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transistor K 1096 Abstract: BLY89C IEC134 BLY-89c 3 w RF POWER TRANSISTOR NPN Text: PHILIPS INTERNATIONAL bSE D • 711DÛ2L OObBS'H =134 ■ PHIN 11 BLY89C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage of 13,5 V . The transistor is resistance stabilized	OCR Scan	PDF	711002b BLY89C transistor K 1096 BLY89C IEC134 BLY-89c 3 w RF POWER TRANSISTOR NPN
CI Z 131 R-10 Abstract: BLW87 h a 431 transistor transistor L6 Text: N AMER PHILIPS/DISCRETE tlE » • bbS3T31 0051474 72T H A P X BL-VVO A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f, and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is	OCR Scan	PDF	bbS3T31 OT-123. 7Z67567 CI Z 131 R-10 BLW87 h a 431 transistor transistor L6
transistor tt 2222 Abstract: transistor L6 TT 2222 npn BLY89C IEC134 transistor K 1096 33F2 Text: N AMER P H I L I P S / D I S C R E T E bTE D • bbSS'ISl D O S A G E A 2 flfc> W A P X BLY89C V.H.F. POWER TRANSISTOR N-P-N s ilic o n planar e p ita xia l tra n sisto r intended fo r use in class-A, B and C operated m obile, in d u stria l and m ilita ry tra n sm itte rs w ith a n om inal su p p ly voltage o f 13,5 V . T he tra n sisto r is resistance stabilized	OCR Scan	PDF	BLY89C transistor tt 2222 transistor L6 TT 2222 npn BLY89C IEC134 transistor K 1096 33F2
transistor tt 2222 Abstract: TT 2222 npn vp10lp BLW87 sot 123 transistor L6 Text: PHILIPS INTERNATIONAL bSE J> • 711DÖ2ti DGb3371 1 ^ 3 ■I P H I N BLW87 J V _ V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is	OCR Scan	PDF	DGb3371 BLW87 OT-123. 7Z67567 transistor tt 2222 TT 2222 npn vp10lp BLW87 sot 123 transistor L6