7Y 6
Abstract: No abstract text available
Text: MA111 Variable Capacitance Diodes MA2ZV02 Silicon epitaxial planer type Unit : mm For VCO INDICATES CATHODE ● Small series resistance rD ● S-Mini package, enabling down-sizing of the equipment and auto- 1 0.4±0.15 matic insertion through taping 2 +0.1
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MA111
MA2ZV02
470MHz
7Y 6
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MARKING 7Y
Abstract: smd marking rd smd rf transistor marking MA2ZV02 smd marking CD
Text: Diodes SMD Type Silicon Epitaxial Planar Diode MA2ZV02 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features Good linearity and large capacitance-ratio in CD-VR relation +0.1 2.6-0.1 1.0max Small series resistance rD 0.375 0.475
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MA2ZV02
OD-323
MARKING 7Y
smd marking rd
smd rf transistor marking
MA2ZV02
smd marking CD
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MA2ZV02
Abstract: No abstract text available
Text: Variable Capacitance Diodes MA2ZV02 Silicon epitaxial planar type Unit : mm INDICATES CATHODE Symbol Rating Unit Reverse voltage DC VR 6 V Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C + 0.1 1.7 ± 0.1 2.5 ± 0.2 + 0.1 0.16 − 0.06
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MA2ZV02
MA2ZV02
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Untitled
Abstract: No abstract text available
Text: ࢅຫൈहࡍྯ Low Frequency Power AmplifierTransistor FHR8050 Low Frequency Power AmplifierTransistor ࢅຫൈहࡍྯ DESCRIPTION & FEATURES 概述及特點 Low Frequency Power Amplifier 低頻功率放大 Suitable for Driverv Stage of Small Motor 小馬達驅動
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FHR8050
OT-89
OT-89
FHR8050O
FHR8050Y
FHR8050G
30VIE
150mA
10mAVCE
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Untitled
Abstract: No abstract text available
Text: Variable Capacitance Diodes MA2ZV02 Silicon epitaxial planar type Unit: mm For VCO 0.30+0.10 –0.05 2 1 Reverse voltage DC VR 6 V Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.9±0.1 Unit 0.00±0.05 Rating 0.90±0.15 7˚ • Absolute Maximum Ratings Ta = 25°C
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MA2ZV02
Diode70
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7y sot23
Abstract: FHT8050Y FHT8550 marking 7Y SOt23
Text: ࢅຫൈहࡍྯ Low Frequency Power Amplifier Transistors FHT8050 Low Frequency Power Amplifier Transistors ࢅຫൈहࡍྯ DESCRIPTION & FEATURES 概述及特點 Suitable for Driver Stage of Small Motor 小馬達驅動 Complementary to FHT8550 與 FHT8550 互補
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FHT8550
OT-23
FHT8050
OT-23
hFE1FHT8050O
FHT8050Y
30VIE
100mA
800mA
7y sot23
FHT8550
marking 7Y SOt23
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7y sot23
Abstract: FHT8050G FHT8050Y FHT8050 FHT8050O FHTA8550 7y marking marking 7Y SOt23
Text: 广东肇庆风华新谷微电子有限公司 广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 Low Frequency Power Amplifier Transistors 低频功率放大三极管 NPN Silicon FHT8050 FEATURES 特点
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FHT8050)
FHTA8550
FHT8050O
FHT8050Y
OT-23
7y sot23
FHT8050G
FHT8050
FHTA8550
7y marking
marking 7Y SOt23
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UDZS2V4B
Abstract: UDZSxxxB Series SOD-323L dj8j marking 8J dj-8j D47N
Text: UDZSxxxB Series 200 mW SOD-323L Series Surface Mount Zener Voltage Regulator Diodes Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOD-323L FEATURES z z A VZ range selection, 2.4 V ~ 36 V Green EMC B PACKAGING INFORMATION
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OD-323L
OD-323L
OD-323L,
MIL-STD-202,
60-cycle
01-June-2008
UDZS2V4B
UDZSxxxB Series
SOD-323L
dj8j
marking 8J
dj-8j
D47N
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MM3Z4V7B
Abstract: 8D-11 MM3Z10B MM3Z11B MM3Z12B MM3Z13B MM3Z15B MM3Z16B MM3Z18B MM3Z39B
Text: Certificate : TH97/10561QM MM3Z2V0B - MM3Z39B Certificate : TW00/17276EM ZENER DIODES VZ : 2.0 to 39 V PD : 300 mW 1.35 1.15 1.80 1.60 0.40 0.25 SOD-323 1.10 0.80 * Total power dissipation : max. 300 mW * Small plastic package suitable for surface mount design
