7A 50V P-CHANNEL MOSFET Search Results

Contextual Info: 32E D • 023b32Q OGIVIOÌ b « S I P SIPMOS N Channel MOSFET BSP 295 SIEMENS/ SPCL-. SEMICONDS T -g ì-O S ' _ Preliminary Data • SIPMOS - enhancement mode • Drain-source voltage Vis = 50V • Continuous drain current I d = 1-7A • Drain-source on-resistance

FS14SM16A

Abstract: FS14SM-16A
Contextual Info: MITSUBISHI Neh POWER MOSFET FS14SM-16A HIGH-SPEED SWITCHING USE FS14SM-16A OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 <t>3.2 uX kr • r 4.4 1.0 5.45 5.45 0.6 ] bd^ Q w q w e r V d s s . 8 0 0 V

Contextual Info: MITSUBISHI Neh POWER MOSFET FS14SM-16A HIGH-SPEED SWITCHING USE FS14SM-16A •800V : »VDSS . • ro s ON (MAX) ■0.70Q • I d . . 1 4 A APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per­

Contextual Info: MITSUBISHI Neh POWER MOSFET FS14VS-9 HIGH-SPEED SWITCHING USE FS14VS-9 • VDSS . •450V • rDS ON (MAX) ■0.52Q • I D . ■■■ 14A APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per­

mosfet 500v 10A

Abstract: FL14KM-10A
Contextual Info: MITSUBISHI POWER MOSFET RY FL14KM-10A INA ELIM on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som PR HIGH-SPEED SWITCHING USE Nch POWER MOSFET FL14KM-10A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3

Contextual Info: MITSUBISHI Neh POWER MOSFET FK14UM-9 HIGH-SPEED SWITCHING USE APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS Tc = 25°C Ratings Unit V dss Symbol Drain-source voltage Parameter Vgs = OV 450 V V gss Gate-source voltage

1 R 10E 3C, diode

Contextual Info: MITSUBISHI Neh POWER MOSFET FK14SM-9 HIGH-SPEED SWITCHING USE FK14SM-9 OUTLINE DRAWING Dim ensions in mm 4.5 15 • V dss . 450V • rDS ON (MAX) . 0 .6 5 Q

TTC 103

Contextual Info: MITSUBISHI Neh POWER MOSFET FS14SM-9 HIGH-SPEED SWITCHING USE FS14SM-9 • Voss . 450V • rDS ON (MAX) .0.52Í2 • ID . 14A

IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Contextual Info: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω

Contextual Info: MITSUBISHI Neh POWER MOSFET F S 1 4 S M - 1 8 A HIGH-SPEED SWITCHING USE FS14SM-18A OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. | 3.2 * 4.4 1.0 5.45 5.45 0.6 4 Q w r q V d s s . 900V

mosfet 441

Contextual Info: MITSUBISHI Neh POWER MOSFET FK14UM-10 HIGH-SPEED SWITCHING USE FK14UM-10 • VDSS . 500V • rDS ON (MAX) .0.80Q •ID . 14A

Contextual Info: MITSUBISHI Neh POWER MOSFET FS14SM-14A HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm .4.5 1 5.9 M A X . 1.5 T fW in ]¡ <t> 3.2 5.45 5.4 5 0.6 2.8 O 'i • V dss . 700V • rDS ON) (MAX)

L1037

Abstract: L-1037
Contextual Info: MITSUBISHI Neh POWER MOSFET FK14UM-9 HIGH-SPEED SWITCHING USE FK14UM-9 OUTLINE DRAWING Dimensions in mm 10.5MAX. , 4.5 % . 3.6 0.8 2.54 2.54 0.5 I . 2.6 -r X _ —I \ • V dss . 450V • rDS ON (MAX)

Contextual Info: IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3 5.72 (.225) 0.76 (0.030) min. 1 2 VDSS ID(cont) RDS(on) 10.16 (0.400)

IRF9130SMD05

Abstract: IRFNJ9130 SMD05
Contextual Info: IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3 5.72 (.225) 0.76 (0.030) min. 1 2 VDSS ID(cont) RDS(on) 10.16 (0.400)

Contextual Info: MITSUBISHI Neh POWER MOSFET F S 1 4 S M -1 4 A HIGH-SPEED SWITCHING USE FS14SM-14A OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 <t>3.2 uX • r 4.4 1.0 5.45 5.45 0.6 f= d J bd^ Q w r V d s s . 700V

Contextual Info: MITSUBISHI Neh POWER MOSFET FK14VS-9 HIGH-SPEED SWITCHING USE FK14VS-9 • V d s s . 450V • rDS ON (MAX) .0 .6 5 Q • I D .14A

FL7KM-12A

Contextual Info: MITSUBISHI Nch POWER MOSFET ARY FL7KM-12A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FL7KM-12A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2

KF7N50

Abstract: KF7N50D KF7N50I
Contextual Info: SEMICONDUCTOR KF7N50D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF7N50D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

2100-CC

Contextual Info: MITSUBISHI Neh POWER MOSFET FK7SM-12 HIGH-SPEED SWITCHING USE FK7SM-12 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1-5 <p 3.2 * 5.45 , 5.45 0.6 . 2.8 O .2 4 • TDS ON (MAX) •600V 1.63Q • I D . . • Integrated Fast Recovery Diode (MAX.) —

KF7N80

Contextual Info: SEMICONDUCTOR KF7N80P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF7N80P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

KF7N80

Abstract: KF7N80F KF7N80P kf7n
Contextual Info: SEMICONDUCTOR KF7N80P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF7N80P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

KF7N60

Abstract: kf7n60f KF7N60P
Contextual Info: SEMICONDUCTOR KF7N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF7N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

KF7N60

Abstract: kf7n60f KF7N60P KF7N6 KF7N60P/F
Contextual Info: SEMICONDUCTOR KF7N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF7N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor