circuit of MAX 5100
Abstract: SS 200 700
Text: MODEL 5100 SERIES 7/8” Diameter Single Turn Wirewound 2 Precision Potentiometer MODEL STYLES 5101 5103 1/8" Shaft, 3/8" Bushing 1/8" Shaft, Servo ELECTRICAL Resistance Range, Ohms Standard Resistance Tolerance Minimum Practical Resistance Tolerance Independent Linearity
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MIL-R-12934)
circuit of MAX 5100
SS 200 700
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PDF
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potentiometer 6163
Abstract: mil-R-39023 2k .25 turn
Text: MODEL 6143, 6163 7/8” Diameter Single Turn Conductive Plastic 2 Precision Potentiometer / Position Sensor MODEL STYLES 6143 6163 1/8” Shaft, Bronze Sleeve Bearing 1/8” Shaft, Ball Bearing ELECTRICAL Resistance Range, Ohms Standard Resistance Tolerance
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400Vdc
potentiometer 6163
mil-R-39023 2k .25 turn
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PDF
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CY14MX064Q2A
Abstract: No abstract text available
Text: CY14MB064Q CY14ME064Q 64-Kbit 8 K x 8 SPI nvSRAM 64-Kbit (8 K × 8) SPI nvSRAM Features • ■ ■ 64-Kbit nonvolatile static random access memory (nvSRAM) internally organized as 8 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated automatically on power-down (AutoStore) or by using SPI
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CY14MB064Q
CY14ME064Q
64-Kbit
64-Kbit
CY14MX064Q1A)
CY14MB064Q:
CY14ME064Q:
16-pin
CY14MX064Q2A
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PDF
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Untitled
Abstract: No abstract text available
Text: ' Pulse Electronics C6140NL ELECTRICAL SPECIFICATIONS: 25’ C DIPLEXER 5 - 1 0 0 2 / 1 1 2 5 - 1 5 2 5 MHz IMPEDANCE = 7 5 OHMS DESIGNED FOR MOCA APPLICATIONS SURFACE MOUNT INSERTION LOSS: COMMON TO LOWPASS FREQUENCY 5 - 8 6 0 MHz 8 6 0 -1 0 0 2 MHz - 0 . 8 dB MAX
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C6140NL
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PDF
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7486
Abstract: BI technologies Turns
Text: Model 7480 7/8” Diameter 5 Turn Wirewound Precision Potentiometer MODEL STYLES AVAILABLE 7481 1/8” Shaft, 1/4” Bushing 7483 1/8” Shaft, Servo 7486 1/4” Shaft, 3/8” Bushing 7488 for heavy side load applications 1/4” Shaft, 3/8” Bushing ELECTRICAL1
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PDF
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Untitled
Abstract: No abstract text available
Text: Model 7380 7/8” Diameter 3 Turn Wirewound Precision Potentiometer MODEL STYLES AVAILABLE 7381 1/8” Shaft, 1/4” Bushing 7383 1/8” Shaft, Servo 7386 1/4” Shaft, 3/8” Bushing 7388 for heavy side load applications 1/4” Shaft, 3/8” Bushing ELECTRICAL1
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7286
Abstract: 7286r 2606S 2607S 2646S 2647S potentiometer 7286
Text: MODEL 7280 SERIES 7/8” Diameter 10-Turn Wirewound 2 Precision Potentiometer MODEL STYLES 7281 7283 7284 7286 7288 for heavy side load applications NEW PRODUCT 1/8” Shaft, 1/4” Bushing 1/8” Shaft, Servo 6mm Shaft, 3/8” Bushing 1/4” Shaft, 3/8” Bushing
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Original
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10-Turn
2606S,
2607S,
2646S,
2647S,
7286
7286r
2606S
2607S
2646S
2647S
potentiometer 7286
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PDF
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2606S
Abstract: 2607S 2646S 2647S
Text: MODEL 7380 SERIES 7/8” Diameter 3–Turn Wirewound 2 Precision Potentiometer MODEL STYLES 7381 7383 7386 7388 for heavy side load applications NEW PRODUCT 1/8” Shaft, 1/4” Bushing 1/8” Shaft, Servo 1/4” Shaft, 3/8” Bushing 1/4” Shaft, 3/8” Bushing
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Original
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2606S,
2607S,
2646S,
2647S
2606S
2607S
2646S
2647S
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PDF
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7486
Abstract: 7483 and 7486 7483 datasheet 7486 2606S 2607S 2646S 2647S
Text: MODEL 7480 SERIES 7/8” Diameter 5–Turn Wirewound 2 Precision Potentiometer MODEL STYLES 7481 7483 7486 7488 for heavy side load applications NEW PRODUCT 1/8” Shaft, 1/4” Bushing 1/8” Shaft, Servo 1/4” Shaft, 3/8” Bushing 1/4” Shaft, 3/8” Bushing
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Original
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2606S,
2607S,
2646S,
2647S,
7486
7483 and 7486
7483
datasheet 7486
2606S
2607S
2646S
2647S
