Fault Protected CMOS Analog Multiplexer October 1997 GENERAL DESCRIPTION FEATURES The IH5108 is a dielectrically isolated CMOS monolithic analog multiplexer, designed as a plug-in replacement for

3211a

Contextual Info: HARRIS S E N I C O N D S E C T O R so HARRIS S E M I C O N D U C T O R C M M 5 1 1 4 A Radiation Hardened, High Reliability, CMOS/SOS 1024 Word by 4 Bit LSI Static RAM December 1992 Features • IHAS 43 G2 27 1 G G 4 S 3 7 Ü bl3 5ÖE D Pinout 1$ PIN CERAMIC DtP

Contextual Info: CMM5114A HARRIS S E M IC O N D U C T O R Radiation Hardened, High Reliability, CMOS/SOS 1024 Word by 4 Bit LSI Static RAM December 1992 Features Pinout • Radiation Hardened to 100KRAD SI IS P M CERAM IC DIP C A S E OUTLINE D6, CONFIGURATION 3 TOP VIEW • Cosmic Ray Upeet Immunity 2 x 10r Errors/Bit Day (TYP)

a006 mosfet

Abstract: 30420000 fully protected p channel mosfet a006 HI548 HI-548 IH5108 IH5108CPE IH5108IJE IH5108MJE
Contextual Info: IH5108 HARRIS SEniCOND SECTOR 43E T> •I M30S271 0 D 3 b cm P 2 *HAS IH5108 H A R R IS S E M I C O N D U C T O R 8-Channel Fault Protected CMOS Analog Multiplexer GENERAL DESCRIPTION FEATURES The IH5108 is a dielectrically isolated CMOS monolithic analog multiplexer, designed as a plug-in replacement for

MBM27C512-25

Abstract: 27C512-20
Contextual Info: CMOS UV ERASABLE 524288-BIT READ ONLY MEMORY MBM 27C512-20-W MBM27C512-25-W August 1988 Edition 1.0 CMOS524288 BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C512 is a high speed 524,288 b it static CMOS erasable and e lectrically reprogrammable read only memory EPROM}. It is especially

8109a

Contextual Info: 19-1092; Rev 0; 6/96 A I / X I A 1 1-input/6-O utput Video D istribution A m plifiers The MAX4135 achieves a -3dB bandwidth of 185MHz, with 0.1dB gain flatness to 40MHz. The MAX4136's -3dB bandw idth is 140MHz. Both devices deliver a 1000V/ps slew rate, as well as exceptional full-power

Contextual Info: RF2469 Preliminary 8 W-CDMA AND PCS LOW NOISE AMPLIFIER/MIXER DOWNCONVERTER Typical Applications • W-CDMA Handsets • Commercial and Consumer Systems • PCS Handsets • Portable Battery-Powered Equipment • General Purpose Downconverter Product Description

Contextual Info: RF2469 Preliminary  :&'0$ $1' 3&6 /2: 12,6 $03/, ,(50,;(5 '2:1&219(57(5 7\SLFDO $SSOLFDWLRQV • W-CDMA Handsets • Commercial and Consumer Systems • PCS Handsets • Portable Battery-Powered Equipment • General Purpose Downconverter 3URGXFW 'HVFULSWLRQ

njm4200 cross

Abstract: njm making 741 LEM jrc 4200
Contextual Info: ANALOG MULTIPLIER NJM4200 The NJM 4200 is the industry's first integrated circuit multiplier to have com plete com pensation for nonlinearity, the primary source o f error and distortion. This is also the first IC m ustiplier to have three on-board operational am plifiers

Contextual Info: HA7210, HA7211 November 1996 10kHz to 10MHz, Low Power Crystal Oscillator Features Description • Single Supply Operation at 3 2 kH z . 2V to 7V The HA7210 and HA7211 are very low power crystal-controlled oscillators that can be externally programmed to operate

Sharp Semiconductor Lasers

Abstract: AU4A transistor QB tensile-strength thermopile array BREAK FAILURE INDICATOR APPLICATIONS LIST relay failure analysis CRACK DETECTION PATTERNS gold wire bound failures due to ultrasonic cleaning 2n2222 micro electronics
Contextual Info: Application Note Optoelectronics Failure Analysis of Optoelectronic Devices DEFINITIONS • US Military Standard: MIL-STD-883 Method 5003 Failure Analysis Procedures for Microcircuits – Failure analysis is a post-mortem examination of a failed device employing, as required, electrical

v5807

Abstract: ICAN-6086 HA7211 h7210 mx-38 ndk HA7210 HA7210IB HA7211IB AN9334 LM 8105
Contextual Info: HA7210, HA7211 S E M I C O N D U C T O R 10kHz to 10MHz, Low Power Crystal Oscillator November 1996 Features Description • Single Supply Operation at 32kHz . . . . . . . . . . 2V to 7V The HA7210 and HA7211 are very low power crystal-controlled oscillators that can be externally programmed to operate

SOT23-6 AAAE

Abstract: MAX4223 IN-87 la sot23-8 analog MH SOT23-8 av 8114 MAX4223ESA
Contextual Info: 19-1230; Rev 2; 6/97 J V Y Æ X A J V K 1GHz, Low-Power, SO T23, C urrent-Feedback A m plifiers w ith Shutdow n The MAX4223-MAX4228 are ideal for professional video applications, with differential gain and phase errors of 0.01% and 0.02°, 0.1 dB gain flatness of 300MHz, and a

IEC 68-2-63

Abstract: transistors Si 6822 MIL-STD-781 transistors 6822 si MIL-STD-785 MIL-STD-721 The Japanese Transistor Manual 1981 IEC 68-2-28 AND 7411 NATIONAL SEMICONDUCTOR MARKING BM
Contextual Info: STANDARDS AND QUALITY CERTIFICATION FOR QUALITY SYSTEMS, SAFETY, ANDRELIABILITY OF SEMICONDUCTOR DEVICES VIII. STANDARDS AND QUALITY CERTIFICATION FOR QUALITY SYSTEMS, SAFETY, ANDRELIABILITY OF SEMICONDUCTOR DEVICES 1. QUALITY SYSTEM STANDARDS 1.1 INTRODUCTION TO THE ISO 9000 SERIES

2U37

Abstract: H1P transistor with three end QQ 8114 transistor 2N6985 2N6986 M11 marking transistor feedthru cap H1P transistor 4 pr 16 awg 3011 fe
Contextual Info: I INCH-POUND I MIL-S-1950 0/584 25 Ju ly 1990 MILITARY SPECIFICATION prut rniinn rrnn nrwt r r oc.ru ourauuu I UK u l u u , nr- r\Ai ir r\ rnnif»t t t a « Kr ruM CK ik a n ^ i^ iu k , tinti ▼ i ta nu nrnt r\éin i r\in i ru ^ n -ru L L TYPES JANTX. JANTXV. ANO JANS. 2N6985 AND 2N6986