7T5TE37 Search Results

SD1438

Abstract: thomson microwave transistor
Contextual Info: S G S -TH O M SO N □ SC 0 I 7T5TE37 G O O Q lâM T | ° SOLID STATE MICROWAVE SD1438-2 THOMSON-CSF COMPONENTS CORPORATION Montgomeryviile, P A 18936 • 215 362-8500 ■ TWX 510-661-7299 100 W, 28 V VHF POWER TRANSISTOR DESCRIPTION ■230 SSM device type SD1438-2 is a 28 volt epitaxial silicon NPN planar

Contextual Info: , SCS-THOMSON r. S T V 2 10 0 ö ä im i iu ic t i m » PAL LUMA-CHROMA& DEFLECTION PROCESSOR PRELIMINAY DATA - FEW EXTERNAL COMPONENTS • RGB AND FAST BLANKING INPUTS ■ DC-CONTROLLED BRIGHTNESS, CON­ TRAST AND SATURATION ■ CERAMIC 500kHz VCO FOR LINE DEFLEC­

Contextual Info: I S^C D I 7 CÌ2<:1237 aQD5131 T S G S-THOMSON T 3. O 59C 02131 tH Ù M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS D ' Y - 6J- i l B Y T 12-200 — 400, R F A S T R E C O V E R Y R E C TIFIER REDRESSEUR R A PID E ADVANCE INFORMATION .

AN404

Abstract: ST24C04 ST24W04 ST25C04 ST25W04
Contextual Info: r z j SG S-TH O M SO N ^ 7 # , SfflQ@^ lllLi @TrMRia(gi ST24C04, ST25C04 ST24W04, ST25W04 SERIAL ACCESS 4K ( 512x8 EEPROM 1 MILLION ERASE/WRrTE CYCLES with 10 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: - 3V to 5.5V for ST24x04 versions - 2.5V to 5.5V for ST25x04 versions

CB-33

Contextual Info: I 7=12^237 QQD2351 2 S G S-THOMSON 59C 02351 O D 7^ o 17 ' R T 5 . 1 T H O M S O N -C S F F 1 - * , 8 D IV IS IO N S EM IC O N DUCTE UR S DISCRETS E S M 7 G ü ^ a H IG H E F F IC IE N C Y FA ST R E C O V E rtV R E C T IF IE R S SUPERSWITCH REDRESSEURS R A PIDES A H A U T R E N D E M E N T

Contextual Info: S G S-TH0f1S0N 07E D • 67C 7^237 ODlbBST □ 16488 IX IV : *>• •< T54LS390/393 T74LS3S0/393 A C C H A R A C T E R IS T IC S : TA = 2 5 °C , VCC = 5.0V L im its Param eter Sym b o l Min. Typ. Max. T e st C o n d itio n s U n its fMAX Maximum C lock Frequency

Contextual Info: 5=10 S G S-THOMSON O D 1I 7 ^ 2 3 7 0GQ21QS BY 318-100 — BY 318-600 T H O M S O N -C S " 59C DIVISION SEMICONDUCTEURS DISCRETS 02105J _ _ d T - 0 3 - là > FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDE FAST RECOVERY DIODES • S o ft re c o v e ry

aval

Contextual Info: S G S^C S —T H O M S O N O T H O M S O N -C S F B V D W DIVISION SEMICONDUCTEURS DISCRETS 7 C12C1 2 3 7 t 7 5 _ B . Y — G G G E E IG 2 _ _ _ _ W 7 1 5 A HIGH EFFICIENCY FAST RECOVERY RECTIFIERS SUPERSWITCH REDRESSEURS RAPIDES A H A U T RENDEMENT

ST10F160

Abstract: st10 Bootstrap st10f166
Contextual Info: rZ J SGS-THOMSON ST10F160 ST10F166 Rffll!g[S i[Li inS©K!ID@S 16-BIT MCU WITH 256K FLASH MEMORY • High Performance 16-bit CPU with 4-Stage Pipeline ■ 100 ns Instruction Cycle Time at 20 MHz CPU Clock ■ 500 ns Multiplication 16x 16 bit , 1 |xs Division

Q01t

Contextual Info: S G S-THOnSON D7E D | 7 ^ 2 3 7 if* 00lb3bû 1 | 1 LOW POWER SCHOTTKY I a INTEGRATED CIRCUITS 67C 15497 D T-66-21-51 QUAD 2-PORT REGISTER DESCRIPTION The T54LS/T74LS398/399 are Quad 2-Port Regi­ sters. They are the logical equivalent of a quad 2-input multiplexer followed by a 4-bit edgetriggered register. Selection between two 4-bit in­

BARAA

Contextual Info: SG8-THOMSON L M 1 0 1 A - iy L M 2 0 1 A L M 3 0 1 A SINGLE OPERATIONAL AMPLIFIERS LM101A LM301A LM201A INPUT OFFSET VOLTAGE 0.7mV 2mV INPUT BIAS CURRENT 25nA 70nA INPUT OFFSET CURRENT 1.5nA 2nA SLEW RATE AS INVERTING 10V4IS 10V4IS AMPLIFIER N DIP8 Plastic Package

BYT 45 J

Abstract: stc 8000 h
Contextual Info: 1 5^0 D I 7TETE37 0002101 3 S G S-THOMSON Q 59C 02181 T H O M S O N -C S F B 0 7 ^ 0 3 “/7 Y T 6 5 . 6 5 B DIVISION SEMICONDUCTEURS DISCRETS SUPERSW ITCH 6 _ ^ 1 , C R HIGH VOLTAGE FAST RECOVERY RECTIFIERS R E D R ESSEU R S RA PID ES H AU TE TENSION HIGH VOLTAGE

