7M400 Search Results

Contextual Info: TQM 7M4004 Preliminary data sheet 3V Dual-Band E-GSM/DCS Power Amplifier Module Description: Package Outline: Advanced dual-band, compact 3V power amplifier module designed for mobile handset applications. The small size and high performance is achieved with high-reliability

C352

Abstract: GSM900 Load cell gsm 030818
Contextual Info: TQM 7M4009 Preliminary data sheet 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module Package Outline: Advanced quad-band, compact 3V power amplifier module designed for mobile handset applications. The small size and high performance is achieved with high-reliability InGaP HBT

Contextual Info: TQM 7M4009 Preliminary data sheet 3V Tri-Band GSM900/DCS/PCS Power Amplifier Module Package Outline: Advanced tri-band, compact 3V power amplifier module designed for mobile handset applications. The small size and high performance is achieved with high-reliability InGaP HBT

7M4009

Abstract: MAX 1785
Contextual Info: TQM 7M4009 Preliminary data sheet 3V Tri-Band GSM900/DCS/PCS Power Amplifier Module Package Outline: Advanced tri-band, compact 3V power amplifier module designed for mobile handset applications. The small size and high performance is achieved with high-reliability InGaP HBT

APC interface dcs

Contextual Info: TQM 7M4008 Preliminary data sheet 3V Dual-Band E-GSM/DCS Power Amplifier Module Description: Package Outline: Advanced dual-band, compact 3V power amplifier module designed for mobile handset applications. The small size and high performance is achieved with high-reliability

IDT7M144S90

Abstract: 7MPV6283 IDT8M624 8M624 7M135 7MPV6274 8M824 7MPV6189 7M4048 8M612
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 Phone #: 408 727-6116 Fax #: (408) 727-2328 PRODUCT DISCONTINUANCE NOTICE (PDN) PDN #: _S-001_ Last Buy Date: _May 1, 2001_ Issue Date: _May 1, 2000_

ic 4013 pin configuration diagram

Abstract: cmos 4003 pin diagram of ic 4013 pin diagram of IC 4013 n
Contextual Info: 32K x 32 128K x 32 CMOS STATIC RAM MODULES 7M4003 IDT7M4013 Integrated Device Technology, Inc. FEATURES DESCRIPTION • • The 7M4003/4013 are high-speed, high-density 1Mb/ 4Mb CMOS Static RAM modules constructed on a multilayer cofired ceramic substrate using either 32K x 8 or 128K x 8

gsm module

Abstract: VBAT-50
Contextual Info: 7M4006 DATASHEET 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module Features Functional Block Diagram DCS / PCS in DCS / PCS Out Band Select Logic • • • TX_EN VCC VBATT Power Control VRAMP GSM 850 / 900 IN GSM 850 / 900 Out Product Description

Contextual Info: 7M4006 DATASHEET 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module Features Functional Block Diagram DCS / PCS in DCS / PCS Out Band Select Logic • • • TX_EN VCC VBATT Power Control VRAMP GSM 850 / 900 IN GSM 850 / 900 Out Product Description

7M4006

Abstract: GSM900 TQM7M4006 cmos 4016 TBD0402 1805-1880MHz power module
Contextual Info: 7M4006 DATASHEET 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module Features Functional Block Diagram DCS / PCS in DCS / PCS Out Band Select Logic • • • TX_EN VCC VBATT VRAMP Power Control GSM 850 / 900 IN GSM 850 / 900 Out Product Description

3 port coaxial circulators

Contextual Info: 4-Port Coaxial Circulators Features • ■ ■ ■ ■ High Isolation 396 MHz to 12.0 GHz 0° to +60°C Temperature Range 50 W att Average Power Female Connectors Standard - SMA, N or TN C m PORT 1 PORT 4 i. PORT 2 PORT 1 W ö PORT 3 - L-►-

Contextual Info: Integrated Device T echnology, Inc. SUBSYSTEMS FLEXI-PAK FAMILY 32K x 32 128K x 32 CMOS STATIC RAM MODULES 7M4003 IDT7M4013 FEATURES: DESCRIPTION: • The IDT7M 4003/4013 are high-speed, high-density 1 megabit/4 megabit CMOS static RAM modules constructed

a1601

Contextual Info: INTEGRATED DEVICE IDT M Ô 2 S 7 7 1 O O l M M S b 104 bflE D 32K x 32 128K x 32 CMOS STATIC RAM MODULES 7M4003 IDT7M4013 In te g ra te d D evice Technology, Inc. FEATURES DESCRIPTION • • The 7M4003/4013 are high-speed, high-density 1Mb/ 4Mb CMOS Static RAM modules constructed on a multilayer

ic 4013 data

Contextual Info: Integrated Device Technology, Inc. SUBSYSTEMS "FLEXI-PAK" FAMILY 32K X 32 128K x 32 CMOS STATIC RAM MODULE PRELIMINARY 7M4003 IDT7M4013 FEATURES: DESCRIPTION: • T h e ID T 7 M 4 0 0 3 /4 0 1 3 are high-speed, high-density I m egabit/4 megabit C M O S static RAM modules constructed

philips diode PH 33J

Abstract: UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
Contextual Info: QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCHES QS3L384 QS3L2384 FEATURES/BENEFITS DESCRIPTION • • • • • • • • • The QS3L384 and QS3L2384 provide a set of ten high-speed CMOS TTL-compatible bus switches. The low ON resistance of the QS3L384 allows inputs to be connected to outputs without

ic 4013 pin configuration diagram

Contextual Info: INTEGRATED DEVICE Integrated Device Technology, Inc. m M7E D MÔ2S771 0010061 S * I D T SUBSYSTEMS FLEXI-PAK FAMILY 32K x 32 128KX32 CMOS STATIC RAM MODULES 7M4003 IDT7M4Q13 - T - M t - 2 3 - m FEATURES: DESCRIPTION: • T h e ID T 7 M 4 0 0 3 /4 0 1 3 a re hig h -sp e ed , high-density

CI 4013

Abstract: CI 4013 BE 4013 pin configuration CMOS 4013 IDT7M4003
Contextual Info: Integrated Device Technology, Inc. SUBSYSTEMS FLEXI-PAK FAMILY 32K x 32 128K x 32 CMOS STATIC RAM MODULES 7M4003 IDT7M4013 FEATURES: DESCRIPTION: • T h e ID T 7 M 4 0 0 3 /4 0 1 3 a re h ig h -s p e e d , h ig h -d e n s ity 1 m e gabit/4 m e gabit C M O S static FIAM m odules constructed

UM61256FK-15

Abstract: YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624
Contextual Info: QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH QUAD 2:1 MUX/DEMUX QS3257 QS32257 FEATURES/BENEFITS DESCRIPTION • • • • • • • • The QS3257 is a high-speed CMOS LVTTL-compatible Quad 2:1 multiplexer/demultiplexer. The QS3257 is a function and pinout compatible QuickSwitch