7N6 SOT23 Search Results

7N6 SOT23 Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TBAW56		Toshiba Electronic Devices & Storage Corporation	Switching Diode, 80 V, 0.215 A, SOT23
DIYAMP-SOT23-EVM		Texas Instruments	Universal Do-It-Yourself (DIY) Amplifier Circuit Evaluation Module

7N6 SOT23 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Marking 7n6 Mosfet Abstract: marking 7n6 7n6 diode zxmn6a07f Contextual Info: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS Max RDS(on) 60V 250mΩ@ VGS= 10V 350mΩ @ VGS= 4.5V Max ID TA = 25°C (Note 7) 1.4A 1.2A Description This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for	Original	ZXMN6A07F AEC-Q101 DS33547 Marking 7n6 Mosfet marking 7n6 7n6 diode zxmn6a07f	PDF
Marking 7n6 Mosfet Abstract: 7n6 diode marking 7n6 ZXMN6A07F ZXMN6A07FQTA tr/transistor 7n6 Contextual Info: A Product Line of Diodes Incorporated ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS Max RDS(on) 60V 250mΩ @ VGS= 10V 350mΩ @ VGS= 4.5V Max ID TA = 25°C (Note 7) 1.4A 1.2A Description This MOSFET utilizes a unique structure that combines the benefits	Original	ZXMN6A07F AEC-Q101 DS33547 Marking 7n6 Mosfet 7n6 diode marking 7n6 ZXMN6A07F ZXMN6A07FQTA tr/transistor 7n6	PDF
ZXMN6A07F Abstract: ZXMN6A07FTA ZXMN6A07FTC 18a diode sot23 18a sot23 Marking 7n6 Mosfet Contextual Info: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=60V; RDS(ON)=0.4 D=1.05A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power	Original	ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC uni00 ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC 18a diode sot23 18a sot23 Marking 7n6 Mosfet	PDF
Contextual Info: ZXMN6A07F 60V SOT23 N-channel enhancement mode mosfet Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.250 @ VGS= 10V 1.4 0.350 @ VGS= 4.5V 1.2 Description D This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast	Original	ZXMN6A07F D-81541	PDF
marking 7n6 Abstract: 7n6 SOT23 TS16949 ZXMN6A07F ZXMN6A07FTA regulator 59 Contextual Info: ZXMN6A07F 60V SOT23 N-channel enhancement mode mosfet Summary RDS on (⍀) ID (A) 0.250 @ VGS= 10V 1.4 0.350 @ VGS= 4.5V 1.2 V(BR)DSS 60 Description D This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast	Original	ZXMN6A07F ZXMN6A07FTA D-81541 marking 7n6 7n6 SOT23 TS16949 ZXMN6A07F ZXMN6A07FTA regulator 59	PDF
ZXMN6A07F Abstract: ZXMN6A07FTA ZXMN6A07FTC Marking 7n6 Mosfet Contextual Info: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.4 ID=1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This	Original	ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC Marking 7n6 Mosfet	PDF
Contextual Info: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.4⍀ D=1.05A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power	Original	ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC	PDF
Marking 7n6 Mosfet Abstract: marking 7n6 18a diode sot23 7n6 diode ZXMN6A07F Contextual Info: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 60V; RDS(ON) = 0.300 ID = 1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This	Original	ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC 7N6-04 Marking 7n6 Mosfet marking 7n6 18a diode sot23 7n6 diode ZXMN6A07F	PDF
ZXMN6A07F Abstract: Marking 7n6 Mosfet Contextual Info: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 60V; RDS(ON) = 0.300 ID = 1.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This	Original	ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC ZXMN6A07F Marking 7n6 Mosfet	PDF