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    800 MHZ CELLULAR AMPLIFIER CIRCUIT DIAGRAM Search Results

    800 MHZ CELLULAR AMPLIFIER CIRCUIT DIAGRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    800 MHZ CELLULAR AMPLIFIER CIRCUIT DIAGRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VQFN24

    Abstract: CGB91 VQFN-24 Marking code CGB tdma circuit diagram VC-37 MMIC marking CODE 73
    Text: GaAs MMIC CGB91 Target Datasheet • HBT power amplifier for 800 MHz AMPS, CDMA and TDMA portable cellular phones • Integrated temperature compensated bias circuit


    Original     		PDF CGB91 VQFN24 VQFN24 CGB91 VQFN-24 Marking code CGB tdma circuit diagram VC-37 MMIC marking CODE 73

    CGM800C

    Abstract: tdma block diagram
    Text: GaAs Module CGM800C Target Datasheet • HBT power amplifier module for 800 MHz AMPS, CDMA and TDMA portable cellular phones • Integrated temperature compensated bias circuit


    Original     		PDF CGM800C 30dbm 30dBm, 885kHz 98MHz CGM800C tdma block diagram

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC CGB 91 Target Data Sheet • • • • • HBT power amplifier for 800 MHz AMPS, CDMA and TDMA portable cellular phones Integrated temperature compensated bias circuit Power down control CMOS- switchable high/low-power mode Internal input match


    Original     		PDF P-VQFN-24-3 GVQ09253

    transistor C456

    Abstract: microstripline FR4 AT-41511 4.1 amplifier circuit diagram 2907A PNP bipolar transistors microstripline 41511 FR4 epoxy dielectric constant 4.4 AT-41411 AT-41486
    Text: Two-Stage 800 – 1000 MHz Amplifier Using the AT-41511 Silicon Bipolar Transistor Application Note 1084 Introduction Circuit Design Commercial markets in the VHF through L band frequency range require low cost, high performance components. In many applications, such as cellular and


    Original     		PDF AT-41511 5964-3853E transistor C456 microstripline FR4 4.1 amplifier circuit diagram 2907A PNP bipolar transistors microstripline 41511 FR4 epoxy dielectric constant 4.4 AT-41411 AT-41486

    GVQ09253

    Abstract: No abstract text available
    Text: GaAs MMIC CGB 91 Target Data Sheet • • • • • HBT power amplifier for 800 MHz AMPS, CDMA and TDMA portable cellular phones Integrated temperature compensated bias circuit Power down control CMOS- switchable high/low-power mode Internal input match


    Original     		PDF P-VQFN-24-3 GVQ09253 GVQ09253

    800 mhz Cellular amplifier circuit diagram

    Abstract: GN01125B s-mini
    Text: GaAs MMICs for Cellular Phone GN01125B Driver Amplifier for 800 MHz-Band PDC Features • • • • Matching circuit built-in Input-side,Output-side Low consumption current : I DD = 15 mA High gain : PG = 18 dB Small package : S-Mini Type . 6-pin Characteristics Diagram


    Original     		PDF GN01125B 800 mhz Cellular amplifier circuit diagram GN01125B s-mini

    smd code marking book

    Abstract: smd code book marking code H2 SMD GPS09230 Marking code CGB
    Text: GaAs HBT CGB 90 Preliminary Data Sheet • • • • • HBT power amplifier for 800 MHz AMPS, CDMA and TDMA portable cellular phones Integrated temperature compensated bias circuit Power down control CMOS-switchable high/low-power mode Simple input and output match on PCB


    Original     		PDF P-TSSOP-10-2 Q62702-G0112 GPS09230 smd code marking book smd code book marking code H2 SMD GPS09230 Marking code CGB

    Untitled

    Abstract: No abstract text available
    Text: GaAs Module CGM 800C Target Data Sheet • • • • • • HBT power amplifier module for 800 MHz AMPS and CDMA portable cellular phones Integrated temperature compensated bias circuit Power down control CMOS-switchable high/low-power mode Input and output matched to 50 Ω


    Original     		PDF EHT09232

    Untitled

    Abstract: No abstract text available
    Text: GaAs Module CGM 800C Target Data Sheet • • • • • • HBT power amplifier module for 800 MHz AMPS and CDMA portable cellular phones Integrated temperature compensated bias circuit Power down control CMOS-switchable high/low-power mode Input and output matched to 50 Ω


