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    8050 TRANSISTOR Search Results

    8050 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    HIT8050-N-E-Q Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    8050 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sc1815 equivalent

    Abstract: 2SC1312 equivalent of transistor 8050 equivalent of transistor 9014 NPN 2SC1740 equivalent transistor bc 549 equivalent transistor 2sc1312 transistor bc 549 BC337 8050
    Text: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table NPN Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SC1214 HN / BC 337 / 8050 2SC1478 HN / BC 548 / 9014 2SC1707 HN / BC 548 / 9014 2SC1219 HN / BC 337 / 8050


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    PDF To-92 2SC1214 2SC1478 2SC1707 2SC1219 2SC1537 2SC1734 2SC1220 2SC1539 2SC1736 2sc1815 equivalent 2SC1312 equivalent of transistor 8050 equivalent of transistor 9014 NPN 2SC1740 equivalent transistor bc 549 equivalent transistor 2sc1312 transistor bc 549 BC337 8050

    NPN transistor 8050

    Abstract: transistor 8050 transistor b 8050 npn 8050 8050 transistor D 8050
    Text: NPN TRANSISTOR 8050 1.5A Power Dissipation Pcm : 1.0W Collector Current Icm : 1.5A Collector-Base Voltage Vcbo: 45V MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(Ta=25℃) PARAMETERS Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage


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    PDF 100uA 100urrent 1500mA, 500mA NPN transistor 8050 transistor 8050 transistor b 8050 npn 8050 8050 transistor D 8050

    transistor br 8050

    Abstract: NPN transistor 8050d BR 8050 8050d st 8050d 8050C BR 8050D he 8050d BR 8050c 8050c transistor
    Text: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. On special request, these transistors can be manufactured in different pin configurations.


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    PDF 8050C 8050D transistor br 8050 NPN transistor 8050d BR 8050 8050d st 8050d 8050C BR 8050D he 8050d BR 8050c 8050c transistor

    BR 8050 D

    Abstract: NPN transistor 8050d BR 8050 transistor 8550 st 8050d transistor br 8050 8050 TRANSISTOR PNP 8050c 8050 pnp transistor 8050d
    Text: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


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    PDF 100mA BR 8050 D NPN transistor 8050d BR 8050 transistor 8550 st 8050d transistor br 8050 8050 TRANSISTOR PNP 8050c 8050 pnp transistor 8050d

    NPN transistor 8050d

    Abstract: transistor br 8050d 8050c transistor transistor br 8050 NPN transistor 8050C BR 8050 BR 8050 D
    Text: 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


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    PDF 100mA 800mA 800mA, NPN transistor 8050d transistor br 8050d 8050c transistor transistor br 8050 NPN transistor 8050C BR 8050 BR 8050 D

    8050 npn

    Abstract: A12 marking 8050 marking transistor
    Text: BC548LT1 8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION * Complement to BC558LT1 * Collector Current :Ic= 500mA * High Total Power Dissipation :Pc=225mW 1. Rating 2.9 1.9 0.95 0.95 Symbo Unit 0.4


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    PDF BC548LT1 BC558LT1 500mA 225mW 500mA 062in 300uS 8050 npn A12 marking 8050 marking transistor

    NPN transistor 8050d

    Abstract: 8050c transistor BR 8050 D 8050 pnp transistor st 8050d transistor 8050d BR 8550 BR 8050 8050C 8050D
    Text: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


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    PDF 100mA 800mA 800mA, NPN transistor 8050d 8050c transistor BR 8050 D 8050 pnp transistor st 8050d transistor 8050d BR 8550 BR 8050 8050C 8050D

    NPN transistor 8050d

    Abstract: bc 8050 TRANSISTOR 8050 8050 d h 8050 transistor 8050 pin details NPN transistor 500ma TO-92 he 8050 d transistor TRANSISTOR c 8050 transistor b 8050
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 8050 SR13 TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO VALUE 25 UNITS


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    PDF C-120 190505E NPN transistor 8050d bc 8050 TRANSISTOR 8050 8050 d h 8050 transistor 8050 pin details NPN transistor 500ma TO-92 he 8050 d transistor TRANSISTOR c 8050 transistor b 8050

    NPN transistor 8050d

    Abstract: BR 8050 D transistor br 8050 8050c transistor BR 8050 8050c 8050 TRANSISTOR PNP st 8050d BR 8050D 8050 pnp transistor
    Text: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


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    PDF 100mA NPN transistor 8050d BR 8050 D transistor br 8050 8050c transistor BR 8050 8050c 8050 TRANSISTOR PNP st 8050d BR 8050D 8050 pnp transistor

    transistor br 8050

    Abstract: BR 8050 D BR 8050 NPN transistor 8050 PNP 8550 BR 8050 c hFE 8050 transistor b 8050 1/STK 8050 ic
    Text: 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


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    NPN transistor 8050d

    Abstract: BR 8050 D transistor br 8050 st 8050d 8050c 8050 pnp transistor 8050c transistor BR 8050 S 8050 transistor 8050d
    Text: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


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    PDF 100mA 800mA 800mA, NPN transistor 8050d BR 8050 D transistor br 8050 st 8050d 8050c 8050 pnp transistor 8050c transistor BR 8050 S 8050 transistor 8050d

    NPN transistor 8050d

    Abstract: BR 8050 D 8050c transistor transistor BR 8050 st 8050d 8050d BR 8050 TRANSISTOR 8050D transistor S 8050 8050 pnp transistor
    Text: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


