7Z83041 Search Results

BB909

Abstract: T95 Diod BB909A BB909B IEC134
Contextual Info: 5bE » T l lQöEb □ □ 4 D M 0 C1 273 H P H I N BB909A BB909B •HILIPS I N T E R N A T I O N A L SbE D T - Û 7 - 1 '? SILICON PLANAR VARIABLE CAPACITANCE DIODE The BB909 is a variable capacitance diode in a glass envelope intended for electronic tuning in v.h.f.

Contextual Info: N AMER PHILIPS/DISCRETE • b*1E D bbS3T31 DQ2bmi 674 I Jl APX BB405B UHF VARIABLE CAPACITANCE DIODE The B6405B is a silicon variable capacitance diode in a hermetically sealed glass envelope and intended for application in UHF tuners. This miniature diode can be mounted on a 2 E 5,08 mm pitch.

1N821

Abstract: N821 1N821A 1N825 N821A DIODE 1N825 1N827A 1N823 1N827 1N829
Contextual Info: • bL53T31 002L.flfl5 Mb? H A PX N AMER PHILIPS/DISCRETE b^E 1N821 to 1N829 1N821A to 1N829A J> VOLTAGE REFERENCE DIODES Voltage reference diodes in a DO-34 envelope. They have a very low temperature coefficient and are primarily intended for use as voltage reference sources in measuring instruments such as digital

pj 929 diode picture

Abstract: bf471 A7R SMD Transistor TDA8391 transistor f488 tda8351 pin-compatible tda1000 Germanium drift transistor marking 3U 3T 3C diode germanium transistor
Contextual Info: Philips Sem iconductors Semiconductors for Television and Video Systems Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintainance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors 31 Pro Electron type numbering system for Integrated Circuits

BA423

Contextual Info: blE D • bbâB^Bl DD2blb3 MST M A P X N AUER PHILIPS/DIS CRET E BA423 _ SILICON A.M. BAND SWITCHING DIODE The BA 423 is a switching diode in hermetically sealed glass DO-34 envelope. Intended for band switching in a.m. radio receivers. Q U IC K R E F E R E N C E D A T A

Diode Marking 1e

Abstract: diode HOH BA223 AM radio AM band switching diode
Contextual Info: N AÍ1ER PHILIPS/DISCRETE b^E D m b b S B ^ l GQEblUS MOM I IAPX BA223 I SILICON A.M. BAND SWITCHING DIODE The BA223 is a switching diode in whiskerless glass encapsulation. It is intended for band switching in a.m. radio receivers. QUICK REFERENCE DATA Continuous reverse voltage

Contextual Info: N AUER PHILIPS/DISCRETE tiTE D • btiSBTBl DDBb?3M DIM H A P X B ZV 10 to 14 J V. VOLTAGE REFERENCE DIODES The BZV10 to 14 are temperature compensated voltage reference diodes in a DO-34 envelope. They are primarily intended fo r use as voltage reference sources in measuring instruments such as digital

26166

Abstract: BA223 AM band switching diode diode D 07-15 15
Contextual Info: SbE T> 71100Sb m 00400*13 333 • P H I N BA223 T-D7-! S' PHILIPS INTERNATIONAL SbE ]> T O SILICON A.M. BAND SWITCHING DIODE The B A 223 is a switching diode in whiskerless glass encapsulation. It is intended fo r band switching in a.m. radio receivers. Q U IC K R E F E R E N C E D A T A

BB417

Contextual Info: N AMER PHILIPS/DISCRETE b'ìE D • ^53*131 DD2b414 5Û3 I IAPX BB417 J l VARIABLE CAPACITANCE DIODE The BB417 is a silicon variable capacitance diode in a hermetically sealed glass DO-34 envelope. The diode is primarily intended for automatic frequency control in television receivers.