BIT1603

Abstract: M5450 M5451 M5451Q 1229H DIP40 IT26 M5450B7 M5451B7 PLCC44
Contextual Info: F = 7 M5450 M5451 S G S -T H O M S O N L E D D IS P L A Y D R IV E R S • M5450 34 OUTPUTS/15mA SINK ■ M5451 35 OUTPUTS/15mA SINK ■ CURRENT GENERATOR OUTPUTS NO EX­ TERNAL RESISTORS REQUIRED ■ CONTINUOUS BRIGHTNESS CONTROL ■ SERIAL DATA INPUT . ENABLE (ON M5450)

breakover device

Abstract: THBT200D THBT SGS-Thomson thbt
Contextual Info: 3GE D KB ? clEtì 237 ÜÜ35DS0 fi • Æ T SCS-TMOMSON ' T : ?Z-( s G S-THOMSON THBT 200 D TRISIL DESCRIPTIO N This protection device has been especially designed for subscriber line-card and terminal protection. By itself, it enables to protect integrated SLIC against

Contextual Info: r= 7 SGS-THOMSON * 7 # . « » ilL iO T Q I f f lS M28LV16 i LOW VOLTAGE PARALLEL ACCESS 16K 2K x 8 EEPROM WITH SOFTWARE DATA PROTECTION • FAST ACCESS TIME: 200ns ■ SINGLE LOW VOLTAGE OPERATION ■ LOW POWER CONSUMPTION ■ FAST WRITE CYCLE: - 64 Bytes Page Write Operation

Contextual Info: S G S -T H O M S O N ST5421 SID-GCI : S/T INTERFACE DEVICE WITH GCI PRELIMINARY DATA PLCC28 ORDERING NUMBERS: ST5421CP ST5421CFN PIN CONNECTIONS Top views LO * Z t W 20 3 LU 19 3 L I 18 3 L S 0 1? 3 6N 0 iE 3 MB 15 3 R S T 14 3 5 0 / B C L / B U S 13 3 5 2 / M l

jrc 317

Abstract: 317 jrc triac BT 317 ST6210B1 ST626x-EMU triac BT 317 DATASHEET PDIP20 PDIP28 PS020 TRIAC BTB 16
Contextual Info: SGS-THOMSON K flD e ïS Q iL ie r iis o iiâ D e i ST6210B-ST6215B ST6220B-ST6225B 8-BIT HCMOS MCUs WITH A/D CONVERTER PRELIMINARY DATA • 3.0 to 6.0V Supply O perating Range ■ 8 MHz Maximum Clock Frequency ■ -40 to +85°C O perating Temperature Range

151-237

Abstract: TD-501
Contextual Info: 57. SCS-THOMSON M62940A iy VERY FAST CMOS 32K x 9 CACHE BRAM ADVANCE DATA • 32Kx 9 CMOS SYNCHRONOUS BURST SRAM ■ FAST CYCLE TIMES: 15, 20ns ■ FAST ACCESS TIMES: 1 1 ,1 2 ,14ns Max ■ ON-BOARD BURST COUNTER ■ INPUT REGISTERS ADDR.,DATA,CTRL ■ SELF-TIMED WRITE CYCLE

77150

Abstract: diode BYW 31 200
Contextual Info: ~5TC D I ÎTETEB? QGGE22Û 3 | S G S— THOMSON BYW 77-50-200, R BYW 77-150 A, (R) O THOMSONaCSF DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH E F F IC IE N C Y F A S T R E C O V E R Y R E C T IF IE R S R E D R ESSEU R S RAPID ES A H AU T REND EM ENT

Contextual Info: S G 1 S-THOMSON 5=10 D I □ □0 2 HD2 TTETEB? 7 < Q 59C .DIVISION SEMICONPUCTEURS.DIBCBElù- 02102 ï - t f BY 299 BY 296 T H O M S O N " C S F - o 3 D FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDE s FAST RECOVERY DIODES *0 2A/Tamb * ÔO°C

Contextual Info: s G S-THOMSON O 5=10 D • 7 ^ 2 3 7 OGOElOfi 4 BY 396 — BY 399 T H O M S O N -C S F 5 9C 02108 D IV IS IO N S EM IC O N DUCTEUR S DISCRETS . _ D T “ 0 3 - 15 . FAST RECOVERY RECTIFIER DIODES D IO D E S D E R E D R E SS E M E N T R A P ID E /■ FAST RECOVERY DIODES

Contextual Info: s S^ c G S-TH O M SO N D | 7 ^ 2 3 7 GQG2177 T Q 1HO M SO N-CSF - c y - 1 / 7 BYT 6 1 . 6 1 B 6 0 0 - . 1 0 0 0 l R DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH h ig h v o l t a g e fa st r ec o ve r y r e c t ifie r s REDRESSEURS RAPIDES HAUTE TENSION 59C

Contextual Info: r z 7 SGS-THOMSON ^7# iMDsæiLiÊTri^sûaiies S06xxxH SCR FEATURES • It rms = 6A 200V to 800V ■ High surge current capability > V drm= DESCRIPTION The S06xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose

M 3872

Abstract: rcl 7040 spru ST62T60 PDIP20 PS020 ST6260B ST6263B ST62E60B ST62T60B
Contextual Info: E Z Z *7 M S G S -T H O M S O N , S T 6 2 T 6 0 B /E 6 0 B M g |g iiy i(g O M lliia O (g g _ S T 6 2 T 6 3 B 8-BIT MCUs WITH A/D CONVERTER, AUTO-RELOAD TIMER, EEPROM AND SPI • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■