interfacing of RAM and ROM with 8085
Abstract: LTWF AD7571AQ AD7571 AD7571BQ AD7571KN AD7571SD AD7574 D28B "16-Bit Microprocessors"
Text: ► A N A LO G D E V IC E S CMOS |xP-Compatible 10-Bit Plus Sign ADC AD7571 FE A T U R ES 10-Bit Plus S ig n Resolution N o M isse d Codes Over Full Temperature Range Conversion Time 80fis Differential A n alog Voltage Inputs, ± 10V Range Serial and Parallel Data O utputs
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10-Bit
80fjis
AD7571
AD7571
interfacing of RAM and ROM with 8085
LTWF
AD7571AQ
AD7571BQ
AD7571KN
AD7571SD
AD7574
D28B
"16-Bit Microprocessors"
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IRG4PC50KD
Abstract: No abstract text available
Text: International IÖR Rectifier PD -9.1582A IRG4PC50KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control tsc =1 Ofis, @360V VCE start , T j= 1 2 5 ° C ,
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IRG4PC50KD
IRG4PC50KD
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IRF 860
Abstract: 5056B IRF 150a
Text: , I ,• In ternational I I«R Rectifier PD -5.056B preliminary "HALF-BRIDGE" IGBT INT-A-PAK G A 150TS6 0 U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V ces = 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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150TS6
IRF 860
5056B
IRF 150a
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Untitled
Abstract: No abstract text available
Text: International IOR Rectifie f PD - 5.048B PRELIMINARY "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK GA500TD60U Ultra-Fast Speed IGBT Features V ce s = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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GA500TD60U
1000S
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Untitled
Abstract: No abstract text available
Text: In te r n a tio n a l IQ R R e c tifie r p d p re lim in a ry - s .o bza G A 1 5 0 T D 1 2 0 U "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Fe at ur es V • G en eratio n 4 IG BT te ch n o lo g y • S tan dard : O p tim ize d for m inim um saturation
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10kHz
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a2305
Abstract: A2307 2sk1969 N CH MOSFET
Text: 2SK1969-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ -FAP-IIIA SERIES • Features IOutline Drawings • Hig i current • Low on-resistance • No secondary breakdown • L o v driving power • H ig i forward Transconductance
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2SK1969-01
a2305
A2307
2sk1969
N CH MOSFET
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Untitled
Abstract: No abstract text available
Text: PD -5.046 International TOR Rectifier CPV362M4F IG BTSIP MODULE Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes Optimized for medium operating 1 to 10 kHz
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CPV362M4F
360Vdc,
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VN2410L equivalent
Abstract: VN1210M equivalent VN2410L "cross reference" VN2410M VN0300M equivalent MTM8N20 VN1710M IRF340 IRF350 IRF450
Text: 1-17 MOSPOWER Cross Reference List c « g s s <0J= i n i n m i n • - CM CM CM ^ • 'd d d o d 1o o o o o I m iD lO m | ' r r r 's ' I O O < O Ò I I I I I | ' ' ' lO ' I P ' ' ' ' I I j j CO00 COCO j j ' I o o r i mm | ioom m I L -^ ^ l I c\i CM i I I I I OOOO ' ' I
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ivn6100tnu
to-39
ivn6200cnd
to-220
vn0401d
ivn6200cne
t0-220
irf533
ivn6200cnf
VN2410L equivalent
VN1210M equivalent
VN2410L "cross reference"
VN2410M
VN0300M equivalent
MTM8N20
VN1710M
IRF340
IRF350
IRF450
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Untitled
Abstract: No abstract text available
Text: QUALITY AND RELIABILITY OF OPTOELECTRONIC COMPONENTS Q U A L IT Y A N D R E L IA B IL IT Y C O S T S T he circuit d esigner m ust be aw are o f the expected reliabilty o f the m any d iffere n t com ponents used. T his allow s control o f life cycle costs, such as w arranty costs, repair costs and dow ntim e costs,
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12min.
