800- 2000MHZ AMPLIFIER IC Search Results
800- 2000MHZ AMPLIFIER IC Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TC75S102F |
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Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 |
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| 7UL1G07FU |
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One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), SOT-353 (USV), -40 to 125 degC |
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| 74HC4053FT |
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CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC |
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| 7UL2T125FK |
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One-Gate Logic(L-MOS), Buffer with Level Shifting, SOT-765 (US8), 2 in 1, -40 to 125 degC |
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| 7UL2T126FK |
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One-Gate Logic(L-MOS), Buffer with Level Shifting, SOT-765 (US8), 2 in 1, -40 to 125 degC |
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800- 2000MHZ AMPLIFIER IC Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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ic 1496 specifications
Abstract: 2SC4855 ITR07603 ITR07604 ITR07605 ITR07606 ITR07607 CE1M KT 1117
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ENN4759 2SC4855 S21e2 2SC4855] ic 1496 specifications 2SC4855 ITR07603 ITR07604 ITR07605 ITR07606 ITR07607 CE1M KT 1117 | |
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Contextual Info: Ordering number:ENN4759 NPN Epitaxial Planar Silicon Transistor 2SC4855 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7.5dB typ |
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ENN4759 2SC4855 S21e2 2SC4855] | |
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Contextual Info: Ordering number:ENN4578A NPN Epitaxial Planar Silicon Transistor 2SC4853 Low-Voltage, Low-Current High-Frequency Amplifier Applications Package Dimensions unit:mm 2059B [2SC4853] 0.425 • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7dB typ (f=1GHz). |
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ENN4578A 2SC4853 2059B 2SC4853] | |
KT 819 transistor
Abstract: TRANSISTOR KT 838
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ENN4579 2SC4854 S21e2 2018B 2SC4854] KT 819 transistor TRANSISTOR KT 838 | |
MARKING CN
Abstract: ic 4578 2SC4853 ITR07581 ITR07582 ITR07583 ITR07584 j200 transistor
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ENN4578A 2SC4853 2059B 2SC4853] S21e2 MARKING CN ic 4578 2SC4853 ITR07581 ITR07582 ITR07583 ITR07584 j200 transistor | |
CE1M
Abstract: TRANSISTOR KT 838 KT 819 transistor 2SC4854 ITR07592 ITR07593 ITR07594 ITR07595 AX-9521
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ENN4579 2SC4854 S21e2 2018B 2SC4854] CE1M TRANSISTOR KT 838 KT 819 transistor 2SC4854 ITR07592 ITR07593 ITR07594 ITR07595 AX-9521 | |
A1076
Abstract: ITR07582 ITR07583 ITR07585
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2SC4853A ENA1076 S21e2 A1076-5/5 A1076 ITR07582 ITR07583 ITR07585 | |
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Contextual Info: 2SC4853A Ordering number : ENA1076A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC4853A Low-Voltage, Low-Current High-Frequency Amplifier Applications Features • Low-voltage, low-current operation : fT=5GHz typ VCE=1V, IC=1mA : ⏐S21e⏐2=7dB typ (f=1GHz) |
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2SC4853A ENA1076A A1076-8/8 | |
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Contextual Info: HMC-C013 10W PA Module, 800 - 2000 MHz The HMC-C013 is a 10 Watt Power Amplifier Module suitable for Cellular/3G repeaters, wireless data, laboratory use and ATE applications. The unit includes DC power sequencing, enable and conditioning for load mismatch protection. Thermal protection/fault circuitry |
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HMC-C013 HMC-C013 CDMA2000 800MHz 1000MHz 1900MHz 2000MHz | |
j200 transistor
Abstract: 2SC4853 FH104 of transistor C 4908 800- 2000mhz amplifier ic
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ENN6218 FH104 FH104] FH104 2SC4853 j200 transistor of transistor C 4908 800- 2000mhz amplifier ic | |
j200 transistor
Abstract: 2SC4853 FH104 of transistor C 4908 62183 transistor c 3228 MARKING e1v
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ENN6218 FH104 FH104] FH104 2SC4853 j200 transistor of transistor C 4908 62183 transistor c 3228 MARKING e1v | |
j200 transistor
Abstract: it00307 j200 ON Semiconductor TA-1706 A 933 S transistors 2SC4867 FH103 N0199TS ic 741 equivalent IT00303
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ENN6217 FH103 FH103] FH103 2SC4867, j200 transistor it00307 j200 ON Semiconductor TA-1706 A 933 S transistors 2SC4867 N0199TS ic 741 equivalent IT00303 | |
TA-1706
Abstract: 2SC4867 FH103 TA1706
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ENN6217 FH103 FH103] FH103 2SC4867, TA-1706 2SC4867 TA1706 | |
transistor 8026
Abstract: 2SC5245 FH105
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ENN6219 FH105 FH105] FH105 2SC5245, transistor 8026 2SC5245 | |
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FH102A
Abstract: 2SC5226A ITR10753 ITR10754 ITR10755 ITR10756 ZO 607 transistor
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FH102A ENA1125 FH102A 2SC5226A, A1125-6/6 2SC5226A ITR10753 ITR10754 ITR10755 ITR10756 ZO 607 transistor | |
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Contextual Info: FH102A Ordering number : ENA1125 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor FH102A High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency |
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ENA1125 FH102A FH102A 2SC5226A, A1125-6/6 | |
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Contextual Info: FH102A Ordering number : ENA1125 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor FH102A High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency |
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FH102A ENA1125 FH102A 2SC5226A, A1125-6/6 | |
FH105A
Abstract: AMPLIFIER SANYO DC 303 SANYO DC 303 2SC5245A j200 ON Semiconductor
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FH105A ENA1126 FH105A 2SC5245A, A1126-6/6 AMPLIFIER SANYO DC 303 SANYO DC 303 2SC5245A j200 ON Semiconductor | |
SC 708-4
Abstract: MCP6 Marking sanyo
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ENA1125A FH102A FH102A 2SC5226A, A1125-8/8 SC 708-4 MCP6 Marking sanyo | |
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Contextual Info: FH102A Ordering number : ENA1125A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor FH102A High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting |
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FH102A ENA1125A FH102A 2SC5226A, A1125-8/8 | |
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Contextual Info: RF2480 ',5 &7 48$'5$785( 02'8/$725 7\SLFDO $SSOLFDWLRQV • Dual-Band CDMA Base Stations • W-CDMA Base Stations • TDMA/TDMA-EDGE Base Stations • WLAN and WLL Systems • GSM-EDGE/EGSM Base Stations • TETRA Systems 5 3URGXFW 'HVFULSWLRQ The RF2480 is a monolithic integrated quadrature modulator IC capable of universal direct modulation for highfrequency AM, PM, or compound carriers. This low-cost |
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RF2480 RF2480 800MHz 2500MHz. Compone13 | |
741 IC circuit applicationsContextual Info: Ordering number:ENN4856 NPN Epitaxial Planar Silicon Transistor 2SC4867 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.2dB typ f=1GHz . · High gain : S21e2=13dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ. |
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ENN4856 2SC4867 S21e2 2059B 2SC4867] 741 IC circuit applications | |
KT 819 transistor
Abstract: 2SC4868 ITR07675 ITR07676 ITR07677 ITR07678 TRANSISTOR KT 837
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ENN5043 2SC4868 S21e2 2018B 2SC4868] KT 819 transistor 2SC4868 ITR07675 ITR07676 ITR07677 ITR07678 TRANSISTOR KT 837 | |
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Contextual Info: MICRO DEVICES 2.5GHZ DIRECT QUADRATURE MODULATOR T y p ic a l A p p lic a tio n s • Digital Communications Systems • GSM, DCS 1800, JDC, D-AMPS Systems • Spread-Spectrum Communication Systems • Commercial and Consumer Systems • GMSK,QPSK, DQPSK, QAM Modulation |
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RF2422 800MHz 2500MHz. 900MHz 2000MHz 2500MHz 1900MHz | |