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    800V PNP Search Results

    800V PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73128RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency PNP Transistor Array Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    800V PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1361

    Abstract: LT1361 LT1354 LT1359 LT1360 LT1363 LT1365 1361 transistor npn g1345
    Text: LT1361/LT1362 Dual and Quad 50MHz, 800V/µs Op Amps U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 50MHz Gain-Bandwidth 800V/µs Slew Rate 5mA Maximum Supply Current per Amplifier Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads


    Original     		PDF LT1361/LT1362 50MHz, 50MHz 250nA Filter04 1361 LT1361 LT1354 LT1359 LT1360 LT1363 LT1365 1361 transistor npn g1345

    1360 marking

    Abstract: lt1360 SFH205 LT1354 LT1359 LT1360CN8 LT1363 ltc 1360 marking 909 amp
    Text: LT1360 50MHz, 800V/µs Op Amp U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 50MHz Gain Bandwidth 800V/µs Slew Rate 5mA Maximum Supply Current 9nV/√Hz Input Noise Voltage Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads


    Original     		PDF LT1360 50MHz, 50MHz 250nA LT1360 220pF 470pF 1360 marking SFH205 LT1354 LT1359 LT1360CN8 LT1363 ltc 1360 marking 909 amp

    LT1360/1/2

    Abstract: No abstract text available
    Text: LT1360 50MHz, 800V/µs Op Amp U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 50MHz Gain Bandwidth 800V/µs Slew Rate 5mA Maximum Supply Current 9nV/√Hz Input Noise Voltage Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads


    Original     		PDF LT1360 50MHz, 50MHz 250nA LT1360 220pF 470pF LT1361/LT1362 LT1360/1/2

    Untitled

    Abstract: No abstract text available
    Text: LT1361/LT1362 Dual and Quad 50MHz, 800V/µs Op Amps U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 50MHz Gain Bandwidth 800V/µs Slew Rate 5mA Maximum Supply Current per Amplifier Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads


    Original     		PDF LT1361/LT1362 50MHz, 50MHz 250nA LT1360 LT1364/LT1365 70MHz, 000V/Â

    1361 transistor npn

    Abstract: LT1354 LT1359 LT1360 LT1361 LT1363 LT1365 1361
    Text: LT1361/LT1362 Dual and Quad 50MHz, 800V/µs Op Amps U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 50MHz Gain Bandwidth 800V/µs Slew Rate 5mA Maximum Supply Current per Amplifier Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads


    Original     		PDF LT1361/LT1362 50MHz, 50MHz 250nA LT1360 LT1364/LT1365 70MHz, LT1361/LT1362, 1361 transistor npn LT1354 LT1359 LT1360 LT1361 LT1363 LT1365 1361

    transistor marking N1

    Abstract: jc86 S10XXXH
    Text: S10xxxH  SCR FEATURES IT RMS = 10A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S10xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated


    Original     		PDF S10xxxH S10xxxH transistor marking N1 jc86

    transistor marking N1

    Abstract: No abstract text available
    Text: S08xxxH  SCR FEATURES IT RMS = 8A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S08xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated


    Original     		PDF S08xxxH S08xxxH transistor marking N1

    S2516

    Abstract: transistor marking N1
    Text: S25xxxH  SCR FEATURES IT RMS = 25A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S25xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated


    Original     		PDF S25xxxH S25xxxH S2516 transistor marking N1

    transistor marking N1

    Abstract: S04XXXH
    Text: S04xxxH  SCR FEATURES IT RMS = 4A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S04xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated


    Original     		PDF S04xxxH S04xxxH transistor marking N1

    transistor marking N1

    Abstract: No abstract text available
    Text: S06xxxH  SCR FEATURES IT RMS = 6A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S06xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated


    Original     		PDF S06xxxH S06xxxH transistor marking N1

    S16XXXH

    Abstract: No abstract text available
    Text: S16xxxH  SCR FEATURES IT RMS = 16A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S16xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated


    Original     		PDF S16xxxH S16xxxH

    scr 12a

    Abstract: transistor marking N1 g i angle S12XXXH
    Text: S12xxxH  SCR FEATURES IT RMS = 12A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S12xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated


    Original     		PDF S12xxxH S12xxxH scr 12a transistor marking N1 g i angle

    transistor marking N1

    Abstract: 3016p
    Text: S30xxxH  SCR FEATURES IT RMS = 30A VDRM = 800V to 1200V High surge current capability K A G DESCRIPTION The S30xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated


    Original     		PDF S30xxxH S30xxxH transistor marking N1 3016p

    transistor marking N1

    Abstract: S4016 S40XXXH
    Text: S40xxxH  SCR FEATURES IT RMS = 40A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S40xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated


