800 MHZ CELLULAR AMPLIFIER CIRCUIT DIAGRAM Search Results

VQFN24

Abstract: CGB91 VQFN-24 Marking code CGB tdma circuit diagram VC-37 MMIC marking CODE 73
Contextual Info: GaAs MMIC CGB91 Target Datasheet • HBT power amplifier for 800 MHz AMPS, CDMA and TDMA portable cellular phones • Integrated temperature compensated bias circuit

CGM800C

Abstract: tdma block diagram
Contextual Info: GaAs Module CGM800C Target Datasheet • HBT power amplifier module for 800 MHz AMPS, CDMA and TDMA portable cellular phones • Integrated temperature compensated bias circuit

Contextual Info: GaAs MMIC CGB 91 Target Data Sheet • • • • • HBT power amplifier for 800 MHz AMPS, CDMA and TDMA portable cellular phones Integrated temperature compensated bias circuit Power down control CMOS- switchable high/low-power mode Internal input match

transistor C456

Abstract: microstripline FR4 AT-41511 4.1 amplifier circuit diagram 2907A PNP bipolar transistors microstripline 41511 FR4 epoxy dielectric constant 4.4 AT-41411 AT-41486
Contextual Info: Two-Stage 800 – 1000 MHz Amplifier Using the AT-41511 Silicon Bipolar Transistor Application Note 1084 Introduction Circuit Design Commercial markets in the VHF through L band frequency range require low cost, high performance components. In many applications, such as cellular and

GVQ09253

Contextual Info: GaAs MMIC CGB 91 Target Data Sheet • • • • • HBT power amplifier for 800 MHz AMPS, CDMA and TDMA portable cellular phones Integrated temperature compensated bias circuit Power down control CMOS- switchable high/low-power mode Internal input match

800 mhz Cellular amplifier circuit diagram

Abstract: GN01125B s-mini
Contextual Info: GaAs MMICs for Cellular Phone GN01125B Driver Amplifier for 800 MHz-Band PDC Features • • • • Matching circuit built-in Input-side,Output-side Low consumption current : I DD = 15 mA High gain : PG = 18 dB Small package : S-Mini Type . 6-pin Characteristics Diagram

4456-P

Contextual Info: In fineon ♦s*î hno!09 CGB 91 GaAs MMIC Target Data Sheet • HBT power amplifier for 800 MHz AMPS, CDMA and TDMA portable cellular phones • Integrated temperature compensated bias circuit • Power down control • CMOS- switchable high/low-power mode

smd code marking book

Abstract: smd code book marking code H2 SMD GPS09230 Marking code CGB
Contextual Info: GaAs HBT CGB 90 Preliminary Data Sheet • • • • • HBT power amplifier for 800 MHz AMPS, CDMA and TDMA portable cellular phones Integrated temperature compensated bias circuit Power down control CMOS-switchable high/low-power mode Simple input and output match on PCB

Contextual Info: GaAs Module CGM 800C Target Data Sheet • • • • • • HBT power amplifier module for 800 MHz AMPS and CDMA portable cellular phones Integrated temperature compensated bias circuit Power down control CMOS-switchable high/low-power mode Input and output matched to 50 Ω

Contextual Info: GaAs Module CGM 800C Target Data Sheet • • • • • • HBT power amplifier module for 800 MHz AMPS and CDMA portable cellular phones Integrated temperature compensated bias circuit Power down control CMOS-switchable high/low-power mode Input and output matched to 50 Ω

Contextual Info: Infineon I wc h n c i o g i «* GaAs Module Target Data Sheet • • • • • • HBT power amplifier module for 800 MHz AMPS and CDMA portable cellular phones Integrated temperature compensated bias circuit Power down control CMOS-switchable high/low-power mode

nf 829

Contextual Info: RF410 Tx Application-Specific Integrated Circuit ASIC for IS-136 TDMA/AMPS Cellular Telephone The RF410 Tx Application-Specific Integrated Circuit (ASIC) is a triplemode, dual-band transmitter intended to be used in IS-136 compliant cellular phones. As a dual mode IC it can be used in TDMA mode or

Contextual Info: SEMICONDUCTOR WIRELESS COMMUNICATIONS DIVISION TQ9222 DATASHEET Dual-Band TDMA LNA/Downconverter 1C 800 M XR800 Features 800 Product Description The TQ9222 is a 3- V, RF receiver 1C designed specifically for dual-band TDMA applications. Its RF performance meets the requirements of products designed to

TQ9222

Abstract: IS-136 QSOP-24 TQ5121
Contextual Info: WIRELESS COMMUNICATIONS DIVISION TQ9222 Vdd LNA OUT MXR LO MXR 1900 1900 1900 Vdd LNA 1900 MXR RF 1900 DATA SHEET MXR IF 1900 Dual-Band TDMA LNA/Downconverter IC LNA IN 1900 Vdd LNA 800 MXR IF 800 LNA IN 800 MXR RF 800 LNA OUT Vdd 800 MXR 800 Features MXR LO

