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NP30N04QUK-E2-AY
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Renesas Electronics Corporation
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40 V – 30 A – Dual N-channel Power MOS FET |
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NP30N06QDK-E1-AY
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Renesas Electronics Corporation
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60 V - 30 A - Dual N-channel Power MOS FET, HSON, /Embossed Tape |
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NP30N04QUK-E1-AY
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Renesas Electronics Corporation
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40 V – 30 A – Dual N-channel Power MOS FET |
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DA14708-00HZDB-P
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Renesas Electronics Corporation
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SmartBond™ DA14708 Bluetooth® Low Energy Daughter Board |
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68691-800HLF
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Amphenol Communications Solutions
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BergStik®, Board to Board connector, Unshrouded vertical header, Through Hole, Double Row, 0 Positions, 2.54 mm (0.100in) Pitch. |
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