Untitled
Abstract: No abstract text available
Text: High Directivity Monolithic Amplifier 50Ω VNA-22 0.5 to 2.5 GHz Maximum Ratings Operating Temperature Features -40°C to 85°C Storage Temperature -55°C to 150°C DC Voltage 8V Power 800mW Input Power no damage 10 dBm Pin Connections • 3V & 5V operation
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800mW
VNA-22
XX211
VNA-22
100pF
M98898
ED-9810A/2
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KSC1008
Abstract: No abstract text available
Text: KSC1008 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING TO-92 • Complement to KSA708 • High Collector-Base Voltage: VCBO=80V • Collector Current: IC=700mA • Collector Dissipation: PC=800mW ABSOLUTE MAXIMUM RATINGS TA=25°°C
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KSC1008
KSA708
700mA
800mW
KSC1008
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Transistor B C 458
Abstract: ksb564 ksd471
Text: KSD471A KSD471A Audio Frequency Power Amplifier • • • • Complement to KSB564A Collector Current : IC=1A Collector Power Dissipation : PC=800mW Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector
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KSD471A
KSB564A
800mW
KSD471A
Transistor B C 458
ksb564
ksd471
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pnp Transistor TO92 5V 200mA
Abstract: KSA709
Text: KSA709 KSA709 High Voltage Amplifier • • • • Collector-Base Voltage : VCBO= -160V Collector Power Dissipation : PC=800mW Complement to KSC1009 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector
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KSA709
-160V
800mW
KSC1009
KSA709RBU
KSA709CYBU
KSA709YBU
KSA709RTA
KSA709YTA
pnp Transistor TO92 5V 200mA
KSA709
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transistor c1009
Abstract: c1009 c1009 transistor KSA709 KSC1009
Text: KSC1009 KSC1009 High Voltage Amplifier • • • • • High Collector-Base Voltage : VCBO=160V Collector Current : IC=700mA Collector Power Dissipation : PC=800mW Complement to KSA709 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base
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KSC1009
700mA
800mW
KSA709
KSC1009
KSC1009CYBU
KSC1009CYTA
KSC1009GBU
KSC1009GTA
transistor c1009
c1009
c1009 transistor
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laser diode 660nm
Abstract: K66S09F-0
Text: 660nm~690nm HHL Package Fiber-Coupled Diode Laser K66S09F-0.80W K67S09F-0.80W K68S09F-0.80W K69S09F-0.80W Key Features： 800mW output power 105µm or 200µm fiber core diameter 0.22NA 660nm~690nm wavelength Applications： Medical use Material processing
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660nm
690nm
K66S09F-0
K67S09F-0
K68S09F-0
K69S09F-0
800mW
k6xs09f
laser diode 660nm
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DPS8100
Abstract: TLFD600 schematic diagram modem adsl echo cancellation schematic diagram 3bit flash adc ISSCC99
Text: A 800mW, Full-Rate ADSL-RT Analog Frontend IC with Integrated Line Driver Hubert Weinberger, Andreas Wiesbauer, Christian Fleischhacker, Jörg Hauptmann Infineon Technologies, Design Centers Austria GmbH, Design Center Villach hubert.weinberger@infineon.com
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800mW,
ISSCC99,
TLFD600,
DPS8100
TLFD600
schematic diagram modem adsl
echo cancellation schematic diagram
3bit flash adc
ISSCC99
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KSA708
Abstract: No abstract text available
Text: KSA708 KSA708 Low Frequency Amplifier & Medium Speed Switching • • • • Complement to KSC1008 Collector-Base Voltage : VCBO= -80V Collector Power Dissipation : PC=800mW Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1
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KSA708
KSC1008
800mW
KSA708
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TB-01
Abstract: VNA-22 XX211
Text: High Directivity VNA-22+ VNA-22 Monolithic Amplifier 50Ω 0.5 to 2.5 GHz Maximum Ratings Operating Temperature Features -40°C to 85°C Storage Temperature -55°C to 150°C DC Voltage 8V Power 800mW Input Power no damage 10 dBm Pin Connections • 3V & 5V operation
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VNA-22+
VNA-22
800mW
2002/95/EC)
100pF
M98898
ED-9810A/2
TB-01
VNA-22
XX211
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SDD115
Abstract: No abstract text available
Text: DC/DC Converter Transformer Type SDD115 Dimensions: UNIT : mm 12.0 Max. Recommand Pad Specifications 4.5 Max. 5 8 2.0 1.0 11.3 Max. 2.5 4 Max. Operation Freq. : 500KHz Max. Operation Power : 800mW @100KHz 2.0W @300KHz 3.0W @500KHz 6.5 1 0.5x0.15 DDR63 3.0 Max.
