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    80N50P Search Results

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    80N50P Price and Stock

    IXYS Corporation IXFR80N50P

    MOSFETs 500V 80A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFR80N50P 735
    • 1 $25.84
    • 10 $25.83
    • 100 $21.13
    • 1000 $17.12
    • 10000 $17.12
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    TTI IXFR80N50P Tube 300
    • 1 -
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    • 100 -
    • 1000 $20.32
    • 10000 $20.32
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    TME IXFR80N50P 1
    • 1 $25.13
    • 10 $20.21
    • 100 $18.16
    • 1000 $18.16
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    IXYS Corporation IXFN80N50P

    MOSFET Modules 500V 80A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFN80N50P 688
    • 1 $32.19
    • 10 $24.2
    • 100 $22.53
    • 1000 $22.53
    • 10000 $22.53
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    TTI IXFN80N50P Tube 300
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    • 1000 $21.99
    • 10000 $21.99
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    New Advantage Corporation IXFN80N50P 290 1
    • 1 -
    • 10 $25.84
    • 100 $25.84
    • 1000 $25.84
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    Vyrian IXFN80N50P 159
    • 1 -
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    IXYS Corporation IXFK80N50P

    MOSFETs 500V 80A
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    Mouser Electronics IXFK80N50P 142
    • 1 $21.99
    • 10 $21.1
    • 100 $13.69
    • 1000 $13.69
    • 10000 $13.69
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    TTI IXFK80N50P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $13.36
    • 10000 $13.36
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    TME IXFK80N50P 22 1
    • 1 $19.2
    • 10 $19.2
    • 100 $15.04
    • 1000 $14.59
    • 10000 $14.59
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    IXYS Corporation IXFX80N50P

    MOSFETs 500V 80A
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    Mouser Electronics IXFX80N50P 84
    • 1 $22.02
    • 10 $19.57
    • 100 $19.57
    • 1000 $15.97
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    TTI IXFX80N50P Tube 300 30
    • 1 -
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    • 100 $15.05
    • 1000 $13.98
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    TME IXFX80N50P 1
    • 1 $23.49
    • 10 $18.67
    • 100 $16.82
    • 1000 $16.82
    • 10000 $16.82
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    Littelfuse Inc IXFN80N50P

    Mosfet, Module, N-Ch, 500V, 66A; Channel Type:N Channel; Continuous Drain Current Id:66A; Drain Source Voltage Vds:500V; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:700W Rohs Compliant: Yes |Littelfuse IXFN80N50P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXFN80N50P Bulk 72 1
    • 1 $27.74
    • 10 $24.04
    • 100 $22.09
    • 1000 $22.09
    • 10000 $22.09
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    RS IXFN80N50P Bulk 8 Weeks 10
    • 1 -
    • 10 $34.86
    • 100 $34.86
    • 1000 $34.86
    • 10000 $34.86
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    Chip One Stop IXFN80N50P Tube 216 0 Weeks, 1 Days 1
    • 1 $29.9
    • 10 $23.2
    • 100 $20.7
    • 1000 $20.3
    • 10000 $20.3
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    Find more 80N50P price and stock on Findchips.com

    80N50P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    80N50P

    Abstract: IXFK 80N50P PLUS247
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 65 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		80N50P O-264 80N50P IXFK 80N50P PLUS247 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 75 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		80N50P 80N50P O-264 PLUS247 PDF

    80n50

    Abstract: 80N50P ISOPLUS247 4525 GE alize
    Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 500 V = 45 A ≤ 72 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C


    Original     		ISOPLUS247TM 80N50P 80n50 80N50P ISOPLUS247 4525 GE alize PDF

    80N50P

    Abstract: IXFN 80N50P E153432
    Text: IXFN 80N50P Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		80N50P 80N50P IXFN 80N50P E153432 PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM Transient Continuous


    Original     		80N50P PDF

    80N50

    Abstract: 80N50P IXFN 80N50P
    Text: PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM Transient Continuous


    Original     		80N50P 80N50 80N50P IXFN 80N50P PDF

    80N50P

    Abstract: IXFK 80N50P 80N50 PLUS247
    Text: PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGSM VGSM


    Original     		80N50P 80N50P IXFK 80N50P 80N50 PLUS247 PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 500 V = 45 A Ω ≤ 72 mΩ ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		ISOPLUS247TM 80N50P PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 = 500 V = 80 A Ω ≤ 65 mΩ ≤ 200 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C


    Original     		80N50P PDF

    80N50P

    Abstract: ISOPLUS247 PLUS247
    Text: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		ISOPLUS247TM 80N50P ISOPLUS247 E153432 405B2 80N50P ISOPLUS247 PLUS247 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXFN 80N50P Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		80N50P OT-227 E153432 405B2 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p PDF