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TA 8783 N
Abstract: pin IC 8783 n ss 7941 941L
Text: TELEDYNE COMPONENTS 2flE D • fl^Ji7bQH QQQb471 'J J B lT F l CD II ^ J s £ \ ^Z . VN0104, VN0106 SEMICONDUCTOR_VNOIQ9 N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs T‘ *7' u ORDERING INFORMATION TO-226AA TO-92 Plastic Package Sorted Chips In Waffle Pack
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QQQb471
VN0104,
VN0106
O-226AA
VN0104N3
VN0104ND
VN0106N3
VN0106ND
VN0109N&
VN0109ND
TA 8783 N
pin IC 8783 n
ss 7941
941L
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hh 004 TO92
Abstract: VN2406M VN2406L vn1710m VN1206M VN1706M VN2406B siliconix VN10KM VN2410M VN1206L
Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 60 60 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 240 240 170 170 10.0 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35
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vn10ke
vn10le
to-52
vn2406m
vn2410m
VW1706M
vn1710m
vn1206m
vn1210m
vn0808m
hh 004 TO92
VN2406M
VN2406L
vn1710m
VN1206M
VN1706M
VN2406B
siliconix VN10KM
VN2410M
VN1206L
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57-9130
Abstract: VMP4 DV2820W DV28120 DVd030s DV28120V DV2805S DV2805W DV2880T DV2810S
Text: RF Power FETs Selector G uide RF Power FETs Selector Guide Contd 28 Volt DC — 300 MHz Series Rated Power Out (Watts) @ 28V d c Min. Gain (dB) 28 V, 175 MHz Min. BVq s s dJc (°C/W) Part Number Test Frequency* (MHz) DV2805S DV2805W DV2805Z 175 175 175 5
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28Vdc
DV2805S
DV2805W
DV2805Z
DV2810S
DV2810W
DV2810Z
DV2820S
DV2820W
DV2820Z
57-9130
VMP4
DV28120
DVd030s
DV28120V
DV2880T
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RELAY 1ZS
Abstract: VN1706D IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641
Text: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 // 1 / 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150
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IRF640
IRF642
IRF630
IRF632
IRF620
IRF622
VN1706D
IRF641
IRF643
IRF631
RELAY 1ZS
VN1706D
IRF620
IRF622
IRF630
IRF631
IRF632
IRF633
IRF640
IRF641
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VP100
Abstract: VP1001P VP0300B VP0300M VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M
Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 5.0 5.0 2.5 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B 0.37 0.37 0.48 1.0
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VP1008B
VP0808B
VP0300B
O-237Ã
VP1008M
VP0808M
VP0300M
VP1008L
VP0808L
14-Pln
VP100
VP1001P
VP0300B
VP0300M
VP0808L
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GA1030
Abstract: No abstract text available
Text: TMS29F040 524288 BY 8-BIT FLASH MEMORY . • • • • • • • • • • SMJS820B - APRIL 1996 - REVISED NOVEMBER 1997 Single Power Supply 5 V ± 10% - 3.3 V ± 0.3 V - See ’29LF040/ 29VF040 Data Sheet Literature Number SMJS825 - 2.7 V to 3.6 V - See ’29LFO40/'29VFO4O
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SMJS820B
TMS29F040
29LF040/
29VF040
SMJS825)
29LFO40/
29VFO4O
GA1030
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Untitled
Abstract: No abstract text available
Text: IRF330, IRF331y IRF332, IRF333 I ia ttr is sem conduc or 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 4.5A and 5.5A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate
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IRF330,
IRF331y
IRF332,
IRF333
beRF333
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IA17
Abstract: No abstract text available
Text: / T 7 S G S -1H 0M S 0N M29W004T *• 7 /. HBSBEHllgUMWlIgg_ M29W004B 4 Mb x8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY ■ 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME: lO^is typical
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M29W004T
M29W004B
100ns
IA17
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Untitled
Abstract: No abstract text available
Text: International IOR Rectifie f PD - 5.054 GA250TD120U PRELIMINARY "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Fe at ur es — • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses
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GA250TD120U
10kHz
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IRFF121
Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
Text: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150
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IRF640
IRF642
IRF630
IRF632
IRF620
IRF622
VN1706D
IRF641
IRF643
IRF631
IRFF121
IRF620
IRF622
IRF630
IRF631
IRF632
IRF633
IRF640
IRF641
IRF642
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VN90AB
Abstract: 2N6658 VN67AF equivalent 2n6659 equivalent 2SK173 BUZ 20 BUZ33 VN46AF equivalent VN67AF cross reference IRF240
Text: Siliconix 1-1? f l Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170
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O-220
VN1000D
IRF522
VN1000A
IRF540
IRF632
IRF640
VN90AB
2N6658
VN67AF equivalent
2n6659 equivalent
2SK173
BUZ 20
BUZ33
VN46AF equivalent
VN67AF cross reference
IRF240
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VN2410M
Abstract: VN1210M siliconix VN10KM vn10le VN1710m BSR70 BSR72 BSR76 VN1210L VN1710L
Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25 0.25 0.7 1.0 1.0 1.0
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vn10ke
vn10le
to-52
vn2406m
vn2410m
VW1706M
vn1710m
vn1206m
vn1210m
vn0808m
VN2410M
VN1210M
siliconix VN10KM
vn10le
VN1710m
BSR70
BSR72
BSR76
VN1210L
VN1710L
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IRF450 to-92
Abstract: VN2406M siliconix VN10KM VN2410M IRF340 IRF350 IRF440 IRF450 VN1210L IRF820
Text: Ü Ü A C D ^ U /C D M i v i a D r/\W i i v i v ^ i v T T k iv r i i i i i v t iv u v iw i C A lA A ^ /\r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING Packages: I BV qss Volts 45 0-500 TO-3 TO-220 S ilic o n ix
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to-220
to-39
to-237
to-92
to-202
IRF450
IRF840
IRF440
VN5001D/IRF830
VNP002A*
IRF450 to-92
VN2406M
siliconix VN10KM
VN2410M
IRF340
IRF350
VN1210L
IRF820
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SD220HD
Abstract: SD220 s0220 SD220CHP SD221CHP SD221HD Teledyne Semiconductor n fet 60v 0.05a
Text: TELEDYNE COMPONENTS m 2ÖE D fl^tÜS G O O ^ S 2 • SD220, SD221 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FET O R D E R IN G IN F O R M A T IO N Sorted Chips, in Waffle Pack SD220CHP SD221CHP TO-205AF Hermetic Package . SD220HD SD221HD Description
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SD220
SD221
SD220CHP
SD221CHP
O-205AF
SD220HD
SD221HD
SD220
s0220
SD221CHP
SD221HD
Teledyne Semiconductor
n fet 60v 0.05a
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irfp150
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFETS IRFP150/151/152/153 FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRFP150/151/152/153
IRFP150
1000C
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