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PDF
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FT-23
Abstract: PE-T400
Text: PASTERNACK ENTERPRISES P E -T 4 0 0 IMPEDANCE: 5 0 OHMS INNER CONDUCTOR DIAMETER: .1 0 8 ” INNER CONDUCTOR MATERIAL: SOLID BARE COPPER CLAD ALUMINIUM DIELECTRIC DIAMETER: .2 8 5 ” DIELECTRIC MATERIAL: FOAM POLYETHYLENE NUMBER OF SHIELDS: 2 SHIELD MATERIAL:
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PE-T400
FT-23
PE-T400
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PDF
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26c18
Abstract: ST2100 ST2101 1103h MUX41 TABLE10-1 1185H PCC5
Text: ST Sitronix ST2100 8 BIT Microcontroller with 2M bytes ROM PRELIMINARY Notice: This is not a final specification. Some parameters are subject to change. 1. FEATURES 8-bit static pipeline CPU ROM: 2M x 8 bits RAM: 4K x 8 bits External memory control up to 8M x 8 bits
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ST2100
timer/16-bit
128-level
ST2101
A22/CSB0,
Page18
2002-Jul-25
26c18
ST2100
1103h
MUX41
TABLE10-1
1185H
PCC5
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PDF
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Untitled
Abstract: No abstract text available
Text: I It 0 .5 2 8 + 0 .0 1 0 [1 3 .4 1 + 0 .2 5 ] U 0.901 [2 2 .8 9 ] 2X 0 .7 8 4 + 0 .0 1 0 [1 9 .9 1 + 0 .2 5 ] < i> < i> < i> < l> - 0 .9 8 4 + 0 .0 0 8 [2 4 . 9 8 + 0 . 2 0 ] - 1. MATERIALS AND FINISHES: INSULATOR: GLASS FILLED POLYESTER PER M IL -M -2 4 5 1 9 , UL 9 4 V -0 , BLACK COLOR.
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28i9a
ODD15M56R7000
SK9468
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PDF
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Untitled
Abstract: No abstract text available
Text: Features • AUDIO CODEC • • • • • • • – 100dB Dynamic Range Stereo Audio DAC - 8 to 96 kHz sampling frequency – 96dB Dynamic Range Stereo Audio ADC - 8 to 96 kHz sampling frequency – 16 / 32 Ohms headset amplifier with capless operation
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100dB
16Ohms
1050Aâ
07-Apr-10
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PDF
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P82A203
Abstract: P82C202 CS8220 P82A204 RAS 0510 KMC 2120 82C201 82c202 cpu P82C201-10 82C202
Text: 82C201, 8 2 C 2 0 1 -1 0 /8 2 C 2 0 2 /8 2 A 2 0 3 /8 2 A 2 0 4 /8 2 A 2 0 5 CS8220: PC/AT COMPATIBLE C H IP S e t“ • Fully IBM'" PC AT Compatible ■ Flexible architecture allows usage in any iAPX 286 design ■ Early ALE Generation ■ Early RAS Generation
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82C201,
82C201-10/82C202/82A203/82A204/82A205
CS8220:
82C201
82C202,
82A203,
82A204
82A205
CS8220
P82A203
P82C202
P82A204
RAS 0510
KMC 2120
82c202 cpu
P82C201-10
82C202
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PDF
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Untitled
Abstract: No abstract text available
Text: CY14B108L CY14B108N 8-Mbit 1024 K x 8/512 K × 16 nvSRAM 8-Mbit (1024 K × 8/512 K × 16) nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS)
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CY14B108L
CY14B108N
CY14B108L)
CY14B108N)
44-/54-pin
48-ball
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PDF
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Untitled
Abstract: No abstract text available
Text: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144-Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks
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256Mb:
256Mb
09005aef81121545/source:
09005aef810c0ffc
256Mbx16x32RLDRAM
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PDF
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MT41J256M16
Abstract: MT41J512M8RH K1012 MT41J512M8RH125
Text: 4Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J1G4 – 128 Meg x 4 x 8 banks MT41J512M8 – 64 Meg x 8 x 8 banks MT41J256M16 – 32 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • Marking • Configuration
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Original
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MT41J1G4
MT41J512M8
MT41J256M16
819Way,
09005aef8417277b
MT41J256M16
MT41J512M8RH
K1012
MT41J512M8RH125
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PDF
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Untitled
Abstract: No abstract text available
Text: 52184 PRI Line 1 8 3 2 6 7 4 5 SEC (Device) ELECTRICAL SPECIFICATIONS @ 25°C unless otherwise noted: LONGITUDINAL BALANCE: TBDdB min., 100k-17MHz, per ITU Method (L->M). D.C. RESISTANCE (@20°C): 1-3 , 0.630 Ohms ±10%. 2-4 , 0.630 Ohms ±10%. 8-6 , 0.320 Ohms ±10%.