GN02039B

Abstract: GN02029B GN02034B GN01096B GN01105B GN01121B GN01125B GN01140B GN01154B GN02037B
Contextual Info: Caution for Safety • Gallium arsenide material GaAs is used in this product. DANGER Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when

FET differential amplifier circuit

Abstract: CIRCUIT DIAGRAM FOR IC 810 MD59-0039 MD59-0039RTR MD59-0039TR
Contextual Info: MD59-0039 Cellular CDMA Upconverter / Driver 820 - 850 MHz LOA VDD MIX OUT 1 RFA VDD IF IN+ RFA SRC IF IN- RFA IN GND DRV SRC1 DRV VDD1 IF- VDD DRV VDD2 VVA CNTL DRV OUT IF+ VDD DRV SRC 2 M/A-COM’s MD59-0039 upconverter IC for cellular CDMA applications integrates a mixer, RF amplifier, IF amplifier, and

Contextual Info: 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER FEATURES upC8112T INTERNAL BLOCK DIAGRAM BROADBAND OPERATION: RF Input: 800 - 2000 MHz IF Output: 100- 300 MHz INPUT IP3: -7 dBm LOW VOLTAGE OPERATION: 2.7~3.3 V LOW CURRENT CONSUMPTION: 8.5 mA POWER SAVE FUNCTION

C1327 transistor

Abstract: C1285 C429 C872 DTC114WUA RF25F
Contextual Info: RF25F Tx ASIC for CDMA/AMPS and PCS Applications Features The RF25F Transmit Application-Specific Integrated Circuit ASIC is a tri-mode, dual-band upconverter and driver amplifier in a 5x5 mm LGA package designed for transmitter application in portable phones. The RF25F can be used in both cellular

UPC8112T

Abstract: UPC8112T-E3
Contextual Info: 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER UPC8112T INTERNAL BLOCK DIAGRAM FEATURES • BROADBAND OPERATION: RF Input: 800 - 2000 MHz IF Output: 100 - 300 MHz IF Output RF Input • INPUT IP3: -7 dBm • LOW VOLTAGE OPERATION: 2.7~3.3 V • LOW CURRENT CONSUMPTION: 8.5 mA

MAX2292

Abstract: Motorola transceiver chip 100 MHz to 4GHz MAX2382 ericsson single line module 900 GSM Max2606 fm transmitter Single Chip L-band Tuner DVB Satellite MAX2620 Cellular RF Transmitter 1900 2400 MHz MAX2750 MAX2451
Contextual Info: WIRELESS Data Sheets ANALOG DESIGN SOLUTIONS Applications Notes • Free Samples • Chip-Scale PA Delivers +22.5dBm Output Power for 2.4GHz 4. HIGHER 5dB POWE 802.11b WLAN PRISM R THAN II PA! +2.7V TO +3.6V SUPPLY BIAS DET OUT 1. DETECTOR mm 5 • 28.5dB GAIN

2 LOIF

Abstract: UPC8112T UPC8112T-E3
Contextual Info: 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER UPC8112T INTERNAL BLOCK DIAGRAM FEATURES • BROADBAND OPERATION: RF Input: 800 - 2000 MHz IF Output: 100 - 300 MHz IF Output RF Input • INPUT IP3: -7 dBm • LOW VOLTAGE OPERATION: 2.7~3.3 V • LOW CURRENT CONSUMPTION: 8.5 mA

RF251

Contextual Info: *1* Rockw ell Semiconductor Systems RF251 Tx ASIC for CDMAr AMPS, and PCS Applications Product Description Applications The RF251 Tx Application-Specific Integrated Circuit ASIC is a triple-mode, dual-band transmitter intended to be used in Code Division Multiple Access (CDMA)

6bta

Abstract: 2.4 ghz FM RECEIVER CIRCUIT DIAGRAM
Contextual Info: m Advance Data Sheet January 1993 Microelectronics W2005 1 GHz to Baseband FM and DQPSk Cellular Receiver Features Applications • 800 MHz to 1 GHz RF-IF mixer ■ IS54 North American dual-mode Cellular Radio Portable and Mobile Terminals ■ Proven double conversion architecture:

sfgcg450

Abstract: 450 khz IF Filter EVB3030A IS136 IS-136 IS-54 LUCW3030ACA LUCW3030ACA-DB W3030 ba 8316
Contextual Info: Data Sheet April 1999 W3030 3 V Dual-Mode IF Cellular Receiver Features n n n n Proven double conversion architecture:  First IF capability: 10 MHz to over 1000 MHz  Second IF capability: 0.2 MHz to 2.0 MHz n Low supply current n Analog received signal strength indicator RSSI