BZV14

Abstract: BZV12 BZV13 BZV10 BZV11
Contextual Info: N AMER PHILIPS/DISCRETE t.*ìE D • tbSBTBl QDEb?34 014 « A P X I B Z V 1 0 to 14 VOLTAGE REFERENCE DIODES The B Z V 10 to 14 are temperature compensated voltage reference diodes in a DO-34 envelope. They are primarily intended fo r use as voltage reference sources in measuring instruments such as digital

Contextual Info: N AUER PHILIPS/DISCRETE b'lE D APX bb53T31 DDEblb? D75 U.H.F. MIXER DIODE Silicon epitaxial Schottky-barrier diode in a DO-34 envelope and intended for mixer applications in u.h.f. tuners, t.v. modulators and r.f. detectors. QUICK REFERENCE DATA Continuous reverse voltage

BB405B

Contextual Info: b*ìE D N AMER PHILIPS/DISCRETE • bb53^31 OQEbMll Ö74 I IAPX '' BB405B A UHF VARIABLE CAPACITANCE DIODE The BB405B is a silicon variable capacitance diode in a hermetically sealed glass envelope and intended fo r application in UHF tuners. This miniature diode can be mounted on a 2 E 5,08 mm pitch.

BB405B

Abstract: IEC134
Contextual Info: SL.E D 711Da2b 0 0 4 0 3 0 5 TOT « P H I N • PHILIP S INT ER N AT I ONAL BB405B T 07 SbE ]> - - 1*1 UHF. VARIABLE CAPACITANCE DIODE The BB405B is a silicon variable capacitance diode in a hermetically sealed glass envelope and intended fo r application in U H F tuners.

1N821

Abstract: 1N829 1N825 1N821A 1N823 1N827 1N829A philips 1n823 si10010
Contextual Info: SbE philips T> 711DÖEb OOMG'ìBS TTT • PHIN 1N821 to 1N829 1N821A to 1N829A sbE D international m VOLTAGE REFERENCE DIODES Voltage reference diodes in a DO-34 envelope. They have a very low temperature coefficient and are primarily intended for use as voltage reference sources in measuring instruments such as digital

TELEVISION EHT TRANSFORMERS

Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Contextual Info: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes

BA482

Abstract: BA483 BA484
Contextual Info: LTE D • BA482 BA483 BA484 IAPX □D2blbc] T4B N AMER PHILIPS/DISCRETE SILICON PLANAR DIODES S w itching diodes in th e su bm iniature D O -3 4 glass envelope, intended fo r band sw itching in v .h .f. television tuners. Special featu re o f th e diodes is th e ir low capacitance.

Contextual Info: bbSBTBl 002bflfl5 4b7 • APX N AUER PHILIPS/DISCRETE 1N821 to 1N829 1N821A to 1N 829A b^E J> VOLTAGE REFERENCE DIODES Voltage reference diodes in a DO-34 envelope. They have a very low temperature coefficient and are primarily intended for use as voltage reference sources in measuring instruments such as digital

BA423

Contextual Info: blE D • bbâB^Bl DD2blb3 MST M A P X N AUER PHILIPS/DISCRETE BA423 _ SILICON A.M. BAND SWITCHING DIODE The BA 423 is a switching diode in hermetically sealed glass DO-34 envelope. Intended for band switching in a.m. radio receivers. Q U IC K R E F E R E N C E D A T A

diode BY 399

Abstract: BB909 BB909A BB909B
Contextual Info: N AUER P H I L I P S / D I S C R E T E b b S B ^ l Q0Sb433 435 BB909A BB909B b*ìE D IAPX I SILICON PLANAR VARIABLE CAPACITANCE DIODE The BB909 is a variable capacitance diode in a glass envelope intended for electronic tuning in v.h.f. television tuners fo r C.A.T.V. applications.

Rf Detectors

Abstract: tSA401 BA481 noise diode mixer diode KMW450 BB533
Contextual Info: N AMER PHILIPS/DISCRETE b*ÌE D m b b S 3 T31 DDEblb? 07 S BiAPX BA4Ö 1 A U.H.F. MIXER DIODE S ilico n epitaxial S c h o ttk y -b a rrie r diode in a DO -34 envelope and intended fo r m ixe r applica tio n s in u .h .f. tuners, t.v. m odulators and r.f. detectors.