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Original
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100k-17MHz,
1500VAC,
1875VAC
600VAC,
850VDC
100kHz,
100mVAC,
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PDF
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Untitled
Abstract: No abstract text available
Text: EIC1011-8 10.70-11.70 GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • • • 10.70 – 11.70 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 6 dB Power Gain at 1dB Compression 30% Power Added Efficiency
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Original
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EIC1011-8
EIC1011-8
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PDF
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micron ddr3
Abstract: No abstract text available
Text: 2Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J512M4 – 64 Meg x 4 x 8 Banks MT41J256M8 – 32 Meg x 8 x 8 Banks MT41J128M16 – 16 Meg x 16 x 8 Banks Options1 Features • • • • • • • • • • • • • • • • • • Marking
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MT41J512M4
MT41J256M8
MT41J128M16
09005aef826aaadc
micron ddr3
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PDF
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MT41J256M16
Abstract: MT41J512M8R MT41J512M8RA-15 MT41J512M8RA MT41J512M8RA-15E MT41J512M8RA15E MT41J512M8
Text: 4Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J1G4 – 128 Meg x 4 x 8 banks MT41J512M8 – 64 Meg x 8 x 8 banks MT41J256M16 – 32 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • Marking • Configuration
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MT41J1G4
MT41J512M8
MT41J256M16
09005aef8417277b
MT41J256M16
MT41J512M8R
MT41J512M8RA-15
MT41J512M8RA
MT41J512M8RA-15E
MT41J512M8RA15E
MT41J512M8
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PDF
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Untitled
Abstract: No abstract text available
Text: 2Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J512M4 – 64 Meg x 4 x 8 Banks MT41J256M8 – 32 Meg x 8 x 8 Banks MT41J128M16 – 16 Meg x 16 x 8 Banks Options1 Features • • • • • • • • • • • • • • • • • • • Configuration
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Original
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MT41J512M4
MT41J256M8
MT41J128M16
09005aef826aaadc
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PDF
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PE7004-7
Abstract: No abstract text available
Text: wMERIALS BODY CONTACT INSULATOR COUPLING NUT PASSIVATED STAINLESS STEEL GOLD PLATED PTFE BRASS NICKEL PLATED SPEC IFICATIO N S FREQUENCY RANGE: DC TO 18 GHz ATTENUATION: 7 dB IMPEDANCE: 5 0 OHMS ACCURACY: + .5 dB DC - 4 GHz 1.15:1 4 GHz - 8 GHz 1.20:1 8 GHz - 1 2 .4 GHz
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PE7004-7
PE7004-7
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PDF
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RF7201
Abstract: HSPA Module
Text: RFMD. RF7201 WCDMA/HSPA+ Band 1/8 Dual-band Linear PA Module The RF7201 is a high-power, high-efficiency, dual-band linear power amplifier PA module designed for use in 3 V, 50-ohm WCDMA-enabled mobile devices. This module is optimized to operate in Bands 1 and 8 for
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RF7201
RF7201
50-ohm
14-pin,
HSPA Module
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PDF
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