BB909
Abstract: T95 Diod BB909A BB909B IEC134
Text: 5bE » T l lQöEb □ □ 4 D M 0 C1 273 H P H I N BB909A BB909B •HILIPS I N T E R N A T I O N A L SbE D T - Û 7 - 1 '? SILICON PLANAR VARIABLE CAPACITANCE DIODE The BB909 is a variable capacitance diode in a glass envelope intended for electronic tuning in v.h.f.
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BB909A
BB909B
BB909
T-07-19
7Z88467
T95 Diod
BB909A
BB909B
IEC134
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE • b*1E D bbS3T31 DQ2bmi 674 I Jl APX BB405B UHF VARIABLE CAPACITANCE DIODE The B6405B is a silicon variable capacitance diode in a hermetically sealed glass envelope and intended for application in UHF tuners. This miniature diode can be mounted on a 2 E 5,08 mm pitch.
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bbS3T31
BB405B
B6405B
SbM13
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1N821
Abstract: N821 1N821A 1N825 N821A DIODE 1N825 1N827A 1N823 1N827 1N829
Text: • bL53T31 002L.flfl5 Mb? H A PX N AMER PHILIPS/DISCRETE b^E 1N821 to 1N829 1N821A to 1N829A J> VOLTAGE REFERENCE DIODES Voltage reference diodes in a DO-34 envelope. They have a very low temperature coefficient and are primarily intended for use as voltage reference sources in measuring instruments such as digital
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1N821
1N829
1N821A
1N829A
DO-34
1N823;
1N825;
1N827;
1N829;
DO-34
N821
1N825
N821A
DIODE 1N825
1N827A
1N823
1N827
1N829
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pj 929 diode picture
Abstract: bf471 A7R SMD Transistor TDA8391 transistor f488 tda8351 pin-compatible tda1000 Germanium drift transistor marking 3U 3T 3C diode germanium transistor
Text: Philips Sem iconductors Semiconductors for Television and Video Systems Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintainance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors 31 Pro Electron type numbering system for Integrated Circuits
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BA481
SAA7197
SAA7199B
TDA4680
TDA4685
pA733C
LFC02
MEH469
pj 929 diode picture
bf471
A7R SMD Transistor
TDA8391
transistor f488
tda8351 pin-compatible
tda1000
Germanium drift transistor
marking 3U 3T 3C diode
germanium transistor
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BA423
Abstract: No abstract text available
Text: blE D • bbâB^Bl DD2blb3 MST M A P X N AUER PHILIPS/DIS CRET E BA423 _ SILICON A.M. BAND SWITCHING DIODE The BA 423 is a switching diode in hermetically sealed glass DO-34 envelope. Intended for band switching in a.m. radio receivers. Q U IC K R E F E R E N C E D A T A
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BA423
BA423
DO-34
OD-68
DO-34)
7Z83041
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Diode Marking 1e
Abstract: diode HOH BA223 AM radio AM band switching diode
Text: N AÍ1ER PHILIPS/DISCRETE b^E D m b b S B ^ l GQEblUS MOM I IAPX BA223 I SILICON A.M. BAND SWITCHING DIODE The BA223 is a switching diode in whiskerless glass encapsulation. It is intended for band switching in a.m. radio receivers. QUICK REFERENCE DATA Continuous reverse voltage
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BA223
BA223
DO-34
OD-68)
7Z83041
Diode Marking 1e
diode HOH
AM radio
AM band switching diode
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE tiTE D • btiSBTBl DDBb?3M DIM H A P X B ZV 10 to 14 J V. VOLTAGE REFERENCE DIODES The BZV10 to 14 are temperature compensated voltage reference diodes in a DO-34 envelope. They are primarily intended fo r use as voltage reference sources in measuring instruments such as digital
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BZV10
DO-34
BZV10
BZV12
BZV13
BZV14
0D5b737
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26166
Abstract: BA223 AM band switching diode diode D 07-15 15
Text: SbE T> 71100Sb m 00400*13 333 • P H I N BA223 T-D7-! S' PHILIPS INTERNATIONAL SbE ]> T O SILICON A.M. BAND SWITCHING DIODE The B A 223 is a switching diode in whiskerless glass encapsulation. It is intended fo r band switching in a.m. radio receivers. Q U IC K R E F E R E N C E D A T A
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711002b
BA223
BA223
DO-34
OD-68)
7Z83041
7Z78761
26166
AM band switching diode
diode D 07-15 15
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BB417
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'ìE D • ^53*131 DD2b414 5Û3 I IAPX BB417 J l VARIABLE CAPACITANCE DIODE The BB417 is a silicon variable capacitance diode in a hermetically sealed glass DO-34 envelope. The diode is primarily intended for automatic frequency control in television receivers.