    Original     		PDF EHT09232

    nf 829

    Abstract: No abstract text available
    Text: RF410 Tx Application-Specific Integrated Circuit ASIC for IS-136 TDMA/AMPS Cellular Telephone The RF410 Tx Application-Specific Integrated Circuit (ASIC) is a triplemode, dual-band transmitter intended to be used in IS-136 compliant cellular phones. As a dual mode IC it can be used in TDMA mode or


    Original     		PDF RF410 IS-136 RF410 nf 829

    TQ9222

    Abstract: IS-136 QSOP-24 TQ5121
    Text: WIRELESS COMMUNICATIONS DIVISION TQ9222 Vdd LNA OUT MXR LO MXR 1900 1900 1900 Vdd LNA 1900 MXR RF 1900 DATA SHEET MXR IF 1900 Dual-Band TDMA LNA/Downconverter IC LNA IN 1900 Vdd LNA 800 MXR IF 800 LNA IN 800 MXR RF 800 LNA OUT Vdd 800 MXR 800 Features MXR LO


    Original     		PDF TQ9222 TQ5121 TQ9222 IS-136 QSOP-24 TQ5121

    890 MHz Low Pass Filter

    Abstract: No abstract text available
    Text: 200MHz to 3GHz High Linearity Y-Mixer ADL5350 Preliminary Technical Data FEATURES FUNCTIONAL BLOCK DIAGRAM Broadband RF, IF and LO Ports Low Conversion Loss Noise figure : 6dB High Input IP3: 26dBm High Input P1dB: 17dBm Low LO drive level Single-Ended Design: No Need for Baluns


    Original     		PDF 200MHz 26dBm 17dBm ADL5350 ADL5350 ADL5350ACPZREEL71 ADL5350ACPZ-WP1 ADL5350-EVAL PR05615 890 MHz Low Pass Filter

    GN02039B

    Abstract: GN02029B GN02034B GN01096B GN01105B GN01121B GN01125B GN01140B GN01154B GN02037B
    Text: Caution for Safety • Gallium arsenide material GaAs is used in this product. DANGER Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when


    Original     		PDF

    FET differential amplifier circuit

    Abstract: CIRCUIT DIAGRAM FOR IC 810 MD59-0039 MD59-0039RTR MD59-0039TR
    Text: MD59-0039 Cellular CDMA Upconverter / Driver 820 - 850 MHz LOA VDD MIX OUT 1 RFA VDD IF IN+ RFA SRC IF IN- RFA IN GND DRV SRC1 DRV VDD1 IF- VDD DRV VDD2 VVA CNTL DRV OUT IF+ VDD DRV SRC 2 M/A-COM’s MD59-0039 upconverter IC for cellular CDMA applications integrates a mixer, RF amplifier, IF amplifier, and


    Original     		PDF MD59-0039 MD59-0039 MO-220A FET differential amplifier circuit CIRCUIT DIAGRAM FOR IC 810 MD59-0039RTR MD59-0039TR

    UPC8112T

    Abstract: UPC8112T-E3
    Text: 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER UPC8112T INTERNAL BLOCK DIAGRAM FEATURES • BROADBAND OPERATION: RF Input: 800 - 2000 MHz IF Output: 100 - 300 MHz IF Output RF Input • INPUT IP3: -7 dBm • LOW VOLTAGE OPERATION: 2.7~3.3 V • LOW CURRENT CONSUMPTION: 8.5 mA


    Original     		PDF UPC8112T UPC8112T UPC8112T-E3 34-6393/FAX UPC8112T-E3

    MAX2292

    Abstract: Motorola transceiver chip 100 MHz to 4GHz MAX2382 ericsson single line module 900 GSM Max2606 fm transmitter Single Chip L-band Tuner DVB Satellite MAX2620 Cellular RF Transmitter 1900 2400 MHz MAX2750 MAX2451
    Text: WIRELESS Data Sheets ANALOG DESIGN SOLUTIONS Applications Notes • Free Samples • Chip-Scale PA Delivers +22.5dBm Output Power for 2.4GHz 4. HIGHER 5dB POWE 802.11b WLAN PRISM R THAN II PA! +2.7V TO +3.6V SUPPLY BIAS DET OUT 1. DETECTOR mm 5 • 28.5dB GAIN