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SDD115
500KHz
800mW
100KHz
300KHz
DDR63
280mW
500mW
SDD115
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KSB564A
Abstract: KSD471A
Text: KSB564A KSB564A Audio Frequency Power Amplifier • • • • Complement to KSD471A Collector Current : IC = -1A Collector Power Dissipation : PC = 800mW Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector
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KSB564A
KSD471A
800mW
KSB564A
KSD471A
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1078A CPH6003A RF Transistor http://onsemi.com 12V, 150mA, fT=7GHz, NPN Single CPH6 Features • • • • High gain fT=7GHz typ High Current (IC=150mA) Ultraminiature and thin 6pin package Large Collector Disspation (800mW) Specifications
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ENA1078A
CPH6003A
150mA,
150mA)
800mW)
250mm2
A1078-7/7
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PA3202
Abstract: PA3202-N24-R PA3202-N24-T
Text: UNISONIC TECHNOLOGIES CO., LTD PA3202 CMOS IC 2-W STEREO AUDIO POWER AMPLIFIER WITH MUTE DESCRIPTION The UTC PA3202 is a monolithic integrated circuit that stereo bridged audio power amplifiers capable of producing 2 W into 3Ω with a 5V supply voltage or 800mW into 3Ω with a 3.3V supply
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PA3202
PA3202
800mW
PA3202,
QW-R502-106
PA3202-N24-R
PA3202-N24-T
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components KSD471A KSD471A-O KSD471A-Y KSD471A-G omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features x Collector Dissipation : IC = 1A x Collector Current : PC = 800mW
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KSD471A
KSD471A-O
KSD471A-Y
KSD471A-G
800mW
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MA7300B
Abstract: MA7056 MA7160 MA7470 MA7100 Ma7180-a MA7000 ma706 zener band yellow MA7510
Text: MA111 Zener Diodes MA7000 Series Silicon planer type Unit : mm For stabilization of power supply ø0.8 ● Radial taping possible 27 min. Large power dissipation Ptot 800mW Colored band indicates Vz classification 3rd Band 2nd Band 1st Band 5.0 max. ●
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MA111
MA7000
800mW)
FDO-41
MA7120
MA7130
MA7150
MA7160
MA7180
MA7200
MA7300B
MA7056
MA7470
MA7100
Ma7180-a
ma706
zener band yellow
MA7510
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tdk cn-3850
Abstract: CN3851 CN-3850 CN-3851 TDK CN3850 CN3850 CN3803 TDK DC to DC converters, DC to AC inverters CN3857 CN-3801
Text: TDK DC to DC Converters, DC to AC Inverters 800mW 4 0E D • ÔÛS12MÔ T D K OGOM^B 1 ¡TDKA CORP 7- // _ CN SERIES DC TO DC CONVERTERS FEATURES • High stability ± 5 % . • Low-profile — Can be installed in a 3/4 inch rack, (height 12mm [.472 inches])
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800mW
CN-3850
CN-3851
CN-3852
CN-3853
CN-3854
CN-3855
CN-3856
CN-3857
CN-3858
tdk cn-3850
CN3851
CN-3850
TDK CN3850
CN3850
CN3803
TDK DC to DC converters, DC to AC inverters
CN3857
CN-3801
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A10C
Abstract: CY7C1006
Text: CYPRESS SEMICO NDU CTOR MbE » I aSflìbbé QD0ti7Q4 T • CY7C1006 ADVANCED INFORMATION. CYPRESS SEMICONDUCTOR 256K x 4 Static R/W RAM Features Functional Description • Highspeed — U a = 15 ns • CMOS for optimum speed/power • Low active power — 800mW
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CY7C1006
800mW
CY7C1006
CY7CI006
300-mil-wideDIPs
7C1006â
A10C
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Untitled
Abstract: No abstract text available
Text: Audio ICs 6V/800mW single-channel power amplifier BA527 The BA527 is a monolithic power amplifier designed for portable cassette players and radio cassette players. With a 6V power supply, it has a rated output of 800mW into a 4Q load THD = 10% . It is a high-grade design that gener
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V/800mW
BA527
BA527
800mW
800mW
1300mW.