    Original     		PDF S40xxxH S40xxxH transistor marking N1 S4016

    RT 0100

    Abstract: 1amn scr Igt 1mA 0398C X04XXX X0403
    Text: X04xxxF SENSITIVE GATE SCR FEATURES IT RMS = 4A VDRM = 400V to 800V Low IGT < 200µA DESCRIPTION K The X04xxxF series of SCRs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose applications where low gate sensitivity is required,


    Original     		PDF X04xxxF X04xxxF O202-3 RT 0100 1amn scr Igt 1mA 0398C X04XXX X0403

    P0201

    Abstract: No abstract text available
    Text: P0201xA P0202xA  SENSITIVE GATE SCR FEATURES IT RMS = 0.8A VDRM = 500V to 800V Low IGT ≤ 20 µA max to < 200 µA K G A DESCRIPTION The P020xxA series of SCRs uses a high performance planar PNPN technology. These parts are intended for general purpose


    Original     		PDF P0201xA P0202xA P020xxA P0201

    Untitled

    Abstract: No abstract text available
    Text: FS08.D STANDARD SCR DPAK Plastic On-State Current 8 Amp Gate Trigger Current 0.5 mA to 15 mA Off-State Voltage 200 V ÷ 800V K A These series of Silicon Controlled Rectifier use a high performance PNPN technology. G These parts are intended for general


    Original     		PDF 252-AA 28BSC

    X2N SCR

    Abstract: X2M ST st x2n X2B marking X2B SCR X0202MN X0203BN X0202BN X0203NN X0205BN
    Text: X02xxxN SENSITIVE GATE SCR FEATURES IT RMS = 1.4A VDRM = 200V to 800V Low IGT < 200 µA A K A G DESCRIPTION The X02xxxN series of SCRs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose high volume applications using surface mount


    Original     		PDF X02xxxN X02xxxN OT223 X2N SCR X2M ST st x2n X2B marking X2B SCR X0202MN X0203BN X0202BN X0203NN X0205BN

    Untitled

    Abstract: No abstract text available
    Text: LT1361/LT1362 Dual and Q uad 50MHz, 800V/ns O p Amps KOTURCS DCSCRIPTIOH • 50MHz Gain-Bandwidth ■ 800V/ .is Slew Rate ■ 5mA Maximum Supply Current per Amplifier The LT1361/LT1362 are dual and quad low power high ■ Unity-Gain Stable current and higher slew rate than devices with comparable


    OCR Scan     		PDF LT1361/LT1362 50MHz, 00V/ns 50MHz 250nA 150i2 LT1362 119mW LT1361/LT1362

    LT1360CN8 IC

    Abstract: No abstract text available
    Text: _LT1360 50MHz, 800V/|a,s O p A m p F€OTUR€S D CSCRIPTIOn • 50MHz Gain-Bandwidth ■ 800V/|iS Slew Rate ■ 5mA Maximum Supply Current The LT1360 is a high speed, very high slew rate opera­ ■ 9nV/VHz Input Noise Voltage age, lower input bias current and higher DC gain than


    OCR Scan     		PDF LT1360 50MHz, 50MHz 250nA 150S2 150i2 LT1360 LT1360CN8 IC

    Untitled

    Abstract: No abstract text available
    Text: / T L i n e A ß TECH NO LO GY í s í 50MHz, 800V/jis O p A m p F€fiTUR€S D C S C M P T IO n • 50MHz Gain-Bandwidth ■ 800V/ js Slew Rate ■ 5mA Maximum Supply Current The LT1360 is a high speed, very high slew rate opera­ tional amplifierwith excellent DC performance. The LT1360


    OCR Scan     		PDF 50MHz, 00V/jis 50MHz LT1360 LT1360

    Untitled

    Abstract: No abstract text available
    Text: / = 7 SGS-THOMSON ^ 7 # ® ILiET^OlDGS S25XXXH SCR FEATURES • It rms = 25A - V drm = 200V to 800V ■ High surge current capability DESCRIPTION The S25xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose


    OCR Scan     		PDF S25XXXH S25xxxH T0220

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON KiODOlHlOilLiOir^OOiflOOi S0602xH SENSITIVE GATE SCR FEATURES = 6A > V drm = 200V to 800V • Low Ig t < 200 lA ■ It ( r m s DESCRIPTION The S0602xH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose


    OCR Scan     		PDF S0602xH S0602xH T0220

    JIS B 0209 general

    Abstract: PW01 SCR PNPN CH85 S12XXX S12XXXH
    Text: r z 7 SGS-THOMSON ^ 7 # K LICTH0HC1 S12XXXH SCR FEATURES =12A > V drm=200V to 800V • High surge current capability ■ It rm s DESCRIPTION The S12xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose


    OCR Scan     		PDF S12xxxH T0220 7c12ti237 D070144 JIS B 0209 general PW01 SCR PNPN CH85 S12XXX