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TH97/10561QM
MM3Z39B
TW00/17276EM
OD-323
OD-323
MM3Z24B
MM3Z27B
MM3Z30B
MM3Z33B
MM3Z36B
MM3Z4V7B
8D-11
MM3Z10B
MM3Z11B
MM3Z12B
MM3Z13B
MM3Z15B
MM3Z16B
MM3Z18B
MM3Z39B
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FHR8050
Abstract: FHR8050G FHR8050O FHR8050Y marking 15A sot-89
Text: 广东肇庆风华新谷微电子有限公司 广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 Low Frequency Power Amplifier Transistors 低频功率放大三极管 NPN Silicon FHR8050 FEATURES 特点
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FHR8050)
FHR8050O
FHR8050Y
OT-89
FHR8050
FHR8050G
marking 15A sot-89
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MM3Z7V5B
Abstract: MM3Z3V3B MM3Z10B MM3Z11B MM3Z12B MM3Z13B MM3Z15B MM3Z16B MM3Z39B MM3Z3V9B
Text: TH97/2478 MM3Z2V2B - MM3Z39B TH09/2479 IATF 0060636 SGS TH07/1033 ZENER DIODES 1.35 1.15 1.80 1.60 0.40 0.25 SOD-323 VZ : 2.2 to 39 V PD : 300 mW FEATURES : 1.10 0.08 surface mount design * High reliability * Pb / RoHS Free 0.15 max * Total power dissipation : max. 300 mW
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TH97/2478
MM3Z39B
TH09/2479
TH07/1033
OD-323
OD-323
MM3Z20B
MM3Z22B
MM3Z24B
MM3Z27B
MM3Z7V5B
MM3Z3V3B
MM3Z10B
MM3Z11B
MM3Z12B
MM3Z13B
MM3Z15B
MM3Z16B
MM3Z39B
MM3Z3V9B
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TY-307P
Abstract: No abstract text available
Text: 7Y-307P.DC2 PRODUCTION TESTS "TY-307P" TO READ TOWARD PINS 1 & 2 DOT NEXT TO #1 PIN ON BOBBIN FLANGE TURNS RATIO: 100% 1-2= 43 NOM DC RESISTANCE 3-4=61 NOM IN OHMS APPLY: 1V300 HZ 1-2 MIN INDUCTANCE: 2 HY .250 +/- .025 .781 REF HIPOT: MOUNTING PATTERN 1500V P-S.C
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rry-307P
TY-307P"
TY-307P
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Untitled
Abstract: No abstract text available
Text: 44474 d OF P.C. BOARD HOLES REF. T r I.40± .05 i •D IA . 7Y P (4.20± .I0) - „217 + r-o 44474 J (5.50 (5.50 „ I85±„003 (3„00±„05) DIA (4.70±.( „055 ±„002 ( l„40±.05) CK7. NO. I — * RECOMMENDED HOLE LA Y O U T FOR .0 7 0 / (1 .7 8 ) MAX. TH IC K
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SY57EM
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MIS us army
Abstract: ltsx 1N831A 1N831
Text: « « -T T n 1 A F * A A f n P C% / T ’ T \ I V l l l v - ö - I V ^ U U / ¿D Z ü iL . 25 MARCH 1966 MILITARY SPECIFICATION c rr iM r r n \ m T ì p t a dI I nJ - T rA \J 7Y il Vr ii U? i T l l L i V l ^ J L / U \ j 1 V O ^ T ìT A T ìT ? J L /X V J L /U j
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1N831A
MIL-S-19500
MIS us army
ltsx
1N831A
1N831
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sot-23 marking 7z
Abstract: MARKING A8C SOT-23 7y sot23 MMBR941BLT1 SOT-23 A8A marking 7m marking 7Y SOt23 RF Transistors markING 7Z MMBR920LT1
Text: SOT-23 TRANSISTORS continued Plastic-Encapsulated Bias Resistor Transistors for General-Purpose Applications Pinout: 1-Base, 2-Emltter, 3-Collector hpE@ lc V (BR)CEO Marking Device NPN PNP NPN PNP Volts (Min) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1
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OT-23
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMBTA06LT1
sot-23 marking 7z
MARKING A8C SOT-23
7y sot23
MMBR941BLT1
SOT-23 A8A
marking 7m
marking 7Y SOt23
RF Transistors
markING 7Z
MMBR920LT1
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Untitled
Abstract: No abstract text available
Text: M ODELS T 7 Y A and T 7 Y B C e rm e t T rim m e rs M in ia tu re , In d u s tria l G ra d e FEA TU R ES A P P L IC A T IO N S • • • • • The T7 trimmer is only .275" [7.0mm] in diameter and fits almost anywhere. A dust sealed plastic case protecting
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470M2
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1-435802-5
Abstract: AMP 435802-5 3B marking code
Text: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R A LL C O P Y R IG H T By P U B L IC A T IO N R IG H TS 2 - , - R E V IS IO N S RESERVED. AD - 00 D E S C R IP T IO N AL 2 RE VISED RER ECO-11-004820 RK HMR I MAR 11 .1 4 + .0 2 TYP CLOSE NO POSITION MARKING.