BA526
45Vitns
GGnS42
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ADC80-12
Abstract: 223S ADC80 ADC80-10 DAC 0-10v
Text: ANALOG D EV ICES □ 12-Bit Successive Approximation Integrated Circuit A/D Converter PRELIM IN A R Y TECHNICA L DATA FEATURES Performance True 12-Bit Operation: Max Nonlinearity <±0.012% Low Gain T.C.: <±30ppm /°C Low Power: 800mW Fast Conversion Time: <22/us
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12-Bit
30ppm/Â
800mW
ADC80
12-biof
AD7501
AD583
ADC80
ADC80-12
223S
ADC80-10
DAC 0-10v
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transistor 1005 oj
Abstract: KSA707 KSC1072
Text: SAMSUNG S EM I C ONDU C T OR INC 14E KSC1072 D | 7TbM:L42 Q0Qt.fl7M 3 | T -lf-H NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Complement to KSA7U7 • Collector-Base Voltage Vceo=60V • Collector Dissipation Pc =800mW ABSOLUTE MAXIMUM RATINGS Ta=25°C
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KSC1072
KSA707
800mW
100/iA,
transistor 1005 oj
KSA707
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KSC1008
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KSC1008 LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING • • • • Complement to KSA7D8 High Collector-Base Voltage Vcso=BOV Collector Current lc=700mA Collector Dissipation Pc=800mW ABSOLUTE MAXIMUM RATINGS Ta=25°C
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KSC1008
700mA
800mW
10m08
05472tJ
KSC1008
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KSA708
Abstract: KSC1008
Text: KSA708 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER TO-92 MEDIUM SPEED SWITCHING • Complement to KSC1008 • Collector-Base Voltage VCBo=-80V • Collector Dissipation Pc =800mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage
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KSA708
KSC1008
800mW
-100fÂ
QQ24b4Ã
Sbm42
KSA708
KSC1008
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2SA708
Abstract: No abstract text available
Text: fr | e FORWARD INTERNATIONAL ELECTRONICS l id . 2SA708 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AM PLIFIER MEDIUM SPEED SW ITCHING * Complement to2Scl008 * Collector-Base Voltage Vcbo=-80 V * Collector Dissipation; Pc=800mW
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2SA708
to2Scl008
800mW
-100uA
-10mA
-50mA
-500mA
2SA708
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a1024
Abstract: Panasonic diode MA1033 DIODE D29 MA4030 ma4300 zener MA2560 MA7056 MA1Z091 MA2430
Text: Diode # Zener Diode Series Zener Voltage Vz V MA1000 DO-35 (D28) P d = 500mW MA2000 DO-41 (D29) P D = 1W MA3000/MAZ Mini Type 3 pins (D12) P d = 200mW MA4000 DO-34 (D26) Pc = 370mW MA5000 Mini-Power Type 2 pins (D17) P D = 500mW MA7000 DO-41 (D29) P d = 800mW
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MA1000
DO-35
500mW
MA1020
A1022
A1024
A1027
MA1030
MA1033
MA1036
Panasonic diode
DIODE D29
MA4030
ma4300 zener
MA2560
MA7056
MA1Z091
MA2430
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