    Original     		PDF MAX2242 MAX1687/1688 MAX4473 MAX1007 MAX104 MAX106 MAX108 MAX1002 MAX1003 MAX1005 MAX2292 Motorola transceiver chip 100 MHz to 4GHz MAX2382 ericsson single line module 900 GSM Max2606 fm transmitter Single Chip L-band Tuner DVB Satellite MAX2620 Cellular RF Transmitter 1900 2400 MHz MAX2750 MAX2451

    2 LOIF

    Abstract: UPC8112T UPC8112T-E3
    Text: 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER UPC8112T INTERNAL BLOCK DIAGRAM FEATURES • BROADBAND OPERATION: RF Input: 800 - 2000 MHz IF Output: 100 - 300 MHz IF Output RF Input • INPUT IP3: -7 dBm • LOW VOLTAGE OPERATION: 2.7~3.3 V • LOW CURRENT CONSUMPTION: 8.5 mA


    Original     		PDF UPC8112T UPC8112T UPC8112T-E3 24-Hour 2 LOIF UPC8112T-E3

    sfgcg450

    Abstract: 450 khz IF Filter EVB3030A IS136 IS-136 IS-54 LUCW3030ACA LUCW3030ACA-DB W3030 ba 8316
    Text: Data Sheet April 1999 W3030 3 V Dual-Mode IF Cellular Receiver Features n n n n Proven double conversion architecture:  First IF capability: 10 MHz to over 1000 MHz  Second IF capability: 0.2 MHz to 2.0 MHz n Low supply current n Analog received signal strength indicator RSSI


    Original     		PDF W3030 IS-136 DS98-399WRF DS97-174WRF) sfgcg450 450 khz IF Filter EVB3030A IS136 IS-136 IS-54 LUCW3030ACA LUCW3030ACA-DB ba 8316

    4456-P

    Abstract: No abstract text available
    Text: In fineon ♦s*î hno!09 CGB 91 GaAs MMIC Target Data Sheet • HBT power amplifier for 800 MHz AMPS, CDMA and TDMA portable cellular phones • Integrated temperature compensated bias circuit • Power down control • CMOS- switchable high/low-power mode


    OCR Scan     		PDF P-VQFN-24-3 4456-P

    Untitled

    Abstract: No abstract text available
    Text: Infineon I wc h n c i o g i «* GaAs Module Target Data Sheet • • • • • • HBT power amplifier module for 800 MHz AMPS and CDMA portable cellular phones Integrated temperature compensated bias circuit Power down control CMOS-switchable high/low-power mode


    OCR Scan     		PDF EHT09232

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR WIRELESS COMMUNICATIONS DIVISION TQ9222 DATASHEET Dual-Band TDMA LNA/Downconverter 1C 800 M XR800 Features 800 Product Description The TQ9222 is a 3- V, RF receiver 1C designed specifically for dual-band TDMA applications. Its RF performance meets the requirements of products designed to


    OCR Scan     		PDF TQ9222 XR800 TQ9222 IS-136 TQ5121 QSOP-24 QSOP-24

    Untitled

    Abstract: No abstract text available
    Text: 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER FEATURES upC8112T INTERNAL BLOCK DIAGRAM BROADBAND OPERATION: RF Input: 800 - 2000 MHz IF Output: 100- 300 MHz INPUT IP3: -7 dBm LOW VOLTAGE OPERATION: 2.7~3.3 V LOW CURRENT CONSUMPTION: 8.5 mA POWER SAVE FUNCTION


    OCR Scan     		PDF upC8112T UPC8112T UPC8112T-E3

    RF251

    Abstract: No abstract text available
    Text: *1* Rockw ell Semiconductor Systems RF251 Tx ASIC for CDMAr AMPS, and PCS Applications Product Description Applications The RF251 Tx Application-Specific Integrated Circuit ASIC is a triple-mode, dual-band transmitter intended to be used in Code Division Multiple Access (CDMA)


    OCR Scan     		PDF RF251

    6bta

    Abstract: 2.4 ghz FM RECEIVER CIRCUIT DIAGRAM
    Text: m Advance Data Sheet January 1993 Microelectronics W2005 1 GHz to Baseband FM and DQPSk Cellular Receiver Features Applications • 800 MHz to 1 GHz RF-IF mixer ■ IS54 North American dual-mode Cellular Radio Portable and Mobile Terminals ■ Proven double conversion architecture:


    OCR Scan     		PDF W2005 DS92-1610TH 6bta 2.4 ghz FM RECEIVER CIRCUIT DIAGRAM