Untitled
Abstract: No abstract text available
Text: PD - 90574 IRFAE50 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE50 BVDSS 800V RDS(on) 1.2Ω ID 7.1Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAE50
O-204AA/AE)
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mosfet 10a 800v
Abstract: IRFAE50 diode 71A
Text: PD - 90574 IRFAE50 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE50 BVDSS 800V RDS(on) 1.2Ω ID 7.1Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAE50
O-204AA/AE)
p252-7105
mosfet 10a 800v
IRFAE50
diode 71A
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mosfet 10a 800v
Abstract: IRFAE30
Text: PD - 90614 IRFAE30 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE30 BVDSS 800V RDS(on) 3.2Ω ID 3.1Α The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAE30
O-204AA/AE)
parame252-7105
mosfet 10a 800v
IRFAE30
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Untitled
Abstract: No abstract text available
Text: PD - 90579 IRFAE40 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE40 BVDSS 800V RDS(on) 2.0Ω ID 4.8Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAE40
O-204AA/AE)
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Untitled
Abstract: No abstract text available
Text: PD - 90614 IRFAE30 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE30 BVDSS 800V RDS(on) 3.2Ω ID 3.1Α The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAE30
O-204AA/AE)
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mosfet 10a 800v
Abstract: IRFAE40
Text: PD - 90579 IRFAE40 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE40 BVDSS 800V RDS(on) 2.0Ω ID 4.8Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAE40
O-204AA/AE)
mosfet 10a 800v
IRFAE40
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"VDSS 800V" mosfet
Abstract: IRFBE30L IRFBE30S
Text: PD - 94694 IRFBE30S IRFBE30L O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International
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IRFBE30S
IRFBE30L
O-262
IRFBE30S/IRFBE30L
"VDSS 800V" mosfet
IRFBE30L
IRFBE30S
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Untitled
Abstract: No abstract text available
Text: PD - 94694 IRFBE30S IRFBE30L O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International
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IRFBE30S
IRFBE30L
O-262
08-Mar-07
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IRFBE30L
Abstract: IRFBE30S
Text: PD - 94694 IRFBE30S IRFBE30L O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International
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IRFBE30S
IRFBE30L
O-262
12-Mar-07
IRFBE30L
IRFBE30S
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P-Channel MOSFET 800v
Abstract: IRFBE30L IRFBE30S IRL3103L
Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International
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IRFBE30SPbF
IRFBE30LPbF
IRFBE30S
O-262
IRFBE30L
12-Mar-07
P-Channel MOSFET 800v
IRFBE30L
IRFBE30S
IRL3103L
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800v irf
Abstract: IRFBE30L IRFBE30S 95507 irf 480
Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International
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IRFBE30SPbF
IRFBE30LPbF
IRFBE30S
O-262
IRFBE30L
EIA-418.
800v irf
IRFBE30L
IRFBE30S
95507
irf 480
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P-Channel MOSFET 800v
Abstract: No abstract text available
Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International
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IRFBE30SPbF
IRFBE30LPbF
IRFBE30S
O-262
IRFBE30L
08-Mar-07
P-Channel MOSFET 800v
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P-Channel MOSFET 800v
Abstract: 800v irf IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRFBE30L IRFBE30S IRL3103L P-Channel mosfet 400v P Channel Power MOSFET IRF ED marking code diode
Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International
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IRFBE30SPbF
IRFBE30LPbF
IRFBE30S
O-262
IRFBE30L
Dissi957)
EIA-418.
P-Channel MOSFET 800v
800v irf
IRF P CHANNEL MOSFET
IRF P CHANNEL MOSFET 100v
IRFBE30L
IRFBE30S
IRL3103L
P-Channel mosfet 400v
P Channel Power MOSFET IRF
ED marking code diode
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IRFNG50
Abstract: mosfet 10a 800v high power 91556A
Text: PD - 91556A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG50 R DS(on) 2.0Ω ID 5.5A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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1556A
IRFNG50
IRFNG50
mosfet 10a 800v high power
91556A
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1RFPE50
Abstract: IRFPE50 rd520
Text: PD-9.573B International IRFPE50 ë |r]Rectifier HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements ^dss - 800V R DS on = 1
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IRFPE50
O-247
O-220
O-218
1RFPE50
rd520
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CD 1517
Abstract: IRFIBE20G
Text: PD-9.853 International |lOR]Rectifier IRFIBE20G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance D V D ss = 800V \ G y 3 ^DS on =
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IRFIBE20G
O-220
CD 1517
IRFIBE20G
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100-C
Abstract: IRFPE30
Text: P D -9 .6 1 2 A International S Rectifier IRFPE30 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements 800V V dss = R DS on = 3 0 ^
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IRFPE30
O-247
O-220
O-218
lnteiT13tÃ
100-C
IRFPE30
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LV 1084
Abstract: IRFPE50
Text: PD-9.573B International S Rectifier IRFPE50 HEXFET P ow er M O S FE T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 800V ^D S on = 1
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IRFPE50
O-247
T0-220
O-218
LV 1084
IRFPE50
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IRFPE40
Abstract: No abstract text available
Text: PD-9.578B International k?r Rectifier IRFPE40 HEXFET P o w e r M O S F E T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 800V ^ D S o n =
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IRFPE40
O-247
O-220
O-218
IRFPE40
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irfbe30
Abstract: No abstract text available
Text: PD-9.613A International I S Rectifier IRFBE30 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 800V R DS on - 3 -0 ß lD = 4.1 A Description Third Generation HEXFETs from International Rectifier provide the designer
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IRFBE30
O-220
T0-220
irfbe30
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mosfet equivalent
Abstract: L03A YIHON MOSFET 800V 3A
Text: FU JI 2SK2562-01R N-channel MOS-FET FAP-II Series 800V > Features 2 ,2 0 7A 80W > Outline Drawing TO-3PF - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Avalanche Proof > Applications
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2SK2562-01R
60V4IflOVfc
mosfet equivalent
L03A
YIHON
MOSFET 800V 3A
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Untitled
Abstract: No abstract text available
Text: FEATURES B V DSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V ■ Low Rds(0n) : 0.746 £1 (Typ.) LO CD ■ Q Avalanche Rugged Technology
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SSF10N80A
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Diode 188
Abstract: APT8016DFN APT7516DFN 7516-D 47Amps
Text: ADVANCED MIE POWER TECHNOLOGY 1 oaSTiai DÜDOS'IM S32 • I AVP ■ ADVANCED F O M fER _T-3>°h$„ I Techno lo g y O D 2> 0<2 à (fò APT8016DFN 800V 47.0A 0.16 Ï2 APT7516DFN 750V 47.0A 0.16 ¿1 0 3(2 POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFEtS
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APT8016DFN
APT7516DFN
MIL-STD-750
Diode 188
7516-D
47Amps
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diode BYY 62
Abstract: MOSFET 800V 10A to 220 3l IRFBE20 BYY diode
Text: PD-9.610A International S Rectifier IRFBE20 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 800V ^DS on = lD = 1.8A Description T h ird G e n e ra tio n H E X F E T s fro m Inte rn a tio n a l R ectifie r provid e th e d e sig n e r
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IRFBE20
O-220
diode BYY 62
MOSFET 800V 10A to 220 3l
IRFBE20
BYY diode
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