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    PDF 100mA 800mA 800mA, NPN transistor 8050d BR 8050 D 8050c transistor transistor BR 8050 st 8050d 8050d BR 8050 TRANSISTOR 8050D transistor S 8050 8050 pnp transistor

    NPN transistor 8050d

    Abstract: BR 8050 D 8050c transistor transistor br 8050 8050 TRANSISTOR PNP 8050c BR 8050 transistor 8050d st 8050d BR 8050D
    Text: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


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    PDF 100mA 800mA 800mA, NPN transistor 8050d BR 8050 D 8050c transistor transistor br 8050 8050 TRANSISTOR PNP 8050c BR 8050 transistor 8050d st 8050d BR 8050D

    st 8050d

    Abstract: NPN transistor 8050d st8050c TRANSISTOR c 8050 transistor br 8050 BR 8050 D BR 8050 transistor b 8050 8050 pnp transistor 8050 TRANSISTOR PNP
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


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    st 8050d

    Abstract: st8050c st8050d BR 8050 D st 8050C 8050c transistor 8050 TRANSISTOR PNP BR 8050 st 8050 8050B
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


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    smd TRANSISTOR 05c sot23

    Abstract: No abstract text available
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR CMBT 8050 SOT-23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3


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    PDF OT-23 C-120 smd TRANSISTOR 05c sot23

    st 8050d

    Abstract: st8050c st 8050C ST8050D transistor b 8050 st 8050 8050B transistor br 8050 transistor 8050d 8050c transistor
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


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    diode st 4148

    Abstract: ST 4148 LL4148 st 8050 sot-23 st 8050 9016 transistor 9014 SOT 23 4148 st TRANSISTOR 4148 1N4001-1N4007
    Text: TRANSISTOR & DIODE Transistor -S T 8050 - 1.5A TO-92 - ST 8050 (TO-92) - ST 8550 - 1.5A (TO-92) - ST 8550 (TO-92) - ST 9011 (TO-92) - ST 9012 (TO-92) - ST 9013 (TO-92) - ST 9014 (TO-92 -S T 9015 (TO-92) - ST 9016 (TO-92) -S T 9018 (TO-92) o - MMBT8050LT1 -1.5A (SOT-23)


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    PDF MMBT8050LT1 OT-23) -LL4001-LL4007 -LL4148 1N4001-1N4007 diode st 4148 ST 4148 LL4148 st 8050 sot-23 st 8050 9016 transistor 9014 SOT 23 4148 st TRANSISTOR 4148

    Untitled

    Abstract: No abstract text available
    Text: 8050 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. NPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION * Complement to 8550 * Collector Current: Ic=1500mA * Collector Dissipation: Pc=lW Ta=25°C


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    PDF 1500mA 100mA 800mA 80QmA 800mA

    8050 NPN

    Abstract: transistor 8050 transistor b 8050 transistor 8550 TRANSISTOR c 8050 8550 NPN Transistor ic 8050
    Text: FORWARD INTERNATIONAL ELBCÏRON1CS L ID . 8050 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION * Complement to 8550 * Collector Current : Ic=1500mA * Collector Dissipation : Pc=l W Ta=25°C


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    PDF 1500mA 100mA 800mA 800mA 8050 NPN transistor 8050 transistor b 8050 transistor 8550 TRANSISTOR c 8050 8550 NPN Transistor ic 8050

    Untitled

    Abstract: No abstract text available
    Text: FORWARD INTERNATIONAL ELECTRONICS LTD. SEMICONDUCTOR TECHNICAL DATA 8550 PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION Package: TO-92 * Complement to 8050 * Collector Current: lc—1.5A * Collector Dissipation Pc=lW TtoF=25°C


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    PDF -100uA 100mA -800mA -800mA -80mA -10mA -50mA

    8050 TRANSISTOR PNP

    Abstract: 8050 8550 8050 pnp transistor transistor 8550 d transistor b 8050
    Text: 8550 GENERAL DESCRIPTION:- ITie 8550 is a PNP epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuits. Complementary to 8050. ABSOLUTE MAXIMUM RATINGS TO-92A Note 1 Maximum Temperatures —55°C to +135°C


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    PDF O-92A 33mW/Â 25mW/Â 100mA Boxfe477, 8050 TRANSISTOR PNP 8050 8550 8050 pnp transistor transistor 8550 d transistor b 8050

    BR 8050 D

    Abstract: transistor br 8050 BR 8050 8050 TRANSISTOR PNP 8050 pnp transistor NPN transistor 8050d transistor b 8050 TRANSISTOR c 8050 80500 TRANSISTOR 8050 d h
    Text: HN 8050 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type


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    PDF 103mA BR 8050 D transistor br 8050 BR 8050 8050 TRANSISTOR PNP 8050 pnp transistor NPN transistor 8050d transistor b 8050 TRANSISTOR c 8050 80500 TRANSISTOR 8050 d h

    transistor 8550

    Abstract: CL8550 8550 transistor h 8550 pnp transistor
    Text: CL8550 T 0 -9 2 B oENERAL DESCRIPTION:— The 8550 is a PNP epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuits. Complementary to 8050. ABSOLUTE M A X IM U M R A T IN G S „ T O -928 (Note 1) Maximum Temperatures


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    PDF CL8550 100mA Boxfe477. transistor 8550 CL8550 8550 transistor h 8550 pnp transistor