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6-435802-open
1-435802-5
AMP 435802-5
3B marking code
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Untitled
Abstract: No abstract text available
Text: XFWBC Shielded T ra n s fo rm e r Series * MINIATURE SURFACE MOUNT PACKAGE * VARIOUS IMPEDANCE RATIOS AVAILABLE * EXCELLENT INSERTION LOSS * IDEAL FOR BALANCED-TO-UNBALANCED APPLICATIONS * OPERATING TEMPERATURE: 0°C TO + 7 0 8C P art Turns Ratio ±4% N um ber
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XFWBC02001OOS
XFWBC0200900S
XFWBC0201300S
XFWBC0300200S
XFWBC0300500S
XFWBC0301400S
XFWBC0300950S
XFWBC0400033S
XFWBC0400300S
XFWBC040110OS
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. IT D COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 2 3 - LOC ALL RIGHTS RESERVED. REVISIONS DIST AD 00 P LTR 0 1 HOUSING MATERIAL: GLASS-FILLED, DESCRIPTION DATE DWN BC AS 03MAY2007 REV PER ECO—0 7 —001967
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03MAY2007
31MAR2000
05MAY05
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marking sb diode
Abstract: S20LC60 marking JC diode S20LC60US
Text: Super Fast Recovery Diode Twin Diode U K W . OUTLINE S20LC60US 600V 20A Feature •raBEEFRD * High Voltage Super FRD >Low Noise >trr=25ns * Small 9\c •e y -<X » trr= 2 5 n s » e jc tf/J V c S U l Main Use ►Switching Regulator ►Home Appliance, Office Automation
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S20LC60US
marking sb diode
S20LC60
marking JC diode
S20LC60US
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ME03
Abstract: No abstract text available
Text: ’ ON QNiMvag -!- I M 9 5 MA X 5» ± 0. 1 9 0 X Lfl O oo 1 ID m V HIIHMtil 1 t 3 B S I - ! -B 1 » i — • ■ ■ - r ■■ i Ä i t I 2 .5 4 -5» (PITCH) ±Q> n 7 8 . 7 4(2.54X31
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54X31
E0B-64S-D4T1
ME03
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Untitled
Abstract: No abstract text available
Text: PART M UST INSERT FULLY TO SU R FA C E A IN R ECO M M END ED GRID .025 S Q . 4 .1 1 0 /.1 4 0 [.64] [2 .7 9 /3 .5 6 ] -A - TAB LOCATES TERM. # 1 - 2 SID E _.472 MAX1 [11.99] .945 MAX. [24.00] TJ 6 7 1 -8 0 0 5 MIDCOM .906 MAX. [23.01] (§ ) JZL LOT CODE & DATE CODE
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4000Hz,
600Hz,
E99406
LR61218
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marking 9D
Abstract: D1NL40U AX057 ITT diode marking code 9d diode MARKING CODE 3J
Text: Super Fast Recovery Diode Axial Diode •fttg H Package D1NL40U OUTLINE AX057 * I 400V 0.9A 2 UJ Feature 2.6 </> • Low Noise • trr=25ns • trr=25ns *2 G> Main Use • Z'l • • • • • O A , 8? • jS fl.F A Unit • mm W eight 0. 19k T y p Switching Regulator
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D1NL40U
AX057
CJ533-1
marking 9D
ITT diode
marking code 9d
diode MARKING CODE 3J
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S30SC4MT
Abstract: DIODE UF marking code
Text: Schottky Barrier Diode Twin Diode OUTLINE S30SC4MT Unit : mm Package I MTO-3PT Weight 52g Typ 40V 30A Feature • T j= i5 ( r c • Tj=150°C • P r r s m P K t? • P rrsm Rating • 9 jCÖtyJvSU' • Small 8 jc • High lo Rating • 7 • • • •
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S30SC4MT
15ffC
CJ533-1
S30SC4MT
DIODE UF marking code
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