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D02b414
BB417
BB417
DO-34
OD-68
DO-34)
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BZV14
Abstract: BZV12 BZV13 BZV10 BZV11
Text: N AMER PHILIPS/DISCRETE t.*ìE D • tbSBTBl QDEb?34 014 « A P X I B Z V 1 0 to 14 VOLTAGE REFERENCE DIODES The B Z V 10 to 14 are temperature compensated voltage reference diodes in a DO-34 envelope. They are primarily intended fo r use as voltage reference sources in measuring instruments such as digital
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BZV10
DO-34
DO-34
OD-68)
BZV11
BZV12
BZV13
BZV14
BZV14
BZV12
BZV11
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b'lE D APX bb53T31 DDEblb? D75 U.H.F. MIXER DIODE Silicon epitaxial Schottky-barrier diode in a DO-34 envelope and intended for mixer applications in u.h.f. tuners, t.v. modulators and r.f. detectors. QUICK REFERENCE DATA Continuous reverse voltage
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bb53T31
DO-34
OD-68
DO-34)
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BB405B
Abstract: No abstract text available
Text: b*ìE D N AMER PHILIPS/DISCRETE • bb53^31 OQEbMll Ö74 I IAPX '' BB405B A UHF VARIABLE CAPACITANCE DIODE The BB405B is a silicon variable capacitance diode in a hermetically sealed glass envelope and intended fo r application in UHF tuners. This miniature diode can be mounted on a 2 E 5,08 mm pitch.
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bb53T31
BB405B
BB405B
002bm3
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BB405B
Abstract: IEC134
Text: SL.E D 711Da2b 0 0 4 0 3 0 5 TOT « P H I N • PHILIP S INT ER N AT I ONAL BB405B T 07 SbE ]> - - 1*1 UHF. VARIABLE CAPACITANCE DIODE The BB405B is a silicon variable capacitance diode in a hermetically sealed glass envelope and intended fo r application in U H F tuners.
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BB405B
7Z88175
IEC134
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1N821
Abstract: 1N829 1N825 1N821A 1N823 1N827 1N829A philips 1n823 si10010
Text: SbE philips T> 711DÖEb OOMG'ìBS TTT • PHIN 1N821 to 1N829 1N821A to 1N829A sbE D international m VOLTAGE REFERENCE DIODES Voltage reference diodes in a DO-34 envelope. They have a very low temperature coefficient and are primarily intended for use as voltage reference sources in measuring instruments such as digital
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1N821
1N829
1N821A
1N829A
DO-34
1N821;
1N823;
1N825;
1N827;
1N829;
1N825
1N823
1N827
philips 1n823
si10010
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TELEVISION EHT TRANSFORMERS
Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Text: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes
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LCD01
TELEVISION EHT TRANSFORMERS
BYW96E PH
smd code Z9P
germanium transistor
BY527
EQUIVALENT BYD33D
BAX12
BB212
BB515
BBY31
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BA482
Abstract: BA483 BA484
Text: LTE D • BA482 BA483 BA484 IAPX □D2blbc] T4B N AMER PHILIPS/DISCRETE SILICON PLANAR DIODES S w itching diodes in th e su bm iniature D O -3 4 glass envelope, intended fo r band sw itching in v .h .f. television tuners. Special featu re o f th e diodes is th e ir low capacitance.
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BA482
BA483
BA484
DO-34
BA482
BA483
OD-68
DO-34)
BA484
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Untitled
Abstract: No abstract text available
Text: bbSBTBl 002bflfl5 4b7 • APX N AUER PHILIPS/DISCRETE 1N821 to 1N829 1N821A to 1N 829A b^E J> VOLTAGE REFERENCE DIODES Voltage reference diodes in a DO-34 envelope. They have a very low temperature coefficient and are primarily intended for use as voltage reference sources in measuring instruments such as digital
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002bflfl5
1N821
1N829
1N821A
DO-34
1N821;
1N823;
1N825;
1N827;
1N829;
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BA423
Abstract: No abstract text available
Text: blE D • bbâB^Bl DD2blb3 MST M A P X N AUER PHILIPS/DISCRETE BA423 _ SILICON A.M. BAND SWITCHING DIODE The BA 423 is a switching diode in hermetically sealed glass DO-34 envelope. Intended for band switching in a.m. radio receivers. Q U IC K R E F E R E N C E D A T A
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BA423
BA423
DO-34
OD-68
DO-34)
7Z83041
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diode BY 399
Abstract: BB909 BB909A BB909B
Text: N AUER P H I L I P S / D I S C R E T E b b S B ^ l Q0Sb433 435 BB909A BB909B b*ìE D IAPX I SILICON PLANAR VARIABLE CAPACITANCE DIODE The BB909 is a variable capacitance diode in a glass envelope intended for electronic tuning in v.h.f. television tuners fo r C.A.T.V. applications.
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BB909A
BB909B
BB909
BB909A
0D2b435
diode BY 399
BB909B
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Rf Detectors
Abstract: tSA401 BA481 noise diode mixer diode KMW450 BB533
Text: N AMER PHILIPS/DISCRETE b*ÌE D m b b S 3 T31 DDEblb? 07 S BiAPX BA4Ö 1 A U.H.F. MIXER DIODE S ilico n epitaxial S c h o ttk y -b a rrie r diode in a DO -34 envelope and intended fo r m ixe r applica tio n s in u .h .f. tuners, t.v. m odulators and r.f. detectors.
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tSA401
DO-34
OD-68
DO-34)
7Z83041
BA481
Rf Detectors
tSA401
noise diode
mixer diode
KMW450
BB533
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